JP2022527468A - エッチングストップ層 - Google Patents
エッチングストップ層 Download PDFInfo
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- JP2022527468A JP2022527468A JP2021557622A JP2021557622A JP2022527468A JP 2022527468 A JP2022527468 A JP 2022527468A JP 2021557622 A JP2021557622 A JP 2021557622A JP 2021557622 A JP2021557622 A JP 2021557622A JP 2022527468 A JP2022527468 A JP 2022527468A
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- sin
- layer
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- nitride
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- 238000005530 etching Methods 0.000 title claims description 61
- 238000000034 method Methods 0.000 claims abstract description 231
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 151
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 150
- 238000000151 deposition Methods 0.000 claims abstract description 70
- 238000001039 wet etching Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 81
- 150000004767 nitrides Chemical class 0.000 claims description 70
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 54
- 229910052721 tungsten Inorganic materials 0.000 claims description 54
- 239000010937 tungsten Substances 0.000 claims description 54
- 238000012545 processing Methods 0.000 claims description 50
- 230000008021 deposition Effects 0.000 claims description 44
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 238000010586 diagram Methods 0.000 abstract description 29
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 4
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- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
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- 238000003860 storage Methods 0.000 description 3
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
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- 238000009826 distribution Methods 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- YUCFVHQCAFKDQG-UHFFFAOYSA-N fluoromethane Chemical compound F[CH] YUCFVHQCAFKDQG-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
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- -1 silicon nitrides Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- PSCXEUSWZWRCMQ-UHFFFAOYSA-N F[S](F)F Chemical compound F[S](F)F PSCXEUSWZWRCMQ-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 238000000280 densification Methods 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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- 238000012805 post-processing Methods 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
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- 239000000376 reactant Substances 0.000 description 1
