CN104928654A - 用于无缝特征填充的抑制剂等离子体介导的原子层沉积 - Google Patents

用于无缝特征填充的抑制剂等离子体介导的原子层沉积 Download PDF

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CN104928654A
CN104928654A CN201510088812.0A CN201510088812A CN104928654A CN 104928654 A CN104928654 A CN 104928654A CN 201510088812 A CN201510088812 A CN 201510088812A CN 104928654 A CN104928654 A CN 104928654A
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ald cycle
plasma body
inhibitor
feature
substrate
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CN104928654B (zh
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唐伟
巴特·范·斯查文迪克
钱俊
康胡
阿德里安·拉瓦伊
迪纳什·帕迪
大卫·C·史密斯
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Lam Research Corp
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Lam Research Corp
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  • Chemical Vapour Deposition (AREA)

Abstract

本发明涉及用于无缝特征填充的抑制剂等离子体介导的原子层沉积。用于在衬底处理系统中沉积膜的系统和方法包括在处理室中执行第一原子层沉积(ALD)周期以在包括特征的衬底上沉积膜；在第一ALD周期之后，在处理室中将衬底暴露于抑制剂等离子体达到预定时间段以在特征中生成变化的钝化表面；以及在所述预定时间段之后，在处理室中执行第二ALD周期以在衬底上沉积膜。

Description

用于无缝特征填充的抑制剂等离子体介导的原子层沉积
相关申请交叉参考
本申请要求于2014年2月26日提交的美国临时申请第61/944,871号的权益。上述所参考申请的全部公开内容通过参考并入此处。
技术领域
本公开涉及衬底处理系统，且更具体地涉及用于无缝特征填充的衬底处理系统和方法。
背景技术
这里提供的背景描述是为了总体上描述本公开的背景的目的。在该背景技术部分中所描述的当前列明的发明人的工作以及说明书中的在提交时不能作为现有技术的方面既不明示也不暗示地承认其作为针对本公开的现有技术。
浅沟槽隔离(STI)提供集成电路(IC)中个体晶体管器件之间的电气隔离。STI包括填充有高品质的硅(Si)氧化物膜的沟槽。在一些应用中，沟槽的深宽比(AR)可高达8:1且沟槽的开口可缩小至约20nm。实现无空隙STI填充是重要的，因为膜在后续集成步骤中可能会经受进一步的处理，这可暴露该空隙。在一些实例中，该空隙可能无意中接着被导电材料填充，这可导致芯片上不同导体之间的短路。
在一些应用中，利用高密度等离子体化学气相沉积(HDPCVD)以膜填充STI。但是，对于AR高于4:1的沟槽，HDPCVD氧化物填充STI却无空隙是非常具有挑战性的，即使利用沉积-蚀刻-沉积循环工艺。
现在参考图1A-1D，利用HDPCVD的间隙填充实例被示出。在图1A中，衬底100包括具有侧壁104和底部106的沟槽102。在图1B中，氧化层112(比如SiO2)被沉积。氧化层112通常不具有均匀的厚度。在沟槽开口中通常有尖头114。氧化层112通常在侧壁104的下部120处薄于其它位置(比如沟槽底部120和场区)。在图1C和1D的附加HDPCVD步骤之后，尖头114在沟槽开口处相遇而空隙130产生。空隙130在后续处理过程中引发问题。
虽然新兴的可流动氧化物方法提供了液状物填充表现，但对流动性的要求限制了可达到的膜密度。尽管付出额外成本可使用后沉积致密化方法，但这些方法还未被证明是成功的。由于周围侧壁的约束(这阻止了使可流动氧化物膜完全致密化所需的收缩)，所述替代方法不能使高深宽比结构中的膜致密化。
ALD氧化物可被用于以高品质的Si氧化物膜间隙填充深沟槽。但是，在沉积在侧壁上的膜合并之后，在沟槽的中央通常留下接缝。现在参考图2A-2D，利用ALD的间隙填充实例被示出。在图2A中，衬底200包括具有侧壁204和底部206的沟槽202。在图2B中，氧化层212(比如SiO2)在第一ALD周期中被沉积。由图可见，氧化层212在侧壁上在220处以及在沟槽底部222处是共形的。但是，在图2C和2D的附加ALD周期之后，接缝230产生。接缝230在后续湿法化学处理过程中往往具有高蚀刻速率。
发明内容
本部分提供本公开的总体概要，并非其完整范围或其全部特征的全面披露。
一种用于在衬底处理系统中沉积膜的方法包括在处理室中执行第一原子层沉积(ALD)周期以在包括特征的衬底上沉积膜；在所述第一ALD周期之后，在所述处理室中将所述衬底暴露于抑制剂等离子体达到预定时间段以在特征中生成变化的钝化表面；以及在所述预定时间段之后，在所述处理室中执行第二ALD周期以在所述衬底上沉积膜。
在其它特征中，在执行所述第一ALD周期之前，该方法包括在所述处理室中将所述衬底暴露于所述抑制剂等离子体。所述第一ALD周期和所述第二ALD周期包括在第一预定时间段中将所述衬底暴露于第一反应物；在所述第一预定时间段之后从所述处理室排出反应物；在第二预定时间段中将所述衬底暴露于不同于所述第一反应物的第二反应物；以及在所述第二预定时间段之后从所述处理室排出反应物。
在其它特征中，所述膜包括二氧化硅。将所述衬底暴露于所述抑制剂等离子体包括供应抑制剂气体；激发所述抑制剂等离子体；将所述抑制剂等离子体保持所述预定时间段；以及在所述预定时间段之后，熄灭所述抑制剂等离子体。
在其它特征中，所述抑制剂等离子体随着所述特征的深度减小以渐增方式抑制所述特征中的后续的膜沉积。所述抑制剂等离子体使用分子氮作为抑制剂气体而生成。
在其它特征中，所述特征中的所述变化的钝化表面改善所述特征的自下而上的填充以防止所述特征中的接缝。该方法进一步包括在所述第二ALD周期之后将所述衬底暴露于所述抑制剂等离子体并执行附加ALD周期以自下而上填充所述特征却没有接缝。所述抑制剂等离子体使用选自由分子氮、氩、氦、分子氢、氨或其组合物组成的群组的气体生成。所述特征具有大于4:1的深宽比和小于或等于30纳米的开口。
