CN1173218C - 液晶显示装置及其制造方法和驱动方法 - Google Patents

液晶显示装置及其制造方法和驱动方法 Download PDF

Info

Publication number
CN1173218C
CN1173218C CNB981271723A CN98127172A CN1173218C CN 1173218 C CN1173218 C CN 1173218C CN B981271723 A CNB981271723 A CN B981271723A CN 98127172 A CN98127172 A CN 98127172A CN 1173218 C CN1173218 C CN 1173218C
Authority
CN
China
Prior art keywords
electrode
insulating film
storage
gate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB981271723A
Other languages
English (en)
Chinese (zh)
Other versions
CN1224887A (zh
Inventor
֣����
郑柄厚
黄长元
裵秉成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019970079791A external-priority patent/KR100552280B1/ko
Priority claimed from KR1019980002312A external-priority patent/KR100247271B1/ko
Priority claimed from KR1019980002311A external-priority patent/KR100247270B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1224887A publication Critical patent/CN1224887A/zh
Application granted granted Critical
Publication of CN1173218C publication Critical patent/CN1173218C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CNB981271723A 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法 Expired - Lifetime CN1173218C (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
KR79791/97 1997-12-31
KR79791/1997 1997-12-31
KR1019970079791A KR100552280B1 (ko) 1997-12-31 1997-12-31 유지 축전기를 가지는 액정 표시 장치 및 그 제조 방법
KR1019980002312A KR100247271B1 (ko) 1998-01-26 1998-01-26 유지 축전기를 가지는 액정 표시 장치 및 그 제조 방법
KR2312/1998 1998-01-26
KR1019980002311A KR100247270B1 (ko) 1998-01-26 1998-01-26 유지 축전기를 가지는 액정 표시 장치 및 그 제조 방법
KR2312/98 1998-01-26
KR2311/98 1998-01-26
KR2311/1998 1998-01-26

Related Child Applications (4)

Application Number Title Priority Date Filing Date
CN200410062130.4A Division CN100595657C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062131.9A Division CN100595658C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200810166498.3A Division CN101387802B (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062132.3A Division CN1550838B (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法

Publications (2)

Publication Number Publication Date
CN1224887A CN1224887A (zh) 1999-08-04
CN1173218C true CN1173218C (zh) 2004-10-27

Family

ID=27349662

Family Applications (5)

Application Number Title Priority Date Filing Date
CNB981271723A Expired - Lifetime CN1173218C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062132.3A Expired - Lifetime CN1550838B (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200810166498.3A Expired - Lifetime CN101387802B (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062131.9A Expired - Lifetime CN100595658C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062130.4A Expired - Lifetime CN100595657C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法

Family Applications After (4)

Application Number Title Priority Date Filing Date
CN200410062132.3A Expired - Lifetime CN1550838B (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200810166498.3A Expired - Lifetime CN101387802B (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062131.9A Expired - Lifetime CN100595658C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法
CN200410062130.4A Expired - Lifetime CN100595657C (zh) 1997-12-31 1998-12-30 液晶显示装置及其制造方法和驱动方法

Country Status (3)

