CN104143539A - 用于驱动集成电路的金属凸块结构及其制造方法 - Google Patents

用于驱动集成电路的金属凸块结构及其制造方法 Download PDF

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CN104143539A
CN104143539A CN201410189747.6A CN201410189747A CN104143539A CN 104143539 A CN104143539 A CN 104143539A CN 201410189747 A CN201410189747 A CN 201410189747A CN 104143539 A CN104143539 A CN 104143539A
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metal
bump structure
layer
metal bump
sheath
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CN104143539B (zh
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林久顺
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Himax Technologies Ltd
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Himax Technologies Ltd
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Abstract

本发明公开一种用于驱动集成电路的金属凸块结构及其制造方法。该金属凸块结构包含位于金属焊垫上的护层、位于金属焊垫上又部分位于护层上的黏着层、部分位于凹穴中并覆盖黏着层的金属凸块、以及完全覆盖金属凸块的覆层。覆层具有横向延伸的侧翼，且侧翼位于护层上。

Description

用于驱动集成电路的金属凸块结构及其制造方法
技术领域
本发明涉及一种金属凸块结构及其形成的方法，特别是涉及一种特用于驱动集成电路(IC)的金属凸块结构而免于周遭的大气环境的威胁、在卤素或高电场的存在下也不会发生迦凡尼效应(Galvanic effect)效应，及其形成的方法。
背景技术
在电子电路中，金属凸块用来形成两组电路之间的电连接。为了要降低不可避免的电阻与达成最佳的效果，铜通常是金属凸块材料的第一选择。
一般说来，铜是作为金属凸块理想的材料，因为它的化学性质不活泼，还有着极低的电阻值。然而，在一些应用场合中，作为金属凸块材料的铜却遭受严重的损伤，这是因为在异常的情形或是极端的情况存在之下，会发生迦凡尼效应(Galvanic effect)的缘故。这样的结果对电子电路的可靠性而言是不利的。
还有，由其他金属制成的金属凸块，例如黄金，一旦发生瑕疵时极难加以重工(re-work)，这是因为重工用的王水(aqua regia)是一种腐蚀性极强的药剂。当有瑕疵的金属凸块的电路需要重工时，就很有可能对电子电路的可靠性产生强烈的折损。
发明内容
有鉴于此，本发明首先提出一种金属凸块(metal bump)结构，其可与各向异性导电胶(ACF)一起连结使用，或用于驱动集成电路(driver IC)中。此等金属凸块结构，由于有一层极薄的保护层，在极端环境或是异常环境下基本上不会发生迦凡尼效应(Galvanic effect)。再者此等金属凸块容易重工，而没有损及电子电路可靠性的疑虑。特别是在电镀的过程中会形成横向侧翼。
本发明的金属凸块结构适用于驱动集成电路(driver IC)中，包含金属焊垫、护层、黏着层、金属凸块与护层。护层位于金属焊垫上，并定义出位于金属焊垫上的凹穴。黏着层位于凹穴中、位于金属焊垫上、又部分位于护层上，黏着层又直接接触金属焊垫与护层。金属凸块部分位于凹穴中并覆盖黏着层。覆层完全覆盖金属凸块，而使得金属凸块不会暴露出来。覆层又具有横向延伸的侧翼，且侧翼位于护层上。
在本发明一实施方式中，金属凸块、黏着层、与护层间具有嵌穴(notch)。
