DE60133851D1 - Leistungshalbleiterbauelement mit Schutzschaltkreis - Google Patents

Leistungshalbleiterbauelement mit Schutzschaltkreis

Info

Publication number
DE60133851D1
DE60133851D1 DE60133851T DE60133851T DE60133851D1 DE 60133851 D1 DE60133851 D1 DE 60133851D1 DE 60133851 T DE60133851 T DE 60133851T DE 60133851 T DE60133851 T DE 60133851T DE 60133851 D1 DE60133851 D1 DE 60133851D1
Authority
DE
Germany
Prior art keywords
protection circuit
power semiconductor
semiconductor component
component
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60133851T
Other languages
English (en)
Inventor
Tatsuo Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60133851D1 publication Critical patent/DE60133851D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
DE60133851T 2000-03-24 2001-03-23 Leistungshalbleiterbauelement mit Schutzschaltkreis Expired - Lifetime DE60133851D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000085422A JP2001274402A (ja) 2000-03-24 2000-03-24 パワー半導体装置

Publications (1)

Publication Number Publication Date
DE60133851D1 true DE60133851D1 (de) 2008-06-19

Family

ID=18601762

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60133851T Expired - Lifetime DE60133851D1 (de) 2000-03-24 2001-03-23 Leistungshalbleiterbauelement mit Schutzschaltkreis

Country Status (7)

Country Link
US (1) US6507088B2 (de)
EP (1) EP1137068B1 (de)
JP (1) JP2001274402A (de)
KR (1) KR100362218B1 (de)
CN (1) CN1162910C (de)
DE (1) DE60133851D1 (de)
TW (1) TW478027B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4946123B2 (ja) * 2006-03-27 2012-06-06 セイコーエプソン株式会社 半導体装置、電気光学装置および電子機器
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
CN102007660B (zh) * 2008-04-16 2014-07-09 柏恩氏股份有限公司 限流电涌保护装置
US8068322B2 (en) * 2008-07-31 2011-11-29 Honeywell International Inc. Electronic circuit breaker apparatus and systems
CN101814527A (zh) * 2010-04-22 2010-08-25 复旦大学 一种使用光电子注入进行电导调制的功率器件与方法
CN102158228A (zh) * 2011-04-19 2011-08-17 复旦大学 极低电压毫米波注入锁定二分频器
JP5959162B2 (ja) * 2011-06-09 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2013065759A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体装置
JP6056299B2 (ja) * 2012-09-13 2017-01-11 富士電機株式会社 半導体装置とワイヤオープン不良の検出方法
US8816725B2 (en) * 2012-12-31 2014-08-26 Nxp B.V. High-voltage electrical switch by series connected semiconductor switches
JP2014216573A (ja) 2013-04-26 2014-11-17 株式会社東芝 半導体装置
JP6218462B2 (ja) * 2013-07-04 2017-10-25 三菱電機株式会社 ワイドギャップ半導体装置
US10468485B2 (en) 2017-05-26 2019-11-05 Allegro Microsystems, Llc Metal-oxide semiconductor (MOS) device structure based on a poly-filled trench isolation region
JP7295047B2 (ja) * 2020-01-22 2023-06-20 株式会社東芝 半導体装置
CN112383293A (zh) * 2020-11-30 2021-02-19 上海维安半导体有限公司 一种智能低边功率开关的控制电路及芯片

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764234A1 (de) * 1968-04-27 1971-07-01 Bosch Gmbh Robert Monolithische Halbleiteranordnung mit integrierten Leistungstransistoren,insbesondere als Spannungsregler fuer Fahrzeuglichtmaschinen
US4404477A (en) * 1978-02-22 1983-09-13 Supertex, Inc. Detection circuit and structure therefor
EP0090280A3 (de) * 1982-03-25 1986-03-19 Nissan Motor Co., Ltd. Integrierte Halbleiterschaltung und Herstellungsverfahren
JPH0666472B2 (ja) * 1987-06-22 1994-08-24 日産自動車株式会社 過電流保護機能を備えたｍｏｓｆｅｔ
JPH0749805Y2 (ja) * 1988-06-30 1995-11-13 関西日本電気株式会社 半導体装置
IT1226557B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito di controllo della tensione di bloccaggio di un carico induttivo pilotato con un dispositivo di potenza in configurazione "high side driver"
US5172290A (en) 1988-08-10 1992-12-15 Siemens Aktiengesellschaft Gate-source protective circuit for a power mosfet
US5079608A (en) * 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
DE4120394A1 (de) * 1991-06-20 1992-12-24 Bosch Gmbh Robert Monolithisch integrierte schaltungsanordnung
JP2777307B2 (ja) * 1992-04-28 1998-07-16 株式会社東芝 短絡保護回路
JP3161092B2 (ja) * 1992-11-05 2001-04-25 富士電機株式会社 デュアルゲートｍｏｓサイリスタ
DE69420327T2 (de) * 1993-06-22 2000-03-30 Koninkl Philips Electronics Nv Halbleiter-Leistungsschaltung
JPH07183781A (ja) * 1993-12-22 1995-07-21 Fuji Electric Co Ltd 半導体装置とその駆動装置
JP3193827B2 (ja) * 1994-04-28 2001-07-30 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
GB9423076D0 (en) 1994-10-12 1995-01-04 Philips Electronics Uk Ltd A protected switch
JPH0918001A (ja) 1995-06-26 1997-01-17 Ricoh Co Ltd 縦型パワーｍｏｓｆｅｔとその製造方法
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
EP0766395A3 (de) * 1995-09-27 1999-04-21 Siemens Aktiengesellschaft Leistungstransistor mit Kurzschlussschutz
US5726594A (en) * 1995-10-02 1998-03-10 Siliconix Incorporated Switching device including power MOSFET with internal power supply circuit
JP3036423B2 (ja) * 1996-02-06 2000-04-24 日本電気株式会社 半導体装置
US6127746A (en) * 1996-10-21 2000-10-03 International Rectifier Corp. Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor
JP4156717B2 (ja) * 1998-01-13 2008-09-24 三菱電機株式会社 半導体装置
JP2982785B2 (ja) * 1998-04-03 1999-11-29 富士電機株式会社 デプレッション型ｍｏｓ半導体素子およびｍｏｓパワーｉｃ

Also Published As

Publication number Publication date
EP1137068B1 (de) 2008-05-07
JP2001274402A (ja) 2001-10-05
EP1137068A2 (de) 2001-09-26
US20010023967A1 (en) 2001-09-27
TW478027B (en) 2002-03-01
CN1162910C (zh) 2004-08-18
EP1137068A3 (de) 2006-06-28
CN1315746A (zh) 2001-10-03
KR100362218B1 (ko) 2002-11-23
US6507088B2 (en) 2003-01-14
KR20010093047A (ko) 2001-10-27

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Legal Events

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