在其它特征中，所述抑制剂等离子体利用第一等离子体源来产生且所述第一ALD周期利用所述第一等离子体源来执行。所述抑制剂等离子体利用第一等离子体源来产生且所述第一ALD周期利用不同于所述第一等离子体源的第二等离子体源来执行。所述抑制剂等离子体利用第一等离子体源来产生且所述第一ALD周期和所述第二ALD周期在不使用等离子体的情况下执行。
在其它特征中，该方法包括在所述第一ALD周期之前执行一或多个ALD周期，其间不使用抑制剂等离子体。该方法包括使用不同于所述第一ALD周期和所述第二ALD周期的工艺来在执行所述第一ALD周期和所述第二ALD周期之后以材料填充所述特征的至少一部分。所述第一ALD周期和所述第二ALD周期沉积介电膜。所述材料包括不同于所述介电膜的其它介电膜。所述材料包括金属。所述特征包括沟槽。所述特征包括孔。
一种用于沉积膜的衬底处理系统包括处理室，所述处理室包括被配置为支撑包括特征的衬底的基架。气体供应源被配置为选择性地供应原子层沉积(ALD)工艺气体给所述处理室以及选择性地供应抑制剂气体给所述处理室。等离子体发生器被配置为在所述处理室中选择性地产生抑制剂等离子体。控制器被配置为控制所述气体供应源和所述等离子体发生器。所述控制器被进一步配置为在所述处理室中执行第一ALD周期以在所述衬底上沉积膜；在所述第一ALD周期之后，在所述处理室中将所述衬底暴露于利用所述抑制剂气体产生的所述抑制剂等离子体达到预定时间段以在所述特征中生成变化的钝化表面；以及在所述预定时间段之后，在所述处理室中执行第二ALD周期以在所述衬底上沉积膜。
在其它特征中，所述控制器被配置为在执行所述第一ALD周期之前将所述衬底暴露于所述抑制剂等离子体。在所述第一ALD周期和所述第二ALD周期中，所述控制器被配置为将所述衬底暴露于第一反应物达到第一预定时间段；在所述第一预定时间段之后从所述处理室排出反应物；将所述衬底暴露于不同于所述第一反应物的第二反应物达到第二预定时间段；以及在所述第二预定时间段之后从所述处理室排出反应物。
在其它特征中，所述膜包括二氧化硅。当将所述衬底暴露于所述抑制剂等离子体时，所述控制器被配置为供应抑制剂气体；激发所述抑制剂等离子体；将所述抑制剂等离子体保持所述预定时间段；以及在所述预定时间段之后，熄灭所述抑制剂等离子体。
在其它特征中，所述抑制剂等离子体随着所述特征的深度减小以渐增方式抑制所述特征中的后续的膜沉积。所述抑制剂等离子体使用分子氮作为所述抑制气体而生成。所述特征中的所述变化的钝化表面改善所述特征的自下而上的填充以防止所述特征中的接缝。所述控制器被进一步配置为在所述第二ALD周期之后将所述衬底暴露于所述抑制剂等离子体并执行附加ALD周期以自下而上填充所述特征却没有接缝。
在其它特征中，所述抑制剂气体选自由分子氢、氨或其组合物组成的群组。所述特征具有大于4:1的深宽比和小于或等于30纳米的开口。
通过此处所提供的描述，进一步的应用领域会变得显而易见。本概要中的描述和具体实施例仅仅旨在说明的目的而非旨在限制本公开的范围。
附图说明
图1A-1D示出了根据现有技术使用HDPCVD的沟槽间隙填充的一实施例；
图2A-2D示出了根据现有技术使用ALD的沟槽间隙填充的一实施例；
图3是根据本公开的用于沟槽间隙填充的衬底处理系统的一实施例的功能框图。
图4示出了利用抑制剂等离子体对衬底进行的定向轰击；
图5A-5D示出了根据本公开使用ALD和抑制剂等离子体的沟槽间隙填充的一实施例；以及
图6和7示出了使用ALD和抑制剂等离子体进行沟槽间隙填充的方法的实施例。
在附图中，参考标号可重复使用以标识相似和/或相同的元件。
具体实施方式
本公开描述了用于填充衬底上的特征的系统和方法。在一些实施例中，所述特征形成于衬底的场区下面。在一些实施例中，使用原子层沉积(ALD)工艺消除在间隙填充期间形成在孔或沟槽(例如浅沟槽绝缘体(STI))中的接缝。尽管STI应用已被公开，但本发明适用于需要特征填充的其它应用，例如但不限于，预金属电介质、3DNAND、深沟槽等。本文所述的系统和方法在ALD工艺期间，通过在于特征填充过程中执行的至少一些ALD周期之间将衬底暴露于抑制剂等离子体，增强自下而上的特征填充。
在一些实施例中，特征基本上通过ALD周期填充。在其他实施例中，特征不是完全通过ALD周期填充，并且其它材料被用于填充特征。其它材料的实施例包括具有不同成分的金属或电介质。
抑制剂等离子体创建钝化表面，并增加所沉积的ALD膜的成核屏障。当抑制剂等离子体与特征中的材料相互作用时，由于几何遮蔽效应，因此，相比位置更接近特征或场的顶部的材料，在特征底部的材料接受少得多的等离子体处理。其结果是，在特征顶部的沉积被选择性地抑制，而在特征底部的沉积在进行中受到较少的抑制或没有受到抑制。其结果是，自下而上的填充被增强，从而创建了减轻接缝效果的较有利的倾斜轮廓。
在一些实施例中，分子氮(N2)可以用作抑制剂等离子体的源气体，尤其是当沉积膜为SiO2时。如可以理解的，ALD的SiO2在氮化物表面上以较慢的速率成核。在其它实施例中，所述抑制剂等离子体源气体选自由N2、氩(Ar)、氦(He)、分子氢(H2)、氨(NH3)，或它们的组合物组成的群组。
本文所描述的系统和方法使得ALD的Si氧化物处理可以在STI或其它应用中使用。由于共形沉积的性质，因此相比HDPCVD氧化物，利用N2抑制剂等离子体的ALD氧化物处理能够填充难处理得多的结构，例如具有更高的AR或更窄的特征尺寸的那些结构。在一些实施例中，AR大于或等于4:1、6:1或8:1。在一些实施例中，特征开口小于或等于30纳米、25纳米或20纳米。就湿法蚀刻耐性和破损行为而言，相比可流动氧化物处理，利用抑制剂等离子体的ALD氧化物处理提供了改善的膜质量。
现在参考图3，示出用于执行ALD沉积的系统300的一实施例。该系统300包括处理室324，处理室324包围系统300的其他部件，并包含RF等离子体。RF等离子体可通过电容式发生器产生。例如，喷头314可连接到RF导线，而加热器块320可以接地，反之亦然。替代地，也可以使用其它类型的等离子体发生器，如感应式等离子体发生器，或远程等离子体发生器，如等离子体管。在这个实施例中，高频RF发生器302和低频RF发生器304被连接到匹配网络306并被连接到喷头314。通过匹配网络306供给的功率和频率足以从工艺气体产生RF等离子体。
基架318支撑衬底316。基架318一般包括卡盘、叉、或升降销以在沉积和/或等离子体处理反应期间以及在沉积和/或等离子体处理反应之间保持并传送衬底。卡盘可以是静电卡盘、机械卡盘或其它类型的卡盘。工艺气体经由入口312引入。多个源气体管线310连接到歧管308。气体可以预先混合或可以不预先混合。适当的阀和质量流量控制机构被用来确保在工艺的沉积和等离子体处理阶段期间输送适当的气体。
