DE3768112D1 - Strahlungsdetektor. - Google Patents

Strahlungsdetektor.

Info

Publication number
DE3768112D1
DE3768112D1 DE8787102962T DE3768112T DE3768112D1 DE 3768112 D1 DE3768112 D1 DE 3768112D1 DE 8787102962 T DE8787102962 T DE 8787102962T DE 3768112 T DE3768112 T DE 3768112T DE 3768112 D1 DE3768112 D1 DE 3768112D1
Authority
DE
Germany
Prior art keywords
radiation detector
detector
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787102962T
Other languages
English (en)
Inventor
Tamotsu Hatayama
Yujiro Naruse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61045958A external-priority patent/JPH07107941B2/ja
Priority claimed from JP61095413A external-priority patent/JPH07107942B2/ja
Priority claimed from JP61206832A external-priority patent/JP2609590B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3768112D1 publication Critical patent/DE3768112D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/28Measuring radiation intensity with secondary-emission detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914Measurement of spatial distribution of radiation
    • G01T1/2921Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
DE8787102962T 1986-03-03 1987-03-03 Strahlungsdetektor. Expired - Lifetime DE3768112D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61045958A JPH07107941B2 (ja) 1986-03-03 1986-03-03 放射線検出装置
JP61095413A JPH07107942B2 (ja) 1986-04-24 1986-04-24 放射線検出装置
JP61206832A JP2609590B2 (ja) 1986-09-04 1986-09-04 二次元放射線検出器

Publications (1)

Publication Number Publication Date
DE3768112D1 true DE3768112D1 (de) 1991-04-04

Family

ID=27292454

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787102962T Expired - Lifetime DE3768112D1 (de) 1986-03-03 1987-03-03 Strahlungsdetektor.

Country Status (3)

