JP5617175B2 - ワイドバンドギャップ半導体装置とその製造方法 - Google Patents
ワイドバンドギャップ半導体装置とその製造方法 Download PDFInfo
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- JP5617175B2 JP5617175B2 JP2009045267A JP2009045267A JP5617175B2 JP 5617175 B2 JP5617175 B2 JP 5617175B2 JP 2009045267 A JP2009045267 A JP 2009045267A JP 2009045267 A JP2009045267 A JP 2009045267A JP 5617175 B2 JP5617175 B2 JP 5617175B2
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Description
図40に一般的なトレンチゲート型MOSFETの要部断面図を示す。高不純物濃度n+Si基板101(図40ではn+sub.と表記されている)上にnベース層102とpベース層103を有する。このpベース層103の表面層に選択的に形成されるn+ソース領域105の表面からnベース層102に達する深さのトレンチ108を有する。このトレンチ108内にはゲート絶縁膜106−1を介してゲート電極107が充填されている。前記n+ソース領域105と、該領域に隣接するp+コンタクト領域104との表面に共通に接触するソース電極109を備える。さらに前記高不純物濃度n+Si基板101の他面側にはNi/Ti/Au積層膜を有するドレイン電極110を有する。
Sov.Phys.Semicond. vol.9(1976),pp.820)。
すなわち、前記SiC製トレンチMOSFETでは、前記図40のpベース層103とnベース層102の拡散電位差が大きく、たとえば、SiC製の場合は2.7V程度もある。そのため、Si製MOSFET内蔵のpinダイオードの典型的なオン電圧1.6〜2.0Vと比べ、前記SiC製MOSFET内蔵のpinダイオード(pベース層103/nベース層102/n+基板101)のオン電圧が極めて高くなり、オン時の損失が大きい。またさらに、たとえ内蔵pinダイオードを導通させても、その逆回復時間が少数キャリアの注入によって遅くなるためスイッチング損失が大きくなるという問題も発生する。この逆回復時の損失が増大するという問題に対しては、前述のように内蔵ダイオードとしてユニポーラ動作のショットキーバリアダイオードを形成することにより回避できることが既に知られている。すなわち、前記ショットキーバリアダイオードは、SiCやGaNなどのワイドバンドギャップ半導体においてもそのオン抵抗は小さくなり、さらに、逆回復損失もユニポーラ素子のため小さく、なおかつ十分な逆耐圧を保持できることから、パワー損失を少なくすることができる。さらにこのショットキーバリアダイオードの形成を最適化することにより、前述したトレンチゲート構造のトレンチ底部の酸化膜に加わる電界強度を低減する効果を持たせるようにする構造も知られている。しかし、SiCやGaNなどのワイドバンドギャップ半導体のMOSFETの場合、Siの場合のように制御性よく、イオン注入法により選択的なp型領域等の形成ができないため、その活性領域内の素子表面に選択的に配置され、その表面でショットキーバリア接触を構成する必要のあるnベース層を設置することが極めて困難である。その結果、ワイドバンドギャップ半導体のMOSFETの活性領域内にショットキーバリアダイオードを内蔵させることは、Siの場合と異なり、実際には容易とは言えない。
特許請求の範囲の請求項3記載の発明によれば、前記第一トレンチと前記第二トレンチの中心線間の距離が10μm以下である特許請求の範囲の請求項1または2記載のワイドバンドギャップ半導体装置。
特許請求の範囲の請求項6記載の発明によれば、前記第一トレンチと前記第二トレンチの中心線間の距離が10μm以下である特許請求の範囲の請求項4または5記載のワイドバンドギャップ半導体装置とする。
