CN105431948A - 垂直功率晶体管器件 - Google Patents

垂直功率晶体管器件 Download PDF

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Publication number
CN105431948A
CN105431948A CN201480044619.0A CN201480044619A CN105431948A CN 105431948 A CN105431948 A CN 105431948A CN 201480044619 A CN201480044619 A CN 201480044619A CN 105431948 A CN105431948 A CN 105431948A
Authority
CN
China
Prior art keywords
layer
transistor device
transistor
microns
devices according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480044619.0A
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English (en)
Chinese (zh)
Inventor
V.帕拉
A.K.阿加瓦尔
L.程
D.J.利奇滕瓦尔纳
J.W.帕尔摩尔
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Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of CN105431948A publication Critical patent/CN105431948A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/158—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201480044619.0A 2013-08-08 2014-08-06 垂直功率晶体管器件 Pending CN105431948A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/962,295 US9331197B2 (en) 2013-08-08 2013-08-08 Vertical power transistor device
US13/962295 2013-08-08
PCT/US2014/049941 WO2015021154A1 (en) 2013-08-08 2014-08-06 Vertical power transistor device

Publications (1)

Publication Number Publication Date
CN105431948A true CN105431948A (zh) 2016-03-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480044619.0A Pending CN105431948A (zh) 2013-08-08 2014-08-06 垂直功率晶体管器件

Country Status (6)

Country Link
US (4) US9331197B2 (enExample)
EP (1) EP3031083B1 (enExample)
JP (2) JP6306704B2 (enExample)
CN (1) CN105431948A (enExample)
TW (1) TWI536575B (enExample)
WO (1) WO2015021154A1 (enExample)

Cited By (4)

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CN110137241A (zh) * 2018-02-09 2019-08-16 株式会社电装 碳化硅半导体基底和碳化硅半导体装置
US10818495B2 (en) 2018-07-12 2020-10-27 Alpha Power Solutions Limited Semiconductor devices and methods of making the same
CN112534586A (zh) * 2018-07-13 2021-03-19 克利公司 宽带隙半导体器件
CN112670344A (zh) * 2020-12-10 2021-04-16 复旦大学 一种渐变沟道的SiC MOSFET及其自对准工艺

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US9331197B2 (en) 2013-08-08 2016-05-03 Cree, Inc. Vertical power transistor device
US10600903B2 (en) 2013-09-20 2020-03-24 Cree, Inc. Semiconductor device including a power transistor device and bypass diode
US10868169B2 (en) 2013-09-20 2020-12-15 Cree, Inc. Monolithically integrated vertical power transistor and bypass diode
CN106898652B (zh) * 2017-03-09 2019-06-04 电子科技大学 一种碳化硅vdmos器件
US10608102B2 (en) 2017-09-29 2020-03-31 Electronics And Telecommunications Research Institute Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the same
US10685886B2 (en) 2017-12-15 2020-06-16 International Business Machines Corporation Fabrication of logic devices and power devices on the same substrate
US11069804B2 (en) 2018-08-31 2021-07-20 Alpha And Omega Semiconductor (Cayman) Ltd. Integration of HVLDMOS with shared isolation region
JP7413701B2 (ja) 2019-10-03 2024-01-16 富士電機株式会社 窒化物半導体装置及び窒化物半導体装置の製造方法
CN116137283B (zh) * 2021-11-17 2025-09-12 苏州东微半导体股份有限公司 半导体超结功率器件
CN115117145B (zh) * 2022-05-12 2025-09-09 厦门紫硅半导体科技有限公司 一种低导通电阻的SiC基MOSFET器件及其制备方法
TWI818652B (zh) * 2022-07-29 2023-10-11 鴻海精密工業股份有限公司 半導體裝置的製造方法
US12471340B2 (en) * 2022-10-27 2025-11-11 Panjit International Inc. Manufacturing method of forming semiconductor device and semiconductor device
TWI885815B (zh) * 2024-03-22 2025-06-01 鴻揚半導體股份有限公司 半導體裝置與其形成方法
CN119421488B (zh) * 2024-10-16 2025-09-23 浙江创芯集成电路有限公司 半导体结构及其形成方法、反相器电路

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