Country Link
US (1) US4926052A (de)
EP (1) EP0239808B1 (de)
DE (1) DE3768112D1 (de)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066861A (en) * 1987-07-22 1991-11-19 Kanegafuchi Chemical Industry Co., Ltd. X ray detecting device
GB8902443D0 (en) * 1989-02-03 1989-03-22 Jones Barbara L Radiation detector
CA2065246C (en) * 1989-09-06 2001-11-13 Larry E. Antonuk Multi-element-amorphous-silicon-detector-array for real-time imaging and dosimetry of megavoltage photons and diagnostic x-rays
US5262649A (en) * 1989-09-06 1993-11-16 The Regents Of The University Of Michigan Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation
FR2652655A1 (fr) * 1989-10-04 1991-04-05 Commissariat Energie Atomique Dispositif matriciel de grandes dimensions pour la prise ou la restitution d'images.
DE4125929A1 (de) * 1991-08-05 1993-02-11 Siemens Ag Strahlungsdetektor
DE4125928A1 (de) * 1991-08-05 1993-02-11 Siemens Ag Detektorsystem
US5352897A (en) * 1992-03-16 1994-10-04 Olympus Optical Co., Ltd. Device for detecting X-rays
US5401973A (en) * 1992-12-04 1995-03-28 Atomic Energy Of Canada Limited Industrial material processing electron linear accelerator
AU6574694A (en) * 1993-04-28 1994-11-21 University Of Surrey Radiation detectors
US5585638A (en) * 1995-12-14 1996-12-17 General Electric Company X-ray detector for automatic exposure control of an imaging apparatus
US6013916A (en) * 1997-07-23 2000-01-11 The Regents Of The University Of Michigan Flat panel dosimeter
DE19804515B4 (de) * 1998-02-05 2004-05-13 Forschungszentrum Jülich GmbH Ortsauflösender γ-Detektor
US6285029B1 (en) * 1998-07-27 2001-09-04 Imarad Imaging Systems Ltd. Semiconductor gamma-ray detector
EP1309994A2 (de) * 2000-08-18 2003-05-14 Siemens Aktiengesellschaft Verkapseltes organisch-elektronisches bauteil, verfahren zu seiner herstellung und seine verwendung
DE10044842A1 (de) * 2000-09-11 2002-04-04 Siemens Ag Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters
US20040026121A1 (en) * 2000-09-22 2004-02-12 Adolf Bernds Electrode and/or conductor track for organic components and production method thereof
DE10061297C2 (de) * 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
DE10061299A1 (de) * 2000-12-08 2002-06-27 Siemens Ag Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu
DE10105914C1 (de) * 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
JP2005509200A (ja) * 2001-03-26 2005-04-07 シーメンス アクチエンゲゼルシヤフト 少なくとも2つの有機電子構成エレメントを有する装置、および該装置のための製造方法
DE10126860C2 (de) * 2001-06-01 2003-05-28 Siemens Ag Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen
DE10126859A1 (de) * 2001-06-01 2002-12-12 Siemens Ag Verfahren zur Erzeugung von leitfähigen Strukturen mittels Drucktechnik sowie daraus hergestellte aktive Bauelemente für integrierte Schaltungen
DE10151036A1 (de) * 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
DE10151440C1 (de) 2001-10-18 2003-02-06 Siemens Ag Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung
ITMI20020231A1 (it) * 2002-02-08 2003-08-08 Milano Politecnico Fotorivelatore a semiconduttore organico
DE10212639A1 (de) * 2002-03-21 2003-10-16 Siemens Ag Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen
DE10212640B4 (de) * 2002-03-21 2004-02-05 Siemens Ag Logische Bauteile aus organischen Feldeffekttransistoren
DE10226370B4 (de) * 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET)
DE60318848T2 (de) * 2002-06-25 2009-02-05 Commissariat à l'Energie Atomique Abbildungsvorrichtung
US8044517B2 (en) * 2002-07-29 2011-10-25 Polyic Gmbh & Co. Kg Electronic component comprising predominantly organic functional materials and a method for the production thereof
JP2005537637A (ja) 2002-08-23 2005-12-08 ジーメンス アクツィエンゲゼルシャフト 過電圧保護用の有機構成部品および関連する回路
WO2004042837A2 (de) * 2002-11-05 2004-05-21 Siemens Aktiengesellschaft Organisches elektronisches bauteil mit hochaufgelöster strukturierung und herstellungsverfahren dazu
US6921903B2 (en) * 2002-11-05 2005-07-26 The Regents Of The University Of Michigan Method and system for measuring neutron emissions and ionizing radiation, solid state detector for use therein, and imaging system and array of such detectors for use therein
DE10253154A1 (de) 2002-11-14 2004-05-27 Siemens Ag Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe
DE50306538D1 (de) * 2002-11-19 2007-03-29 Polyic Gmbh & Co Kg Organische elektronische schaltung mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu
EP1563554B1 (de) * 2002-11-19 2012-01-04 PolyIC GmbH & Co. KG Organisches elektronisches bauelement mit gleichem organischem material für zumindest zwei funktionsschichten
DE10300521A1 (de) * 2003-01-09 2004-07-22 Siemens Ag Organoresistiver Speicher
DE10302149A1 (de) * 2003-01-21 2005-08-25 Siemens Ag Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik
WO2004066348A2 (de) * 2003-01-21 2004-08-05 Polyic Gmbh & Co. Kg Organisches elektronikbauteil und verfahren zur herstellung organischer elektronik
DE502004011477D1 (de) * 2003-01-29 2010-09-16 Polyic Gmbh & Co Kg Organisches speicherbauelement
CN1774806B (zh) 2003-02-14 2010-06-16 日本电气株式会社 线路元件和使用线路元件的半导体电路
DE10330062A1 (de) * 2003-07-03 2005-01-27 Siemens Ag Verfahren und Vorrichtung zur Strukturierung von organischen Schichten
DE10330064B3 (de) * 2003-07-03 2004-12-09 Siemens Ag Logikgatter mit potentialfreier Gate-Elektrode für organische integrierte Schaltungen
DE10338277A1 (de) * 2003-08-20 2005-03-17 Siemens Ag Organischer Kondensator mit spannungsgesteuerter Kapazität
DE10339036A1 (de) 2003-08-25 2005-03-31 Siemens Ag Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu
DE10340644B4 (de) * 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
DE10340643B4 (de) * 2003-09-03 2009-04-16 Polyic Gmbh & Co. Kg Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht
JP2005106692A (ja) * 2003-09-30 2005-04-21 Hitachi Ltd 半導体放射線検出器及び放射線撮像装置
US7057187B1 (en) * 2003-11-07 2006-06-06 Xradia, Inc. Scintillator optical system and method of manufacture
DE102004002024A1 (de) * 2004-01-14 2005-08-11 Siemens Ag Organischer Transistor mit selbstjustierender Gate-Elektrode und Verfahren zu dessen Herstellung
DE102004040831A1 (de) * 2004-08-23 2006-03-09 Polyic Gmbh & Co. Kg Funketikettfähige Umverpackung
DE102004059464A1 (de) * 2004-12-10 2006-06-29 Polyic Gmbh & Co. Kg Elektronikbauteil mit Modulator
DE102004059467A1 (de) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gatter aus organischen Feldeffekttransistoren
DE102004059465A1 (de) * 2004-12-10 2006-06-14 Polyic Gmbh & Co. Kg Erkennungssystem
DE102004063435A1 (de) 2004-12-23 2006-07-27 Polyic Gmbh & Co. Kg Organischer Gleichrichter
DE102005009819A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe
DE102005009820A1 (de) * 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Logik-Schaltelementen
DE102005017655B4 (de) * 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Mehrschichtiger Verbundkörper mit elektronischer Funktion
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
DE102005035590A1 (de) * 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Elektronisches Bauelement
DE102005035589A1 (de) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Verfahren zur Herstellung eines elektronischen Bauelements
DE102005042166A1 (de) * 2005-09-06 2007-03-15 Polyic Gmbh & Co.Kg Organisches Bauelement und ein solches umfassende elektrische Schaltung
DE102005044306A1 (de) * 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Elektronische Schaltung und Verfahren zur Herstellung einer solchen
US7375345B2 (en) 2005-10-26 2008-05-20 Tetra Laval Holdings & Finance S.A. Exposed conductor system and method for sensing an electron beam
US7368739B2 (en) 2005-10-26 2008-05-06 Tetra Laval Holdings & Finance S.A. Multilayer detector and method for sensing an electron beam
US7573040B2 (en) * 2007-03-23 2009-08-11 General Electric Company Energy discriminating detector different materials direct conversion layers
CN101569530B (zh) * 2008-04-30 2013-03-27 Ge医疗系统环球技术有限公司 X-射线检测器和x-射线ct设备
DE102008026216B4 (de) * 2008-05-30 2010-07-29 Polyic Gmbh & Co. Kg Elektronische Schaltung
US7999257B2 (en) * 2008-06-02 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Process for eliminating delamination between amorphous silicon layers
US7947959B2 (en) * 2009-04-21 2011-05-24 Honeywell International Inc. Enhanced sensitivity solid state radiation detector
KR101310743B1 (ko) * 2011-11-01 2013-09-25 주식회사 지멤스 다층 구조의 엑스선 이미지 센서 및 엑스선 이미지 촬영 시스템
DE102014222690A1 (de) * 2014-11-06 2016-05-12 Siemens Aktiengesellschaft Detektormodul für einen Röntgendetektor
CN110031883B (zh) * 2019-03-05 2022-06-07 中国辐射防护研究院 一种基于无线电容式高电离辐射剂量传感器
WO2021087290A1 (en) * 2019-10-31 2021-05-06 Trustees Of Dartmouth College Hard x-ray detectors with photon energy attenuation and electron generation-detection layers with integration capability to cmos image sensor (cis)-based or quanta image sensor (qis)-based devices

