DE19851703A1 - Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate - Google Patents

Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate

Info

Publication number
DE19851703A1
DE19851703A1 DE1998151703 DE19851703A DE19851703A1 DE 19851703 A1 DE19851703 A1 DE 19851703A1 DE 1998151703 DE1998151703 DE 1998151703 DE 19851703 A DE19851703 A DE 19851703A DE 19851703 A1 DE19851703 A1 DE 19851703A1
Authority
DE
Grant status
Application
Patent type
Prior art keywords
applied
substrate
insulating
plotting
spraying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE1998151703
Other languages
German (de)
Inventor
Abbas Ourmazd
Gudrun Kissinger
Wolfgang Neumann
Burkhard Neumann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH
Original Assignee
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002Deposition of organic semiconductor materials on a substrate
    • H01L51/0003Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating
    • H01L51/0004Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing, screen printing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0541Lateral single gate single channel transistors with non inverted structure, i.e. the organic semiconductor layer is formed before the gate electode

Abstract

Electronic structure production involves plotting, spraying, spin coating or spreading of insulating, semiconducting and/or conductive layers onto a substrate. An electronic structure production process comprises: (a) applying successive insulating, semiconducting and/or conductive layers corresponding to the structure to be produced by plotting, spraying, spin coating or spreading onto a substrate and hardening each applied layer by heat treating or drying; and (b) subjecting the resulting structure to sealing with an insulation layer, contacting and finishing. Preferred Features: At least one of the layers is applied by a plotter. The substrate may be rigid or flexible, especially a wafer, glass or foil substrate. The layers are applied using substances, especially polymers, in liquid, dissolved or suspended form.

Description

Die Erfindung bezieht sich auf ein Verfahren zur Herstellung von elektronischen Strukturen. The invention relates to a process for the production of electronic structures.

Gegenüber herkömmlichen Verfahren zur Herstellung von elektronischen Strukturen, insbesondere integrierten Schaltungen, z. Compared to conventional methods for the production of electronic structures, in particular integrated circuits, z. B. mittels Epitaxie-, Ätz- und Temperprozessen basierend auf Silizium-Wafern, ist die Anwendung der Drucktechnologie von Polymermaterialien erheblich schneller und kostengünstiger. Example by means of epitaxy, etching and heat treatment processes based on silicon wafers, the use of the printing technology of polymer materials is significantly faster and cheaper. Des weiteren ist diese Technologie vielseitiger einsetzbar, da die verwendeten Materialien nicht solch extremen Temperaturen und Drücken ausgesetzt ist wie beispielsweise bei Epitaxie- und Oxidationsverfahren. Furthermore, this technology is more versatile, since the materials used is not exposed to such extreme temperatures and pressures such as in epitaxial and oxidation process.

Bisher wurden Polymere zur Herstellung von Schaltkreisstrukturen mittels Siebdruck auf Waferoberflächen gebracht. So far, polymers for the production of circuit structures were placed on wafer surfaces by screen printing. Dies hatte jedoch den Nachteil, daß die erzielten Schichtdicken für die Herstellung beispielsweise von Transistoren zu groß waren, um gute elektrische Eigenschaften zu erhalten. However, this had the disadvantage that the layer thicknesses achieved were too big for the production example of transistors to obtain good electrical properties.

Weiterhin besteht die Möglichkeit, mit Hilfe von Tinten- oder Laserstrahldruckern Polymere auf Waferoberflächen aufzudrucken. It is also possible to print by using ink or laser beam printers polymers on wafer surfaces. Bisher ist es jedoch nicht möglich, strukturierte Schichten in mehreren übereinanderliegenden Ebenen aufzubringen. So far, however, it is not possible to apply structured layers in several superimposed layers. Dies scheitert an der fehlenden Justagemöglichkeit. This fails because of the lack of adjustment facility. Da mehrere Schichten nur aufgebracht werden können, wenn eine genügend große Trocknungszeit der einzelnen Schichten eingehalten wird, ist dies mit Tintenstrahl- oder Laserdruckern nicht möglich. Because multiple layers can be applied only when a sufficient drying time of each layer is adhered to, this is not possible with inkjet or laser printers. Ist die Trocknungszeit zu gering, kommt es zur Vermischung der Schichten, was eine Unbrauchbarkeit der Struktur zur Folge hätte. The drying time is too low, it comes to mixing of the layers, which would result in uselessness of the structure result.

