FR2794867B1 - Circuit de detection et de memorisation d'une surtension - Google Patents

Circuit de detection et de memorisation d'une surtension

Info

Publication number
FR2794867B1
FR2794867B1 FR9907458A FR9907458A FR2794867B1 FR 2794867 B1 FR2794867 B1 FR 2794867B1 FR 9907458 A FR9907458 A FR 9907458A FR 9907458 A FR9907458 A FR 9907458A FR 2794867 B1 FR2794867 B1 FR 2794867B1
Authority
FR
France
Prior art keywords
memory circuit
overvoltage detection
overvoltage
detection
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9907458A
Other languages
English (en)
Other versions
FR2794867A1 (fr
Inventor
Jean Devin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9907458A priority Critical patent/FR2794867B1/fr
Priority to US09/590,151 priority patent/US6411544B1/en
Publication of FR2794867A1 publication Critical patent/FR2794867A1/fr
Application granted granted Critical
Publication of FR2794867B1 publication Critical patent/FR2794867B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
FR9907458A 1999-06-08 1999-06-08 Circuit de detection et de memorisation d'une surtension Expired - Fee Related FR2794867B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9907458A FR2794867B1 (fr) 1999-06-08 1999-06-08 Circuit de detection et de memorisation d'une surtension
US09/590,151 US6411544B1 (en) 1999-06-08 2000-06-08 Circuit for detecting and recording a voltage surge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9907458A FR2794867B1 (fr) 1999-06-08 1999-06-08 Circuit de detection et de memorisation d'une surtension

Publications (2)

Publication Number Publication Date
FR2794867A1 FR2794867A1 (fr) 2000-12-15
FR2794867B1 true FR2794867B1 (fr) 2001-08-10

Family

ID=9546713

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9907458A Expired - Fee Related FR2794867B1 (fr) 1999-06-08 1999-06-08 Circuit de detection et de memorisation d'une surtension

Country Status (2)

Country Link
US (1) US6411544B1 (fr)
FR (1) FR2794867B1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7142400B1 (en) * 2002-03-27 2006-11-28 Cypress Semiconductor Corp. Method and apparatus for recovery from power supply transient stress conditions
FR2847717B1 (fr) 2002-11-26 2005-02-11 St Microelectronics Sa Circuit limiteur de tension, notamment pour pompe de charge
KR100571637B1 (ko) * 2003-10-30 2006-04-17 주식회사 하이닉스반도체 지연 고정 루프의 전원 전압 공급 장치
US7630184B2 (en) * 2006-09-25 2009-12-08 Agere Systems Inc. Method and apparatus for an over-voltage detection circuit
US8238068B2 (en) * 2009-04-24 2012-08-07 Silicon Laboratories Inc. Electrical over-stress detection circuit
US9575111B1 (en) * 2013-07-15 2017-02-21 Xilinx, Inc. On chip detection of electrical overstress events
US10557881B2 (en) 2015-03-27 2020-02-11 Analog Devices Global Electrical overstress reporting
US9871373B2 (en) 2015-03-27 2018-01-16 Analog Devices Global Electrical overstress recording and/or harvesting
CN105092946A (zh) * 2015-09-16 2015-11-25 成都比善科技开发有限公司 一种三相电路的过电压监测系统
US20170093152A1 (en) * 2015-09-25 2017-03-30 Mediatek Inc. Esd detection circuit
US10338132B2 (en) 2016-04-19 2019-07-02 Analog Devices Global Wear-out monitor device
US10365322B2 (en) 2016-04-19 2019-07-30 Analog Devices Global Wear-out monitor device
US10418808B2 (en) * 2017-02-13 2019-09-17 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Detecting electrostatic discharge events in a computer system
US11024525B2 (en) 2017-06-12 2021-06-01 Analog Devices International Unlimited Company Diffusion temperature shock monitor
JP7310344B2 (ja) * 2019-06-17 2023-07-19 株式会社デンソー 信号検出回路
US20230051899A1 (en) * 2021-08-11 2023-02-16 Intel Corporation Voltage detector for supply ramp down sequence

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2782854B2 (ja) * 1989-10-27 1998-08-06 富士電機株式会社 燃料電池の保護装置
US5063304A (en) * 1990-04-27 1991-11-05 Texas Instruments Incorporated Integrated circuit with improved on-chip power supply control
US5299203A (en) * 1990-08-17 1994-03-29 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with a flag for indicating test mode
US5428252A (en) * 1992-01-03 1995-06-27 Zilog, Inc. Power supply interruption detection and response system for a microcontroller
JPH05325580A (ja) * 1992-05-28 1993-12-10 Mitsubishi Electric Corp 不揮発性メモリ
US5629890A (en) * 1994-09-14 1997-05-13 Information Storage Devices, Inc. Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method
JPH0969295A (ja) * 1995-08-31 1997-03-11 Sanyo Electric Co Ltd 不揮発性多値メモリ装置
US5712575A (en) * 1995-12-18 1998-01-27 Micron Technology, Inc. Super-voltage circuit with a fast reset
JP3609185B2 (ja) * 1996-01-30 2005-01-12 沖電気工業株式会社 信号発生回路及びこれを用いたテストモード設定方法
KR100190080B1 (ko) * 1996-08-20 1999-06-01 윤종용 반도체 메모리 장치의 메모리 셀 테스트용 고전압 감지 회로
US5943263A (en) * 1997-01-08 1999-08-24 Micron Technology, Inc. Apparatus and method for programming voltage protection in a non-volatile memory system

Also Published As

Publication number Publication date
US6411544B1 (en) 2002-06-25
FR2794867A1 (fr) 2000-12-15

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090228