Country Link
US (5) US6317173B1 (enExample)
JP (2) JP3973787B2 (enExample)
CN (5) CN1173218C (enExample)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777716B1 (en) 1999-02-12 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of manufacturing therefor
JP4402197B2 (ja) * 1999-05-24 2010-01-20 シャープ株式会社 アクティブマトリクス型表示装置
JP2001013523A (ja) * 1999-06-30 2001-01-19 Nec Corp 液晶表示装置及びその製造方法
JP4468529B2 (ja) * 1999-07-09 2010-05-26 シャープ株式会社 液晶表示装置
KR100342860B1 (ko) * 1999-09-08 2002-07-02 구본준, 론 위라하디락사 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치
JP4755748B2 (ja) * 1999-09-24 2011-08-24 東芝モバイルディスプレイ株式会社 平面表示装置
KR100660813B1 (ko) * 1999-12-31 2006-12-26 엘지.필립스 엘시디 주식회사 엑스레이 디텍터용 어레이기판 제조방법
KR100380141B1 (ko) * 2000-09-25 2003-04-11 엘지.필립스 엘시디 주식회사 액정 표시 장치용 어레이 기판 및 그의 제조 방법
JP4632522B2 (ja) * 2000-11-30 2011-02-16 Ｎｅｃ液晶テクノロジー株式会社 反射型液晶表示装置の製造方法
KR100392850B1 (ko) * 2000-12-29 2003-07-28 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
TW490857B (en) * 2001-02-05 2002-06-11 Samsung Electronics Co Ltd Thin film transistor array substrate for liquid crystal display and method of fabricating same
JP4662647B2 (ja) * 2001-03-30 2011-03-30 シャープ株式会社 表示装置及びその製造方法
JP4306142B2 (ja) 2001-04-24 2009-07-29 株式会社日立製作所 画像表示装置及びその製造方法
GB0112561D0 (en) * 2001-05-23 2001-07-18 Koninl Philips Electronics Nv Active plate
KR100797374B1 (ko) * 2001-06-05 2008-01-22 엘지.필립스 엘시디 주식회사 액정표시장치 및 그의 제조방법
KR100699987B1 (ko) * 2001-08-06 2007-03-26 삼성에스디아이 주식회사 높은 캐패시턴스를 갖는 평판표시소자 및 그의 제조방법
US7285459B2 (en) 2001-08-06 2007-10-23 Samsung Sdi Co., Ltd. Flat panel display with high capacitance and method of manufacturing the same
KR100838185B1 (ko) * 2001-09-24 2008-06-13 엘지디스플레이 주식회사 어레이 기판 및 이를 이용한 액정 표시 장치와, 이의 제조방법
KR100557499B1 (ko) * 2002-12-31 2006-03-07 엘지.필립스 엘시디 주식회사 패턴형성방법 및 이를 이용한 액정표시소자와 그 제조방법
GB0302485D0 (en) * 2003-02-04 2003-03-05 Plastic Logic Ltd Pixel capacitors
KR100980010B1 (ko) * 2003-07-14 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판
KR100659532B1 (ko) * 2003-11-28 2006-12-19 삼성에스디아이 주식회사 평판표시장치 및 그의 제조방법
US7379136B2 (en) * 2003-12-29 2008-05-27 Lg.Philips Lcd Co., Ltd. Transflective type liquid crystal display device and method for fabricating the same
US7098091B2 (en) * 2004-02-20 2006-08-29 Au Optronics Corporation Method for fabricating thin film transistors
TWI382452B (zh) * 2004-03-19 2013-01-11 Samsung Display Co Ltd 薄膜電晶體陣列面板及其製造方法
KR101043991B1 (ko) * 2004-07-28 2011-06-24 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR101073403B1 (ko) * 2004-09-09 2011-10-17 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR101050899B1 (ko) * 2004-09-09 2011-07-20 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR100647774B1 (ko) * 2004-11-04 2006-11-23 엘지.필립스 엘시디 주식회사 폴리 실리콘형 박막 트랜지스터 기판 및 제조 방법
KR101230299B1 (ko) * 2005-01-07 2013-02-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판
JP4748441B2 (ja) * 2005-03-08 2011-08-17 セイコーエプソン株式会社 電気泳動表示装置、その製造方法及び電子機器
KR101119186B1 (ko) * 2005-04-06 2012-03-20 삼성전자주식회사 표시패널, 이를 갖는 표시장치 및 이의 제조 방법
KR101217157B1 (ko) * 2005-10-20 2012-12-31 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조 방법
KR20070049742A (ko) * 2005-11-09 2007-05-14 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP2007139948A (ja) * 2005-11-16 2007-06-07 Epson Imaging Devices Corp 電気光学装置及び電子機器
US8212953B2 (en) * 2005-12-26 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101230307B1 (ko) * 2006-02-17 2013-02-06 삼성디스플레이 주식회사 액정 표시 장치
DE102006060734B4 (de) 2006-06-30 2014-03-06 Lg Display Co., Ltd. Flüssigkristalldisplay und Verfahren zu dessen Herstellung
KR20080001941A (ko) * 2006-06-30 2008-01-04 삼성전자주식회사 표시패널
KR101250790B1 (ko) * 2006-06-30 2013-04-04 엘지디스플레이 주식회사 액정표시장치의 제조방법
JP5090693B2 (ja) * 2006-09-04 2012-12-05 三菱電機株式会社 表示装置とその製造方法
KR101335276B1 (ko) * 2006-09-20 2013-11-29 삼성디스플레이 주식회사 어레이 기판, 이를 갖는 표시패널 및 그 제조 방법
KR100978266B1 (ko) * 2006-12-29 2010-08-26 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
CN100505221C (zh) * 2007-03-28 2009-06-24 友达光电股份有限公司 液晶显示器的半导体结构及其制作方法
TWI339443B (en) 2007-04-13 2011-03-21 Au Optronics Corp A pixel and a storage capacitor of the pixel and a method of forming thereof
TWI376556B (en) * 2007-05-30 2012-11-11 Au Optronics Corp Pixel structure and method for forming thereof
CN100464241C (zh) * 2007-07-03 2009-02-25 友达光电股份有限公司 液晶显示器的像素结构及其制造方法
TWI413840B (zh) * 2007-11-02 2013-11-01 Au Optronics Corp 半穿透反射式液晶顯示陣列基板之畫素結構及製造方法
TWI336806B (en) * 2007-11-02 2011-02-01 Au Optronics Corp Pixel of transflective liquid crystal display array substrate and method of fabricating the same
KR101710179B1 (ko) * 2010-06-03 2017-02-27 삼성디스플레이 주식회사 평판 표시 장치 및 그 제조 방법
KR20120129593A (ko) * 2011-05-20 2012-11-28 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
KR101818647B1 (ko) * 2011-06-14 2018-01-16 삼성디스플레이 주식회사 유기 발광 표시장치의 제조방법
KR101833235B1 (ko) * 2011-07-14 2018-04-16 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법
US9012993B2 (en) * 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101942980B1 (ko) * 2012-01-17 2019-01-29 삼성디스플레이 주식회사 반도체 디바이스 및 그 형성 방법
KR101987384B1 (ko) * 2012-11-23 2019-06-11 엘지디스플레이 주식회사 표시장치
KR102529270B1 (ko) * 2016-07-08 2023-05-09 삼성디스플레이 주식회사 표시 장치 및 이의 영상 표시 방법
JP7139636B2 (ja) * 2018-03-19 2022-09-21 株式会社リコー 表示素子及びその製造方法、表示装置、システム