工艺气体经由出口322排出室324。真空泵326将工艺气体抽出并通过诸如节流阀或摆阀之类的流量限制装置保持系统内的合适的低压。控制器340可以被提供来监控工艺参数并对气体混合物、等离子体、基架加热、卡盘和/或从处理室去除反应物进行控制。
在一些实施例中，ALD周期可包括等离子体增强ALD(PEALD)。如果使用PEALD，用于ALD周期和抑制等离子体的等离子体源可以是相同的等离子体源。在其它实施例中，可使用不同的等离子体源。对于抑制剂等离子体，具有一定的方向性会是理想的，而对于沉积源，具有很少或没有方向性会是理想的。换言之，可以有2种等离子体源，或1种共用的等离子体源，或仅用于抑制剂等离子体的1种等离子体源。
现在参考图4，在启动ALD之前和/或在至少两个连续的ALD周期之间，根据本公开的系统和方法使衬底400暴露于抑制剂等离子体。抑制剂等离子体增强自下而上的间隙填充并改善高湿法蚀刻率耐性。抑制剂等离子体创建钝化表面，并增加所沉积的ALD膜的成核屏障。当抑制剂等离子体与特征402中的材料相互作用时，由于几何遮蔽效应，因此，相比位置更接近特征或场的顶部的材料，在特征402的底部406的材料接受少得多的等离子体处理。其结果是，在特征顶部的沉积被选择性地抑制，而在特征底部的沉积在进行中受到较少的抑制(例如，沿着侧壁404)或没有受到抑制(例如，在底部406)。其结果是，自下而上的填充被增强，从而创建了减轻接缝效果的较有利的倾斜轮廓。
如可从图4看出的，由抑制剂等离子体生成的钝化表面在场和上部特征区域中被增强，并随着进入特征的距离增加而减弱。如可以理解的，在每个后续的ALD周期之后，类似的图案在所沉积的层上通过抑制剂等离子体创建。以这种方式，在特征顶部的沉积被选择性地抑制，而在特征其它部分的沉积在进行中受到较少的抑制或没有受到抑制。其结果是，自下而上的填充被增强，从而创建了减轻接缝效果的较有利的倾斜轮廓。
现在参考图5A-5D，示出了根据本公开的通过使用ALD、利用抑制剂等离子体进行间隙填充的一实施例。在图5A中，衬底500包括具有侧壁504和底部506的特征502。衬底500可在第一ALD周期前用抑制剂等离子体进行处理。图5B示出了氧化物层512，如通过第一ALD周期沉积的SiO2。更多的膜沉积在特征底部522和侧壁504的下部520。氧化物层112在诸如场之类的区域中具有减小的厚度，并且具有随着特征502的深度增加而增大的厚度。在图5C和5D所示出的附加ALD周期之后，衬底500的间隙填充在无接缝的情况下完成。
现在参考图6，示出了使用抑制剂处理的ALD方法600的一实施例。在608，在第一ALD周期之前，将衬底任选地暴露于抑制剂等离子体，或者在不含抑制剂等离子体的情况下，执行一个或多个ALD周期。在610，执行ALD周期。在一些实施例中，每个ALD周期可包括暴露于第一反应物持续第一预定时间段并在第一预定时间段之后通过吹扫或抽排去除反应物、暴露于第二反应物持续第二预定时间段并在第二预定时间段之后通过吹扫或抽排去除反应物。如果前述ALD周期在614完成，那么，接着在618将衬底暴露于抑制剂等离子体。在622，任选地通过吹扫或抽排从处理室去除反应物。在626，如果有剩余的至少两个ALD周期，则在610重复该过程。否则，该过程继续进行到630，并完成最后的ALD周期。在632，可任选执行无抑制剂等离子体的附加ALD周期以完全或部分地填充特征和/或可用不同的材料填充特征的至少一部分。
现在参考图7，示出了用于供应抑制剂等离子体的方法650的一实施例。在654中，抑制剂气体被供应到处理室中。在658，在室内激发等离子体。在660，当定时器已到时，在664，控制熄灭等离子体。正如可以理解的，等离子体可以以不同的方式产生。如果使用PEALD，则类似的方法用于激发等离子体，但在654，是供给等离子体工艺气体，而不是抑制剂气体。
前面的描述在本质上仅仅是说明性的并且绝不旨在限制本公开、其应用或用途。本公开的广泛教导可以以多种形式来实现。因此，虽然本公开包括特定实施例，但本公开的真实范围不应受限于此，因为在研究附图、说明书和随附权利要求书后，其它的修改方案将变得显而易见。如本文所用，短语“A、B和C中的至少一个”应该被理解为是指使用非排他性逻辑“或”(OR)的逻辑(A或B或C)。应当理解的是，方法中的一个或多个步骤可以以不同的顺序(或同时)执行，而不改变本公开的原理。
在本申请中，包括下面的定义，术语控制器可以被替换为术语电路。术语控制器可以指以下器件、以下器件的一部分、或包括以下器件：专用集成电路(ASIC)；数字、模拟或混合模拟/数字分立电路；数字、模拟或混合模拟/数字集成电路；组合逻辑电路；现场可编程门阵列(FPGA)；执行代码的处理器(共享的、专用的或群组的)；存储由处理器执行的代码的存储器(共享的、专用的或群组的)；提供所描述的功能的其它合适的硬件组件；或上述器件的部分或全部的组合，如在片上系统(system-on-chip)。
如上述使用的术语代码可以包括软件、固件和/或微代码，并且可以指程序、例程、函数、类和/或对象。术语共享处理器包括执行来自多个控制器的部分或全部代码的单个处理器。术语群组处理器包括与另外的处理器组合来执行来自一个或多个控制器的一些或全部代码的处理器。术语共享存储器包括存储来自多个控制器的部分或全部代码的单个存储器。术语群组存储器包括与另外的存储器组合来存储来自一个或多个控制器的一些或全部代码的存储器。术语存储器可以是术语计算机可读介质的子集。如本文所使用的术语计算机可读介质不包括通过介质(例如在载波上)传播的暂时性的电信号或电磁信号；因此术语计算机可读介质可以被认为是有形的和非暂时性的。非暂时性的有形计算机可读介质的非限制性实施例包括非易失性存储器(如闪存)、易失性存储器(例如静态随机存取存储器和动态随机存取存储器)、磁存储器(例如磁带或硬盘驱动器)和光学存储器。
本申请中描述的装置和方法可以部分或完全通过由一个或多个处理器执行的一个或多个计算机程序来实现。这些计算机程序包括存储在至少一个非暂时性的有形计算机可读介质上的处理器可执行指令。这些计算机程序也可以包括和/或依赖于所存储的数据。

Claims (38)

1.一种用于在衬底处理系统中沉积膜的方法，包括：
在处理室中执行第一原子层沉积(ALD)周期以在衬底上在特征中沉积膜；
在所述第一ALD周期之后，在所述处理室中将所述衬底暴露于抑制剂等离子体达到预定时间段以在所述特征中生成变化的钝化表面；以及
在所述预定时间段之后，在所述处理室中执行第二ALD周期以在所述衬底上沉积膜。