Aufgabe der Erfindung ist es, ein Verfahren zur Herstellung von Schaltkreisstrukturen vorzuschlagen, bei dem die Nachteile des Standes der Technik beseitigt werden und insbesondere Polymere in Form von leitenden, halbleitenden und isolierenden Schichten strukturiert aufgebracht werden, wobei eine Justage der Ebenen möglich ist. The object of the invention is to propose a method for the production of circuit structures, in which the disadvantages of the prior art are overcome and, in particular polymers in the form of conducting, are applied semi-conductive and insulating layers structured, wherein an adjustment of levels is possible. Des weiteren ist es Aufgabe der Erfindung, daß das Verfahren derart gestaltet ist, daß Bauelemente und deren Verbindungen auf flexiblen Substraten aufgebracht werden können. Furthermore, it is an object of the invention is that the process is designed so that components and their compounds can be applied on flexible substrates. Ein komplettes Aufbringen von Schaltkreislayouts in einer oder mehreren Ebenen soll durch erfindungsgemäßes Verfahren möglich sein. A complete application of circuit layouts in one or more planes to be possible by the invention method. Weiterhin ist es Aufgabe der Erfindung, daß Schaltkreise und andere elektronische Bauelemente auch aus anderen Materialien als Silicium hergestellt werden können. Furthermore, it is an object of the invention is that circuits and other electronic components made of other materials can be prepared as silicon.

Erfindungsgemäß wird diese Aufgabe gelöst, indem eine isolierende und/oder halbleitende und/oder leitfähige Schicht entsprechend der zu erzielenden elektronischen Struktur mittels Plotter auf ein Substrat aufgebracht wird. According to the invention this object is achieved by an insulating and / or semiconductive and / or conductive layer is applied to a substrate according to the electronic structure to be achieved by means of plotter. Als Substrate eignen sich sowohl feste als auch flexible Wafer, Glas, Folie oder ähnliche. Suitable substrates are both solid and flexible wafer, glass, film or the like are suitable. Form, Größe und Dicke des Substrats spielen dabei eine untergeordnete Rolle. Shape, size and thickness of the substrate play a subordinate role. Die aufgebrachten Substanzen liegen dabei in flüssiger oder gelöster Form oder als Suspension vor. The applied substances here in liquid or dissolved form or as a suspension. Insbesondere werden isolierende und/oder halbleitende und/oder leitfähige Polymere aufgebracht. In particular, insulating and / or semiconductive and / or conductive polymers are applied.

Anschließend werden die aufgebrachten Substanzen durch Tempern oder Trocknen verfestigt. Subsequently, the deposited substances are solidified by heat treatment or drying. Nachfolgend werden, wahlweise mehrfach wiederholt, isolierende und/oder halbleitende und/oder leitfähige Schichten entsprechend der zu erzielenden elektronischen Struktur durch Plotten, Aufsprühen, Aufschleudern oder Aufstreichen aufgebracht und die jeweils aufgebrachte Schicht durch Tempern oder Trocknen verfestigt. Subsequently, optionally repeated several times, insulating and / or semiconductive and / or conductive layers corresponding to the electronic structure to be obtained by plotting, spraying, spin coating or painting is applied and the respective applied layer is solidified by heating or drying.

Abschließend wird die aufgebrachte elektronische Struktur mit einer isolierenden Schicht versiegelt und in üblicher Weise kontaktiert und komplettiert. Finally, the applied electronic structure is sealed with an insulating layer and contacted in the conventional manner and completed.

Durch dieses Verfahren werden sowohl elektronische Bauelemente als auch die Verbindungen einzelner Bauelemente in integrierten Schaltungen hergestellt. By this method, both electronic components and the connections of individual devices are fabricated in integrated circuits.

