CN1251239C - 能适应多种封装形式的半导体存储装置 - Google Patents

能适应多种封装形式的半导体存储装置 Download PDF

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Publication number
CN1251239C
CN1251239C CNB021251479A CN02125147A CN1251239C CN 1251239 C CN1251239 C CN 1251239C CN B021251479 A CNB021251479 A CN B021251479A CN 02125147 A CN02125147 A CN 02125147A CN 1251239 C CN1251239 C CN 1251239C
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CN
China
Prior art keywords
mentioned
pad
circuit
semiconductor storage
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021251479A
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English (en)
Chinese (zh)
Other versions
CN1416131A (zh
Inventor
诹访真人
神保伸一
田增成
冈本武郎
石田耕三
米谷英树
长泽勉
山内忠昭
松本淳子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1416131A publication Critical patent/CN1416131A/zh
Application granted granted Critical
Publication of CN1251239C publication Critical patent/CN1251239C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
CNB021251479A 2001-10-29 2002-06-28 能适应多种封装形式的半导体存储装置 Expired - Fee Related CN1251239C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP331137/01 2001-10-29
JP2001331137A JP3803050B2 (ja) 2001-10-29 2001-10-29 半導体記憶装置、ダイナミックランダムアクセスメモリおよび半導体装置
JP331137/2001 2001-10-29

Publications (2)

Publication Number Publication Date
CN1416131A CN1416131A (zh) 2003-05-07
CN1251239C true CN1251239C (zh) 2006-04-12

Family

ID=19146759

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021251479A Expired - Fee Related CN1251239C (zh) 2001-10-29 2002-06-28 能适应多种封装形式的半导体存储装置

Country Status (6)

Country Link
US (1) US6625050B2 (https=)
JP (1) JP3803050B2 (https=)
KR (1) KR100485547B1 (https=)
CN (1) CN1251239C (https=)
DE (1) DE10228544A1 (https=)
TW (1) TW559828B (https=)

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US7071783B2 (en) * 2002-07-19 2006-07-04 Micro Mobio Corporation Temperature-compensated power sensing circuit for power amplifiers
US7493094B2 (en) * 2005-01-19 2009-02-17 Micro Mobio Corporation Multi-mode power amplifier module for wireless communication devices
US20040232982A1 (en) * 2002-07-19 2004-11-25 Ikuroh Ichitsubo RF front-end module for wireless communication devices
US6774718B2 (en) * 2002-07-19 2004-08-10 Micro Mobio Inc. Power amplifier module for wireless communication devices
US6975527B1 (en) * 2002-11-12 2005-12-13 Integrated Device Technology, Inc. Memory device layout
DE10313868B4 (de) * 2003-03-21 2009-11-19 Siemens Ag Katheter zur magnetischen Navigation
KR100626367B1 (ko) * 2003-10-02 2006-09-20 삼성전자주식회사 내부전압 발생장치
US20100253435A1 (en) * 2004-03-18 2010-10-07 Ikuroh Ichitsubo Rf power amplifier circuit utilizing bondwires in impedance matching
US20050205986A1 (en) * 2004-03-18 2005-09-22 Ikuroh Ichitsubo Module with integrated active substrate and passive substrate
US7254371B2 (en) * 2004-08-16 2007-08-07 Micro-Mobio, Inc. Multi-port multi-band RF switch
US7389090B1 (en) 2004-10-25 2008-06-17 Micro Mobio, Inc. Diplexer circuit for wireless communication devices
US7262677B2 (en) * 2004-10-25 2007-08-28 Micro-Mobio, Inc. Frequency filtering circuit for wireless communication devices
US7221225B2 (en) 2004-12-03 2007-05-22 Micro-Mobio Dual band power amplifier module for wireless communication devices
US7348842B2 (en) * 2005-01-19 2008-03-25 Micro-Mobio Multi-substrate RF module for wireless communication devices
US7580687B2 (en) 2005-01-19 2009-08-25 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
US7084702B1 (en) * 2005-01-19 2006-08-01 Micro Mobio Corp. Multi-band power amplifier module for wireless communication devices
US7548111B2 (en) * 2005-01-19 2009-06-16 Micro Mobio Corporation Miniature dual band power amplifier with reserved pins
US7119614B2 (en) * 2005-01-19 2006-10-10 Micro-Mobio Multi-band power amplifier module for wireless communications
US7769355B2 (en) * 2005-01-19 2010-08-03 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
US20070063982A1 (en) * 2005-09-19 2007-03-22 Tran Bao Q Integrated rendering of sound and image on a display
KR100681398B1 (ko) * 2005-12-29 2007-02-15 삼성전자주식회사 열방출형 반도체 칩과 테이프 배선기판 및 그를 이용한테이프 패키지
US7477204B2 (en) * 2005-12-30 2009-01-13 Micro-Mobio, Inc. Printed circuit board based smart antenna
US7477108B2 (en) * 2006-07-14 2009-01-13 Micro Mobio, Inc. Thermally distributed integrated power amplifier module
JP2008060215A (ja) * 2006-08-30 2008-03-13 Elpida Memory Inc 半導体装置
JP2008299925A (ja) * 2007-05-30 2008-12-11 Elpida Memory Inc 半導体メモリ
US11036262B1 (en) 2008-01-14 2021-06-15 Micro Mobio Corporation Radio frequency power amplifier with adjacent channel leakage correction circuit
US9088258B2 (en) * 2008-01-14 2015-07-21 Micro Mobio Corporation RF power amplifier with linearity control
US7741904B2 (en) * 2008-01-14 2010-06-22 Micro Mobio Corporation Efficient integrated linear amplifier module
US20090257208A1 (en) * 2008-04-10 2009-10-15 Zlatko Filipovic Compact packaging for power amplifier module
KR101003116B1 (ko) 2008-08-08 2010-12-21 주식회사 하이닉스반도체 패드를 제어하는 반도체 메모리 장치 및 그 장치가 장착된 멀티칩 패키지
US8253496B2 (en) * 2008-10-31 2012-08-28 Micro Mobio Corporation Linear RF power amplifier with frequency-selectable impedance matching
US7808312B2 (en) * 2008-10-31 2010-10-05 Micro Mobio Corporation Broadband RF linear amplifier
KR20100091640A (ko) * 2009-02-11 2010-08-19 삼성전자주식회사 메모리 장치, 이를 포함하는 메모리 시스템, 및 이들의 데이터 처리 방법
US8219145B2 (en) * 2009-09-03 2012-07-10 Micro Mobio Corporation Universal radio card for wireless devices
JP2011060909A (ja) * 2009-09-08 2011-03-24 Elpida Memory Inc 半導体記憶装置
US8189713B2 (en) * 2010-01-18 2012-05-29 Micro Mobio Corporation Matrix power amplifiers for high speed wireless applications
US10938360B1 (en) 2011-10-26 2021-03-02 Micro Mobio Corporation Multimode multiband wireless device with broadband power amplifier
KR102043369B1 (ko) * 2012-11-21 2019-11-11 삼성전자주식회사 반도체 메모리 칩 및 이를 포함하는 적층형 반도체 패키지
KR20150026644A (ko) * 2013-09-03 2015-03-11 에스케이하이닉스 주식회사 반도체칩, 반도체칩 패키지 및 이를 포함하는 반도체시스템
TWI539565B (zh) * 2014-01-29 2016-06-21 森富科技股份有限公司 記憶體與記憶體球位焊墊之佈局方法
US11515617B1 (en) 2019-04-03 2022-11-29 Micro Mobio Corporation Radio frequency active antenna system in a package
US12463322B1 (en) 2019-04-03 2025-11-04 Micro Mobio Corporation Antenna in display