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910988A (ja) * 1982-07-12 1984-01-20 ホシデン株式会社 カラ−液晶表示器
JPH0622245B2 (ja) * 1986-05-02 1994-03-23 富士ゼロックス株式会社 薄膜トランジスタの製造方法
US5051570A (en) * 1989-01-20 1991-09-24 Nec Corporation Liquid crystal light valve showing an improved display contrast
US5305128A (en) * 1989-12-22 1994-04-19 North American Philips Corporation Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same
JP2622183B2 (ja) * 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
JP3092570B2 (ja) 1990-04-11 2000-09-25 セイコーエプソン株式会社 液晶表示パネルの製造方法
US5402254B1 (en) * 1990-10-17 1998-09-22 Hitachi Ltd Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon
KR930012126B1 (ko) 1990-12-18 1993-12-24 삼성전자 주식회사 Ccd형 이미지 센서의 제조방법 및 그 구조
JP3106566B2 (ja) 1991-07-26 2000-11-06 ソニー株式会社 液晶表示装置および製造方法
JPH0635004A (ja) 1992-07-21 1994-02-10 Sony Corp 液晶表示装置
JP2859784B2 (ja) 1992-09-03 1999-02-24 シャープ株式会社 アクティブマトリクス基板
CN1033252C (zh) * 1992-12-29 1996-11-06 株式会社金星社 制造薄膜晶体管的方法
JPH0728090A (ja) 1993-07-14 1995-01-31 Toshiba Corp 液晶表示装置及びその製造方法
JPH0764051A (ja) * 1993-08-27 1995-03-10 Sharp Corp 液晶表示装置およびその駆動方法
JP2875733B2 (ja) * 1994-02-15 1999-03-31 松下電子工業株式会社 半導体装置の製造方法
JPH07302912A (ja) * 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
JP3105408B2 (ja) * 1994-10-19 2000-10-30 シャープ株式会社 液晶表示素子
US5814529A (en) * 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
JP3375814B2 (ja) 1995-02-15 2003-02-10 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置
JP3792749B2 (ja) * 1995-06-02 2006-07-05 株式会社東芝 液晶表示装置
US6372534B1 (en) * 1995-06-06 2002-04-16 Lg. Philips Lcd Co., Ltd Method of making a TFT array with photo-imageable insulating layer over address lines
JP3490216B2 (ja) 1996-04-24 2004-01-26 シャープ株式会社 スイッチング素子基板の製造方法
JP3245527B2 (ja) 1995-12-13 2002-01-15 シャープ株式会社 液晶表示装置
JPH09171196A (ja) 1995-10-16 1997-06-30 Sharp Corp 液晶表示装置
US5917563A (en) * 1995-10-16 1999-06-29 Sharp Kabushiki Kaisha Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line
JP3212252B2 (ja) 1996-06-13 2001-09-25 シャープ株式会社 液晶表示装置
KR100364771B1 (ko) * 1995-10-20 2003-04-07 엘지전자 주식회사 액정표시장치의구조및제조방법
JPH09127556A (ja) * 1995-10-31 1997-05-16 Sony Corp 表示装置及びその駆動方法
KR100193653B1 (ko) * 1995-11-20 1999-06-15 김영환 축적 캐패시터를 구비한 스태거 tft-lcd 및 그의 제조방법
KR100192507B1 (ko) 1996-01-18 1999-06-15 구자홍 티에프티-엘씨디의 구조 및 제조방법
JP3413000B2 (ja) * 1996-01-25 2003-06-03 株式会社東芝 アクティブマトリックス液晶パネル
US6208400B1 (en) * 1996-03-15 2001-03-27 Canon Kabushiki Kaisha Electrode plate having metal electrodes of aluminum or nickel and copper or silver disposed thereon
KR100198539B1 (ko) 1996-05-02 1999-06-15 구자홍 액정표시장치용 박막트랜지스터 제조방법
JP3126661B2 (ja) * 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
JP3708637B2 (ja) * 1996-07-15 2005-10-19 株式会社半導体エネルギー研究所 液晶表示装置
KR100224704B1 (ko) * 1996-07-23 1999-10-15 윤종용 박막 트랜지스터-액정표시장치 및 그 제조방법
KR100234892B1 (ko) * 1996-08-26 1999-12-15 구본준 액정표시장치의 구조 및 그 제조방법
KR100209620B1 (ko) * 1996-08-31 1999-07-15 구자홍 액정 표시 장치 및 그 제조방법
CN1148600C (zh) * 1996-11-26 2004-05-05 三星电子株式会社 薄膜晶体管基片及其制造方法