Die Merkmale der Erfindung gehen außer aus den Ansprüchen auch aus der Beschreibung und den Zeichnungen hervor. The features of the invention will be apparent from the claims and from the description and the drawings. Ausführungsbeispiele der Erfindung werden im folgenden näher erläutert. Embodiments of the invention are explained in detail below.

Die Zeichnungen zeigen: In the drawings:

Fig. 1 bis 3 schematische Darstellungen schaltungsfähiger Feldeffekttransistoren Figs. 1 to 3 are schematic representations circuit capable field effect transistors

Beispiel 1 example 1

In diesem Ausführungsbeispiel wird die Herstellung eines schaltungsfähigen Feldeffekttransistors beschrieben. In this embodiment, the manufacture of a circuit-capable field effect transistor will be described.

Fig. 1 zeigt den schematischen Aufbau eines derartigen Transistors. Fig. 1 shows the schematic structure of such a transistor. Zuerst wird ein leitfähiges Polymer durch Plotten auf eine Waferoberfläche 1 aufgetragen und mittels Temperung verfestigt. First, a conductive polymer is applied by plotting on a wafer surface 1 and solidified by annealing. Diese leitende Schicht stellt den Gate-Kontakt 2 des Feldeffekttransistors dar. Anschließend erfolgt das Plotten einer isolierenden Schicht 3 auf das verfestigte leitfähige Polymer. This conductive layer constitutes the gate contact 2 of the field effect transistor. Subsequently, the plotting an insulating layer 3 made on the solidified conductive polymer. Auch die isolierende Schicht 3 wird mittels Temperung verfestigt. Also, the insulating layer 3 is bonded by means of annealing. Danach erfolgt das Plotten einer halbleitenden Schicht 4 auf die verfestigte isolierende Schicht und anschließendes Verfestigen der halbleitenden Schicht mittels Temperprozeß. Thereafter, the plotting of a semi-conductive layer 4 on the solidified insulating layer and then solidifying the semiconductive layer by annealing is performed. Nachfolgend wird eine Schicht eines leitfähigen Polymers durch Plotten aufgebracht und durch einen weiteren Temperprozeß verfestigt. Subsequently, a layer of a conductive polymer is applied by plotting and solidified by a further annealing. Diese Schicht beinhaltet den Source-Kontakt 5 und den Drain-Kontakt 6 . This layer includes the source contact 5 and the drain contact. 6

Zuletzt wird die Struktur mit einer in der Figur nicht dargestellten isolierenden Schicht versiegelt und das Bauelement in üblicher Form kontaktiert. Finally the structure is sealed by a not shown in the figure, the insulating layer and contacting the component in conventional form.

Beispiel 2 example 2

In diesem Ausführungsbeispiel wird ebenfalls die Herstellung eines schaltungsfähigen Feldeffekttransistors beschrieben. In this embodiment, the manufacture of a circuit-capable field effect transistor is also described.

Wie in Fig. 2 dargestellt, wird zuerst ein leitfähiges Polymer durch Plotten auf eine Waferoberfläche 1 aufgetragen und mittels Temperung verfestigt. As shown in Fig. 2, a conductive polymer is first applied by plotting on a wafer surface 1 and solidified by annealing. Diese leitende Schicht stellt den Gate-Kontakt 2 des Feldeffekttransistors dar. Anschließend erfolgt das Plotten einer isolierenden Schicht 3 auf das verfestigte leitfähige Polymer. This conductive layer constitutes the gate contact 2 of the field effect transistor. Subsequently, the plotting an insulating layer 3 made on the solidified conductive polymer. Auch die isolierende Schicht 3 wird mittels Temperung verfestigt. Also, the insulating layer 3 is bonded by means of annealing. Nachfolgend wird eine Schicht eines leitfähigen Polymers durch Plotten aufgebracht und durch einen weiteren Temperprozeß verfestigt. Subsequently, a layer of a conductive polymer is applied by plotting and solidified by a further annealing. Diese Schicht beinhaltet den Source-Kontakt 5 und den Drain-Kontakt 6 . This layer includes the source contact 5 and the drain contact. 6