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- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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Abstract
Description
本出願の一部として、本明細書と同時にPCT出願願書が提出される。この同時出願されたPCT出願願書にて明記され、本出願が利益または優先権を主張する各出願は、参照によりその全体があらゆる目的で本明細書に組み込まれる。
副層1604―145Å/minよりも大きいWERと、
副層1603および1601―120Å/minより大きいWERと、
副層1602(ES)―40Å/min未満のWERとであってもよい。
いくつかの実施形態では、1つまたは複数の副層は、高いWERの場合後処理を行わずに堆積されてもよい。
PECVD堆積条件を変化させ、100:1のDHFにてWERを変化させた。堆積後の処理は一定にした(10秒、5.5Torr、HF/LF1000/0watt、10000sccmAr/4000sccmHe)。堆積プロセスAとBの両方において、チャンバ圧力は、9Torr、HF/LF575/0watt、プロセスガスがSiH4およびNH3であった。
開示した方法を行うための適切な装置は一般に、プロセス動作を達成するためのハードウェアと上述の方法に従ってプロセス動作を制御するための命令を有するシステムコントローラとを含む。
前述の実施形態は、明確な理解のために多少詳細に説明されてきたが、一定の変更および修正が添付の特許請求の範囲の範囲内で実施されてもよいことは明らかであろう。本実施形態のプロセス、システム、および装置の実施には多くの別の方法があることに留意されたい。したがって、本実施形態は、制限ではなく例示と見なされるべきであり、本実施形態は、本明細書に述べられる詳細に限定されるべきではない。
前述の実施形態は、明確な理解のために多少詳細に説明されてきたが、一定の変更および修正が添付の特許請求の範囲の範囲内で実施されてもよいことは明らかであろう。本実施形態のプロセス、システム、および装置の実施には多くの別の方法があることに留意されたい。したがって、本実施形態は、制限ではなく例示と見なされるべきであり、本実施形態は、本明細書に述べられる詳細に限定されるべきではない。本開示は、以下の形態により実現されてもよい。
[形態1]
方法であって、
露出した水平方向の窒化物表面と露出した酸化物側壁面および窒化物側壁面とを含む階段状のパターンで配置された交互の酸化層および窒化層を有する基板を形成することと、
前記交互の酸化層および窒化層の上に窒化ケイ素(SiN)層を堆積することと、
前記露出した水平方向の窒化物表面上に堆積された前記SiN層を選択的に高密度化するために前記SiN層を処理することと
を含む、方法。
[形態2]
形態1に記載の方法であって、
個別のSiNパッドを形成するために前記処理されたSiN層をウェットエッチングすることをさらに含む、方法。
[形態3]
形態1に記載の方法であって、
前記堆積および処理動作は、同じチャンバ内にて行われる、方法。
[形態4]
形態1に記載の方法であって、
前記SiN層を堆積することは、プラズマ励起化学気相堆積(PECVD)プロセスを含む、方法。
[形態5]
形態1または4に記載の方法であって、
前記SiN層を処理することは、生成された容量結合プラズマに前記基板を曝露することを含む、方法。
[形態6]
形態1に記載の方法であって、
前記堆積および処理動作を行うことは、前記コンフォーマルなSiN層の一部を堆積した後、前記堆積された部分を処理する複数のサイクルを行うことを含む、方法。
[形態7]
形態1に記載の方法であって、
前記コンフォーマルなSiN層は、複数の副層を含み、少なくとも2つの副層は、異なるウェットエッチングレート(WERs)を有する、方法。
[形態8]
形態7に記載の方法であって、
前記複数の副層のうちの1つは、他の副層または前記複数の副層の副層よりも低いWERを有するエッチングストップ(ES)副層である、方法。
[形態9]
形態8に記載の方法であって、
前記ES層は、ウェットエッチング液において50Å/min以下のWERを有する、方法。
[形態10]
形態8または9に記載の方法であって、
前記複数の副層のうちの1つは、ウェットエッチング液において少なくとも100Å/minのWERを有する副層である、方法。
[形態11]
形態9に記載の方法であって、
前記ES副層は、各々が前記ES副層よりも厚く、前記ES副層よりも大きいWERを有する2つの副層との間に配置される、方法。
[形態12]
形態8に記載の方法であって、
前記ES副層は、前記SiN層の最上層である、方法。
[形態13]
形態1に記載の方法であって、
前記SiN膜は、シラン(SiH 4 )およびアンモニア(NH 3 )から堆積される、方法。
[形態14]
形態11に記載の方法であって、
前記SiH 4 およびNH 3 は、窒素(N 2 )をさらに含むプロセスガス内にある、方法。
[形態15]
形態2に記載の方法であって、
個別のSiNパッドは、前記側壁面付近から少なくとも10nmである、方法。
[形態16]
形態2に記載の方法であって、
個別のSiNパッドは、少なくとも10nmの厚さである、方法。
[形態17]
形態1に記載の方法であって、
前記窒化層をタングステンワード線と置き換えることをさらに含む、方法。
[形態18]
形態2に記載の方法であって、
前記SiNパッドをタングステンランディングパッドと置き換えることをさらに含む、方法。
[形態19]
方法であって、
水平面および側壁面を有する基板を形成することと、
前記水平面および側壁面の上に窒化ケイ素(SiN)層を堆積することと、
前記水平面上に堆積された前記コンフォーマルなSiN層を選択的に高密度化するために前記SiN層を処理することと
を含む、方法。
[形態20]
形態19に記載の方法であって、
個別のSiNパッドを形成するために前記処理された層をウェットエッチングすることをさらに含む、方法。