次に、図3に示すように、ウエハの表面に厚さ1.6μmのシリコン酸化膜(以下酸化膜と略す)6−1を成長させ、フォトリソグラフィおよびエッチングにより、d=7.6μmおきに1.0μm幅の開口部を有する酸化膜マスクを形成する。酸化膜マスクの形成後、RIE法などによるトレンチエッチングによりp型SiCベース層3(厚さ2.5μm)を貫通し、n型SiCドリフト層2に達する深さのトレンチ8−1を形成する。なお、このときのトレンチ8−1の深さは3μmとする。以降、この実施例1ではウエハの表面側に2種類の異なるトレンチを形成するので、異なることを明確にするために、便宜的にゲート電極側に形成するトレンチをゲートトレンチ8−1、ショットキーバリアダイオード部側に形成するトレンチをショットキートレンチ8−2と称することにする。その後、ゲートトレンチ8−1内部に犠牲酸化膜を形成し、犠牲酸化膜を除去することによってトレンチ内表面を平坦化する。次に、図5に示すように、ゲート電極部では、ゲートトレンチ8−1内部に、厚さ100nmのゲート酸化膜6−1の成長後に、ポリシリコン等のゲート電極7を埋め込み、さらにゲート電極7をソース電極9から絶縁するためにゲート電極7表面を覆うように層間絶縁層6−2を形成する。
前記SiC製トレンチMOSFETを作成する際のゲートトレンチ8−1ならびにショットキートレンチ8−2の配置パターンを図7の平面図に示す。ゲートトレンチ8−1は終端部のない環状の平面パターンとすることが好ましい。その際、4H−SiCの(0001)面(C面:カーボン面)にトレンチの側壁が(1−100)面と(−1100)面になるような向きにトレンチを形成させ、かつ、前記ストライプ状に形成したゲートトレンチ8−1に対し、前記両側壁面を45°の角度で形成すると、ゲートトレンチ8−1がきれいに形成されるので好ましい。
以上、説明した本発明について、まとめると、以下のようになる。本発明にかかるWBG半導体装置は、ショットキーバリアダイオードが形成されるショットキートレンチ8−2底部にp+型領域300を形成することで電界を緩和することができ、その結果、前記ショットキートレンチ8−2底部におけるアバランシェ破壊耐量を強めることができる。また、前記ショットキートレンチ8−2の底部にp+型領域300を形成することは、ゲート電極部のゲートトレンチ8−1底部にp+型領域300を形成するよりもプロセス難易度はきわめて低い。その理由は、ゲートトレンチ8−1底部にp+型領域300を形成する場合は、反転層(チャネル)ならびに蓄積層が形成される領域に、たとえば、何らかのプロセスばらつきが原因でp+型領域300が若干でもイオン注入されるとMOSFETのチャネル導通特性が劣化し、オン抵抗に影響する懸念がある。しかし、ショットキートレンチ底部にp+型領域300を設ける場合には、前記チャネルが形成される領域に相当する領域に多少p+型イオンがイオン注入されても特性上なんら影響がないからである。そのため、ショットキートレンチ8−2底部にp+型領域300を形成するのは比較的簡単にできるのである。
以上説明したように本発明は、WBG半導体材料を使ったトレンチMOSFETにおいて、ショットキーバリアダイオードを内蔵でき、かつ、ゲートトレンチ8−1底部には、プロセス的に難しいゲート酸化膜保護用のp+型領域300を設けることなく良好な電気特性と長期信頼性特性を示す。その結果、半導体装置をより小型化できかつ低損失化が可能となる。
前記ショットキートレンチ8−2を形成後、図10に示すように、ショットキートレンチ8−2の内部と基板表面にニッケルとチタンを順次スパッタし、さらに、その上にアルミニウムをスパッタして順次積層することでソース電極9を形成する。同時に、図11に示すように、第三トレンチ8−3間の前記層間絶縁膜6−2上に金属電極膜12を形成する。その後、基板の裏面側にドレイン電極10をチタン、ニッケル、金で形成する。こうしてSiC製トレンチMOSFETが完成する(図10)。
比較のために、まず、周辺耐圧構造領域12に隣接するショットキートレンチ8−2をゲートトレンチ8−1に変更した素子、すなわち、ゲートトレンチ8−1がショットキートレンチ8−2により取り巻かれていない表面パターン構造の素子を作成し、素子耐圧を測定した。そのときの周辺耐圧構造は同じとした。その結果、素子耐圧は1060Vとなり1200Vに達しないことを確認した。
2、52 n型SiCドリフト層
3、53 p型SiCベース層
4、54 p+コンタクト領域
5、55 n+ソース領域
6−1、56−1 ゲート酸化膜
6−2 層間酸化膜