Danach erfolgt das Plotten einer halbleitenden Schicht 4 auf die verfestigte isolierende Schicht 3 und auf die den Source-Kontakt 5 und den Drain-Kontakt 6 beinhaltende Schicht eines leitfähigen Polymers und anschließendes Verfestigen der halbleitenden Schicht 4 mittels Temperprozeß. Thereafter, the plotting of a semi-conductive layer 4 on the solidified insulating layer 3 and on the source contact and the drain contact 5 6 inclusive layer of a conductive polymer, and then solidifying the semiconductive layer 4 by annealing is performed.

Zuletzt wird die Struktur mit einer in der Figur nicht dargestellten isolierenden Schicht versiegelt und das Bauelement in üblicher Weise komplettiert. Finally the structure is sealed by a not shown in the figure, the insulating layer and completes the device in a conventional manner.

Beispiel 3 example 3

Fig. 3 zeigt schematisch den Aufbau eines weiteren schaltungsfähigen Feldeffekttransistors. Fig. 3 shows schematically the structure of another circuit capable field effect transistor. Zuerst wird ein leitfähiges Polymer durch Plotten auf eine Waferoberfläche 1 aufgetragen und mittels Temperung verfestigt. First, a conductive polymer is applied by plotting on a wafer surface 1 and solidified by annealing. Diese Schicht beinhaltet den Source-Kontakt 5 und den Drain- Kontakt 6 . This layer includes the source contact and the drain contact 5. 6 Danach erfolgt das Plotten einer halbleitenden Schicht 4 auf die verfestigte leitfähige Polymer-Schicht und auf die Waferoberfläche 1 und anschließendes Verfestigen der halbleitenden Schicht 4 mittels Temperprozeß. Thereafter, the plotting of a semi-conductive layer 4 on the solidified conductive polymer layer, and onto the wafer surface 1 and then solidifying the semiconductive layer 4 by annealing is performed.

Danach erfolgt das Plotten einer isolierenden Schicht 3 . Thereafter, the plotting an insulating layer 3 occurs. Auch die isolierende Schicht 3 wird mittels Temperung verfestigt. Also, the insulating layer 3 is bonded by means of annealing.

Nachfolgend wird eine Schicht eines leitfähigen Polymers durch Plotten aufgebracht und durch einen weiteren Temperprozeß verfestigt. Subsequently, a layer of a conductive polymer is applied by plotting and solidified by a further annealing. Diese leitende Schicht stellt den Gate- Kontakt 2 des Feldeffekttransistors dar. This conductive layer provides the gate is contact 2 of the field effect transistor.

Zuletzt wird die Struktur mit einer isolierenden Schicht versiegelt und das Bauelement in üblicher Weise kontaktiert und komplettiert. Finally the structure is sealed with an insulating layer and contacting the component in the usual way and completed.

In der vorliegenden Erfindung wurde anhand konkreter Ausführungsbeispiele ein Verfahren zur Herstellung von elektronischen Strukturen erläutert. In the present invention, a method for the production of electronic structures has been explained based on specific embodiments. Es sei aber vermerkt, daß die vorliegende Erfindung nicht auf die Einzelheiten der Beschreibung in den Ausführungsbeispielen eingeschränkt ist, da im Rahmen der Patentansprüche Änderungen und Abwandlungen beansprucht werden. However, it should be noted that the present invention is not limited to the details described in the embodiments, as claimed in the scope of the claims modifications and variations.