[形態21]
方法であって、
水平面および側壁面を有する基板を形成することと、
1つまたは複数の第1のサイクルを行い、第1の副層を形成することであって、前記1つまたは複数の第1のサイクルの各々は、
PECVDによって前記水平面および側壁面上に一定量のSiNを堆積し、前記堆積された量のSiNを不活性ガスから生成された容量結合プラズマに曝露することと、
1つまたは複数の第2のサイクルを行い、エッチングストップ副層を形成することであって、前記1つまたは複数の第2のサイクルの各々は、
PECVDによって前記第1の副層上に一定量のSiNを堆積し、低周波高周波(LFRF)電力を用いて、前記堆積された量のSiNを不活性ガスから生成された容量結合プラズマに曝露することと
を含む、方法。
[形態22]
形態21に記載の方法であって、
前記1つまたは複数の第2のサイクルにおける前記LFRF電力は、もしあるならば、前記1つまたは複数の第1のサイクルにおける前記LFRF電力よりも大きい、方法。
[形態23]
装置であって、
LFRFプラズマ生成器およびHFRFプラズマ生成器を含むPECVD堆積チャンバと、形態1~22のいずれかの前記方法を行うための命令を含むコントローラと
を備える、装置。
Claims (23)
- 方法であって、
露出した水平方向の窒化物表面と露出した酸化物側壁面および窒化物側壁面とを含む階段状のパターンで配置された交互の酸化層および窒化層を有する基板を形成することと、
前記交互の酸化層および窒化層の上に窒化ケイ素(SiN)層を堆積することと、
前記露出した水平方向の窒化物表面上に堆積された前記SiN層を選択的に高密度化するために前記SiN層を処理することと
を含む、方法。 - 請求項1に記載の方法であって、
個別のSiNパッドを形成するために前記処理されたSiN層をウェットエッチングすることをさらに含む、方法。 - 請求項1に記載の方法であって、
前記堆積および処理動作は、同じチャンバ内にて行われる、方法。 - 請求項1に記載の方法であって、
前記SiN層を堆積することは、プラズマ励起化学気相堆積(PECVD)プロセスを含む、方法。 - 請求項1または4に記載の方法であって、
前記SiN層を処理することは、生成された容量結合プラズマに前記基板を曝露することを含む、方法。 - 請求項1に記載の方法であって、
前記堆積および処理動作を行うことは、前記コンフォーマルなSiN層の一部を堆積した後、前記堆積された部分を処理する複数のサイクルを行うことを含む、方法。 - 請求項1に記載の方法であって、
前記コンフォーマルなSiN層は、複数の副層を含み、少なくとも2つの副層は、異なるウェットエッチングレート(WERs)を有する、方法。 - 請求項7に記載の方法であって、
前記複数の副層のうちの1つは、他の副層または前記複数の副層の副層よりも低いWERを有するエッチングストップ(ES)副層である、方法。 - 請求項8に記載の方法であって、
前記ES層は、ウェットエッチング液において50Å/min以下のWERを有する、方法。 - 請求項8または9に記載の方法であって、
前記複数の副層のうちの1つは、ウェットエッチング液において少なくとも100Å/minのWERを有する副層である、方法。 - 請求項9に記載の方法であって、
前記ES副層は、各々が前記ES副層よりも厚く、前記ES副層よりも大きいWERを有する2つの副層との間に配置される、方法。 - 請求項8に記載の方法であって、
前記ES副層は、前記SiN層の最上層である、方法。 - 請求項1に記載の方法であって、
前記SiN膜は、シラン(SiH4)およびアンモニア(NH3)から堆積される、方法。 - 請求項11に記載の方法であって、
前記SiH4およびNH3は、窒素(N2)をさらに含むプロセスガス内にある、方法。 - 請求項2に記載の方法であって、
個別のSiNパッドは、前記側壁面付近から少なくとも10nmである、方法。 - 請求項2に記載の方法であって、
個別のSiNパッドは、少なくとも10nmの厚さである、方法。 - 請求項1に記載の方法であって、
前記窒化層をタングステンワード線と置き換えることをさらに含む、方法。 - 請求項2に記載の方法であって、
前記SiNパッドをタングステンランディングパッドと置き換えることをさらに含む、方法。 - 方法であって、
水平面および側壁面を有する基板を形成することと、
前記水平面および側壁面の上に窒化ケイ素(SiN)層を堆積することと、
前記水平面上に堆積された前記コンフォーマルなSiN層を選択的に高密度化するために前記SiN層を処理することと
を含む、方法。 - 請求項19に記載の方法であって、
個別のSiNパッドを形成するために前記処理された層をウェットエッチングすることをさらに含む、方法。 - 方法であって、
水平面および側壁面を有する基板を形成することと、
1つまたは複数の第1のサイクルを行い、第1の副層を形成することであって、前記1つまたは複数の第1のサイクルの各々は、
PECVDによって前記水平面および側壁面上に一定量のSiNを堆積し、前記堆積された量のSiNを不活性ガスから生成された容量結合プラズマに曝露することと、
1つまたは複数の第2のサイクルを行い、エッチングストップ副層を形成することであって、前記1つまたは複数の第2のサイクルの各々は、
PECVDによって前記第1の副層上に一定量のSiNを堆積し、低周波高周波(LFRF)電力を用いて、前記堆積された量のSiNを不活性ガスから生成された容量結合プラズマに曝露することと
を含む、方法。 - 請求項21に記載の方法であって、
前記1つまたは複数の第2のサイクルにおける前記LFRF電力は、もしあるならば、前記1つまたは複数の第1のサイクルにおける前記LFRF電力よりも大きい、方法。 - 装置であって、
LFRFプラズマ生成器およびHFRFプラズマ生成器を含むPECVD堆積チャンバと、請求項1~22のいずれかの前記方法を行うための命令を含むコントローラと
を備える、装置。
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