7、57 ゲート電極
8−1 ゲートトレンチ
8−2 ショットキートレンチ
8−3 第三トレンチ
8−4 ドレイントレンチ
9 ソース電極
10 ドレイン電極
12 周辺耐圧構造領域
21 Si基板
22 AlN層
23 GaN層
24 n+GaN層
25 n型GaNドリフト層
26 p型GaNベース層
27 p+GaNコンタクト領域
28 n+GaNソース領域
30,47 ゲート酸化膜
31,48 ゲート電極
32,49 ソース電極
33,50−1 ドレイン電極
41 n型SiC基板
42 p+SiC基板
43 p型SiCドリフト層
44 n型SiCベース層
45 n+コンタクト領域
46 p+ソース領域
50−1 ドレイン電極
50−2 ショットキーカソード電極
300、301 p+型領域。
Claims (7)
- シリコン半導体基板の一方の主面に結晶構造変換用バッファ層を介して高不純物濃度の第1導電型窒化ガリウム半導体層と低不純物濃度の第1導電型窒化ガリウムドリフト層と第2導電型窒化ガリウムベース層と該第ベース層の表面層に選択的に配置される第1導電型の窒化ガリウムソース領域と、該ソース領域の主面から前記ドリフト層に達する深さの第一トレンチとを備え、該第一トレンチが内部に、ゲート絶縁膜を介して、前記ソース領域、前記ベース層および前記ドリフト層に対向する位置にまで充填される制御電極を備え、さらに前記第一トレンチの近傍に、前記ベース層の主面から前記ドリフト層に達する深さであって前記第一トレンチを越える深さの第二トレンチを備え、該第二トレンチが内部に、前記ドリフト層の第二トレンチ内の表面とショットキー接合を形成する第一主電極を有し、かつ該第一主電極が前記ソース領域主面と前記ベース層主面とを共通に被覆し、さらに前記シリコン半導体基板の他方の主面から該シリコン半導体基板と前記バッファ層を貫通して前記高不純物濃度の第1導電型の第一窒化ガリウム半導体層に達する深さの第三トレンチと該第三トレンチ内表面と前記シリコン半導体基板の他方の主面に電気的に接続される第二主電極を備えることを特徴とするワイドバンドギャップ半導体装置。
- 前記第二トレンチ底部に接する第2導電型領域を備えることを特徴とする請求項1記載のワイドバンドギャップ半導体装置。
- 前記第一トレンチと前記第二トレンチの中心線間の距離が10μm以下であることを特徴とする請求項1または2記載のワイドバンドギャップ半導体装置。
- 炭化珪素半導体基板と、該半導体基板の一方の主面に高不純物濃度の第2導電型炭化珪素半導体層と低不純物濃度の第2導電型炭化珪素ドリフト層と第1導電型炭化珪素ベース層と、該ベース層の表面層に選択的に配置される第2導電型の炭化珪素ソース領域と、該ソース領域の主面から前記ドリフト層に達する深さの第一トレンチとを備え、該第一トレンチが内部に、ゲート絶縁膜を介して、前記ソース領域、前記ベース層および前記ドリフト層に対向する位置にまで充填される制御電極とを備え、さらに前記第一トレンチの近傍に、前記ベース層の主面から前記ドリフト層に達する深さであって前記第一トレンチを越える深さの第二トレンチを備え、該第二トレンチが内部に、前記ドリフト層の第二トレンチ内の表面とショットキー接合を形成する第一主電極を有し、かつ該第一主電極が前記ソース領域主面と前記ベース層主面とを共通に被覆し、さらに前記炭化珪素半導体基板の他方の主面から前記高不純物濃度の第2導電型炭化珪素半導体層に達する深さの第三トレンチと、該第三トレンチの内表面と前記炭化珪素半導体基板の他方の主面に電気的に接続される第二主電極を備えることを特徴とするワイドバンドギャップ半導体装置。
- 前記第二トレンチ底部に接する第1導電型領域を備えることを特徴とする請求項4記載のワイドバンドギャップ半導体装置。
- 前記第一トレンチと前記第二トレンチの中心線間の距離が10μm以下であることを特徴とする請求項4または5記載のワイドバンドギャップ半導体装置。
- 前記請求項1乃至6のいずれか1項に記載のワイドバンドギャップ半導体装置を製造する際に、前記第二主電極を形成する前に、前記半導体基板の他方の主面を研磨して薄層化した後、研磨後の主面から前記第三トレンチを形成し、その後、前記第二主電極を形成する工程を有することを特徴とする半導体装置の製造方法。
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