JP6306704B2 - 縦型パワートランジスタデバイス - Google Patents

縦型パワートランジスタデバイス Download PDF

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JP6306704B2
JP6306704B2 JP2016533399A JP2016533399A JP6306704B2 JP 6306704 B2 JP6306704 B2 JP 6306704B2 JP 2016533399 A JP2016533399 A JP 2016533399A JP 2016533399 A JP2016533399 A JP 2016533399A JP 6306704 B2 JP6306704 B2 JP 6306704B2
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Prior art keywords
transistor device
layer
diffusion layer
region
power mosfet
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Japanese (ja)
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JP2016529720A5 (enExample
JP2016529720A (ja
Inventor
ヴィピンダス パーラ
ヴィピンダス パーラ
アナント クマール アガーワル
アナント クマール アガーワル
リン チェン
リン チェン
ダニエル ジェンナー リヒテンヴァルナー
ダニエル ジェンナー リヒテンヴァルナー
ジョン ウィリアムズ パーマー
ジョン ウィリアムズ パーマー
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/158—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2016533399A 2013-08-08 2014-08-06 縦型パワートランジスタデバイス Active JP6306704B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/962,295 US9331197B2 (en) 2013-08-08 2013-08-08 Vertical power transistor device
US13/962,295 2013-08-08
PCT/US2014/049941 WO2015021154A1 (en) 2013-08-08 2014-08-06 Vertical power transistor device

Related Child Applications (1)

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JP2018041765A Division JP6644823B2 (ja) 2013-08-08 2018-03-08 縦型パワートランジスタデバイス

Publications (3)

Publication Number Publication Date
JP2016529720A JP2016529720A (ja) 2016-09-23
JP2016529720A5 JP2016529720A5 (enExample) 2017-05-25
JP6306704B2 true JP6306704B2 (ja) 2018-04-04

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JP2016533399A Active JP6306704B2 (ja) 2013-08-08 2014-08-06 縦型パワートランジスタデバイス
JP2018041765A Active JP6644823B2 (ja) 2013-08-08 2018-03-08 縦型パワートランジスタデバイス

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Country Status (6)

Country Link
US (4) US9331197B2 (enExample)
EP (1) EP3031083B1 (enExample)
JP (2) JP6306704B2 (enExample)
CN (1) CN105431948A (enExample)
TW (1) TWI536575B (enExample)
WO (1) WO2015021154A1 (enExample)

Cited By (1)

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US11862687B2 (en) 2019-10-03 2024-01-02 Fuji Electric Co., Ltd. Nitride semiconductor device and method for fabricating nitride semiconductor device

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US10600903B2 (en) 2013-09-20 2020-03-24 Cree, Inc. Semiconductor device including a power transistor device and bypass diode
US10868169B2 (en) * 2013-09-20 2020-12-15 Cree, Inc. Monolithically integrated vertical power transistor and bypass diode
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