JP2013080160A - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP2013080160A JP2013080160A JP2011221000A JP2011221000A JP2013080160A JP 2013080160 A JP2013080160 A JP 2013080160A JP 2011221000 A JP2011221000 A JP 2011221000A JP 2011221000 A JP2011221000 A JP 2011221000A JP 2013080160 A JP2013080160 A JP 2013080160A
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- upper layer
- scanning line
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- video signal
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- 229910015202 MoCr Inorganic materials 0.000 claims abstract description 47
- 229910016570 AlCu Inorganic materials 0.000 claims abstract description 41
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 abstract description 17
- 230000009471 action Effects 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 158
- 239000010408 film Substances 0.000 description 50
- 239000004973 liquid crystal related substance Substances 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 230000037303 wrinkles Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G1/00—Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators; General aspects or details, e.g. selection emphasis on particular characters, dashed line or dotted line generation; Preprocessing of data
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Abstract
【解決手段】映像信号線が絶縁膜を介して走査線を乗り越える構成となっている。走査線10はAlCu合金を下層11とし、MoCr合金を上層12とする2層構造である。上層/下層の膜厚比を、0.4以上、1.0以下とすることによって、走査線10の断面において、電池作用によって上層12のエッチング速度が遅くなって、上層12の庇部が形成されることを防止する。これによって、走査線10に生じた庇部に起因して、映像信号線が走査線10との交差部において断線することを防止する。
【選択図】図4
Description
図6は上層12であるMoCrの厚さが60nm、下層11であるAlCuの厚さが100nmであり、上層/下層の膜厚比が0.6の場合である。図6において、上層12のMoCrの庇部は観測できないほど小さくなっている。そして、下層11から上層12にかけてのテーパは63度である。図6に示すように、走査線10の上に形成されるゲート絶縁膜102は走査線10の端部においても正常に形成されている。したがって、ゲート絶縁膜102の上に形成される映像信号線20の断線も防止することが出来る。
Claims (4)
- 走査線が第1の方向に延在して第2の方向に配列し、映像信号線が第2の方向に延在して第1の方向に配列し、前記走査線と前記映像信号線とで囲まれた領域にTFTと画素電極が形成されている表示装置であって、
前記TFTはボトムゲートタイプのTFTであり、
前記走査線はAlを主成分とする合金を下層とし、Moを主成分とする合金を上層とする2層構造であり、
前記上層/前記下層の膜厚比は、0.4以上、1.0以下であることを特徴とする表示装置。 - 前記上層/前記下層の膜厚比は、0.6以上、1.0以下であることを特徴とする請求項1に記載の表示装置。
- 前記上層はMoCr合金であり、前記下層はAlCuであることを特徴とする請求項1または2に記載の表示装置。
- 前記上層の膜厚は40nm以上であることを特徴とする請求項3に記載の表示装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011221000A JP2013080160A (ja) | 2011-10-05 | 2011-10-05 | 表示装置 |
TW101133174A TW201316107A (zh) | 2011-10-05 | 2012-09-11 | 顯示裝置 |
CN201210438525.4A CN103034005B (zh) | 2011-10-05 | 2012-09-29 | 显示装置 |
US13/633,151 US9035310B2 (en) | 2011-10-05 | 2012-10-02 | Display device |
KR1020120109866A KR20130037175A (ko) | 2011-10-05 | 2012-10-04 | 표시 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011221000A JP2013080160A (ja) | 2011-10-05 | 2011-10-05 | 表示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013080160A true JP2013080160A (ja) | 2013-05-02 |
Family
ID=48021031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011221000A Pending JP2013080160A (ja) | 2011-10-05 | 2011-10-05 | 表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9035310B2 (ja) |
JP (1) | JP2013080160A (ja) |
