JP5140219B2 - 半導体回路に一連の半導体メモリの浮動ゲートメモリセルを形成する自己調整方法 - Google Patents

半導体回路に一連の半導体メモリの浮動ゲートメモリセルを形成する自己調整方法 Download PDF

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Publication number
JP5140219B2
JP5140219B2 JP2001284960A JP2001284960A JP5140219B2 JP 5140219 B2 JP5140219 B2 JP 5140219B2 JP 2001284960 A JP2001284960 A JP 2001284960A JP 2001284960 A JP2001284960 A JP 2001284960A JP 5140219 B2 JP5140219 B2 JP 5140219B2
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forming
conductive material
groove
insulating material
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JP2002151608A (ja
JP2002151608A5 (enExample
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チー・シン・ワン
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Silicon Storage Technology Inc
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Silicon Storage Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2001284960A 2000-09-20 2001-09-19 半導体回路に一連の半導体メモリの浮動ゲートメモリセルを形成する自己調整方法 Expired - Lifetime JP5140219B2 (ja)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US23431400P 2000-09-20 2000-09-20
US23398800P 2000-09-20 2000-09-20
US60/233988 2000-09-20
US60/234314 2000-09-20
US24209600P 2000-10-19 2000-10-19
US60/242096 2000-10-19
US09/916,619 US6868015B2 (en) 2000-09-20 2001-07-26 Semiconductor memory array of floating gate memory cells with control gate spacer portions
US09/916619 2001-07-26

Publications (3)

Publication Number Publication Date
JP2002151608A JP2002151608A (ja) 2002-05-24
JP2002151608A5 JP2002151608A5 (enExample) 2008-09-04
JP5140219B2 true JP5140219B2 (ja) 2013-02-06

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JP2001284960A Expired - Lifetime JP5140219B2 (ja) 2000-09-20 2001-09-19 半導体回路に一連の半導体メモリの浮動ゲートメモリセルを形成する自己調整方法

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US (2) US6868015B2 (enExample)
EP (1) EP1191585A2 (enExample)
JP (1) JP5140219B2 (enExample)
KR (1) KR100821495B1 (enExample)
CN (1) CN1186820C (enExample)
TW (1) TW514994B (enExample)

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US7613041B2 (en) * 2003-06-06 2009-11-03 Chih-Hsin Wang Methods for operating semiconductor device and semiconductor memory device
US7759719B2 (en) * 2004-07-01 2010-07-20 Chih-Hsin Wang Electrically alterable memory cell
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US20080203464A1 (en) * 2004-07-01 2008-08-28 Chih-Hsin Wang Electrically alterable non-volatile memory and array
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US7641226B2 (en) * 2006-11-01 2010-01-05 Autoliv Development Ab Side airbag module with an internal guide fin
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US9634019B1 (en) * 2015-10-01 2017-04-25 Silicon Storage Technology, Inc. Non-volatile split gate memory cells with integrated high K metal gate, and method of making same
CN107305892B (zh) * 2016-04-20 2020-10-02 硅存储技术公司 使用两个多晶硅沉积步骤来形成三栅极非易失性闪存单元对的方法
CN107359163B (zh) * 2016-05-05 2020-06-02 中芯国际集成电路制造（天津）有限公司 存储单元的制备方法
KR102604564B1 (ko) 2016-07-01 2023-11-22 인텔 코포레이션 자기 정렬 게이트 에지 트라이게이트 및 finfet 디바이스들
TWI805336B (zh) * 2022-04-25 2023-06-11 華邦電子股份有限公司 半導體結構及其形成方法

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Also Published As

Publication number Publication date
TW514994B (en) 2002-12-21
EP1191585A2 (en) 2002-03-27
CN1351382A (zh) 2002-05-29
CN1186820C (zh) 2005-01-26
JP2002151608A (ja) 2002-05-24
US7018897B2 (en) 2006-03-28
KR100821495B1 (ko) 2008-04-11
US20020034846A1 (en) 2002-03-21
KR20020022628A (ko) 2002-03-27
US6868015B2 (en) 2005-03-15
US20040214395A1 (en) 2004-10-28

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