JP6946764B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6946764B2 JP6946764B2 JP2017114767A JP2017114767A JP6946764B2 JP 6946764 B2 JP6946764 B2 JP 6946764B2 JP 2017114767 A JP2017114767 A JP 2017114767A JP 2017114767 A JP2017114767 A JP 2017114767A JP 6946764 B2 JP6946764 B2 JP 6946764B2
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- 239000004065 semiconductor Substances 0.000 title claims description 403
- 238000004519 manufacturing process Methods 0.000 title claims description 51
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 131
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 131
- 230000003071 parasitic effect Effects 0.000 claims description 90
- 239000012535 impurity Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 21
- 239000010410 layer Substances 0.000 description 127
- 239000000758 substrate Substances 0.000 description 47
- 238000000206 photolithography Methods 0.000 description 40
- 238000005468 ion implantation Methods 0.000 description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 27
- 239000002344 surface layer Substances 0.000 description 25
- 238000005530 etching Methods 0.000 description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 229910052698 phosphorus Inorganic materials 0.000 description 13
- 239000011574 phosphorus Substances 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
実施の形態1にかかる半導体装置の構造について説明する。図1は、実施の形態1にかかる半導体装置の活性領域の構造を示す断面図である。図1に示す実施の形態1にかかる半導体装置は、活性領域において、半導体基体(半導体チップ)10のおもて面側に、ゲートトレンチ(第1トレンチ)5と、コンタクトトレンチ(第2トレンチ)8と、を備えたトレンチ型SiC−MOSFETである。活性領域とは、電流駆動を担う領域(オン状態のときに電流が流れる領域)である。ゲートトレンチ5とは、ゲート絶縁膜6を介してゲート電極7が埋め込まれたトレンチである。コンタクトトレンチ8とは、後述するおもて面電極(金属電極:ソース電極11および金属膜12)が埋め込まれ、当該おもて面電極とのコンタクト(電気的接触部)を内壁8a〜8cに形成したトレンチである。
次に、実施の形態2にかかる半導体装置の構造について説明する。図9は、実施の形態2にかかる半導体装置の活性領域の構造を示す断面図である。実施の形態2にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、ゲートトレンチ51の底部51aおよびコーナー部51bの全面にわたってゲート絶縁膜6を介してゲート電極7を覆うp型半導体領域(以下、第2p型半導体領域(第3半導体領域)とする)52が設けられている点である。