2.如权利要求1所述的方法，进一步包括，在执行所述第一ALD周期之前，在所述处理室中将所述衬底暴露于所述抑制剂等离子体。
3.如权利要求1所述的方法，其中所述第一ALD周期和所述第二ALD周期包括：
在第一预定时间段中将所述衬底暴露于第一反应物；
在所述第一预定时间段之后从所述处理室排出反应物；
在第二预定时间段中将所述衬底暴露于不同于所述第一反应物的第二反应物；以及
在所述第二预定时间段之后从所述处理室排出反应物。
4.如权利要求1所述的方法，其中所述膜包括二氧化硅。
5.如权利要求1所述的方法，其中将所述衬底暴露于所述抑制剂等离子体包括：
供应抑制剂气体；
激发所述抑制剂等离子体；
将所述抑制剂等离子体保持所述预定时间段；以及
在所述预定时间段之后，熄灭所述抑制剂等离子体。
6.如权利要求1所述的方法，其中所述抑制剂等离子体随着所述特征的深度减小以渐增方式抑制所述特征中的后续的膜沉积。
7.如权利要求1所述的方法，其中所述抑制剂等离子体使用分子氮作为抑制剂气体而生成。
8.如权利要求1所述的方法，进一步包括在所述第二ALD周期之后将所述衬底暴露于所述抑制剂等离子体并执行附加ALD周期以自下而上填充所述特征却没有接缝。
9.如权利要求1所述的方法，其中所述抑制剂等离子体使用选自由分子氮、分子氢、氩、氦、氨或其组合物组成的群组的气体生成。
10.如权利要求1所述的方法，其中所述特征具有大于4:1的深宽比和小于或等于30纳米的开口。
11.如权利要求1所述的方法，其中所述抑制剂等离子体利用第一等离子体源来产生且所述第一ALD周期利用所述第一等离子体源来执行。
12.如权利要求1所述的方法，其中所述抑制剂等离子体利用第一等离子体源来产生且所述第一ALD周期利用不同于所述第一等离子体源的第二等离子体源来执行。
13.如权利要求1所述的方法，其中所述抑制剂等离子体利用第一等离子体源来产生且所述第一ALD周期和所述第二ALD周期在不使用等离子体的情况下执行。
14.如权利要求1所述的方法，进一步包括在所述第一ALD周期之前执行一或多个ALD周期，其间不使用抑制剂等离子体。
15.如权利要求1所述的方法，进一步包括使用不同于所述第一ALD周期和所述第二ALD周期的工艺来在执行所述第一ALD周期和所述第二ALD周期之后以材料填充所述特征的至少一部分。
16.如权利要求15所述的方法，其中所述第一ALD周期和所述第二ALD周期沉积介电膜且其中所述材料包括不同于所述介电膜的其它介电膜。
17.如权利要求15所述的方法，其中所述材料包括金属。
18.如权利要求1所述的方法，其中所述特征包括沟槽。
19.如权利要求1所述的方法，其中所述特征包括孔。
20.一种用于沉积膜的衬底处理系统，包括：
处理室，其包括被配置为支撑包括特征的衬底的基架；
气体供应源，其被配置为选择性地供应原子层沉积(ALD)工艺气体给所述处理室以及选择性地供应抑制剂气体给所述处理室；
等离子体发生器，其被配置为在所述处理室中选择性地产生抑制剂等离子体；
控制器，其被配置为控制所述气体供应源和所述等离子体发生器，其中所述控制器被进一步配置为：
在所述处理室中执行第一ALD周期以在所述衬底上沉积膜；
在所述第一ALD周期之后，在所述处理室中将所述衬底暴露于利用所述抑制剂气体产生的所述抑制剂等离子体达到预定时间段以在所述特征中生成变化的钝化表面；以及
在所述预定时间段之后，在所述处理室中执行第二ALD周期以在所述衬底上沉积膜。
21.如权利要求20所述的衬底处理系统，其中所述控制器被配置为在执行所述第一ALD周期之前将所述衬底暴露于所述抑制剂等离子体。
22.如权利要求20所述的衬底处理系统，其中在所述第一ALD周期和所述第二ALD周期中，所述控制器被配置为：
将所述衬底暴露于第一反应物达到第一预定时间段；
在所述第一预定时间段之后从所述处理室排出反应物；
将所述衬底暴露于不同于所述第一反应物的第二反应物达到第二预定时间段；以及
在所述第二预定时间段之后从所述处理室排出反应物。
23.如权利要求20所述的衬底处理系统，其中所述膜包括二氧化硅。
24.如权利要求20所述的衬底处理系统，其中当将所述衬底暴露于所述抑制剂等离子体时，所述控制器被配置为：
供应抑制剂气体；
激发所述抑制剂等离子体；
将所述抑制剂等离子体保持所述预定时间段；以及
在所述预定时间段之后，熄灭所述抑制剂等离子体。
25.如权利要求20所述的衬底处理系统，其中所述抑制剂等离子体随着所述特征的深度减小以渐增方式抑制所述特征中的后续的膜沉积。
26.如权利要求20所述的衬底处理系统，其中所述抑制剂等离子体使用分子氮作为所述抑制气体而生成。
27.如权利要求20所述的衬底处理系统，其中所述控制器被进一步配置为在所述第二ALD周期之后将所述衬底暴露于所述抑制剂等离子体并执行附加ALD周期以自下而上填充所述特征却没有接缝。
28.如权利要求20所述的衬底处理系统，其中所述抑制剂气体选自由分子氢、氦、氩、氨或其组合物组成的群组。
29.如权利要求20所述的衬底处理系统，其中所述特征具有大于4:1的深宽比和小于或等于30纳米的开口。
30.如权利要求20所述的衬底处理系统，其中所述抑制剂等离子体利用第一等离子体源来产生且所述第一ALD周期利用所述第一等离子体源来执行。
31.如权利要求20所述的衬底处理系统，其中所述抑制剂等离子体利用第一等离子体源来产生且所述第一ALD周期利用不同于所述第一等离子体源的第二等离子体源来执行。
32.如权利要求20所述的衬底处理系统，其中所述抑制剂等离子体利用第一等离子体源来产生且所述第一ALD周期和所述第二ALD周期在不使用等离子体的情况下执行。
33.如权利要求20所述的衬底处理系统，进一步包括在所述第一ALD周期之前执行一或多个ALD周期，其间不使用抑制剂等离子体。
34.如权利要求20所述的衬底处理系统，进一步包括使用不同于所述第一ALD周期和所述第二ALD周期的工艺来在执行所述第一ALD周期和所述第二ALD周期之后以材料填充所述特征的至少一部分。
35.如权利要求34所述的衬底处理系统，其中所述第一ALD周期和所述第二ALD周期沉积介电膜且其中所述材料包括不同于所述介电膜的其它介电膜。
36.如权利要求34所述的衬底处理系统，其中所述材料包括金属。
37.如权利要求20所述的衬底处理系统，其中所述特征包括沟槽。
38.如权利要求20所述的衬底处理系统，其中所述特征包括孔。
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107045999A (zh) * 2016-02-05 2017-08-15 朗姆研究公司 使用ald和高密度等离子体cvd形成气隙密封件的系统和方法
CN107452671A (zh) * 2016-05-05 2017-12-08 朗姆研究公司 使用电感耦合高密度等离子体进行介电膜的致密化
