KR100485547B1 - 다양한 패키지에 대응할 수 있는 반도체 기억 장치 - Google Patents

다양한 패키지에 대응할 수 있는 반도체 기억 장치 Download PDF

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Publication number
KR100485547B1
KR100485547B1 KR10-2002-0036823A KR20020036823A KR100485547B1 KR 100485547 B1 KR100485547 B1 KR 100485547B1 KR 20020036823 A KR20020036823 A KR 20020036823A KR 100485547 B1 KR100485547 B1 KR 100485547B1
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KR
South Korea
Prior art keywords
pad
circuit
memory device
semiconductor memory
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-0036823A
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English (en)
Korean (ko)
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KR20030035803A (ko
Inventor
스와마코토
진보신이치
티안젱쳉
오카모토다케오
이시다고조
요네타니히데키
나가사와츠토무
야마우치다다아키
마츠모토쥰코
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20030035803A publication Critical patent/KR20030035803A/ko
Application granted granted Critical
Publication of KR100485547B1 publication Critical patent/KR100485547B1/ko
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
KR10-2002-0036823A 2001-10-29 2002-06-28 다양한 패키지에 대응할 수 있는 반도체 기억 장치 Expired - Fee Related KR100485547B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001331137A JP3803050B2 (ja) 2001-10-29 2001-10-29 半導体記憶装置、ダイナミックランダムアクセスメモリおよび半導体装置
JPJP-P-2001-00331137 2001-10-29

Publications (2)

Publication Number Publication Date
KR20030035803A KR20030035803A (ko) 2003-05-09
KR100485547B1 true KR100485547B1 (ko) 2005-04-28

Family

ID=19146759

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0036823A Expired - Fee Related KR100485547B1 (ko) 2001-10-29 2002-06-28 다양한 패키지에 대응할 수 있는 반도체 기억 장치

Country Status (6)

Country Link
US (1) US6625050B2 (https=)
JP (1) JP3803050B2 (https=)
KR (1) KR100485547B1 (https=)
CN (1) CN1251239C (https=)
DE (1) DE10228544A1 (https=)
TW (1) TW559828B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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US8759968B2 (en) 2008-08-08 2014-06-24 SK Hynix Inc. Semiconductor memory apparatus for controlling pads and multi-chip package having the same

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US7071783B2 (en) * 2002-07-19 2006-07-04 Micro Mobio Corporation Temperature-compensated power sensing circuit for power amplifiers
US7493094B2 (en) * 2005-01-19 2009-02-17 Micro Mobio Corporation Multi-mode power amplifier module for wireless communication devices
US20040232982A1 (en) * 2002-07-19 2004-11-25 Ikuroh Ichitsubo RF front-end module for wireless communication devices
US6774718B2 (en) * 2002-07-19 2004-08-10 Micro Mobio Inc. Power amplifier module for wireless communication devices
US6975527B1 (en) * 2002-11-12 2005-12-13 Integrated Device Technology, Inc. Memory device layout
DE10313868B4 (de) * 2003-03-21 2009-11-19 Siemens Ag Katheter zur magnetischen Navigation
KR100626367B1 (ko) * 2003-10-02 2006-09-20 삼성전자주식회사 내부전압 발생장치
US20100253435A1 (en) * 2004-03-18 2010-10-07 Ikuroh Ichitsubo Rf power amplifier circuit utilizing bondwires in impedance matching
US20050205986A1 (en) * 2004-03-18 2005-09-22 Ikuroh Ichitsubo Module with integrated active substrate and passive substrate
US7254371B2 (en) * 2004-08-16 2007-08-07 Micro-Mobio, Inc. Multi-port multi-band RF switch
US7389090B1 (en) 2004-10-25 2008-06-17 Micro Mobio, Inc. Diplexer circuit for wireless communication devices
US7262677B2 (en) * 2004-10-25 2007-08-28 Micro-Mobio, Inc. Frequency filtering circuit for wireless communication devices
US7221225B2 (en) 2004-12-03 2007-05-22 Micro-Mobio Dual band power amplifier module for wireless communication devices
US7348842B2 (en) * 2005-01-19 2008-03-25 Micro-Mobio Multi-substrate RF module for wireless communication devices
US7580687B2 (en) 2005-01-19 2009-08-25 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
US7084702B1 (en) * 2005-01-19 2006-08-01 Micro Mobio Corp. Multi-band power amplifier module for wireless communication devices
US7548111B2 (en) * 2005-01-19 2009-06-16 Micro Mobio Corporation Miniature dual band power amplifier with reserved pins
US7119614B2 (en) * 2005-01-19 2006-10-10 Micro-Mobio Multi-band power amplifier module for wireless communications
US7769355B2 (en) * 2005-01-19 2010-08-03 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
US20070063982A1 (en) * 2005-09-19 2007-03-22 Tran Bao Q Integrated rendering of sound and image on a display
KR100681398B1 (ko) * 2005-12-29 2007-02-15 삼성전자주식회사 열방출형 반도체 칩과 테이프 배선기판 및 그를 이용한테이프 패키지
US7477204B2 (en) * 2005-12-30 2009-01-13 Micro-Mobio, Inc. Printed circuit board based smart antenna
US7477108B2 (en) * 2006-07-14 2009-01-13 Micro Mobio, Inc. Thermally distributed integrated power amplifier module
JP2008060215A (ja) * 2006-08-30 2008-03-13 Elpida Memory Inc 半導体装置
JP2008299925A (ja) * 2007-05-30 2008-12-11 Elpida Memory Inc 半導体メモリ
US11036262B1 (en) 2008-01-14 2021-06-15 Micro Mobio Corporation Radio frequency power amplifier with adjacent channel leakage correction circuit
US9088258B2 (en) * 2008-01-14 2015-07-21 Micro Mobio Corporation RF power amplifier with linearity control
US7741904B2 (en) * 2008-01-14 2010-06-22 Micro Mobio Corporation Efficient integrated linear amplifier module
US20090257208A1 (en) * 2008-04-10 2009-10-15 Zlatko Filipovic Compact packaging for power amplifier module
US8253496B2 (en) * 2008-10-31 2012-08-28 Micro Mobio Corporation Linear RF power amplifier with frequency-selectable impedance matching
US7808312B2 (en) * 2008-10-31 2010-10-05 Micro Mobio Corporation Broadband RF linear amplifier
KR20100091640A (ko) * 2009-02-11 2010-08-19 삼성전자주식회사 메모리 장치, 이를 포함하는 메모리 시스템, 및 이들의 데이터 처리 방법
US8219145B2 (en) * 2009-09-03 2012-07-10 Micro Mobio Corporation Universal radio card for wireless devices
JP2011060909A (ja) * 2009-09-08 2011-03-24 Elpida Memory Inc 半導体記憶装置
US8189713B2 (en) * 2010-01-18 2012-05-29 Micro Mobio Corporation Matrix power amplifiers for high speed wireless applications
US10938360B1 (en) 2011-10-26 2021-03-02 Micro Mobio Corporation Multimode multiband wireless device with broadband power amplifier
KR102043369B1 (ko) * 2012-11-21 2019-11-11 삼성전자주식회사 반도체 메모리 칩 및 이를 포함하는 적층형 반도체 패키지
KR20150026644A (ko) * 2013-09-03 2015-03-11 에스케이하이닉스 주식회사 반도체칩, 반도체칩 패키지 및 이를 포함하는 반도체시스템
TWI539565B (zh) * 2014-01-29 2016-06-21 森富科技股份有限公司 記憶體與記憶體球位焊墊之佈局方法
US11515617B1 (en) 2019-04-03 2022-11-29 Micro Mobio Corporation Radio frequency active antenna system in a package
US12463322B1 (en) 2019-04-03 2025-11-04 Micro Mobio Corporation Antenna in display