次に、実施の形態3にかかる半導体装置の構造について説明する。図13は、実施の形態3にかかる半導体装置の活性領域の構造を示す断面図である。実施の形態3にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、第2p型半導体領域52が設けられている点である。実施の形態3にかかる半導体装置が実施の形態2にかかる半導体装置と異なる点は、第2p型半導体領域52の形状である。実施の形態3では、第2p型半導体領域52は、第1n-型ドリフト領域2aまで達している。このように、実施の形態3では、第2p型半導体領域52の大きさが、実施の形態2よりも大きくなっている。
次に、実施の形態4にかかる半導体装置の構造について説明する。図16は、実施の形態4にかかる半導体装置の活性領域の構造を示す断面図である。実施の形態4にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、第2p型半導体領域52、および第1n-型ドリフト領域2aと第2n型ドリフト領域2bとの界面にp型半導体領域(以下、第3p型半導体領域(第4半導体領域)とする)53が設けられている点である。第3p型半導体領域53は、第1n-型ドリフト領域2aと第2n型ドリフト領域2bとに接している。
次に、実施の形態5にかかる半導体装置の構造について説明する。図19は、実施の形態5にかかる半導体装置の活性領域の構造を示す断面図である。実施の形態5にかかる半導体装置が実施の形態2にかかる半導体装置と異なる点は、第2n型ドリフト領域2bの表面に、n+型領域(第1導電型の第1炭化珪素半導体領域)(以下、第3n+型ドリフト領域とする)2cが設けられていることである。第3n+型ドリフト領域2cは、第2n型ドリフト領域2bの表面に選択的に設けられており、コンタクトトレンチ8の側壁8cと接している。
2 n型ドリフト領域
2a 第1n-型ドリフト領域
2b 第2n型ドリフト領域
2c 第3n+型ドリフト領域
3 p型ベース領域
4 n+型ソース領域
5 ゲートトレンチ
6 ゲート絶縁膜
7 ゲート電極
8 コンタクトトレンチ
8a コンタクトトレンチの底部
8b コンタクトトレンチのコーナー部
8c コンタクトトレンチの側壁
9 層間絶縁膜
9a コンタクトホール
10 半導体基体
11 ソース電極
12 金属膜
13 p型半導体領域
21 寄生pnダイオード
23 寄生ショットキーダイオード
31,32 空乏層
33 ソース・ドレイン間に流れる電流
d1 ゲートトレンチの深さ
d2 コンタクトトレンチの深さ
d3 ゲートトレンチの底部からコンタクトトレンチの底部のp型半導体領域の下面までの距離
d4 コンタクトトレンチの側壁のショットキー接合が形成されている部分の深さ方向の距離
w1 ゲートトレンチの幅
w2 コンタクトトレンチの幅
w3 コンタクトトレンチの底部のp型半導体領域の幅
w4 ゲートトレンチの底部のp型半導体領域の幅
w5 第3n+型ドリフト領域の幅
w6 コンタクトトレンチ間の幅
w7 第5n型ドリフト領域の幅
x ゲートトレンチおよびコンタクトトレンチのストライプ状に延びる方向(第1方向)
y ゲートトレンチおよびコンタクトトレンチが並ぶ方向(第2方向)
z 深さ方向
Claims (11)
- 第1導電型の第1炭化珪素半導体層と、
前記第1炭化珪素半導体層の表面に設けられた、前記第1炭化珪素半導体層より低不純物濃度の第1導電型の第2炭化珪素半導体層と、
前記第2炭化珪素半導体層の内部の、前記第2炭化珪素半導体層の表面よりも深い位置に選択的に設けられた第2導電型の第1半導体領域と、
前記第2炭化珪素半導体層の表面に設けられた、第2導電型の第3炭化珪素半導体層と、
前記第3炭化珪素半導体層の内部に選択的に設けられた第1導電型の第2半導体領域と、
前記第2半導体領域、および前記第3炭化珪素半導体層を貫通して前記第2炭化珪素半導体層に達する第1トレンチと、
前記第1トレンチと離して設けられ、前記第2半導体領域、および前記第3炭化珪素半導体層を貫通し、前記第2炭化珪素半導体層を経て前記第1半導体領域に達する第2トレンチと、
前記第1トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記第2半導体領域、および前記第3炭化珪素半導体層に接し、かつ前記第2トレンチの底部およびコーナー部において前記第1半導体領域に接するように前記第2トレンチの内部に埋め込まれ、前記第2トレンチの側壁に前記第2炭化珪素半導体層とのショットキー接合を形成する金属電極と、を備え、