Claims (6)

  1. 1. Verfahren zur Herstellung von elektronischen Strukturen, dadurch gekennzeichnet , daß 1. A process for the production of electronic structures, characterized in that
    • 1. isolierende und/oder halbleitende und/oder leitfähige Schichten nacheinander wahlweise ein- oder mehrfach entsprechend der zu erzielenden elektronischen Struktur durch Plotten, Aufsprühen, Aufschleudern oder Aufstreichen auf ein Substrat aufgebracht und die jeweils aufgebrachte Schicht durch Tempern oder Trocknen verfestigt wird und successively optionally mono- 1. insulating and / or semiconductive and / or conductive layers or multiply applied to a substrate in accordance with the to be achieved electronic structure by plotting, spraying, spin-coating or painting on and, each coated layer is solidified by heating or drying and
    • 2. abschließend die aufgebrachte elektronische Struktur mit einer isolierenden Schicht, versiegelt sowie kontaktiert und komplettiert wird. is 2. Finally, the applied electronic structure with an insulating layer, and contacted sealed and completed.
  2. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß mindestens eine Schicht mittels Plotter aufgebracht wird. 2. The method according to claim 1, characterized in that at least one layer is applied by plotter.
  3. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß als Substrat sowohl feste, als auch flexible Substrate, insbesondere Wafer, Glas oder Folie, Verwendung finden. 3. The method of claim 1 or 2, characterized in that as substrate both solid as well as flexible substrates, in particular wafers, glass or sheet find use.
  4. 4. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß als Schichten aufgebrachte Substanzen in flüssiger oder gelöster Form oder als Suspension aufgetragen werden. 4. The method according to one or more of the preceding claims, characterized in that are applied as layers applied substances in liquid or dissolved form or as a suspension.
  5. 5. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß als Schichten isolierende und/oder halbleitende und/oder leitfähige Polymere aufgetragen werden. 5. The method according to one or more of the preceding claims, characterized in that layers are applied as insulating and / or semiconductive and / or conductive polymers.
  6. 6. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß elektronische Bauelemente und/oder Verbindungen einzelner Bauelemente in integrierten Schaltungen hergestellt werden. 6. The method according to one or more of the preceding claims, characterized in that electronic components and / or connections of individual devices are fabricated in integrated circuits.
DE1998151703 1998-10-30 1998-10-30 Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate Withdrawn DE19851703A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1998151703 DE19851703A1 (en) 1998-10-30 1998-10-30 Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1998151703 DE19851703A1 (en) 1998-10-30 1998-10-30 Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate

Publications (1)

Publication Number Publication Date
DE19851703A1 true true DE19851703A1 (en) 2000-05-04

Family

ID=7887242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998151703 Withdrawn DE19851703A1 (en) 1998-10-30 1998-10-30 Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate

Country Status (1)

