DE69131723T2 - Integrierte Schaltung mit verbesserter Speisespannungssteuerung - Google Patents
Integrierte Schaltung mit verbesserter SpeisespannungssteuerungInfo
- Publication number
- DE69131723T2 DE69131723T2 DE69131723T DE69131723T DE69131723T2 DE 69131723 T2 DE69131723 T2 DE 69131723T2 DE 69131723 T DE69131723 T DE 69131723T DE 69131723 T DE69131723 T DE 69131723T DE 69131723 T2 DE69131723 T2 DE 69131723T2
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- circuit
- transistor
- supply voltage
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001514 detection method Methods 0.000 claims description 45
- 230000004044 response Effects 0.000 claims description 20
- 230000001105 regulatory effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 description 35
- 239000011159 matrix material Substances 0.000 description 28
- 230000002093 peripheral effect Effects 0.000 description 27
- 239000003990 capacitor Substances 0.000 description 13
- 230000015654 memory Effects 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000872 buffer Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/515,977 US5063304A (en) | 1990-04-27 | 1990-04-27 | Integrated circuit with improved on-chip power supply control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69131723D1 DE69131723D1 (de) | 1999-11-25 |
| DE69131723T2 true DE69131723T2 (de) | 2000-06-08 |
Family
ID=24053590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69131723T Expired - Fee Related DE69131723T2 (de) | 1990-04-27 | 1991-03-28 | Integrierte Schaltung mit verbesserter Speisespannungssteuerung |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5063304A (enExample) |
| EP (1) | EP0453813B1 (enExample) |
| JP (1) | JPH0644774A (enExample) |
| KR (1) | KR100248846B1 (enExample) |
| DE (1) | DE69131723T2 (enExample) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5063304A (en) * | 1990-04-27 | 1991-11-05 | Texas Instruments Incorporated | Integrated circuit with improved on-chip power supply control |
| US5498972A (en) * | 1990-08-15 | 1996-03-12 | Telefonaktiebolaget Lm Ericsson | Device for monitoring the supply voltage on integrated circuits |
| KR940008286B1 (ko) * | 1991-08-19 | 1994-09-09 | 삼성전자 주식회사 | 내부전원발생회로 |
| KR930008886B1 (ko) * | 1991-08-19 | 1993-09-16 | 삼성전자 주식회사 | 전기적으로 프로그램 할 수 있는 내부전원 발생회로 |
| JP3076097B2 (ja) * | 1991-08-26 | 2000-08-14 | 日本電気株式会社 | 基準電位発生回路 |
| JP2688548B2 (ja) * | 1991-09-10 | 1997-12-10 | シャープ株式会社 | 液晶パネル駆動用半導体装置 |
| KR930008854A (ko) * | 1991-10-16 | 1993-05-22 | 김광호 | 반도체 메모리의 내부전압공급장치 |
| JP2803410B2 (ja) * | 1991-10-18 | 1998-09-24 | 日本電気株式会社 | 半導体集積回路 |
| JP2697412B2 (ja) * | 1991-10-25 | 1998-01-14 | 日本電気株式会社 | ダイナミックｒａｍ |
| CN1075690C (zh) * | 1991-11-07 | 2001-11-28 | 摩托罗拉公司 | 混合信号处理系统及其供电方法 |
| JP2910474B2 (ja) * | 1992-02-21 | 1999-06-23 | 日本電気株式会社 | 半導体集積回路装置 |
| US5781784A (en) * | 1992-07-09 | 1998-07-14 | Zilog, Inc. | Dynamic power management of solid state memories |
| ATE139875T1 (de) * | 1992-09-16 | 1996-07-15 | Siemens Ag | Cmos-pufferschaltung |
