JP3973787B2 - 液晶表示装置及びその製造方法 - Google Patents

液晶表示装置及びその製造方法 Download PDF

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Publication number
JP3973787B2
JP3973787B2 JP37413198A JP37413198A JP3973787B2 JP 3973787 B2 JP3973787 B2 JP 3973787B2 JP 37413198 A JP37413198 A JP 37413198A JP 37413198 A JP37413198 A JP 37413198A JP 3973787 B2 JP3973787 B2 JP 3973787B2
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Japan
Prior art keywords
region
electrode
holding
insulating film
liquid crystal
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Expired - Lifetime
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JP37413198A
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English (en)
Japanese (ja)
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JPH11271812A (ja
JPH11271812A5 (enExample
Inventor
柄 厚 鄭
長 元 黄
秉 成 ▲べ▼
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019970079791A external-priority patent/KR100552280B1/ko
Priority claimed from KR1019980002312A external-priority patent/KR100247271B1/ko
Priority claimed from KR1019980002311A external-priority patent/KR100247270B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH11271812A publication Critical patent/JPH11271812A/ja
Publication of JPH11271812A5 publication Critical patent/JPH11271812A5/ja
Application granted granted Critical
Publication of JP3973787B2 publication Critical patent/JP3973787B2/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP37413198A 1997-12-31 1998-12-28 液晶表示装置及びその製造方法 Expired - Lifetime JP3973787B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1019970079791A KR100552280B1 (ko) 1997-12-31 1997-12-31 유지 축전기를 가지는 액정 표시 장치 및 그 제조 방법
KR1998P2312 1998-01-26
KR1997P79791 1998-01-26
KR1019980002312A KR100247271B1 (ko) 1998-01-26 1998-01-26 유지 축전기를 가지는 액정 표시 장치 및 그 제조 방법
KR1019980002311A KR100247270B1 (ko) 1998-01-26 1998-01-26 유지 축전기를 가지는 액정 표시 장치 및 그 제조 방법
KR1998P2311 1998-01-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007103355A Division JP4884281B2 (ja) 1997-12-31 2007-04-11 液晶表示装置及びその製造方法

Publications (3)

Publication Number Publication Date
JPH11271812A JPH11271812A (ja) 1999-10-08
JPH11271812A5 JPH11271812A5 (enExample) 2006-03-09
JP3973787B2 true JP3973787B2 (ja) 2007-09-12

Family

ID=27349662

Family Applications (2)

Application Number Title Priority Date Filing Date
JP37413198A Expired - Lifetime JP3973787B2 (ja) 1997-12-31 1998-12-28 液晶表示装置及びその製造方法
JP2007103355A Expired - Lifetime JP4884281B2 (ja) 1997-12-31 2007-04-11 液晶表示装置及びその製造方法

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Application Number Title Priority Date Filing Date
JP2007103355A Expired - Lifetime JP4884281B2 (ja) 1997-12-31 2007-04-11 液晶表示装置及びその製造方法

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US (5) US6317173B1 (enExample)
JP (2) JP3973787B2 (enExample)
CN (5) CN1173218C (enExample)

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JP4755748B2 (ja) * 1999-09-24 2011-08-24 東芝モバイルディスプレイ株式会社 平面表示装置
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KR101833235B1 (ko) * 2011-07-14 2018-04-16 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법
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US6208400B1 (en) * 1996-03-15 2001-03-27 Canon Kabushiki Kaisha Electrode plate having metal electrodes of aluminum or nickel and copper or silver disposed thereon
KR100198539B1 (ko) 1996-05-02 1999-06-15 구자홍 액정표시장치용 박막트랜지스터 제조방법
JP3126661B2 (ja) * 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
JP3708637B2 (ja) * 1996-07-15 2005-10-19 株式会社半導体エネルギー研究所 液晶表示装置
KR100224704B1 (ko) * 1996-07-23 1999-10-15 윤종용 박막 트랜지스터-액정표시장치 및 그 제조방법
KR100234892B1 (ko) * 1996-08-26 1999-12-15 구본준 액정표시장치의 구조 및 그 제조방법
KR100209620B1 (ko) * 1996-08-31 1999-07-15 구자홍 액정 표시 장치 및 그 제조방법
CN1148600C (zh) * 1996-11-26 2004-05-05 三星电子株式会社 薄膜晶体管基片及其制造方法

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CN1550861A (zh) 2004-12-01
US6549249B2 (en) 2003-04-15
CN1550837A (zh) 2004-12-01
CN101387802A (zh) 2009-03-18
US7271857B2 (en) 2007-09-18
CN1173218C (zh) 2004-10-27
US6317173B1 (en) 2001-11-13
US20020012078A1 (en) 2002-01-31
JPH11271812A (ja) 1999-10-08
US20030147022A1 (en) 2003-08-07
US6784950B2 (en) 2004-08-31
CN1550838B (zh) 2010-05-12
CN101387802B (zh) 2012-05-16
US20030184686A1 (en) 2003-10-02
CN1224887A (zh) 1999-08-04
JP2007199736A (ja) 2007-08-09
US7227597B2 (en) 2007-06-05
US20050161677A1 (en) 2005-07-28
CN100595657C (zh) 2010-03-24
CN100595658C (zh) 2010-03-24
CN1550838A (zh) 2004-12-01

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