JP6832808B2 - シリコン窒化膜の成膜方法及び成膜装置 - Google Patents
シリコン窒化膜の成膜方法及び成膜装置 Download PDFInfo
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- JP6832808B2 JP6832808B2 JP2017154743A JP2017154743A JP6832808B2 JP 6832808 B2 JP6832808 B2 JP 6832808B2 JP 2017154743 A JP2017154743 A JP 2017154743A JP 2017154743 A JP2017154743 A JP 2017154743A JP 6832808 B2 JP6832808 B2 JP 6832808B2
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- gas
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- rotary table
- silicon nitride
- nitride film
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 89
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 89
- 238000000151 deposition Methods 0.000 title claims description 10
- 230000008021 deposition Effects 0.000 title description 4
- 239000000460 chlorine Substances 0.000 claims description 85
- 229910052801 chlorine Inorganic materials 0.000 claims description 73
- 238000001179 sorption measurement Methods 0.000 claims description 68
- 238000012545 processing Methods 0.000 claims description 59
- 239000002994 raw material Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 54
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 52
- 150000004767 nitrides Chemical class 0.000 claims description 44
- 238000005121 nitriding Methods 0.000 claims description 37
- 238000010926 purge Methods 0.000 claims description 31
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 29
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 28
- 238000002407 reforming Methods 0.000 claims description 25
- 230000005764 inhibitory process Effects 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- 239000002052 molecular layer Substances 0.000 claims description 17
- 230000004048 modification Effects 0.000 claims description 15
- 238000012986 modification Methods 0.000 claims description 15
- 229910021529 ammonia Inorganic materials 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 238000009616 inductively coupled plasma Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 184
- 239000010408 film Substances 0.000 description 153
- 235000012431 wafers Nutrition 0.000 description 109
- 239000012495 reaction gas Substances 0.000 description 55
- 238000000926 separation method Methods 0.000 description 46
- 230000002093 peripheral effect Effects 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000005046 Chlorosilane Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- -1 chlorine ions Chemical class 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
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- C23C16/52—Controlling or regulating the coating process
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Description
前記窪みパターンの底部から上部に向かって吸着量が増加するように塩素ラジカルを吸着させ、第1の吸着阻害領域を形成する工程と、
前記窪みパターンを含む前記基板の表面にシリコン及び塩素を含有する原料ガスを供給し、前記基板の表面の前記第1の吸着阻害領域が形成されていない吸着領域に前記原料ガスを吸着させる工程と、
前記吸着領域に吸着した前記原料ガスをプラズマにより活性化された窒化ガスで窒化し、前記窪みパターンの前記底部から前記上部に向かって膜厚が薄くなるV字の断面形状を有するシリコン窒化膜の分子層を堆積させる工程と、
前記窪みパターンの前記底部から前記上部に向かって吸着量が増加するように前記シリコン窒化膜の分子層上に塩素ラジカルを吸着させ、第2の吸着阻害領域を形成する工程と、
前記窪みパターンを含む前記基板の表面にプラズマにより活性化された窒化ガスを供給し、前記第2の吸着阻害領域を消滅させるとともに前記シリコン窒化膜の分子層を窒化して改質する工程と、を有する。
次に、本発明の実施形態に係るシリコン窒化膜の成膜方法について上述の成膜装置を用いて行う場合を例に挙げて説明する。本実施形態に係るシリコン窒化膜の成膜方法は、基板の表面に形成された窪みパターン内にV字の断面形状を有するシリコン窒化膜をボトムアップ成長により堆積させる成膜工程と、堆積したシリコン窒化膜をプラズマにより活性化された窒化ガスにより改質する改質工程とを含む。
2 回転テーブル
4 凸状部
7 ヒータユニット
11 天板
12 容器本体
15 搬送口
24 凹部
31〜33 反応ガスノズル
41、42 分離ガスノズル
80、90 プラズマ発生器
91 プラズマ生成部
93 シャワーヘッド部
130〜132 ガス供給源
P1〜P3 処理領域
W ウエハ
Claims (16)
- 基板の表面に形成された窪みパターンにシリコン窒化膜を埋め込むシリコン窒化膜の成膜方法であって、
前記窪みパターンの底部から上部に向かって吸着量が増加するように塩素ラジカルを吸着させ、第1の吸着阻害領域を形成する工程と、
前記窪みパターンを含む前記基板の表面にシリコン及び塩素を含有する原料ガスを供給し、前記基板の表面の前記第1の吸着阻害領域が形成されていない吸着領域に前記原料ガスを吸着させる工程と、
前記吸着領域に吸着した前記原料ガスをプラズマにより活性化された窒化ガスで窒化し、前記窪みパターンの前記底部から前記上部に向かって膜厚が薄くなるV字の断面形状を有するシリコン窒化膜の分子層を堆積させる工程と、
前記窪みパターンの前記底部から前記上部に向かって吸着量が増加するように前記シリコン窒化膜の分子層上に塩素ラジカルを吸着させ、第2の吸着阻害領域を形成する工程と、
前記窪みパターンを含む前記基板の表面にプラズマにより活性化された窒化ガスを供給し、前記第2の吸着阻害領域を消滅させるとともに前記シリコン窒化膜の分子層を窒化して改質する工程と、を有するシリコン窒化膜の成膜方法。 - 前記第1の吸着阻害領域を形成する工程、前記原料ガスを吸着させる工程及び前記シリコン窒化膜の分子層を堆積させる工程を成膜工程、前記第2の吸着阻害領域を形成する工程及び前記シリコン窒化膜の分子層を窒化して改質する工程を改質工程としたときに、
前記成膜工程を1回行い、前記改質工程を1回以上の所定回数連続して行うサイクルを1サイクルとし、該1サイクルを複数サイクル繰り返す請求項1に記載のシリコン窒化膜の成膜方法。 - 前記所定回数は、2回以上である請求項2に記載のシリコン窒化膜の成膜方法。
- 第1サイクル目の前記成膜工程の前記第1の吸着阻害領域を形成する工程の前に、前記窪みパターンを含む前記基板の表面をプラズマにより活性化された窒化ガスで窒化して改質するプラズマ改質工程を更に有する請求項2又は3に記載のシリコン窒化膜の成膜方法。
- 前記第1の吸着阻害領域を形成する工程と前記原料ガスを吸着させる工程との間、及び前記原料ガスを吸着させる工程と前記シリコン窒化膜の分子層を堆積させる工程との間に、前記基板の表面にパージガスを供給するパージ工程を更に有する請求項2乃至4のいずれか一項に記載のシリコン窒化膜の成膜方法。
- 前記第2の吸着阻害領域を形成する工程と前記シリコン窒化膜の分子層を窒化して改質する工程との間に、前記基板の表面にパージガスを供給するパージ工程を更に有する請求項5に記載のシリコン窒化膜の成膜方法。
- 前記基板は、処理室内に設けられた回転テーブルの表面上の周方向に沿って載置され、
前記回転テーブルに前記塩素ラジカルを供給可能な塩素ラジカル吸着領域、前記回転テーブルに前記パージガスを可能な第1のパージ領域、前記回転テーブルに前記原料ガスを供給可能な原料ガス吸着領域、前記回転テーブルに前記パージガスを供給可能な第2のパージ領域、前記回転テーブルに前記活性化された窒化ガスを供給可能な窒化領域が前記回転テーブルの前記周方向に沿って前記回転テーブルの上方に設けられ、
前記塩素ラジカル吸着領域で前記塩素ラジカル、前記原料ガス吸着領域で前記原料ガス、前記窒化領域で前記活性化された窒化ガス、及び前記第1及び第2のパージ領域で前記パージガスを供給した状態で前記回転テーブルを回転させて前記成膜工程を実施し、
前記塩素ラジカル吸着領域で前記塩素ラジカル、前記窒化領域で前記活性化された窒化ガス、及び前記第1及び第2のパージ領域で前記パージガスを供給し、前記原料ガス吸着領域で前記原料ガスを供給しない状態で前記回転テーブルを回転させて前記改質工程を実施する請求項5に記載のシリコン窒化膜の成膜方法。 - 前記塩素ラジカルは、シャワーヘッドにより供給される請求項1乃至7のいずれか一項に記載のシリコン窒化膜の成膜方法。
- 前記塩素ラジカルは、リモートプラズマ装置により生成される請求項1乃至8のいずれか一項に記載のシリコン窒化膜の成膜方法。
- 前記活性化された窒化ガスは誘導結合型プラズマにより活性化される請求項1乃至9のいずれか一項に記載のシリコン窒化膜の成膜方法。
- 前記窒化ガスは、アンモニア含有ガスである請求項1乃至10のいずれか一項に記載のシリコン窒化膜の成膜方法。
- 前記原料ガスは、ジクロロシランである請求項1乃至11のいずれか一項に記載のシリコン窒化膜の成膜方法。
- 処理室と、
該処理室内に設けられ、表面上に基板を載置可能な基板載置領域を有する回転テーブルと、
該回転テーブル上に回転方向に沿って所定領域に設けられ、前記回転テーブル上に塩素ラジカルを供給可能な塩素ラジカル供給領域と、
前記回転テーブル上であって、該塩素ラジカル供給領域の前記回転方向における下流側に設けられ、前記回転テーブル上にシリコン及び塩素を含有する原料ガスを供給可能な原料ガス供給領域と、
前記回転テーブル上であって、該原料ガス供給領域の前記回転方向における下流側に設けられ、前記回転テーブル上に活性化された窒化ガスを供給可能な窒化ガス供給領域と、
前記塩素ラジカル供給領域において前記塩素ラジカル、前記原料ガス供給領域において前記原料ガス、及び前記窒化ガス供給領域において前記活性化された窒化ガスを前記回転テーブルに供給して前記回転テーブルを1回転させる成膜工程と、
前記原料ガス供給領域における前記原料ガスの供給を停止するとともに、前記塩素ラジカル供給領域において前記塩素ラジカル、及び前記窒化ガス供給領域において前記活性化された窒化ガスを前記回転テーブルに供給して前記回転テーブルを1回以上の所定回数回転させる改質工程と、
を交互に実行する制御を行う制御手段と、を有する成膜装置。 - 前記制御手段において、前記所定回数は2回以上に設定されている請求項13に記載の成膜装置。
- 前記塩素ラジカル供給領域に前記塩素ラジカルを供給可能なリモートプラズマ装置と、
前記窒化ガス供給領域に前記活性化された窒化ガスを供給可能な誘導型プラズマ発生装置と、を有する請求項13又は14に記載の成膜装置。 - 前記リモートプラズマ装置は、シャワーヘッド部を有し、該シャワーヘッド部から前記塩素ラジカルを供給する請求項15に記載の成膜装置。
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