| KR960005387Y1 (ko) * | 1992-09-24 | 1996-06-28 | 문정환 | 반도체 메모리의 번 인 테스트(Burn-In Test) 장치 |
| JP2768172B2 (ja) * | 1992-09-30 | 1998-06-25 | 日本電気株式会社 | 半導体メモリ装置 |
| JP3236105B2 (ja) * | 1993-03-17 | 2001-12-10 | 富士通株式会社 | 不揮発性半導体記憶装置及びその動作試験方法 |
| KR0131746B1 (ko) * | 1993-12-01 | 1998-04-14 | 김주용 | 내부 강압전원 회로 |
| JPH07229932A (ja) * | 1994-02-17 | 1995-08-29 | Toshiba Corp | 電位検知回路 |
| JPH07260874A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 半導体装置及びその試験方法 |
| WO1995026064A1 (en) * | 1994-03-21 | 1995-09-28 | Intel Corporation | Method and apparatus for integrated circuit voltage regulation |
| US5497348A (en) * | 1994-05-31 | 1996-03-05 | Texas Instruments Incorporated | Burn-in detection circuit |
| US6127881A (en) * | 1994-05-31 | 2000-10-03 | Texas Insruments Incorporated | Multiplier circuit |
| US6060945A (en) * | 1994-05-31 | 2000-05-09 | Texas Instruments Incorporated | Burn-in reference voltage generation |
| US6204701B1 (en) | 1994-05-31 | 2001-03-20 | Texas Instruments Incorporated | Power up detection circuit |
| JP3072880B2 (ja) * | 1994-06-02 | 2000-08-07 | 株式会社アドバンテスト | Ｉｃ試験用電圧発生回路 |
| US5655113A (en) * | 1994-07-05 | 1997-08-05 | Monolithic System Technology, Inc. | Resynchronization circuit for a memory system and method of operating same |
| US5870617A (en) * | 1994-12-22 | 1999-02-09 | Texas Instruments Incorporated | Systems, circuits and methods for mixed voltages and programmable voltage rails on integrated circuits |
| US5671149A (en) * | 1995-01-11 | 1997-09-23 | Dell Usa, L.P. | Programmable board mounted voltage regulators |
| US5602790A (en) * | 1995-08-15 | 1997-02-11 | Micron Technology, Inc. | Memory device with MOS transistors having bodies biased by temperature-compensated voltage |
| DE69513658T2 (de) * | 1995-09-29 | 2000-05-31 | Stmicroelectronics S.R.L., Agrate Brianza | Spannungsregler für nichtflüchtige, elektrisch programmierbare Halbleiterspeicheranordnungen |
| KR0179551B1 (ko) * | 1995-11-01 | 1999-04-15 | 김주용 | 고전위 발생기 |
| KR100190080B1 (ko) * | 1996-08-20 | 1999-06-01 | 윤종용 | 반도체 메모리 장치의 메모리 셀 테스트용 고전압 감지 회로 |
| KR100200926B1 (ko) * | 1996-08-29 | 1999-06-15 | 윤종용 | 내부전원전압 발생회로 |
| JPH10145194A (ja) * | 1996-11-13 | 1998-05-29 | Sharp Corp | 電圧比較器 |
| US5912856A (en) * | 1996-12-30 | 1999-06-15 | Hyundai Electronics Industries Co., Ltd. | Internal voltage generating circuit in semiconductor memory device |
| JPH10260741A (ja) * | 1997-03-17 | 1998-09-29 | Oki Electric Ind Co Ltd | 定電圧発生回路 |
| US5847591A (en) * | 1997-03-31 | 1998-12-08 | Siemens Aktiengesellschaft | Voltage detection circuit and internal voltage clamp circuit |
| KR100253282B1 (ko) * | 1997-04-01 | 2000-05-01 | 김영환 | 메모리소자의소모전력자동감소회로 |
| JP3972414B2 (ja) * | 1997-06-20 | 2007-09-05 | ソニー株式会社 | データ判定回路およびデータ判定方法 |
| US5925913A (en) * | 1997-08-25 | 1999-07-20 | Advanced Micro Devices, Inc. | System for enhancing the performance of a circuit by reducing the channel length of one or more transistors |
| US5942932A (en) * | 1997-08-26 | 1999-08-24 | Nanoamp Solutions, Inc. | Circuit and method for preventing latch-up in a CMOS semiconductor device |
