CN1186820C - 半导体存储阵列及其制造方法 - Google Patents

半导体存储阵列及其制造方法 Download PDF

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Publication number
CN1186820C
CN1186820C CNB011357045A CN01135704A CN1186820C CN 1186820 C CN1186820 C CN 1186820C CN B011357045 A CNB011357045 A CN B011357045A CN 01135704 A CN01135704 A CN 01135704A CN 1186820 C CN1186820 C CN 1186820C
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forming
conductive material
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Expired - Lifetime
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CNB011357045A
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Chinese (zh)
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CN1351382A (zh
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C·H·王
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Silicon Storage Technology Inc
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Silicon Storage Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CNB011357045A 2000-09-20 2001-09-19 半导体存储阵列及其制造方法 Expired - Lifetime CN1186820C (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US23398800P 2000-09-20 2000-09-20
US23431400P 2000-09-20 2000-09-20
US60/233988 2000-09-20
US24209600P 2000-10-19 2000-10-19
US60/242096 2001-07-26
US60/234314 2001-07-26
US09/916619 2001-07-26
US09/916,619 US6868015B2 (en) 2000-09-20 2001-07-26 Semiconductor memory array of floating gate memory cells with control gate spacer portions

Publications (2)

Publication Number Publication Date
CN1351382A CN1351382A (zh) 2002-05-29
CN1186820C true CN1186820C (zh) 2005-01-26

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Family Applications (1)

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CNB011357045A Expired - Lifetime CN1186820C (zh) 2000-09-20 2001-09-19 半导体存储阵列及其制造方法

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US (2) US6868015B2 (enExample)
EP (1) EP1191585A2 (enExample)
JP (1) JP5140219B2 (enExample)
KR (1) KR100821495B1 (enExample)
CN (1) CN1186820C (enExample)
TW (1) TW514994B (enExample)

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US7759719B2 (en) * 2004-07-01 2010-07-20 Chih-Hsin Wang Electrically alterable memory cell
US7550800B2 (en) * 2003-06-06 2009-06-23 Chih-Hsin Wang Method and apparatus transporting charges in semiconductor device and semiconductor memory device
US7613041B2 (en) * 2003-06-06 2009-11-03 Chih-Hsin Wang Methods for operating semiconductor device and semiconductor memory device
US7009244B2 (en) * 2003-07-02 2006-03-07 Integrated Memory Technologies, Inc. Scalable flash EEPROM memory cell with notched floating gate and graded source region
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US20080203464A1 (en) * 2004-07-01 2008-08-28 Chih-Hsin Wang Electrically alterable non-volatile memory and array
US7411244B2 (en) * 2005-06-28 2008-08-12 Chih-Hsin Wang Low power electrically alterable nonvolatile memory cells and arrays
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US8138524B2 (en) * 2006-11-01 2012-03-20 Silicon Storage Technology, Inc. Self-aligned method of forming a semiconductor memory array of floating memory cells with source side erase, and a memory array made thereby
US7641226B2 (en) * 2006-11-01 2010-01-05 Autoliv Development Ab Side airbag module with an internal guide fin
US20080157170A1 (en) * 2006-12-29 2008-07-03 Atmel Corporation Eeprom cell with adjustable barrier in the tunnel window region
US8072023B1 (en) 2007-11-12 2011-12-06 Marvell International Ltd. Isolation for non-volatile memory cell array
US8120088B1 (en) 2007-12-07 2012-02-21 Marvell International Ltd. Non-volatile memory cell and array
US9634019B1 (en) * 2015-10-01 2017-04-25 Silicon Storage Technology, Inc. Non-volatile split gate memory cells with integrated high K metal gate, and method of making same
CN107305892B (zh) * 2016-04-20 2020-10-02 硅存储技术公司 使用两个多晶硅沉积步骤来形成三栅极非易失性闪存单元对的方法
CN107359163B (zh) * 2016-05-05 2020-06-02 中芯国际集成电路制造（天津）有限公司 存储单元的制备方法
CN109417094B (zh) * 2016-07-01 2022-10-21 英特尔公司 自-对准栅极边缘三栅极和finFET器件
TWI805336B (zh) * 2022-04-25 2023-06-11 華邦電子股份有限公司 半導體結構及其形成方法

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Publication number Publication date
JP2002151608A (ja) 2002-05-24
KR20020022628A (ko) 2002-03-27
US7018897B2 (en) 2006-03-28
US6868015B2 (en) 2005-03-15
JP5140219B2 (ja) 2013-02-06
CN1351382A (zh) 2002-05-29
TW514994B (en) 2002-12-21
US20040214395A1 (en) 2004-10-28
US20020034846A1 (en) 2002-03-21
KR100821495B1 (ko) 2008-04-11
EP1191585A2 (en) 2002-03-27

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