Country Link
DE (1) DE19851703A1 (en)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002005360A1 (en) * 2000-07-07 2002-01-17 Siemens Aktiengesellschaft Method for the production and configuration of organic field-effect transistors (ofet)
DE10038895A1 (en) * 2000-08-09 2002-02-28 Advanced Photonics Tech Ag Semi conducting and or electro luminescent device using a sheet construction of an organic type
WO2002019443A1 (en) * 2000-09-01 2002-03-07 Siemens Aktiengesellschaft Organic field effect transistor, method for structuring an ofet and integrated circuit
WO2002047183A1 (en) * 2000-12-08 2002-06-13 Siemens Aktiengesellschaft Organic field-effect transistor, method for structuring an ofet and integrated circuit
DE10105914C1 (en) * 2001-02-09 2002-10-10 Siemens Ag An organic field effect transistor having photostructured gate dielectric and a process for its production
DE10255870A1 (en) * 2002-11-29 2004-06-17 Infineon Technologies Ag A process for preparation of layers from a layer material on organic semiconductor layers useful in the production of organic field effect transistors with top-contact architecture from conductive polymers
US6803309B2 (en) 2002-07-03 2004-10-12 Taiwan Semiconductor Manufacturing Co., Ltd Method for depositing an adhesion/barrier layer to improve adhesion and contact resistance
EP1472744A1 (en) * 2002-01-25 2004-11-03 MOTOROLA INC., A Corporation of the state of Delaware Organic semiconductor device and method
US6903958B2 (en) 2000-09-13 2005-06-07 Siemens Aktiengesellschaft Method of writing to an organic memory
US7064345B2 (en) 2001-12-11 2006-06-20 Siemens Aktiengesellschaft Organic field effect transistor with off-set threshold voltage and the use thereof
EP1701387A2 (en) * 2005-03-09 2006-09-13 Samsung Electronics Co., Ltd. Organic thin film transistor array panel and manufacturing method thereof
US7298023B2 (en) 2001-10-16 2007-11-20 Polyic Gmbh & Co. Kg Electronic device with organic insulator
EP2006915A2 (en) * 2006-03-29 2008-12-24 Pioneer Corporation Organic thin film transistor device and method for manufacturing same
DE102007043920A1 (en) 2007-07-17 2009-01-22 Merck Patent Gmbh A functional material for printed electronic components
US7678857B2 (en) 2003-09-03 2010-03-16 Polyic Gmbh & Co. Kg Polymer mixtures for printed polymer electronic circuits
US7709865B2 (en) 2002-06-13 2010-05-04 Polyic Gmbh & Co. Kg Substrate for an organic field effect transistor, use of said substrate, method of increasing the charge carrier mobility, and organic field effect transistor (OFET)
US7724550B2 (en) 2004-12-23 2010-05-25 Polyic Gmbh & Co. Kg Organic rectifier
DE102009004491A1 (en) 2009-01-09 2010-07-15 Merck Patent Gmbh A functional material for printed electronic components
US7786818B2 (en) 2004-12-10 2010-08-31 Polyic Gmbh & Co. Kg Electronic component comprising a modulator
US7812343B2 (en) 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US7843342B2 (en) 2005-03-01 2010-11-30 Polyic Gmbh & Co. Kg Organic clock generator
US7847695B2 (en) 2004-08-23 2010-12-07 Polyic Gmbh & Co. Kg External package capable of being radio-tagged
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US7940159B2 (en) 2004-12-10 2011-05-10 Polyic Gmbh & Co. Kg Identification system
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US8044517B2 (en) 2002-07-29 2011-10-25 Polyic Gmbh & Co. Kg Electronic component comprising predominantly organic functional materials and a method for the production thereof
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0252756A2 (en) * 1986-07-10 1988-01-13 Canon Kabushiki Kaisha Semiconductor device comprising an organic material
US5151386A (en) * 1990-08-01 1992-09-29 Mobil Solar Energy Corporation Method of applying metallized contacts to a solar cell
US5206525A (en) * 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
US5500537A (en) * 1989-08-17 1996-03-19 Mitsubishi Denki Kabushiki Kaisha Field-effect transistor with at least two different semiconductive organic channel compounds
DE19628119A1 (en) * 1996-07-12 1998-01-29 Univ Bayreuth Vertreten Durch Light-emitting apparatus
US5747182A (en) * 1992-07-27 1998-05-05 Cambridge Display Technology Limited Manufacture of electroluminescent devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0252756A2 (en) * 1986-07-10 1988-01-13 Canon Kabushiki Kaisha Semiconductor device comprising an organic material
US5500537A (en) * 1989-08-17 1996-03-19 Mitsubishi Denki Kabushiki Kaisha Field-effect transistor with at least two different semiconductive organic channel compounds
US5206525A (en) * 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
US5151386A (en) * 1990-08-01 1992-09-29 Mobil Solar Energy Corporation Method of applying metallized contacts to a solar cell
US5747182A (en) * 1992-07-27 1998-05-05 Cambridge Display Technology Limited Manufacture of electroluminescent devices
DE19628119A1 (en) * 1996-07-12 1998-01-29 Univ Bayreuth Vertreten Durch Light-emitting apparatus

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP 58-27375 A.,In: Patents Abstracts of Japan, E-174,May 11,1983,Vol.7,No.107 *
Laser Deposition Of Metal Films With Organo- Metal INK. In: IBM Technical Disclosure Bulletin, Vol.31, No.7, Dec. 1988, S.45,46 *