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CN112400225A (zh) * 2018-07-11 2021-02-23 朗姆研究公司 使用原子层沉积(ald)、抑制剂等离子体和蚀刻的电介质间隙填充
CN113820290A (zh) * 2020-06-17 2021-12-21 东京毅力科创株式会社 成膜方法和成膜装置
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Families Citing this family (355)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
JP6436887B2 (ja) * 2015-09-30 2018-12-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
JP6545094B2 (ja) * 2015-12-17 2019-07-17 東京エレクトロン株式会社 成膜方法及び成膜装置
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
JP6800004B2 (ja) * 2016-02-01 2020-12-16 東京エレクトロン株式会社 シリコン窒化膜の形成方法
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
KR102312824B1 (ko) 2016-03-17 2021-10-13 어플라이드 머티어리얼스, 인코포레이티드 고 종횡비 구조들에서의 갭충전을 위한 방법들
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
KR102092120B1 (ko) * 2016-04-19 2020-03-24 극동대학교 산학협력단 반도체 제조 장치
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
JP6661487B2 (ja) * 2016-07-13 2020-03-11 東京エレクトロン株式会社 シリコン窒化膜の成膜方法
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US9887082B1 (en) * 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) * 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10246774B2 (en) * 2016-08-12 2019-04-02 Lam Research Corporation Additive for ALD deposition profile tuning in gap features
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) * 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10176984B2 (en) 2017-02-14 2019-01-08 Lam Research Corporation Selective deposition of silicon oxide
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
TWI754041B (zh) * 2017-04-18 2022-02-01 日商東京威力科創股份有限公司 被處理體之處理方法
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
JP6832808B2 (ja) * 2017-08-09 2021-02-24 東京エレクトロン株式会社 シリコン窒化膜の成膜方法及び成膜装置
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
KR102597978B1 (ko) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
KR20200118504A (ko) 2018-03-02 2020-10-15 램 리써치 코포레이션 가수분해를 사용한 선택적인 증착
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
TWI811348B (zh) 2018-05-08 2023-08-11 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
CN110544617B (zh) 2018-05-28 2021-11-02 联华电子股份有限公司 周边电路区内的氧化层的制作方法
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
JP2021529254A (ja) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
TWI815915B (zh) 2018-06-27 2023-09-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10727046B2 (en) * 2018-07-06 2020-07-28 Lam Research Corporation Surface modified depth controlled deposition for plasma based deposition
JP7085929B2 (ja) 2018-07-13 2022-06-17 東京エレクトロン株式会社 成膜方法
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
KR20200038184A (ko) 2018-10-01 2020-04-10 에이에스엠 아이피 홀딩 비.브이. 기판 유지 장치, 장치를 포함하는 시스템, 및 이를 이용하는 방법
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
CN113169040A (zh) * 2018-11-30 2021-07-23 朗姆研究公司 用于原子层沉积或化学气相沉积的方法及设备