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2847585A (en) * 1952-10-31 1958-08-12 Rca Corp Radiation responsive voltage sources
US2879400A (en) * 1954-04-12 1959-03-24 Westinghouse Electric Corp Loaded dielectric x-ray detector
GB1018402A (en) * 1961-05-09 1966-01-26 Ass Elect Ind Improvements relating to radiation detectors
US3396318A (en) * 1966-09-16 1968-08-06 Electro Nuclear Lab Inc Charged particle detector with lithium compensated intrinsic silicon as an intermediate region
US3598997A (en) * 1968-07-05 1971-08-10 Gen Electric Schottky barrier atomic particle and x-ray detector
US3757123A (en) * 1972-07-19 1973-09-04 Hewlett Packard Co Schottky barrier infrared detector having ultrathin metal layer
JPS5226974B2 (de) * 1973-02-14 1977-07-18
US3864722A (en) * 1973-05-02 1975-02-04 Rca Corp Radiation sensing arrays
JPS5310433B2 (de) * 1975-03-10 1978-04-13
GB1559664A (en) * 1977-02-17 1980-01-23 Tokyo Shibaura Electric Co Semiconductor radiation detector
JPS57154083A (en) * 1981-03-19 1982-09-22 Yokogawa Hokushin Electric Corp Ct scanner
JPS58118163A (ja) * 1982-01-05 1983-07-14 Toshiba Corp 半導体放射線検出器
US4531055A (en) * 1983-01-05 1985-07-23 The United States Of America As Represented By The Secretary Of The Air Force Self-guarding Schottky barrier infrared detector array
JPS60130274A (ja) * 1983-12-19 1985-07-11 Toshiba Corp 固体撮像装置
JPS6118183A (ja) * 1984-07-04 1986-01-27 Fuji Photo Film Co Ltd 固体光検出デバイス
JPS6181087A (ja) * 1984-09-28 1986-04-24 Olympus Optical Co Ltd 固体撮像装置
US4785186A (en) * 1986-10-21 1988-11-15 Xerox Corporation Amorphous silicon ionizing particle detectors

Also Published As

Publication number Publication date
EP0239808B1 (de) 1991-02-27
US4926052A (en) 1990-05-15
EP0239808A1 (de) 1987-10-07

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