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10033112C2 (en) * 2000-07-07 2002-11-14 Siemens Ag A process for the production and structuring of organic field effect transistors (OFET), hereinafter OFET fabricated and its use
DE10033112A1 (en) * 2000-07-07 2002-01-24 Siemens Ag A process for the production and structuring of organic field effect transistors (OFET)
US6852583B2 (en) 2000-07-07 2005-02-08 Siemens Aktiengesellschaft Method for the production and configuration of organic field-effect transistors (OFET)
WO2002005360A1 (en) * 2000-07-07 2002-01-17 Siemens Aktiengesellschaft Method for the production and configuration of organic field-effect transistors (ofet)
DE10038895A1 (en) * 2000-08-09 2002-02-28 Advanced Photonics Tech Ag Semi conducting and or electro luminescent device using a sheet construction of an organic type
US7087453B2 (en) 2000-08-09 2006-08-08 Advanced Photonics Technologies Ag Method and device for the production of a semiconducting and/or electroluminescence-displaying organic layered structure
DE10038895B4 (en) * 2000-08-09 2006-04-06 Advanced Photonics Technologies Ag The method and use of an apparatus for producing semi-conducting and / or electroluminescent pointing organic layer structure
WO2002019443A1 (en) * 2000-09-01 2002-03-07 Siemens Aktiengesellschaft Organic field effect transistor, method for structuring an ofet and integrated circuit
US6960489B2 (en) 2000-09-01 2005-11-01 Siemens Aktiengesellschaft Method for structuring an OFET
DE10043204A1 (en) * 2000-09-01 2002-04-04 Siemens Ag An organic field-effect transistor, method for structuring an OFET and an integrated circuit
US6903958B2 (en) 2000-09-13 2005-06-07 Siemens Aktiengesellschaft Method of writing to an organic memory
WO2002047183A1 (en) * 2000-12-08 2002-06-13 Siemens Aktiengesellschaft Organic field-effect transistor, method for structuring an ofet and integrated circuit
US7229868B2 (en) 2000-12-08 2007-06-12 Polyic Gmbh & Co. Kg Organic field-effect transistor, method for structuring an OFET and integrated circuit
DE10061297A1 (en) * 2000-12-08 2002-06-27 Siemens Ag An organic field-effect transistor, method of Sturkturierung an OFET and an integrated circuit
DE10061297C2 (en) * 2000-12-08 2003-05-28 Siemens Ag A process for Sturkturierung an OFET
DE10105914C1 (en) * 2001-02-09 2002-10-10 Siemens Ag An organic field effect transistor having photostructured gate dielectric and a process for its production
US7238961B2 (en) 2001-02-09 2007-07-03 Polyic Gmbh & Co. Kg Organic field effect transistor with a photostructured gate dielectric, method for the production and use thereof in organic electronics
US7298023B2 (en) 2001-10-16 2007-11-20 Polyic Gmbh & Co. Kg Electronic device with organic insulator
US7064345B2 (en) 2001-12-11 2006-06-20 Siemens Aktiengesellschaft Organic field effect transistor with off-set threshold voltage and the use thereof
EP1472744A1 (en) * 2002-01-25 2004-11-03 MOTOROLA INC., A Corporation of the state of Delaware Organic semiconductor device and method
EP1472744A4 (en) * 2002-01-25 2010-03-10 Motorola Inc Organic semiconductor device and method
US7709865B2 (en) 2002-06-13 2010-05-04 Polyic Gmbh & Co. Kg Substrate for an organic field effect transistor, use of said substrate, method of increasing the charge carrier mobility, and organic field effect transistor (OFET)
US6803309B2 (en) 2002-07-03 2004-10-12 Taiwan Semiconductor Manufacturing Co., Ltd Method for depositing an adhesion/barrier layer to improve adhesion and contact resistance
US8044517B2 (en) 2002-07-29 2011-10-25 Polyic Gmbh & Co. Kg Electronic component comprising predominantly organic functional materials and a method for the production thereof
DE10255870A1 (en) * 2002-11-29 2004-06-17 Infineon Technologies Ag A process for preparation of layers from a layer material on organic semiconductor layers useful in the production of organic field effect transistors with top-contact architecture from conductive polymers
US7678857B2 (en) 2003-09-03 2010-03-16 Polyic Gmbh & Co. Kg Polymer mixtures for printed polymer electronic circuits
US7847695B2 (en) 2004-08-23 2010-12-07 Polyic Gmbh & Co. Kg External package capable of being radio-tagged
US7786818B2 (en) 2004-12-10 2010-08-31 Polyic Gmbh & Co. Kg Electronic component comprising a modulator
US7940159B2 (en) 2004-12-10 2011-05-10 Polyic Gmbh & Co. Kg Identification system
US7724550B2 (en) 2004-12-23 2010-05-25 Polyic Gmbh & Co. Kg Organic rectifier
US7843342B2 (en) 2005-03-01 2010-11-30 Polyic Gmbh & Co. Kg Organic clock generator
EP1701387A2 (en) * 2005-03-09 2006-09-13 Samsung Electronics Co., Ltd. Organic thin film transistor array panel and manufacturing method thereof
EP1701387A3 (en) * 2005-03-09 2012-05-09 Samsung Electronics Co., Ltd. Organic thin film transistor array panel and manufacturing method thereof
US7812343B2 (en) 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same
EP2006915A2 (en) * 2006-03-29 2008-12-24 Pioneer Corporation Organic thin film transistor device and method for manufacturing same
EP2006915A4 (en) * 2006-03-29 2012-10-24 Pioneer Corp Organic thin film transistor device and method for manufacturing same
US8367461B2 (en) 2007-07-17 2013-02-05 Merck Patent Gmbh Functional material for printed electronic components
DE102007043920A1 (en) 2007-07-17 2009-01-22 Merck Patent Gmbh A functional material for printed electronic components
DE102009004491A1 (en) 2009-01-09 2010-07-15 Merck Patent Gmbh A functional material for printed electronic components
WO2010078907A1 (en) 2009-01-09 2010-07-15 Merck Patent Gmbh Functional material for printed electronic components

