DE69227432T2 - Spannungsgenerator für eine Speicher-Anordnung - Google Patents

Spannungsgenerator für eine Speicher-Anordnung

Info

Publication number
DE69227432T2
DE69227432T2 DE69227432T DE69227432T DE69227432T2 DE 69227432 T2 DE69227432 T2 DE 69227432T2 DE 69227432 T DE69227432 T DE 69227432T DE 69227432 T DE69227432 T DE 69227432T DE 69227432 T2 DE69227432 T2 DE 69227432T2
Authority
DE
Germany
Prior art keywords
voltage generator
memory arrangement
memory
arrangement
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69227432T
Other languages
English (en)
Other versions
DE69227432D1 (de
Inventor
Sang H Dhong
Hyun J Shin
Wei Hwang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69227432D1 publication Critical patent/DE69227432D1/de
Publication of DE69227432T2 publication Critical patent/DE69227432T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
DE69227432T 1991-10-03 1992-08-01 Spannungsgenerator für eine Speicher-Anordnung Expired - Fee Related DE69227432T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/771,295 US5268871A (en) 1991-10-03 1991-10-03 Power supply tracking regulator for a memory array

Publications (2)

Publication Number Publication Date
DE69227432D1 DE69227432D1 (de) 1998-12-03
DE69227432T2 true DE69227432T2 (de) 1999-06-02

Family

ID=25091362

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69227432T Expired - Fee Related DE69227432T2 (de) 1991-10-03 1992-08-01 Spannungsgenerator für eine Speicher-Anordnung

Country Status (4)