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TW202037745A (zh) 2018-12-14 2020-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成裝置結構之方法、其所形成之結構及施行其之系統
TW202405220A (zh) 2019-01-17 2024-02-01 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
JP7090568B2 (ja) 2019-01-30 2022-06-24 東京エレクトロン株式会社 成膜方法
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
TW202044325A (zh) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
JP2022527468A (ja) * 2019-03-28 2022-06-02 ラム リサーチ コーポレーション エッチングストップ層
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
CN111799329A (zh) * 2019-04-08 2020-10-20 三星电子株式会社 半导体器件
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11133178B2 (en) 2019-09-20 2021-09-28 Applied Materials, Inc. Seamless gapfill with dielectric ALD films
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
TWI846966B (zh) 2019-10-10 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
TW202142733A (zh) 2020-01-06 2021-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、抬升銷、及處理方法
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
US11101128B1 (en) * 2020-03-12 2021-08-24 Applied Materials, Inc. Methods for gapfill in substrates
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
CN115398032A (zh) * 2020-04-10 2022-11-25 朗姆研究公司 原子层沉积过程中的损失预防
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132576A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐 나이트라이드 함유 층을 형성하는 방법 및 이를 포함하는 구조
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US20230317449A1 (en) * 2020-07-28 2023-10-05 Lam Research Corporation Impurity reduction in silicon-containing films
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
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TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
JP2022142579A (ja) 2021-03-16 2022-09-30 キオクシア株式会社 半導体記憶装置及びその製造方法
KR20220137547A (ko) * 2021-04-02 2022-10-12 에이에스엠 아이피 홀딩 비.브이. 갭 충진 방법과 이와 관련된 시스템 및 소자
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US20220389580A1 (en) * 2021-06-08 2022-12-08 Applied Materials, Inc. Non-conformal plasma induced ald gapfill
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
JP2024536376A (ja) 2021-10-05 2024-10-04 アプライド マテリアルズ インコーポレイテッド 低抵抗率のタングステン特徴を形成するための方法
WO2024006092A1 (en) * 2022-06-27 2024-01-04 Applied Materials, Inc. Method for formation of conformal alp sio2 films
WO2024102763A1 (en) * 2022-11-08 2024-05-16 Lam Research Corporation A robust icefill method to provide void free trench fill for logic and memory applications
WO2024107567A1 (en) * 2022-11-17 2024-05-23 Lam Research Corporation Nonconformal films deposited within a recess using atomic layer deposition

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101071763A (zh) * 2006-05-10 2007-11-14 周星工程股份有限公司 使用振幅调制射频功率的缝隙填充方法及其设备
CN101147247A (zh) * 2005-03-21 2008-03-19 东京毅力科创株式会社 等离子体增强原子层沉积系统和方法