在本发明另一实施方式中，覆层为帽盖层或保护层其中的至少一者，且侧翼为对应于帽盖层与护层的帽盖侧翼或保护侧翼其中的至少一者。
在本发明另一实施方式中，护层填入嵌穴中形成T形截面，而使得保护侧翼直接接触黏着层。
在本发明另一实施方式中，保护层由一层的金所组成。
在本发明另一实施方式中，帽盖层填入嵌穴中形成T形截面，而使得帽盖层侧翼直接接触黏着层。
在本发明另一实施方式中，帽盖层由层的钯所组成。
在本发明另一实施方式中，帽盖层夹至于保护层与金属凸块之间，而使得保护侧翼覆盖帽盖层。
在本发明另一实施方式中，金属凸块自行对准于黏着层。
在本发明另一实施方式中，金属凸块包含铜与金其中一者。
在本发明另一实施方式中，覆层自行对准于金属凸块。
在本发明另一实施方式中，卤素或高电场其中至少一者的存在下不发生迦凡尼效应(Galvanic effect)效应。
在本发明另一实施方式中，金属凸块结构位于玻璃覆晶(COG)封装结构或薄膜覆晶(COF)封装结构中。
本发明再提出一种形成金属凸块结构的方法，而可以用于驱动集成电路(driver IC)中。首先，提供底材。底材包含金属焊垫、护层、黏着层、与图案化光致抗蚀剂。护层位于金属焊垫上，并定义出位于金属焊垫上的凹穴。黏着层位于凹穴中，覆盖并直接接触金属焊垫与护层。图案化光致抗蚀剂位于黏着层上，并包含有开口，此开口暴露位于凹穴中与护层上的黏着层。其次，以金属凸块材料填入开口中。然后，移除图案化光致抗蚀剂，使得金属凸块材料成为位于黏着层上的金属凸块。再来，移除没有被金属凸块材料所覆盖的黏着层，同时部分暴露位于下方的护层。继续，形成覆层，以完全覆盖金属凸块。在形成覆层时一并形成了横向延伸的侧翼，且侧翼位于护层上。
在本发明一实施方式中，覆层自行对准于金属凸块。
在本发明另一实施方式中，还要过移除(over-removed)黏着层，以形成位于金属凸块、黏着层、与护层间的嵌穴(notch)。
在本发明另一实施方式中，覆层为帽盖层与保护层其中的至少一者，而侧翼为对应于帽盖层与保护层的帽盖侧翼与保护侧翼其中的至少者。
在本发明另一实施方式中，护层填入嵌穴中形成T形截面，而使得保护侧翼直接接触黏着层。
在本发明另一实施方式中，保护层由一层的金所组成。
在本发明另一实施方式中，帽盖层填入嵌穴中形成T形截面，而使得帽盖层侧翼直接接触黏着层。
在本发明另一实施方式中，帽盖层由一层的钯所组成。
在本发明另一实施方式中，帽盖层夹至于保护层与金属凸块之间，而使得保护侧翼覆盖帽盖层。
在本发明另一实施方式中，金属凸块包含铜与金其中一者。
在本发明另一实施方式中，以电镀将金属凸块材料填入开口中。
在本发明另一实施方式中，以电镀形成覆层。
在本发明另一实施方式中，形成金属凸块结构的方法，还包含熟化金属凸块，而调整其硬度。
附图说明
图1至图6为本发明形成金属凸块结构的方法的示意图；
图7与图7A为本发明金属凸块结构的特征示意图；
图8与图9为本发明金属凸块结构的结构示意图。
具体实施方式
本发明首先提供一种形成金属凸块结构的方法，可以将驱动集成电路芯片(driver IC)与显示器的电路进行电连接，特别适用于金属凸块封装的玻璃覆晶(COG)封装结构与薄膜覆晶(COF)封装结构技术中。图1至图6绘示本发明形成金属凸块结构的方法。首先，在第一方面先说明如何将金属凸块形成在底材上。如图1所绘示，提供底材10。底材10包括金属焊垫11、护层12与黏着层13。
绝缘层9为底材10的基础部分，用来支撑其它的元件，例如用来支撑金属焊垫11、护层12、黏着层13与后续图中的图案化光致抗蚀剂层。金属焊垫11可以是一种质轻的金属材料，例如铝，并经过图案化。但是，其它的金属也可采用，而并不仅限于铝。
护层12即位于金属焊垫11之上，同时还具有定义出凹穴15的图案，使得凹穴15也位于金属焊垫11之上。护层12可以是一种电绝缘的材料，例如是氮化硅、氧化硅或是其组合。通常来说，凹穴15的大小会小于金属焊垫11的大小。
黏着层13又位于凹穴15之中。此外，黏着层13还会覆盖金属焊垫11与护层12，使得黏着层13会直接接触金属焊垫11与护层12。黏着层13用来帮助后续形成的金属凸块材料(图未示)牢牢地附着在凹穴15之中。黏着层13可以是一种合金层，例如钛钨合金层或是钛金属层。
黏着层13的形成方法可以是，利用溅镀一层钛钨合金，与例如铜的晶种层的方法，来均匀地覆盖底材10，例如完全地覆盖金属焊垫11、护层12、与凹穴15的表面。结果例示于图1中。形成图案化光致抗蚀剂层的方式，可以参考如下所示的方式。
