CN1288490C - 液晶显示装置用基板和使用它的液晶显示装置 - Google Patents
液晶显示装置用基板和使用它的液晶显示装置 Download PDFInfo
- Publication number
- CN1288490C CN1288490C CNB2004100031877A CN200410003187A CN1288490C CN 1288490 C CN1288490 C CN 1288490C CN B2004100031877 A CNB2004100031877 A CN B2004100031877A CN 200410003187 A CN200410003187 A CN 200410003187A CN 1288490 C CN1288490 C CN 1288490C
- Authority
- CN
- China
- Prior art keywords
- layer
- liquid crystal
- resin
- contact hole
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 140
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 90
- 239000011347 resin Substances 0.000 claims abstract description 120
- 229920005989 resin Polymers 0.000 claims abstract description 120
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 125000004429 atom Chemical group 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 238000002161 passivation Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 149
- 230000015572 biosynthetic process Effects 0.000 description 68
- 238000005755 formation reaction Methods 0.000 description 68
- 239000003990 capacitor Substances 0.000 description 45
- 238000003860 storage Methods 0.000 description 45
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 41
- 238000000034 method Methods 0.000 description 39
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 20
- 238000010586 diagram Methods 0.000 description 20
- 239000000203 mixture Substances 0.000 description 18
- 238000001459 lithography Methods 0.000 description 16
- 239000010936 titanium Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910001069 Ti alloy Inorganic materials 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052752 metalloid Inorganic materials 0.000 description 4
- 150000002738 metalloids Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000049 pigment Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 2
- -1 acryl Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009415 formwork Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- WNJSKZBEWNVKGU-UHFFFAOYSA-N 2,2-dimethoxyethylbenzene Chemical compound COC(OC)CC1=CC=CC=C1 WNJSKZBEWNVKGU-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical class OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000001055 blue pigment Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000001054 red pigment Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YEIGUXGHHKAURB-UHFFFAOYSA-N viridine Natural products O=C1C2=C3CCC(=O)C3=CC=C2C2(C)C(O)C(OC)C(=O)C3=COC1=C23 YEIGUXGHHKAURB-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
- F16K31/0644—One-way valve
- F16K31/0668—Sliding valves
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K25/00—Details relating to contact between valve members and seats
- F16K25/02—Arrangements using fluid issuing from valve members or seats
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K47/00—Means in valves for absorbing fluid energy
- F16K47/02—Means in valves for absorbing fluid energy for preventing water-hammer or noise
- F16K47/023—Means in valves for absorbing fluid energy for preventing water-hammer or noise for preventing water-hammer, e.g. damping of the valve movement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003090834 | 2003-03-28 | ||
JP090834/2003 | 2003-03-28 | ||
JP2003369354A JP4417072B2 (ja) | 2003-03-28 | 2003-10-29 | 液晶表示装置用基板及びそれを用いた液晶表示装置 |
JP369354/2003 | 2003-10-29 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200610144553XA Division CN100458516C (zh) | 2003-03-28 | 2004-02-26 | 液晶显示装置用基板和使用它的液晶显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1534362A CN1534362A (zh) | 2004-10-06 |
CN1288490C true CN1288490C (zh) | 2006-12-06 |
Family
ID=33478494
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200610144553XA Expired - Lifetime CN100458516C (zh) | 2003-03-28 | 2004-02-26 | 液晶显示装置用基板和使用它的液晶显示装置 |
CNB2004100031877A Expired - Lifetime CN1288490C (zh) | 2003-03-28 | 2004-02-26 | 液晶显示装置用基板和使用它的液晶显示装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200610144553XA Expired - Lifetime CN100458516C (zh) | 2003-03-28 | 2004-02-26 | 液晶显示装置用基板和使用它的液晶显示装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7012658B2 (zh) |
JP (2) | JP4417072B2 (zh) |
KR (1) | KR100814183B1 (zh) |
CN (2) | CN100458516C (zh) |
TW (1) | TWI249643B (zh) |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100816333B1 (ko) * | 2001-08-30 | 2008-03-24 | 삼성전자주식회사 | 액정 표시 장치용 색 필터 기판 및 박막 트랜지스터 기판및 이들의 제조 방법 |