CN101147248A (zh) * 2005-03-21 2008-03-19 东京毅力科创株式会社 等离子体增强原子层沉积系统和方法
CN101278380A (zh) * 2005-06-24 2008-10-01 应用材料公司 利用沉积刻蚀序列的间隙填充处理
CN101528974A (zh) * 2006-10-16 2009-09-09 应用材料股份有限公司 浅沟渠隔离的二氧化硅高品质介电膜的形成：于高纵深比填沟工艺ⅱ（ harpⅱ）使用不同的硅氧烷前体—远端等离子辅助沉积工艺
US20100148301A1 (en) * 2008-12-16 2010-06-17 Elpida Memory, Inc. Semiconductor device and manufacturing method thereof
US20130084700A1 (en) * 2011-10-04 2013-04-04 Imec Method for Selectively Depositing Noble Metals on Metal/Metal Nitride Substrates

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7964505B2 (en) * 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
KR100378186B1 (ko) * 2000-10-19 2003-03-29 삼성전자주식회사 원자층 증착법으로 형성된 박막이 채용된 반도체 소자 및그 제조방법
US6746930B2 (en) * 2001-07-11 2004-06-08 Micron Technology, Inc. Oxygen barrier for cell container process
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
JP4778660B2 (ja) * 2001-11-27 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE10234735A1 (de) * 2002-07-30 2004-02-12 Infineon Technologies Ag Verfahren zum vertikalen Strukturieren von Substraten in der Halbleiterprozesstechnik mittels inkonformer Abscheidung
US8372757B2 (en) * 2003-10-20 2013-02-12 Novellus Systems, Inc. Wet etching methods for copper removal and planarization in semiconductor processing
US7285312B2 (en) * 2004-01-16 2007-10-23 Honeywell International, Inc. Atomic layer deposition for turbine components
US20060068603A1 (en) * 2004-09-30 2006-03-30 Tokyo Electron Limited A method for forming a thin complete high-permittivity dielectric layer
US7476618B2 (en) * 2004-10-26 2009-01-13 Asm Japan K.K. Selective formation of metal layers in an integrated circuit
US20060240187A1 (en) * 2005-01-27 2006-10-26 Applied Materials, Inc. Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
US7648927B2 (en) * 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20080132050A1 (en) * 2006-12-05 2008-06-05 Lavoie Adrien R Deposition process for graded cobalt barrier layers
KR20080112790A (ko) * 2007-06-22 2008-12-26 삼성전자주식회사 반도체 소자의 박막 형성 방법
KR20090011765A (ko) * 2007-07-27 2009-02-02 주식회사 아이피에스 갭-필 능력을 향상시킨 실리콘 산화막 증착 방법
US8017183B2 (en) * 2007-09-26 2011-09-13 Eastman Kodak Company Organosiloxane materials for selective area deposition of inorganic materials
US7799674B2 (en) * 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
KR101069630B1 (ko) * 2008-04-28 2011-10-05 성균관대학교산학협력단 흡착억제제를 이용한 반도체 소자의 금속배선 형성방법
US7611963B1 (en) * 2008-04-29 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a multi-layer shallow trench isolation structure in a semiconductor device
US20100151676A1 (en) * 2008-12-16 2010-06-17 Applied Materials, Inc. Densification process for titanium nitride layer for submicron applications
US7998878B2 (en) * 2009-11-20 2011-08-16 Eastman Kodak Company Method for selective deposition and devices