Country Link
US (3) US5268871A (de)
EP (1) EP0535325B1 (de)
JP (1) JP2596677B2 (de)
DE (1) DE69227432T2 (de)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0559996B1 (de) * 1992-03-12 1997-09-10 STMicroelectronics S.r.l. Treiber, insbesondere für Leistungs-MOS-Halbbrücken
JP2831914B2 (ja) * 1992-09-30 1998-12-02 株式会社東芝 半導体集積回路装置
JP2768172B2 (ja) * 1992-09-30 1998-06-25 日本電気株式会社 半導体メモリ装置
US5384739A (en) * 1993-06-10 1995-01-24 Micron Semiconductor, Inc. Summing circuit with biased inputs and an unbiased output
DE4324853C1 (de) * 1993-07-23 1994-09-22 Siemens Ag Spannungserzeugungsschaltung
JPH07130175A (ja) * 1993-09-10 1995-05-19 Toshiba Corp 半導体記憶装置
KR970010284B1 (en) * 1993-12-18 1997-06-23 Samsung Electronics Co Ltd Internal voltage generator of semiconductor integrated circuit
FR2718273B1 (fr) * 1994-03-31 1996-05-24 Sgs Thomson Microelectronics Mémoire intégrée avec circuit de maintien de la tension de colonne.
US5594697A (en) * 1994-06-28 1997-01-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US5625316A (en) * 1994-07-01 1997-04-29 Motorola, Inc. Tuning circuit for an RC filter
US5784475A (en) * 1994-11-21 1998-07-21 United Microelectronics Corporation Stable sound synthesizing circuit
US5537077A (en) * 1994-12-23 1996-07-16 Advanced Micro Devices, Inc. Power supply dependent method of controlling a charge pump
JP3523718B2 (ja) * 1995-02-06 2004-04-26 株式会社ルネサステクノロジ 半導体装置
JPH08335122A (ja) * 1995-04-05 1996-12-17 Seiko Instr Inc 基準電圧用半導体装置
EP0741390A3 (de) * 1995-05-01 1997-07-23 Ibm Referenzspannungsgenerator zum Korrigieren der Schwellspannung
US5731736A (en) * 1995-06-30 1998-03-24 Dallas Semiconductor Charge pump for digital potentiometers
US5973956A (en) * 1995-07-31 1999-10-26 Information Storage Devices, Inc. Non-volatile electrically alterable semiconductor memory for analog and digital storage
US5596532A (en) * 1995-10-18 1997-01-21 Sandisk Corporation Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range
US5774013A (en) * 1995-11-30 1998-06-30 Rockwell Semiconductor Systems, Inc. Dual source for constant and PTAT current
US5721485A (en) * 1996-01-04 1998-02-24 Ibm Corporation High performance on-chip voltage regulator designs
US5642310A (en) * 1996-02-02 1997-06-24 Integrated Silicon Solution Inc. System and method for controlling source current and voltage during flash memory erase operations
US5703827A (en) * 1996-02-29 1997-12-30 Monolithic System Technology, Inc. Method and structure for generating a boosted word line voltage and a back bias voltage for a memory array
US5748030A (en) * 1996-08-19 1998-05-05 Motorola, Inc. Bias generator providing process and temperature invariant MOSFET transconductance
US5852376A (en) * 1996-08-23 1998-12-22 Ramtron International Corporation Bandgap reference based power-on detect circuit including a supression circuit
US5805507A (en) * 1996-10-01 1998-09-08 Microchip Technology Incorporated Voltage reference generator for EPROM memory array
US5726563A (en) * 1996-11-12 1998-03-10 Motorola, Inc. Supply tracking temperature independent reference voltage generator
US5923211A (en) * 1997-05-21 1999-07-13 Advanced Micro Devices, Inc. Reference voltage generation scheme for gate oxide protected circuits
US5898634A (en) * 1997-06-17 1999-04-27 Micron Technology, Inc. Integrated circuit with supply voltage detector
US5956289A (en) * 1997-06-17 1999-09-21 Micron Technology, Inc. Clock signal from an adjustable oscillator for an integrated circuit
FR2770004B1 (fr) * 1997-10-20 2000-01-28 Sgs Thomson Microelectronics Generateur de courant constant precis
US6215708B1 (en) * 1998-09-30 2001-04-10 Integrated Device Technology, Inc. Charge pump for improving memory cell low VCC performance without increasing gate oxide thickness
KR100554135B1 (ko) * 1998-12-30 2006-05-16 주식회사 하이닉스반도체 워드라인 부트스트랩 회로
IT1306964B1 (it) * 1999-01-19 2001-10-11 St Microelectronics Srl Circuito a boosting capacitivo per la regolazione della tensione dilettura di riga in memorie non-volatili
FR2789190B1 (fr) * 1999-01-28 2001-06-01 St Microelectronics Sa Alimentation regulee a fort taux de rejection du bruit d'une tension d'alimentation
US6943618B1 (en) * 1999-05-13 2005-09-13 Honeywell International Inc. Compensation mechanism for compensating bias levels of an operation circuit in response to supply voltage changes
US6236236B1 (en) * 1999-06-02 2001-05-22 National Semiconductor Corporation 2.5 volt input/output buffer circuit tolerant to 3.3 and 5 volts
US6430087B1 (en) * 2000-02-28 2002-08-06 Advanced Micro Devices, Inc. Trimming method and system for wordline booster to minimize process variation of boosted wordline voltage
US6380794B1 (en) * 2000-03-24 2002-04-30 Sige Microsystems Inc. Hybrid circuit having current source controlled by a comparator
US6292406B1 (en) * 2000-07-03 2001-09-18 Advanced Micro Devices, Inc. Method and low-power circuits used to generate accurate boosted wordline voltage for flash memory core cells in read mode
US6583661B1 (en) 2000-11-03 2003-06-24 Honeywell Inc. Compensation mechanism for compensating bias levels of an operation circuit in response to supply voltage changes
US6559629B1 (en) 2001-07-09 2003-05-06 Cygnal Integrated Products, Inc. Supply voltage monitor using bandgap device without feedback
US6445623B1 (en) * 2001-08-22 2002-09-03 Texas Instruments Incorporated Charge pumps with current sources for regulation
JP2003202925A (ja) * 2001-11-26 2003-07-18 Em Microelectronic Marin Sa 高電圧用途のための定電流源回路
US6580261B1 (en) * 2002-05-08 2003-06-17 National Semiconductor Corporation Low current open loop voltage regulator monitor
KR100452320B1 (ko) * 2002-06-08 2004-10-12 삼성전자주식회사 복수개의 피드백 루프로 이루어진 어레이 전압 제어회로를갖는 반도체 메모리 장치
EP1537671B1 (de) * 2002-09-11 2008-02-13 Atmel Corporation Auf einem dac basierender spannungsregler für ein flash-speicherarray
US6771200B2 (en) * 2003-04-03 2004-08-03 Atmel Corporation DAC-based voltage regulator for flash memory array
US7498657B2 (en) * 2002-10-10 2009-03-03 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical resistors and band-gap voltage reference circuits
US6996730B2 (en) * 2002-11-25 2006-02-07 Texas Instruments Incorporated Adjusting voltage supplied to a processor in response to clock frequency
US6868024B2 (en) * 2002-12-26 2005-03-15 Micron Technology, Inc. Low voltage sense amplifier for operation under a reduced bit line bias voltage
US6933769B2 (en) * 2003-08-26 2005-08-23 Micron Technology, Inc. Bandgap reference circuit
JP4150326B2 (ja) * 2003-11-12 2008-09-17 株式会社リコー 定電圧回路
US7649402B1 (en) * 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7145315B2 (en) * 2004-09-21 2006-12-05 Broadcom Corporation Over-current detection circuit in a switch regulator
US7046566B1 (en) * 2004-12-06 2006-05-16 Altera Corporation Voltage-based timing control of memory bit lines
US7655003B2 (en) 2005-06-22 2010-02-02 Smith & Nephew, Inc. Electrosurgical power control
US7256643B2 (en) * 2005-08-04 2007-08-14 Micron Technology, Inc. Device and method for generating a low-voltage reference
US7457092B2 (en) * 2005-12-07 2008-11-25 Alpha & Omega Semiconductor, Lld. Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
EP1876600B1 (de) * 2006-07-06 2009-09-09 STMicroelectronics S.r.l. Integrierte Steuerschaltung einer Ladungspumpe
US7365585B2 (en) * 2006-08-09 2008-04-29 Atmel Corporation Apparatus and method for charge pump slew rate control
US8092735B2 (en) * 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
US8237492B2 (en) * 2006-12-06 2012-08-07 Broadcom Corporation Method and system for a process sensor to compensate SOC parameters in the presence of IC process manufacturing variations
US8169081B1 (en) 2007-12-27 2012-05-01 Volterra Semiconductor Corporation Conductive routings in integrated circuits using under bump metallization
CN102034528B (zh) * 2010-09-26 2013-08-07 钰创科技股份有限公司 自我提供输入参考电压的系统封装集成电路
US8908439B2 (en) * 2012-09-07 2014-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adaptive word-line boost driver
US10459502B2 (en) * 2016-10-21 2019-10-29 Seagate Technology Llc Adaptive charge leveling in a data storage device
US10673321B2 (en) 2017-11-27 2020-06-02 Marvell Asia Pte., Ltd. Charge pump circuit with built-in-retry
US10530308B2 (en) * 2018-03-23 2020-01-07 Texas Instruments Incorporated Offset drift compensation

