CN1282250C - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN1282250C CN1282250C CNB03104364XA CN03104364A CN1282250C CN 1282250 C CN1282250 C CN 1282250C CN B03104364X A CNB03104364X A CN B03104364XA CN 03104364 A CN03104364 A CN 03104364A CN 1282250 C CN1282250 C CN 1282250C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- electrically connected
- transistor
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- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000003860 storage Methods 0.000 title claims description 26
- 210000004027 cell Anatomy 0.000 claims description 85
- 230000003068 static effect Effects 0.000 claims description 8
- 210000000352 storage cell Anatomy 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 description 108
- 238000009792 diffusion process Methods 0.000 description 79
- 230000015572 biosynthetic process Effects 0.000 description 21
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 description 19
- 230000000694 effects Effects 0.000 description 19
- 230000009471 action Effects 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 13
- 238000003475 lamination Methods 0.000 description 10
- 230000008901 benefit Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002098553A JP4278338B2 (ja) | 2002-04-01 | 2002-04-01 | 半導体記憶装置 |
JP98553/02 | 2002-04-01 | ||
JP98553/2002 | 2002-04-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100681516A Division CN1841750B (zh) | 2002-04-01 | 2003-02-08 | 半导体存储装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1449050A CN1449050A (zh) | 2003-10-15 |
CN1282250C true CN1282250C (zh) | 2006-10-25 |
Family
ID=28449821
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100681516A Expired - Fee Related CN1841750B (zh) | 2002-04-01 | 2003-02-08 | 半导体存储装置 |
CNB03104364XA Expired - Fee Related CN1282250C (zh) | 2002-04-01 | 2003-02-08 | 半导体存储装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100681516A Expired - Fee Related CN1841750B (zh) | 2002-04-01 | 2003-02-08 | 半导体存储装置 |
Country Status (5)
Country | Link |
---|---|
US (7) | US6985379B2 (zh) |
JP (1) | JP4278338B2 (zh) |
KR (1) | KR100522631B1 (zh) |
CN (2) | CN1841750B (zh) |
TW (1) | TW577170B (zh) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4278338B2 (ja) * | 2002-04-01 | 2009-06-10 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP2004362695A (ja) * | 2003-06-05 | 2004-12-24 | Renesas Technology Corp | 半導体記憶装置 |
CN1816882A (zh) * | 2003-07-01 | 2006-08-09 | 兹莫斯技术有限公司 | 静态存储器单元结构和电路 |
CN100524517C (zh) * | 2003-10-27 | 2009-08-05 | 日本电气株式会社 | 半导体存储装置 |
US20050253287A1 (en) * | 2004-05-11 | 2005-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual-port SRAM cell structure |
JP4493398B2 (ja) * | 2004-05-13 | 2010-06-30 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
JP4535776B2 (ja) * | 2004-05-24 | 2010-09-01 | 富士通セミコンダクター株式会社 | 半導体装置 |
US7139189B2 (en) * | 2004-09-24 | 2006-11-21 | Intel Corporation | State-retentive mixed register file array |
JP4849249B2 (ja) | 2004-12-16 | 2012-01-11 | 日本電気株式会社 | 半導体記憶装置 |
JP4578329B2 (ja) * | 2005-06-03 | 2010-11-10 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP4624198B2 (ja) | 2005-07-06 | 2011-02-02 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
CN1893084A (zh) | 2005-07-07 | 2007-01-10 | 松下电器产业株式会社 | 半导体装置 |
JP2007043081A (ja) * | 2005-07-07 | 2007-02-15 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US7196923B1 (en) * | 2005-09-30 | 2007-03-27 | Intel Corporation | Bitcell layout |
JPWO2007063988A1 (ja) * | 2005-12-02 | 2009-05-07 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JPWO2007063990A1 (ja) | 2005-12-02 | 2009-05-07 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US8767444B2 (en) * | 2006-03-27 | 2014-07-01 | Honeywell International Inc. | Radiation-hardened memory element with multiple delay elements |
US9424889B1 (en) * | 2015-02-04 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-port SRAM device |
US7660149B2 (en) * | 2006-12-07 | 2010-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM cell with separate read and write ports |
US7839697B2 (en) * | 2006-12-21 | 2010-11-23 | Panasonic Corporation | Semiconductor memory device |
JP5268084B2 (ja) * | 2006-12-22 | 2013-08-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7420836B1 (en) * | 2007-02-13 | 2008-09-02 | International Business Machines Corporation | Single-ended memory cell with improved read stability and memory using the cell |