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04164340A (ja) * 1990-10-29 1992-06-10 Nec Corp 半導体集積回路
JPH06302644A (ja) * 1993-04-15 1994-10-28 Hitachi Ltd 半導体装置
KR970023925A (ko) * 1995-10-31 1997-05-30 김광호 반도체 장치의 패드 배치구조
KR19990010762A (ko) * 1997-07-18 1999-02-18 윤종용 반도체 소자 패키지
KR20000000697A (ko) * 1998-06-02 2000-01-15 김영환 동일 다이를 티에스오피와 공용할 수 있게하는씨에스피 핀 배치방법 및 그에 의한 핀 배치구조

Family Cites Families (9)

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JP3009109B2 (ja) 1989-11-07 2000-02-14 富士通株式会社 半導体集積回路
JP3349777B2 (ja) 1993-07-30 2002-11-25 三菱電機株式会社 半導体記憶装置
JP3239581B2 (ja) 1994-01-26 2001-12-17 富士通株式会社 半導体集積回路の製造方法及び半導体集積回路
JP3494502B2 (ja) * 1995-05-12 2004-02-09 株式会社ルネサステクノロジ 半導体記憶装置およびそのパッド配置方法
KR100238238B1 (ko) 1997-03-31 2000-01-15 윤종용 반도체 메모리장치의 내부 전압 제어회로 및 그 제어방법
GB2348317B (en) * 1998-06-23 2001-03-07 Samsung Electronics Co Ltd An arrangement of data input/output circuits for use in a semiconductor memory device
JP3149867B2 (ja) 1998-12-16 2001-03-26 横河電機株式会社 自動分析装置
JP4446505B2 (ja) 1999-01-19 2010-04-07 株式会社ルネサステクノロジ 半導体集積回路装置
JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04164340A (ja) * 1990-10-29 1992-06-10 Nec Corp 半導体集積回路
JPH06302644A (ja) * 1993-04-15 1994-10-28 Hitachi Ltd 半導体装置
KR970023925A (ko) * 1995-10-31 1997-05-30 김광호 반도체 장치의 패드 배치구조
KR19990010762A (ko) * 1997-07-18 1999-02-18 윤종용 반도체 소자 패키지
KR20000000697A (ko) * 1998-06-02 2000-01-15 김영환 동일 다이를 티에스오피와 공용할 수 있게하는씨에스피 핀 배치방법 및 그에 의한 핀 배치구조

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8759968B2 (en) 2008-08-08 2014-06-24 SK Hynix Inc. Semiconductor memory apparatus for controlling pads and multi-chip package having the same

Also Published As

Publication number Publication date
JP2003133365A (ja) 2003-05-09
US6625050B2 (en) 2003-09-23
KR20030035803A (ko) 2003-05-09
JP3803050B2 (ja) 2006-08-02
US20030081443A1 (en) 2003-05-01
CN1251239C (zh) 2006-04-12
DE10228544A1 (de) 2003-05-15
CN1416131A (zh) 2003-05-07
TW559828B (en) 2003-11-01

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