前記第2トレンチの深さは、ショットキー接合を形成した前記金属電極の面積を所定の面積以上とする深さであり、寄生ショットキーダイオードに流れる電流に対する寄生pnダイオードに流れる電流(寄生pnダイオードに流れる電流/寄生ショットキーダイオードに流れる電流)が1.0以下で、単位セル当たりの前記第2トレンチの底部に位置する前記第1半導体領域の幅とショットキー接合が形成されている部分の前記第2トレンチの幅との比(P/S、但し、P:寄生pnダイオード、S:寄生ショットキーダイオード)が0.4以上であることを特徴とする半導体装置。 - 前記第2炭化珪素半導体層の内部に選択的に設けられ、前記第1トレンチの底部およびコーナー部において前記ゲート絶縁膜を介して前記ゲート電極に対向する第2導電型の第3半導体領域をさらに備えることを特徴とする請求項1に記載の半導体装置。
- 前記第3半導体領域と前記第2炭化珪素半導体層との前記第1炭化珪素半導体層側の界面の深さは、前記第1半導体領域と前記第2炭化珪素半導体層との前記第1炭化珪素半導体層側の界面の深さと同等であることを特徴とする請求項2に記載の半導体装置。
- 前記第2炭化珪素半導体層の内部に、前記第3半導体領域より深い位置に設けられた、第2導電型の第4半導体領域をさらに備え、
前記第4半導体領域と前記第2炭化珪素半導体層との前記第1炭化珪素半導体層側の界面の深さは、前記第1半導体領域と前記第2炭化珪素半導体層との前記第1炭化珪素半導体層側の界面の深さと同等であることを特徴とする請求項2に記載の半導体装置。 - 前記第2炭化珪素半導体層の表面に設けられた、前記第2炭化珪素半導体層より高不純物濃度の第1導電型の第1炭化珪素半導体領域をさらに備え、
前記第3炭化珪素半導体層は、前記第1炭化珪素半導体領域の、前記第2炭化珪素半導体層側に対して反対側の表面に設けられ、
前記第1半導体領域は、前記第2炭化珪素半導体層の内部の、前記第2炭化珪素半導体層と前記第1炭化珪素半導体領域との界面よりも、前記第1炭化珪素半導体層側に設けられ、
前記第3半導体領域は、前記第1炭化珪素半導体領域の内部に設けられることを特徴とする請求項2に記載の半導体装置。 - 前記第1半導体領域の幅は、前記第2トレンチの幅よりも広いことを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。
- 前記第2トレンチの深さは、前記第1トレンチの深さ以上であることを特徴とする請求項1〜6のいずれか一つに記載の半導体装置。
- 前記第2トレンチの深さは、1.8μm以上3.0μm以下であることを特徴とする請求項1〜7のいずれか一つに記載の半導体装置。
- 第1導電型の第1炭化珪素半導体層の表面に、前記第1炭化珪素半導体層より低不純物濃度の第1導電型の第2炭化珪素半導体層を形成する第1工程と、
前記第2炭化珪素半導体層の内部の、前記第2炭化珪素半導体層の表面よりも深い位置に第2導電型の第1半導体領域を選択的に形成する第2工程と、
前記第2炭化珪素半導体層の表面に、第2導電型の第3炭化珪素半導体層を形成する第3工程と、
前記第3炭化珪素半導体層の内部に、第1導電型の第2半導体領域を選択的に形成する第4工程と、
前記第2半導体領域、および前記第3炭化珪素半導体層を貫通して前記第2炭化珪素半導体層に達する第1トレンチを形成する第5工程と、
前記第1トレンチと離して、前記第2半導体領域、および前記第3炭化珪素半導体層を貫通し、前記第2炭化珪素半導体層を経て前記第1半導体領域に達する第2トレンチを形成する第6工程と、
前記第1トレンチの内部にゲート絶縁膜を介してゲート電極を形成する第7工程と、
前記第2半導体領域、および前記第3炭化珪素半導体層に接し、かつ前記第2トレンチの底部およびコーナー部において前記第1半導体領域に接するように前記第2トレンチの内部に金属電極を埋め込み、前記第2トレンチの側壁に前記第2炭化珪素半導体層と前記金属電極とのショットキー接合を形成する第8工程と、を含み、
前記第8工程では、前記第2トレンチの深さを、ショットキー接合を形成した前記金属電極の面積を所定の面積以上とする深さとし、寄生ショットキーダイオードに流れる電流に対する寄生pnダイオードに流れる電流(寄生pnダイオードに流れる電流/寄生ショットキーダイオードに流れる電流)が1.0以下で、単位セル当たりの前記第2トレンチの底部に位置する前記第1半導体領域の幅とショットキー接合が形成されている部分の前記第2トレンチの幅との比(P/S、但し、P:寄生pnダイオード、S:寄生ショットキーダイオード)を0.4以上としたことを特徴とする半導体装置の製造方法。 - 前記第2工程では、前記第2炭化珪素半導体層の内部に、前記第1トレンチの底部およびコーナー部において前記ゲート絶縁膜を介して前記ゲート電極に対向する第2導電型の第3半導体領域をさらに選択的に形成することを特徴とする請求項9に記載の半導体装置の製造方法。
- 前記第6工程では、前記第2トレンチの深さを、1.8μm以上3.0μm以下とすることを特徴とする請求項9または10に記載の半導体装置の製造方法。
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