US20090161410A1 (en) * | 2007-12-21 | 2009-06-25 | Texas Instruments Inc. | Seven transistor sram cell |
US7826251B2 (en) * | 2008-05-22 | 2010-11-02 | International Business Machines Corporation | High performance metal gate polygate 8 transistor SRAM cell with reduced variability |
JP2009295229A (ja) * | 2008-06-05 | 2009-12-17 | Toshiba Corp | 半導体記憶装置 |
US7782656B2 (en) * | 2008-07-23 | 2010-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM with improved read/write stability |
JP5260180B2 (ja) * | 2008-08-20 | 2013-08-14 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP5147654B2 (ja) | 2008-11-18 | 2013-02-20 | パナソニック株式会社 | 半導体装置 |
US7969759B1 (en) * | 2008-12-19 | 2011-06-28 | Suvolta, Inc. | Method and apparatus for improving SRAM write operations |
JP5549079B2 (ja) * | 2009-01-14 | 2014-07-16 | セイコーエプソン株式会社 | 半導体集積回路 |
US7961499B2 (en) * | 2009-01-22 | 2011-06-14 | Qualcomm Incorporated | Low leakage high performance static random access memory cell using dual-technology transistors |
JP5005713B2 (ja) * | 2009-02-12 | 2012-08-22 | パナソニック株式会社 | 半導体記憶装置 |
US8014184B1 (en) * | 2009-09-14 | 2011-09-06 | Xilinx, Inc. | Radiation hardened memory cell |
KR101874779B1 (ko) * | 2009-12-25 | 2018-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 장치, 반도체 장치, 및 전자 장치 |
US8325510B2 (en) * | 2010-02-12 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Weak bit compensation for static random access memory |
US8300493B2 (en) | 2010-04-01 | 2012-10-30 | Broadcom Corporation | Encoded read-only memory (ROM) decoder |
JP5724206B2 (ja) * | 2010-04-16 | 2015-05-27 | 富士通セミコンダクター株式会社 | マスタスライス方式メモリセル |
KR101904445B1 (ko) * | 2010-04-16 | 2018-10-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6034764B2 (ja) * | 2013-08-05 | 2016-11-30 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
EP3032540A4 (en) | 2013-08-06 | 2017-03-15 | Renesas Electronics Corporation | Semiconductor integrated circuit device |
US9183933B2 (en) * | 2014-01-10 | 2015-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell |
US10354952B2 (en) * | 2014-10-30 | 2019-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell having multi-level word line |
KR102193633B1 (ko) | 2014-12-30 | 2020-12-21 | 삼성전자주식회사 | 듀얼 포트 에스램 장치 및 그 제조 방법 |
US10014065B1 (en) * | 2015-03-13 | 2018-07-03 | Skan Technologies Corporation | PPA (power performance area) efficient architecture for ROM (read only memory) and a ROM bitcell without a transistor |
US9754872B1 (en) | 2016-05-16 | 2017-09-05 | Micron Technology, Inc. | Assemblies having shield lines of an upper wiring level electrically coupled with shield lines of a lower wiring level |
CN108701676B (zh) * | 2016-05-16 | 2021-07-23 | 美光科技公司 | 具有与下部布线层的屏蔽线电耦合的上部布线层的屏蔽线的组合件 |
US10304771B2 (en) | 2017-03-10 | 2019-05-28 | Micron Technology, Inc. | Assemblies having shield lines of an upper wiring layer electrically coupled with shield lines of a lower wiring layer |
KR20180028020A (ko) * | 2016-09-07 | 2018-03-15 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 장치 |
US10050045B1 (en) * | 2017-06-16 | 2018-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM cell with balanced write port |
CN112489701B (zh) * | 2017-09-22 | 2023-12-05 | 联华电子股份有限公司 | 静态随机存取存储器组成的存储器元件 |
US10818677B2 (en) | 2018-07-16 | 2020-10-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Layout of static random access memory periphery circuit |
US10868018B2 (en) * | 2018-10-25 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM structure and connection |
US11074966B2 (en) * | 2018-10-31 | 2021-07-27 | Taiwan Semiconductor Manufacturing Company, Ltd | Method and system to balance ground bounce |
JP6802313B2 (ja) * | 2019-04-22 | 2020-12-16 | ルネサスエレクトロニクス株式会社 | デュアルポートsram |
US10937865B2 (en) * | 2019-07-17 | 2021-03-02 | Micron Technology, Inc. | Semiconductor device having transistors in which source/drain regions are shared |
CN110634879B (zh) * | 2019-09-25 | 2021-12-10 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法 |