Similar Documents

Publication Publication Date Title
EP0242626B1 (en) Method for mounting electronic components on a substrate
DE4415984A1 (en) Semiconductor sensor with a protective layer
DE10017422A1 (en) The micromechanical component and method of manufacture
DE19628237A1 (en) Semiconductor device and manufacturing method of the same
EP0111086A2 (en) Process for making sub-micrometric structures and use of this process in making deep dielectric isolation regions with a sub-micrometric width in a semiconductor body
EP0001038A1 (en) A method for making a silicon mask and its utilisation
DE19845296A1 (en) A method for contacting a circuit chip
EP0783107A1 (en) Manufacturing process for a micromechanical element with movable structure
DE4001399C1 (en) Metallic microstructures - formed on substrates, by putting poly:methyl methacrylate] between moulding tool and silicon substrate
DE4400985C1 (en) Method for producing a three-dimensional circuit arrangement
EP0177845A1 (en) Integrated circuit with multilayer wiring and method for manufacturing it
DE19910482A1 (en) Wiring level production on a support, especially for multilayer circuit board production, involves leaving an exposed and developed photosensitive resin layer as insulation between conductive regions
EP0567815A2 (en) Method of making a contact hole to a doped region
EP0386459A1 (en) Method for producing thin-film circuits
EP1599078A2 (en) Method of mounting an electronic component on a substrate
DE4222584A1 (en) Hyperfine structure mfr. to increase capacitor area in IC - by anisotropic etching of a doped poly:silicon layer or matrix layer using a deposited poly:silicon@ layer consisting of isolated hemispheres as masking aid
DE10328811A1 (en) Compound to form a self-assembled monolayer layer structure semiconductor device having a layer structure and process for producing a multilayer structure
DE19639934A1 (en) A method for flip chip bonding of a semiconductor chip with a low-port-count
EP0022483A1 (en) Field-effect transistor and process for its production
DE3637513A1 (en) Method of producing finely structured contact electrodes of power semiconductor components
EP0001429A1 (en) Process for forming thin film patterns by use of lift-off processing
DE19641777A1 (en) A method for manufacturing a sensor with a metal electrode in an MOS device
DE10349963A1 (en) A method for preparing a film
DE10200869A1 (en) A method for generating a protective cover for a component
DE19732250A1 (en) A process for the production of metallic microstructures

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8139 Disposal/non-payment of the annual fee