KR101121211B1 (ko) * | 2004-02-17 | 2012-03-23 | 치 메이 옵토일렉트로닉스 코포레이션 | Lcd 장치, 컬러 필터 기판, 및 돌출 구조체, 및 이들의제조방법 |
JP2006171610A (ja) * | 2004-12-20 | 2006-06-29 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置及びその製造方法 |
KR100726090B1 (ko) * | 2004-12-30 | 2007-06-08 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100661725B1 (ko) * | 2004-12-30 | 2006-12-26 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR20060082105A (ko) * | 2005-01-11 | 2006-07-14 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
US8040444B2 (en) * | 2005-06-03 | 2011-10-18 | Samsung Electronics Co., Ltd. | Display device, method of manufacturing the same and mask for manufacturing the same |
KR101189275B1 (ko) * | 2005-08-26 | 2012-10-09 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101189152B1 (ko) * | 2005-09-16 | 2012-10-10 | 삼성디스플레이 주식회사 | 어레이 기판과, 이를 구비한 액정표시패널 및 액정표시장치 |
EP1998374A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
JP5234301B2 (ja) * | 2005-10-03 | 2013-07-10 | Nltテクノロジー株式会社 | 薄膜トランジスタ、薄膜トランジスタアレイ基板、液晶表示装置およびそれらの製造方法 |
KR101112655B1 (ko) * | 2005-11-15 | 2012-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액티브 매트릭스 디스플레이 장치 및 텔레비전 수신기 |
JP2007171334A (ja) * | 2005-12-20 | 2007-07-05 | Toppan Printing Co Ltd | カラーフィルタ用フォトマスク、カラーフィルタの製造方法、カラーフィルタ、及び液晶表示装置 |
JP2007171330A (ja) * | 2005-12-20 | 2007-07-05 | Toppan Printing Co Ltd | カラーフィルタ用フォトマスク及びそれを用いたカラーフィルタ及びその製造方法及び液晶表示素子 |
JP4992363B2 (ja) * | 2006-09-25 | 2012-08-08 | 凸版印刷株式会社 | 硬化パターンの製造方法 |
JP4940926B2 (ja) * | 2006-12-14 | 2012-05-30 | ソニー株式会社 | 液晶表示装置及びその製造方法 |
JP5258277B2 (ja) * | 2006-12-26 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP4400636B2 (ja) * | 2007-03-01 | 2010-01-20 | 株式会社豊田中央研究所 | バリア膜及びバリア膜の製造方法 |
KR20080086730A (ko) * | 2007-03-23 | 2008-09-26 | 삼성전자주식회사 | 표시 기판 및 이를 갖는 표시 장치 |
WO2009028624A1 (ja) | 2007-08-31 | 2009-03-05 | Sharp Kabushiki Kaisha | 液晶表示装置および電子機器 |
KR101461123B1 (ko) * | 2008-05-08 | 2014-11-14 | 삼성디스플레이 주식회사 | 표시 기판의 제조 방법 및 이를 포함하는 표시 장치의 제조방법 |
US9041202B2 (en) * | 2008-05-16 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US7947985B2 (en) * | 2008-06-13 | 2011-05-24 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate and manufacturing method thereof |
US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
KR101542399B1 (ko) | 2008-08-26 | 2015-08-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
US8345177B2 (en) * | 2009-02-13 | 2013-01-01 | Shih Chang Chang | Via design for use in displays |
US8329578B2 (en) * | 2009-03-27 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via structure and via etching process of forming the same |
CN102317841A (zh) * | 2009-05-13 | 2012-01-11 | 夏普株式会社 | 液晶显示面板和液晶显示装置 |
KR101810699B1 (ko) * | 2009-06-30 | 2018-01-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
JP2011077450A (ja) * | 2009-10-01 | 2011-04-14 | Fujifilm Corp | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
KR101682092B1 (ko) | 2009-11-12 | 2016-12-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 |
US8804081B2 (en) | 2009-12-18 | 2014-08-12 | Samsung Display Co., Ltd. | Liquid crystal display device with electrode having opening over thin film transistor |
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-
2003
- 2003-10-29 JP JP2003369354A patent/JP4417072B2/ja not_active Expired - Lifetime
-
2004
- 2004-01-28 US US10/767,226 patent/US7012658B2/en not_active Expired - Lifetime
- 2004-01-29 TW TW093101989A patent/TWI249643B/zh not_active IP Right Cessation
- 2004-02-26 CN CNB200610144553XA patent/CN100458516C/zh not_active Expired - Lifetime
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- 2004-03-23 KR KR1020040019633A patent/KR100814183B1/ko not_active IP Right Cessation
-
2006
- 2006-01-05 US US11/326,276 patent/US7268842B2/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
KR100814183B1 (ko) | 2008-03-14 |
CN1955804A (zh) | 2007-05-02 |
US7268842B2 (en) | 2007-09-11 |
US20040246424A1 (en) | 2004-12-09 |
JP4417072B2 (ja) | 2010-02-17 |
TW200424727A (en) | 2004-11-16 |
KR20040084720A (ko) | 2004-10-06 |
JP2004318063A (ja) | 2004-11-11 |
TWI249643B (en) | 2006-02-21 |
CN1534362A (zh) | 2004-10-06 |
JP2009276788A (ja) | 2009-11-26 |
JP5101580B2 (ja) | 2012-12-19 |
US7012658B2 (en) | 2006-03-14 |
CN100458516C (zh) | 2009-02-04 |
US20060114393A1 (en) | 2006-06-01 |
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