KR (1) | KR20130037175A (ja) |
CN (1) | CN103034005B (ja) |
TW (1) | TW201316107A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103489879B (zh) * | 2013-10-11 | 2016-04-20 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
US10152159B2 (en) | 2015-04-01 | 2018-12-11 | Shanghai Tianma Micro-Electronics | Display panel and method for forming an array substrate of a display panel |
CN104699349B (zh) * | 2015-04-01 | 2017-12-05 | 上海天马微电子有限公司 | 一种阵列基板及其制作方法、显示面板 |
CN107293556B (zh) * | 2017-06-20 | 2018-12-07 | 惠科股份有限公司 | 一种显示面板及显示装置 |
KR20210126839A (ko) * | 2020-04-10 | 2021-10-21 | 삼성디스플레이 주식회사 | 표시장치 및 이의 제조방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0964366A (ja) * | 1995-08-23 | 1997-03-07 | Toshiba Corp | 薄膜トランジスタ |
JPH10240150A (ja) * | 1997-02-26 | 1998-09-11 | Samsung Electron Co Ltd | 配線用組成物、この組成物を用いた金属配線およびその製造方法、この配線を用いた表示装置およびその製造方法 |
JP2002341367A (ja) * | 2001-05-18 | 2002-11-27 | Nec Corp | 液晶表示装置及びその製造方法 |
JP2004318063A (ja) * | 2003-03-28 | 2004-11-11 | Fujitsu Display Technologies Corp | 液晶表示装置用基板及びそれを用いた液晶表示装置 |
JP2006178445A (ja) * | 2004-12-20 | 2006-07-06 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板及びその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3283919B2 (ja) | 1992-09-02 | 2002-05-20 | 株式会社東芝 | 薄膜トランジスタの製造方法 |
US6445004B1 (en) * | 1998-02-26 | 2002-09-03 | Samsung Electronics Co., Ltd. | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof |
TWI255957B (en) * | 1999-03-26 | 2006-06-01 | Hitachi Ltd | Liquid crystal display device and method of manufacturing the same |
TWI232991B (en) * | 2002-11-15 | 2005-05-21 | Nec Lcd Technologies Ltd | Method for manufacturing an LCD device |
KR101160829B1 (ko) * | 2005-02-15 | 2012-06-29 | 삼성전자주식회사 | 식각액 조성물 및 박막 트랜지스터 표시판의 제조 방법 |
JP2007294672A (ja) | 2006-04-25 | 2007-11-08 | Mitsubishi Electric Corp | 配線基板、表示装置及びそれらの製造方法 |
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2011
- 2011-10-05 JP JP2011221000A patent/JP2013080160A/ja active Pending
-
2012
- 2012-09-11 TW TW101133174A patent/TW201316107A/zh unknown
- 2012-09-29 CN CN201210438525.4A patent/CN103034005B/zh active Active
- 2012-10-02 US US13/633,151 patent/US9035310B2/en active Active
- 2012-10-04 KR KR1020120109866A patent/KR20130037175A/ko not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0964366A (ja) * | 1995-08-23 | 1997-03-07 | Toshiba Corp | 薄膜トランジスタ |
JPH10240150A (ja) * | 1997-02-26 | 1998-09-11 | Samsung Electron Co Ltd | 配線用組成物、この組成物を用いた金属配線およびその製造方法、この配線を用いた表示装置およびその製造方法 |
JP2002341367A (ja) * | 2001-05-18 | 2002-11-27 | Nec Corp | 液晶表示装置及びその製造方法 |
JP2004318063A (ja) * | 2003-03-28 | 2004-11-11 | Fujitsu Display Technologies Corp | 液晶表示装置用基板及びそれを用いた液晶表示装置 |
JP2006178445A (ja) * | 2004-12-20 | 2006-07-06 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9035310B2 (en) | 2015-05-19 |
US20130099239A1 (en) | 2013-04-25 |
CN103034005B (zh) | 2015-07-22 |
KR20130037175A (ko) | 2013-04-15 |
TW201316107A (zh) | 2013-04-16 |
CN103034005A (zh) | 2013-04-10 |
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