US9611544B2 (en) * 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8043884B1 (en) * 2010-05-24 2011-10-25 Nanya Technology Corporation Methods of seamless gap filling
US9196473B2 (en) * 2010-12-27 2015-11-24 Hitachi Kokusai Electric Inc. Method of manufacturing an oxynitride film for a semiconductor device
US8883637B2 (en) * 2011-06-30 2014-11-11 Novellus Systems, Inc. Systems and methods for controlling etch selectivity of various materials
WO2013148444A1 (en) * 2012-03-27 2013-10-03 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US20140065838A1 (en) * 2012-08-31 2014-03-06 Carolyn R. Ellinger Thin film dielectric layer formation
US9530674B2 (en) * 2013-10-02 2016-12-27 Applied Materials, Inc. Method and system for three-dimensional (3D) structure fill

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101147247A (zh) * 2005-03-21 2008-03-19 东京毅力科创株式会社 等离子体增强原子层沉积系统和方法
CN101147248A (zh) * 2005-03-21 2008-03-19 东京毅力科创株式会社 等离子体增强原子层沉积系统和方法
CN101278380A (zh) * 2005-06-24 2008-10-01 应用材料公司 利用沉积刻蚀序列的间隙填充处理
CN101071763A (zh) * 2006-05-10 2007-11-14 周星工程股份有限公司 使用振幅调制射频功率的缝隙填充方法及其设备
CN101528974A (zh) * 2006-10-16 2009-09-09 应用材料股份有限公司 浅沟渠隔离的二氧化硅高品质介电膜的形成：于高纵深比填沟工艺ⅱ（ harpⅱ）使用不同的硅氧烷前体—远端等离子辅助沉积工艺
US20100148301A1 (en) * 2008-12-16 2010-06-17 Elpida Memory, Inc. Semiconductor device and manufacturing method thereof
US20130084700A1 (en) * 2011-10-04 2013-04-04 Imec Method for Selectively Depositing Noble Metals on Metal/Metal Nitride Substrates

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108140578B (zh) * 2015-10-23 2022-07-08 应用材料公司 通过表面毒化处理的由下而上的间隙填充
CN108140578A (zh) * 2015-10-23 2018-06-08 应用材料公司 通过表面毒化处理的由下而上的间隙填充
US11028477B2 (en) 2015-10-23 2021-06-08 Applied Materials, Inc. Bottom-up gap-fill by surface poisoning treatment
TWI732795B (zh) * 2015-10-23 2021-07-11 美商應用材料股份有限公司 藉由表面毒化處理由下而上的間隙填充
CN107045999A (zh) * 2016-02-05 2017-08-15 朗姆研究公司 使用ald和高密度等离子体cvd形成气隙密封件的系统和方法
CN107045999B (zh) * 2016-02-05 2023-10-20 朗姆研究公司 使用ald和高密度等离子体cvd形成气隙密封件的系统和方法
CN107452671A (zh) * 2016-05-05 2017-12-08 朗姆研究公司 使用电感耦合高密度等离子体进行介电膜的致密化
CN109478511A (zh) * 2016-07-28 2019-03-15 Asm Ip控股有限公司 用于填充间隙的方法和设备
CN109478511B (zh) * 2016-07-28 2023-10-27 Asm Ip控股有限公司 用于填充间隙的方法和设备
CN108231538A (zh) * 2016-12-09 2018-06-29 圆益Ips股份有限公司 薄膜沉积方法
CN108456870A (zh) * 2017-02-22 2018-08-28 东京毅力科创株式会社 成膜方法以及成膜装置
CN111630203A (zh) * 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
CN112400225A (zh) * 2018-07-11 2021-02-23 朗姆研究公司 使用原子层沉积(ald)、抑制剂等离子体和蚀刻的电介质间隙填充
US12049699B2 (en) 2018-07-11 2024-07-30 Lam Research Corporation Dielectric gapfill using atomic layer deposition (ALD), inhibitor plasma and etching
CN113820290A (zh) * 2020-06-17 2021-12-21 东京毅力科创株式会社 成膜方法和成膜装置
CN115595556A (zh) * 2021-06-28 2023-01-13 韩华株式会社（Kr） 对空隙或接缝的发生进行抑制的基板处理装置以及方法
CN115595556B (zh) * 2021-06-28 2024-09-03 韩华精密机械株式会社 对空隙或接缝的发生进行抑制的基板处理装置以及方法

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