Also Published As

Publication number Publication date
JP4884281B2 (ja) 2012-02-29
CN1550861A (zh) 2004-12-01
US6549249B2 (en) 2003-04-15
CN1550837A (zh) 2004-12-01
CN101387802A (zh) 2009-03-18
US7271857B2 (en) 2007-09-18
US6317173B1 (en) 2001-11-13
US20020012078A1 (en) 2002-01-31
JPH11271812A (ja) 1999-10-08
US20030147022A1 (en) 2003-08-07
US6784950B2 (en) 2004-08-31
CN1550838B (zh) 2010-05-12
CN101387802B (zh) 2012-05-16
US20030184686A1 (en) 2003-10-02
CN1224887A (zh) 1999-08-04
JP2007199736A (ja) 2007-08-09
US7227597B2 (en) 2007-06-05
US20050161677A1 (en) 2005-07-28
CN100595657C (zh) 2010-03-24
CN100595658C (zh) 2010-03-24
CN1550838A (zh) 2004-12-01
JP3973787B2 (ja) 2007-09-12

Similar Documents

Publication Publication Date Title
CN1173218C (zh) 液晶显示装置及其制造方法和驱动方法
CN1261805C (zh) 液晶显示装置
CN1237386C (zh) 液晶显示装置的制造方法
CN1242489C (zh) 半导体器件及其制造方法
CN1197141C (zh) 半导体显示器件及其制作方法
CN1193403C (zh) 半导体器件
CN1173412C (zh) 半导体器件
CN1267782C (zh) 电光装置
CN101038931A (zh) 有机场致发光装置及电子设备
CN1287214C (zh) 电光装置和电子设备
CN1423305A (zh) 制造半导体器件的方法
CN1665028A (zh) 半导体器件
CN1607432A (zh) 薄膜晶体管阵列基板和液晶显示面板及它们的制造方法
CN1263141C (zh) 半导体存储器件，显示器件，以及便携式电子装置
CN1314715A (zh) 半导体器件及其制造方法
CN1459657A (zh) 平面内开关模式有源矩阵型液晶显示器件及其制造方法
CN1332476A (zh) 半导体器件及其制造方法
CN1165806C (zh) 有源矩阵型显示器
CN1367476A (zh) 有源矩阵显示设备
CN101055385A (zh) 液晶显示器
CN100350442C (zh) 显示驱动器、显示装置和便携电子设备
CN1825598A (zh) 半导体器件及其制造方法
CN1879054A (zh) 薄膜晶体管阵列面板及其制造方法
CN1877861A (zh) 一种便携式信息终端和一种摄象机
CN1227672C (zh) 对存储单元的铁电晶体管读和存入状态的方法及存储矩阵

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG DISPLAY CO., LTD.

Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD.

Effective date: 20121102

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20121102

Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Display Co., Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co., Ltd.

CX01 Expiry of patent term

Granted publication date: 20041027

CX01 Expiry of patent term