| JP3047869B2 (ja) * | 1997-09-26 | 2000-06-05 | 日本電気株式会社 | 出力振幅調整回路 |
| US5894215A (en) * | 1997-10-30 | 1999-04-13 | Xerox Corporation | Shunt voltage regulator utilizing a floating reference voltage |
| JP3620636B2 (ja) * | 1998-11-25 | 2005-02-16 | 株式会社村田製作所 | 積層セラミックコンデンサの選別方法 |
| US6469517B1 (en) * | 1998-11-25 | 2002-10-22 | Murata Manufacturing Co., Ltd. | Sorting method of monolithic ceramic capacitors based on insulation resistance |
| FR2794867B1 (fr) * | 1999-06-08 | 2001-08-10 | St Microelectronics Sa | Circuit de detection et de memorisation d'une surtension |
| JP3551858B2 (ja) | 1999-09-14 | 2004-08-11 | 日本電気株式会社 | 半導体メモリ装置 |
| IT1314090B1 (it) * | 1999-11-26 | 2002-12-04 | St Microelectronics Srl | Generatore ad impulsi indipendente dalla tensione di alimentazione. |
| US6282130B1 (en) * | 2000-06-09 | 2001-08-28 | Sandisk Corporation | EEPROM memory chip with multiple use pinouts |
| JP4043703B2 (ja) * | 2000-09-04 | 2008-02-06 | 株式会社ルネサステクノロジ | 半導体装置、マイクロコンピュータ、及びフラッシュメモリ |
| US6381182B1 (en) * | 2000-09-13 | 2002-04-30 | Infineon Technologies Ag | Combined tracking of WLL and VPP low threshold voltage in DRAM array |
| US6629291B1 (en) * | 2000-09-25 | 2003-09-30 | International Business Machines Corporation | Integrated power solution for system on chip applications |
| US6724594B2 (en) * | 2000-12-20 | 2004-04-20 | National Semiconductor Corporation | Over voltage protection test multiplexer and methods of operating the same |
| KR100550637B1 (ko) * | 2000-12-30 | 2006-02-10 | 주식회사 하이닉스반도체 | 저전압 감지기를 내장한 고전압 검출기 |
| US6968157B2 (en) * | 2001-08-22 | 2005-11-22 | University Of Maryland | System and method for protecting devices from interference signals |
| KR100454118B1 (ko) * | 2001-10-23 | 2004-10-26 | 삼성전자주식회사 | 반도체 메모리 장치 및 그것의 테스트 방법 |
| US6731486B2 (en) | 2001-12-19 | 2004-05-04 | Fairchild Semiconductor Corporation | Output-powered over-voltage protection circuit |
| JP3947044B2 (ja) | 2002-05-31 | 2007-07-18 | 富士通株式会社 | 入出力バッファ |
| KR100555509B1 (ko) * | 2003-07-23 | 2006-03-03 | 삼성전자주식회사 | 선택적 전압 레퍼런스로 소모 전력을 절감하는 내부 전압변환기, 이를 구비한 반도체 장치 및 그 방법 |
| JP4549711B2 (ja) * | 2004-03-29 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | 半導体回路装置 |
| KR20070082230A (ko) * | 2006-02-15 | 2007-08-21 | 삼성전자주식회사 | 액정 표시 장치용 테스트 장치 및 그 방법 |
| US20100001704A1 (en) * | 2008-07-07 | 2010-01-07 | Advanced Analogic Technologies, Inc. | Programmable Step-Down Switching Voltage Regulators with Adaptive Power MOSFETs |
| US8689023B2 (en) | 2011-10-17 | 2014-04-01 | Freescale Semiconductor, Inc. | Digital logic controller for regulating voltage of a system on chip |
| US8553472B2 (en) | 2011-12-05 | 2013-10-08 | Apple Inc. | Memory with a shared I/O including an output data latch having an integrated clamp |
| US8724360B2 (en) | 2011-12-15 | 2014-05-13 | Micron Technology, Inc. | Wiring configuration of a bus system and power wires in a memory chip |
| US9383759B2 (en) | 2014-10-07 | 2016-07-05 | Freescale Semiconductor, Inc. | Voltage monitoring system |