US11521676B2 (en) * | 2020-04-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | SRAM structure with asymmetric interconnection |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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US4995001A (en) * | 1988-10-31 | 1991-02-19 | International Business Machines Corporation | Memory cell and read circuit |
EP0578915A3 (en) | 1992-07-16 | 1994-05-18 | Hewlett Packard Co | Two-port ram cell |
TW297158B (zh) * | 1994-05-27 | 1997-02-01 | Hitachi Ltd | |
DE4437581C2 (de) * | 1994-10-20 | 1996-08-08 | Siemens Ag | Verfahren zur Herstellung einer Festwertspeicherzellenanordnung mit vertikalen MOS-Transistoren |
JP3609868B2 (ja) * | 1995-05-30 | 2005-01-12 | 株式会社ルネサステクノロジ | スタティック型半導体記憶装置 |
JP2867948B2 (ja) * | 1996-03-29 | 1999-03-10 | 日本電気株式会社 | 半導体記憶装置とその製造方法 |
JP3523762B2 (ja) * | 1996-12-19 | 2004-04-26 | 株式会社東芝 | 半導体記憶装置 |
US5808933A (en) * | 1997-03-28 | 1998-09-15 | International Business Machines Corporation | Zero-write-cycle memory cell apparatus |
US5985379A (en) * | 1997-07-22 | 1999-11-16 | Franklin Mint Company | Decorative display plate |
JP4501164B2 (ja) * | 1998-05-01 | 2010-07-14 | ソニー株式会社 | 半導体記憶装置 |
JP2000030469A (ja) | 1998-07-14 | 2000-01-28 | Oki Electric Ind Co Ltd | 連想メモリセル及び連想メモリ |
US5973985A (en) * | 1998-08-11 | 1999-10-26 | Stmicroelectronics, Inc. | Dual port SRAM cell having pseudo ground line or pseudo power line |
JP3852729B2 (ja) | 1998-10-27 | 2006-12-06 | 富士通株式会社 | 半導体記憶装置 |
JP3416062B2 (ja) * | 1998-10-29 | 2003-06-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 連想メモリ(cam) |
US5966317A (en) * | 1999-02-10 | 1999-10-12 | Lucent Technologies Inc. | Shielded bitlines for static RAMs |
JP4565700B2 (ja) | 1999-05-12 | 2010-10-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2001068635A (ja) | 1999-08-27 | 2001-03-16 | Mitsubishi Electric Corp | 半導体装置 |
US6240009B1 (en) * | 2000-02-02 | 2001-05-29 | Hewlett-Packard Company | Asymmetric ram cell |
JP4885365B2 (ja) | 2000-05-16 | 2012-02-29 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
TW522546B (en) * | 2000-12-06 | 2003-03-01 | Mitsubishi Electric Corp | Semiconductor memory |
JP2002359298A (ja) * | 2001-05-31 | 2002-12-13 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2003218238A (ja) * | 2001-11-14 | 2003-07-31 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR100406760B1 (ko) * | 2001-11-16 | 2003-11-21 | 신코엠 주식회사 | 반도체 메모리 장치 |
JP4278338B2 (ja) * | 2002-04-01 | 2009-06-10 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
CN1893084A (zh) * | 2005-07-07 | 2007-01-10 | 松下电器产业株式会社 | 半导体装置 |
-
2002
- 2002-04-01 JP JP2002098553A patent/JP4278338B2/ja not_active Expired - Fee Related
- 2002-11-08 TW TW091132931A patent/TW577170B/zh not_active IP Right Cessation
- 2002-11-27 US US10/305,004 patent/US6985379B2/en not_active Expired - Lifetime
-
2003
- 2003-02-03 KR KR10-2003-0006506A patent/KR100522631B1/ko active IP Right Grant
- 2003-02-08 CN CN2006100681516A patent/CN1841750B/zh not_active Expired - Fee Related
- 2003-02-08 CN CNB03104364XA patent/CN1282250C/zh not_active Expired - Fee Related
-
2005
- 2005-08-22 US US11/207,938 patent/US7035135B2/en not_active Expired - Lifetime
-
2006
- 2006-03-21 US US11/384,242 patent/US7376002B2/en not_active Expired - Lifetime
-
2007
- 2007-11-28 US US11/987,180 patent/US7489539B2/en not_active Expired - Lifetime
-
2008
- 2008-11-10 US US12/268,101 patent/US7738285B2/en not_active Expired - Fee Related
-
2010
- 2010-05-03 US US12/772,905 patent/US7969766B2/en not_active Expired - Fee Related
-
2011
- 2011-05-18 US US13/110,394 patent/US8238142B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4278338B2 (ja) | 2009-06-10 |
US20090075432A1 (en) | 2009-03-19 |
US20050281077A1 (en) | 2005-12-22 |
KR20030079670A (ko) | 2003-10-10 |
US20100216284A1 (en) | 2010-08-26 |
US7489539B2 (en) | 2009-02-10 |
CN1841750A (zh) | 2006-10-04 |
TW577170B (en) | 2004-02-21 |
US20030185044A1 (en) | 2003-10-02 |
US20060171195A1 (en) | 2006-08-03 |
US7738285B2 (en) | 2010-06-15 |
US7035135B2 (en) | 2006-04-25 |
US20110221007A1 (en) | 2011-09-15 |
CN1449050A (zh) | 2003-10-15 |
US8238142B2 (en) | 2012-08-07 |
US6985379B2 (en) | 2006-01-10 |
JP2003297953A (ja) | 2003-10-17 |
US7969766B2 (en) | 2011-06-28 |
TW200305275A (en) | 2003-10-16 |
US7376002B2 (en) | 2008-05-20 |
KR100522631B1 (ko) | 2005-10-20 |
CN1841750B (zh) | 2010-05-12 |
US20080089115A1 (en) | 2008-04-17 |
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