TWI536575B - 垂直式功率電晶體裝置 - Google Patents
垂直式功率電晶體裝置 Download PDFInfo
- Publication number
- TWI536575B TWI536575B TW103127134A TW103127134A TWI536575B TW I536575 B TWI536575 B TW I536575B TW 103127134 A TW103127134 A TW 103127134A TW 103127134 A TW103127134 A TW 103127134A TW I536575 B TWI536575 B TW I536575B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor device
- layer
- region
- source
- microns
- Prior art date
Links
- 239000007943 implant Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 29
- 238000009826 distribution Methods 0.000 claims description 20
- 230000005669 field effect Effects 0.000 claims description 17
- 230000007480 spreading Effects 0.000 claims description 13
- 238000003892 spreading Methods 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 2
- 238000003763 carbonization Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000001172 regenerating effect Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/152—Source regions of DMOS transistors
- H10D62/154—Dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/158—Dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/962,295 US9331197B2 (en) | 2013-08-08 | 2013-08-08 | Vertical power transistor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201515225A TW201515225A (zh) | 2015-04-16 |
| TWI536575B true TWI536575B (zh) | 2016-06-01 |
Family
ID=51358122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103127134A TWI536575B (zh) | 2013-08-08 | 2014-08-07 | 垂直式功率電晶體裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US9331197B2 (enExample) |
| EP (1) | EP3031083B1 (enExample) |
| JP (2) | JP6306704B2 (enExample) |
| CN (1) | CN105431948A (enExample) |
| TW (1) | TWI536575B (enExample) |
| WO (1) | WO2015021154A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI818652B (zh) * | 2022-07-29 | 2023-10-11 | 鴻海精密工業股份有限公司 | 半導體裝置的製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9331197B2 (en) | 2013-08-08 | 2016-05-03 | Cree, Inc. | Vertical power transistor device |
| US10600903B2 (en) | 2013-09-20 | 2020-03-24 | Cree, Inc. | Semiconductor device including a power transistor device and bypass diode |
| US10868169B2 (en) * | 2013-09-20 | 2020-12-15 | Cree, Inc. | Monolithically integrated vertical power transistor and bypass diode |
| CN106898652B (zh) * | 2017-03-09 | 2019-06-04 | 电子科技大学 | 一种碳化硅vdmos器件 |
| US10608102B2 (en) | 2017-09-29 | 2020-03-31 | Electronics And Telecommunications Research Institute | Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the same |
| US10685886B2 (en) | 2017-12-15 | 2020-06-16 | International Business Machines Corporation | Fabrication of logic devices and power devices on the same substrate |
| JP7106881B2 (ja) * | 2018-02-09 | 2022-07-27 | 株式会社デンソー | 炭化珪素基板および炭化珪素半導体装置 |
| CN110718452B (zh) | 2018-07-12 | 2025-04-08 | 创能动力科技有限公司 | 碳化硅器件及其制造方法 |
| US11075295B2 (en) * | 2018-07-13 | 2021-07-27 | Cree, Inc. | Wide bandgap semiconductor device |
| US11069804B2 (en) | 2018-08-31 | 2021-07-20 | Alpha And Omega Semiconductor (Cayman) Ltd. | Integration of HVLDMOS with shared isolation region |
| JP7413701B2 (ja) | 2019-10-03 | 2024-01-16 | 富士電機株式会社 | 窒化物半導体装置及び窒化物半導体装置の製造方法 |
| CN112670344B (zh) * | 2020-12-10 | 2022-07-22 | 复旦大学 | 一种渐变沟道的SiC MOSFET及其自对准工艺 |
| CN116137283B (zh) * | 2021-11-17 | 2025-09-12 | 苏州东微半导体股份有限公司 | 半导体超结功率器件 |
| CN115117145B (zh) * | 2022-05-12 | 2025-09-09 | 厦门紫硅半导体科技有限公司 | 一种低导通电阻的SiC基MOSFET器件及其制备方法 |
| US12471340B2 (en) * | 2022-10-27 | 2025-11-11 | Panjit International Inc. | Manufacturing method of forming semiconductor device and semiconductor device |
| TWI885815B (zh) * | 2024-03-22 | 2025-06-01 | 鴻揚半導體股份有限公司 | 半導體裝置與其形成方法 |
| CN119421488B (zh) * | 2024-10-16 | 2025-09-23 | 浙江创芯集成电路有限公司 | 半导体结构及其形成方法、反相器电路 |
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2013
- 2013-08-08 US US13/962,295 patent/US9331197B2/en not_active Ceased
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2014
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- 2014-08-06 CN CN201480044619.0A patent/CN105431948A/zh active Pending
- 2014-08-06 JP JP2016533399A patent/JP6306704B2/ja active Active
- 2014-08-06 EP EP14752742.8A patent/EP3031083B1/en active Active
- 2014-08-07 TW TW103127134A patent/TWI536575B/zh active
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2016
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- 2018-05-03 US US15/970,148 patent/USRE48380E1/en active Active
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2020
- 2020-10-26 US US17/080,062 patent/USRE49913E1/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI818652B (zh) * | 2022-07-29 | 2023-10-11 | 鴻海精密工業股份有限公司 | 半導體裝置的製造方法 |
| US12490450B2 (en) | 2022-07-29 | 2025-12-02 | Hai Precision Industry Co., Ltd. | Manufacturing method of a semiconductor device with junction field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160211360A1 (en) | 2016-07-21 |
| USRE49913E1 (en) | 2024-04-09 |
| EP3031083B1 (en) | 2021-04-14 |
| WO2015021154A1 (en) | 2015-02-12 |
| US20150041886A1 (en) | 2015-02-12 |
| USRE48380E1 (en) | 2021-01-05 |
| US9741842B2 (en) | 2017-08-22 |
| EP3031083A1 (en) | 2016-06-15 |
| CN105431948A (zh) | 2016-03-23 |
| JP2018125544A (ja) | 2018-08-09 |
| JP6644823B2 (ja) | 2020-02-12 |
| TW201515225A (zh) | 2015-04-16 |
| US9331197B2 (en) | 2016-05-03 |
| JP2016529720A (ja) | 2016-09-23 |
| JP6306704B2 (ja) | 2018-04-04 |
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