| US10859610B2 (en) * | 2016-04-27 | 2020-12-08 | The University Of Bristol | Voltage detector and voltage detector system |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2813402A1 (de) * | 1978-03-29 | 1979-10-11 | Bosch Gmbh Robert | Einrichtung zur stabilisierung einer versorgungsspannung |
| US4482985A (en) * | 1981-04-17 | 1984-11-13 | Hitachi, Ltd. | Semiconductor integrated circuit |
| US4709202A (en) * | 1982-06-07 | 1987-11-24 | Norand Corporation | Battery powered system |
| US4527254A (en) * | 1982-11-15 | 1985-07-02 | International Business Machines Corporation | Dynamic random access memory having separated VDD pads for improved burn-in |
| US4679172A (en) * | 1985-05-28 | 1987-07-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Dynamic memory with increased data retention time |
| US4670861A (en) * | 1985-06-21 | 1987-06-02 | Advanced Micro Devices, Inc. | CMOS N-well bias generator and gating system |
| JP2592234B2 (ja) * | 1985-08-16 | 1997-03-19 | 富士通株式会社 | 半導体装置 |
| US4701884A (en) * | 1985-08-16 | 1987-10-20 | Hitachi, Ltd. | Semiconductor memory for serial data access |
| US4815041A (en) * | 1987-03-19 | 1989-03-21 | American Telephone And Telegraph Company | Current surge elimination for CMOS devices |
| JPS63282813A (ja) * | 1987-05-15 | 1988-11-18 | Aisin Seiki Co Ltd | 入出力装置 |
| DE3878345T2 (de) * | 1987-08-17 | 1993-05-27 | Nippon Electric Co | Bimosschaltung, faehig zum betrieb bei hoher geschwindigkeit mit niedrigem verbrauch. |
| US5046052A (en) * | 1988-06-01 | 1991-09-03 | Sony Corporation | Internal low voltage transformation circuit of static random access memory |
| JPH07105160B2 (ja) * | 1989-05-20 | 1995-11-13 | 東芝マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
| US5063304A (en) * | 1990-04-27 | 1991-11-05 | Texas Instruments Incorporated | Integrated circuit with improved on-chip power supply control |
-
1990
- 1990-04-27 US US07/515,977 patent/US5063304A/en not_active Expired - Lifetime
-
1991
- 1991-03-28 DE DE69131723T patent/DE69131723T2/de not_active Expired - Fee Related
- 1991-03-28 EP EP91104998A patent/EP0453813B1/en not_active Expired - Lifetime
- 1991-04-26 JP JP3095937A patent/JPH0644774A/ja active Pending
- 1991-04-26 KR KR1019910006716A patent/KR100248846B1/ko not_active Expired - Lifetime
-
1993
- 1993-02-26 US US08/024,924 patent/US5300824A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR910019199A (ko) | 1991-11-30 |
| JPH0644774A (ja) | 1994-02-18 |
| DE69131723D1 (de) | 1999-11-25 |
| EP0453813B1 (en) | 1999-10-20 |
| US5063304B1 (enExample) | 1993-02-23 |
| US5300824A (en) | 1994-04-05 |
| EP0453813A2 (en) | 1991-10-30 |
| KR100248846B1 (ko) | 2000-03-15 |
| EP0453813A3 (en) | 1992-08-19 |
| US5063304A (en) | 1991-11-05 |
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| DE19730347B4 (de) | Statische Halbleitervorrichtung, die eine variable Stromversorgungsspannung, die an eine Speicherzelle angelegt wird, abhängig von dem Status im Gebrauch aufweist, und Verfahren zum Testen derselben |
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