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JP3009109B2 (ja) 1989-11-07 2000-02-14 富士通株式会社 半導体集積回路
JPH04164340A (ja) * 1990-10-29 1992-06-10 Nec Corp 半導体集積回路
JPH06302644A (ja) * 1993-04-15 1994-10-28 Hitachi Ltd 半導体装置
JP3349777B2 (ja) 1993-07-30 2002-11-25 三菱電機株式会社 半導体記憶装置
JP3239581B2 (ja) 1994-01-26 2001-12-17 富士通株式会社 半導体集積回路の製造方法及び半導体集積回路
JP3494502B2 (ja) * 1995-05-12 2004-02-09 株式会社ルネサステクノロジ 半導体記憶装置およびそのパッド配置方法
KR0164795B1 (ko) * 1995-10-31 1999-02-01 김광호 반도체 장치의 패드 배치구조
KR100238238B1 (ko) 1997-03-31 2000-01-15 윤종용 반도체 메모리장치의 내부 전압 제어회로 및 그 제어방법
KR19990010762A (ko) * 1997-07-18 1999-02-18 윤종용 반도체 소자 패키지
KR100340060B1 (ko) * 1998-06-02 2002-07-18 박종섭 티에스오피와호환성이있는씨에스피핀배치방법및그에의한핀배치구조
GB2348317B (en) * 1998-06-23 2001-03-07 Samsung Electronics Co Ltd An arrangement of data input/output circuits for use in a semiconductor memory device
JP3149867B2 (ja) 1998-12-16 2001-03-26 横河電機株式会社 自動分析装置
JP4446505B2 (ja) 1999-01-19 2010-04-07 株式会社ルネサステクノロジ 半導体集積回路装置
JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置

Also Published As

Publication number Publication date
JP2003133365A (ja) 2003-05-09
US6625050B2 (en) 2003-09-23
KR20030035803A (ko) 2003-05-09
JP3803050B2 (ja) 2006-08-02
US20030081443A1 (en) 2003-05-01
DE10228544A1 (de) 2003-05-15
CN1416131A (zh) 2003-05-07
TW559828B (en) 2003-11-01
KR100485547B1 (ko) 2005-04-28

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Granted publication date: 20060412

Termination date: 20100628