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099264A (en) * 1976-10-28 1978-07-04 Sperry Rand Corporation Non-destructive interrogation control circuit for a variable threshold FET memory
JPS56117390A (en) * 1980-02-16 1981-09-14 Fujitsu Ltd Semiconductor memory device
US4739191A (en) * 1981-04-27 1988-04-19 Signetics Corporation Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage
US4581564A (en) * 1983-04-20 1986-04-08 Smiths Industries, Inc. Multi-mode horizontal deflection system
US4638464A (en) * 1983-11-14 1987-01-20 International Business Machines Corp. Charge pump system for non-volatile ram
US4536720A (en) * 1983-11-14 1985-08-20 International Business Machines Corporation Programmable oscillator with power down feature and frequency adjustment
US4670861A (en) * 1985-06-21 1987-06-02 Advanced Micro Devices, Inc. CMOS N-well bias generator and gating system
JPH0750552B2 (ja) * 1985-12-20 1995-05-31 三菱電機株式会社 内部電位発生回路
DE3771981D1 (de) * 1986-09-24 1991-09-12 Siemens Ag Stromspiegel-schaltungsanordnung.
DE8714849U1 (de) * 1986-12-23 1987-12-23 Jenoptik Jena Gmbh, Ddr 6900 Jena, Dd
JPS63279491A (ja) * 1987-05-12 1988-11-16 Mitsubishi Electric Corp 半導体ダイナミツクｒａｍ
US4825142A (en) * 1987-06-01 1989-04-25 Texas Instruments Incorporated CMOS substrate charge pump voltage regulator
US4883976A (en) * 1987-12-02 1989-11-28 Xicor, Inc. Low power dual-mode CMOS bias voltage generator
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits
US4906863A (en) * 1988-02-29 1990-03-06 Texas Instruments Incorporated Wide range power supply BiCMOS band-gap reference voltage circuit
JPH0817033B2 (ja) * 1988-12-08 1996-02-21 三菱電機株式会社 基板バイアス電位発生回路
IT1228034B (it) * 1988-12-16 1991-05-27 Sgs Thomson Microelectronics Circuito generatore di corrente a specchi complementari di corrente
JPH02168494A (ja) * 1988-12-21 1990-06-28 Nec Corp 半導体記憶回路
JPH0337892A (ja) * 1989-07-04 1991-02-19 Fujitsu Ltd 半導体メモリ装置
JP2568442B2 (ja) * 1989-07-14 1997-01-08 セイコー電子工業株式会社 半導体集積回路装置
US4943737A (en) * 1989-10-13 1990-07-24 Advanced Micro Devices, Inc. BICMOS regulator which controls MOS transistor current
JP2715642B2 (ja) * 1990-08-22 1998-02-18 日本電気株式会社 半導体集積回路
JP2689708B2 (ja) * 1990-09-18 1997-12-10 日本モトローラ株式会社 バイアス電流制御回路
US5109187A (en) * 1990-09-28 1992-04-28 Intel Corporation CMOS voltage reference
US5047707A (en) * 1990-11-19 1991-09-10 Motorola, Inc. Voltage regulator and method for submicron CMOS circuits
US5154260A (en) * 1991-04-08 1992-10-13 Ncr Corporation Method and system for automated processing of articles
JP3173053B2 (ja) * 1991-09-03 2001-06-04 株式会社日立製作所 半導体装置
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control

Also Published As

Publication number Publication date
US5359552A (en) 1994-10-25
EP0535325A2 (de) 1993-04-07
JP2596677B2 (ja) 1997-04-02
JPH05198176A (ja) 1993-08-06
EP0535325B1 (de) 1998-10-28
DE69227432D1 (de) 1998-12-03
EP0535325A3 (en) 1995-01-18
US5268871A (en) 1993-12-07
US5453953A (en) 1995-09-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee