JP2023026911A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 148
- 238000011084 recovery Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
図1は、実施の形態1に係る半導体装置100の断面図である。半導体装置100は、IGBT領域10と、ダイオード領域20とを有する基板を備える。半導体装置100は、RC-IGBT(Reverse Conducting IGBT)である。IGBT領域10およびダイオード領域20を合わせてセル領域と呼ぶ。セル領域の周囲には、半導体装置100の耐圧保持のために図示しない終端領域が設けられている。
図3は、実施の形態2に係る半導体装置300の断面図である。半導体装置300は第1部分20aの構造が半導体装置100と異なる。他の構成は半導体装置100の構成と同じである。半導体装置300の第1部分20aは、最上層にp型アノード層25とショットキー接触層40とを有する。ショットキー接触層40にはn型のP(リン)が注入されていても良い。
図4は、実施の形態3に係る半導体装置400の断面図である。半導体装置400はダイオード領域20の構造が半導体装置100と異なる。他の構成は半導体装置100の構成と同じである。半導体装置400において、第1部分20aは最上層にp型アノード層25を有し、第3部分20cは、最上層にショットキー接触層40を有する。
図5は、実施の形態4に係る半導体装置500の断面図である。半導体装置500において、第1部分20aと第2部分20b、第3部分20cとを繋ぐ基板の側面は、酸化膜42に覆われている。他の構造は半導体装置400の構造と同じである。
図6は、実施の形態5に係る半導体装置600の断面図である。半導体装置600では、第1部分20aと第2部分20bとを繋ぐ基板の側面は、外側に凸の曲面から形成される。他の構成は半導体装置100の構成と同じである。このような段差部の形状は、例えば等方性エッチングで形成できる。また、マスクパターンの細さを位置により変更して、エッチングの深さを調整することができる。
図7は、実施の形態6に係る半導体装置700の断面図である。ダイオード領域20は、基板の裏面側にn+型カソード層26を有する。半導体装置700において、n+型カソード層26は間引かれている。なお、図7では基板の上面側の構造として実施の形態2の構造が採用されているが、他の実施の形態の構造が採用されても良い。
図8は、実施の形態7に係る半導体装置800の断面図である。本実施の形態では、n+型カソード層26の構造が実施の形態6と異なる。半導体装置800においてn+型カソード層26は、第1部分20aのp型アノード層25の直下を避けて設けられる。なお、図8では基板の上面側の構造として実施の形態3の構造が採用されているが、他の実施の形態の構造が採用されても良い。
Claims (15)
- IGBT領域と、ダイオード領域と、を有する基板と、
前記基板の上面に設けられた表面電極と、
前記基板の上面と反対側の裏面に設けられた裏面電極と、
を備え、
前記ダイオード領域は、前記基板の上面が凹むことで前記IGBT領域よりも薄く形成された第1部分と、前記第1部分の一方の側に設けられ前記第1部分よりも厚い第2部分と、を有することを特徴とする半導体装置。 - 前記ダイオード領域は、前記第1部分の他方の側に設けられ前記第1部分よりも厚い第3部分を有することを特徴とする請求項1に記載の半導体装置。
- 前記ダイオード領域のアノード層は、前記第1部分の上面、および、前記第1部分と前記第2部分とを繋ぐ前記基板の側面に沿って設けられることを特徴とする請求項1または2に記載の半導体装置。
- 前記アノード層のうち、前記第1部分の上面に沿って設けられた部分と、前記第1部分と前記第2部分とを繋ぐ前記基板の側面に沿って設けられた部分は、離れていることを特徴とする請求項3に記載の半導体装置。
- 前記第2部分は前記IGBT領域と隣接し、
前記第2部分の上面と前記IGBT領域の上面は同一平面を形成することを特徴とする請求項1から4の何れか1項に記載の半導体装置。 - 前記IGBT領域は前記基板の裏面側にコレクタ層を有し、
前記コレクタ層は、前記ダイオード領域にはみ出していることを特徴とする請求項1から5の何れか1項に記載の半導体装置。 - 前記第1部分は、最上層にアノード層とショットキー接触層とを有することを特徴とする請求項1から6の何れか1項に記載の半導体装置。
- 前記第1部分は最上層にアノード層を有し、
前記第2部分は、最上層にショットキー接触層を有することを特徴とする請求項1から6の何れか1項に記載の半導体装置。 - 前記第1部分と前記第2部分とを繋ぐ前記基板の側面の少なくとも一部は酸化膜に覆われていることを特徴とする請求項1から8の何れか1項に記載の半導体装置。
- 前記第1部分と前記第2部分とを繋ぐ前記基板の側面は、外側に凸の曲面から形成されることを特徴とする請求項1から9の何れか1項に記載の半導体装置。
- 前記ダイオード領域は、前記基板の裏面側にカソード層を有し、
前記カソード層は間引かれていることを特徴とする請求項1から10の何れか1項に記載の半導体装置。 - 前記カソード層は、前記IGBT領域側ほど多く間引かれていることを特徴とする請求項11に記載の半導体装置。
- 前記ダイオード領域は、前記基板の裏面側にカソード層を有し、
前記カソード層は、前記第1部分のアノード層の直下を避けて設けられることを特徴とする請求項1から10の何れか1項に記載の半導体装置。 - 前記基板はワイドバンドギャップ半導体から形成されていることを特徴とする請求項1から13の何れか1項に記載の半導体装置。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料またはダイヤモンドであることを特徴とする請求項14に記載の半導体装置。
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