DE60100723D1 - Integrierte Halbleiterschaltung mit niedrigem Leistungsverbrauch - Google Patents

Integrierte Halbleiterschaltung mit niedrigem Leistungsverbrauch

Info

Publication number
DE60100723D1
DE60100723D1 DE60100723T DE60100723T DE60100723D1 DE 60100723 D1 DE60100723 D1 DE 60100723D1 DE 60100723 T DE60100723 T DE 60100723T DE 60100723 T DE60100723 T DE 60100723T DE 60100723 D1 DE60100723 D1 DE 60100723D1
Authority
DE
Germany
Prior art keywords
power consumption
low power
semiconductor circuit
integrated semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60100723T
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English (en)
Other versions
DE60100723T2 (de
Inventor
Hideto Hidaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE60100723D1 publication Critical patent/DE60100723D1/de
Publication of DE60100723T2 publication Critical patent/DE60100723T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
DE60100723T 2000-06-05 2001-02-12 Integrierte Halbleiterschaltung mit niedrigem Leistungsverbrauch Expired - Fee Related DE60100723T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000167189 2000-06-05
JP2000167189 2000-06-05
JP2000261703A JP2002064150A (ja) 2000-06-05 2000-08-30 半導体装置
JP2000261703 2000-08-30

Publications (2)

Publication Number Publication Date
DE60100723D1 true DE60100723D1 (de) 2003-10-16
DE60100723T2 DE60100723T2 (de) 2004-07-15

Family

ID=26593294

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60100723T Expired - Fee Related DE60100723T2 (de) 2000-06-05 2001-02-12 Integrierte Halbleiterschaltung mit niedrigem Leistungsverbrauch

Country Status (6)

Country Link
US (4) US6635934B2 (de)
EP (2) EP1351392A1 (de)
JP (1) JP2002064150A (de)
KR (1) KR100406811B1 (de)
DE (1) DE60100723T2 (de)
TW (1) TW495983B (de)

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* Cited by examiner, † Cited by third party
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EP1162744A1 (de) 2001-12-12
EP1351392A1 (de) 2003-10-08
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TW495983B (en) 2002-07-21
US20090179692A1 (en) 2009-07-16
US6911703B2 (en) 2005-06-28
JP2002064150A (ja) 2002-02-28
US20050212560A1 (en) 2005-09-29
EP1162744B1 (de) 2003-09-10
US7521762B2 (en) 2009-04-21
US20040071026A1 (en) 2004-04-15

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