如图2所绘示，将一大片光致抗蚀剂层14’整体形成在黏着层13上，并同时填满凹穴15。光致抗蚀剂层14’可以是光敏性的材料，例如是有机的光敏材料。
再来，如图3所绘示，将光致抗蚀剂层14’图案化。图案化光致抗蚀剂层14的方式可以是如下所述。光致抗蚀剂层14形成在黏着层13上来定义出开口16。开口16用来暴露出位于凹穴15中与护层12上的黏着层13，因此，在本发明的一实施例中，开口16会稍微大于凹穴15。换句话说，开口16可以用来定义出后续所形成的金属凸块材料(图未示)所位于的空间，而此空间本身即容置了凹穴15。
然后，整体的光致抗蚀剂层14’又会经过适当的曝光与显影步骤，而转换成图案化光致抗蚀剂层14，而具有曝光与显影所赋与的预定图案。图案是经由开口16所定义出的，其结果即绘示于图3中。
接下来，如图4所绘示，使用金属凸块材料20’来填入开口16中。请注意，金属凸块材料20’可能仅仅只是「填入」开口16中，而没有「填满」开口16。此时，黏着层13即因此夹置于金属凸块材料20’与金属焊垫11之间，以及夹置于金属凸块材料20’与护层12之间。例如，由于金属焊垫11与黏着层13均为导电性材料，所以金属凸块材料20’可以经由电镀的方式来形成。视情况需要，金属凸块材料20’可以使用钯、银、铜或是金，以寻求较佳的导电性，与越低越好的化学活性。
一但将金属凸块材料20’形成好了之后，就不再需要图案化光致抗蚀剂层14了。于是，如图5所绘示，移除图案化光致抗蚀剂层14，使得金属凸块材料20’成为各自独立的金属凸块20。可以使用传统的方式来移除图案化光致抗蚀剂层14。于是，各自独立的金属凸块20，就会完全位于黏着层13之上，并直接接触黏着层13。
由于黏着层13是导电的，这会导致所有的金属凸块20彼此短路，所以多余的黏着层13必须要移除。再来，如图6所绘示，没有被金属凸块20所覆盖的黏着层13经由蚀刻步骤来移除，又部分地暴露出下方的护层12，使得所有的金属凸块20，通过电绝缘材料，亦即护层12的隔离，成为彼此电绝缘。如此一来，所有的金属凸块20即自我对准于黏着层13。例如，可以使用过氧化氢来蚀刻黏着层13的钛钨合金。
视情况需要，蚀刻步骤之后还可以进行加热金属凸块20的熟化，来调整金属凸块20达到所需的硬度。例如，在250至300℃而维持大约30分钟的退火条件，来将金属凸块20的硬度降到理想的程度。一般说来，较低的硬度需要较高的熟化温度与较短的熟化时间，而较高的硬度需要较低的熟化温度与较长的熟化时间，来将金属凸块20调整到所需的适当硬度，例如不超过130维氏硬度(Hv)，较佳者不大于110维氏硬度，更佳者介于50维氏硬度至110维氏硬度之间。
此时可以注意到在图6中，在移除黏着层13时，在金属凸块20、黏着层13、与护层12之间形成了一只嵌穴30，因为蚀刻步骤不只会完全移除没有被金属凸块20所覆盖的黏着层13，蚀刻步骤也可能会更进一步移除没有被金属凸块20所覆盖的黏着层13以外其他的黏着层13，例如，夹置于金属凸块20、与护层12间的黏着层13’。而结果是，在金属凸块20、黏着层13、与护层12之间便形成了一只嵌穴30，而成为本发明结构的特征之一。在有嵌穴30存在时，金属凸块20会几乎覆盖所有的黏着层13’。另外，嵌穴30则可能横向地深入1微米(μm)-2微米左右。
还可以进行一视情况需要的湿式清洁步骤来清洁金属凸块20的表面，较佳者会移除金属凸块20表面的氧化物，使得后续步骤的覆层比较容易形成与黏着。在视情况需要的湿式清洁步骤之后，还可以进行一视情况需要的冲洗步骤，在需要时，来冲洗金属凸块20的表面。
在形成覆层之前，还可以进行一视情况需要的活化步骤，在需要时，来活化金属凸块20的表面，使得后续步骤的覆层比较容易形成与黏着。活化步骤可以是湿式步骤，并且在硫酸化合物的存在下进行。在视情况需要的活化步骤之后，还可以进行另一次视情况需要的冲洗步骤，在需要时，来冲洗活化后的金属凸块20的表面。
由于各自独立的金属凸块20，仍然可能因为暴露于周围的大气环境中而失之脆弱，所以需要再特意形成覆层来尽可能地覆盖金属凸块20，使得金属凸块20尽量不会暴露于周围的大气环境中。请参考图7所绘示，形成帽盖层40来完全覆盖金属凸块20，并延伸至嵌穴30中，而在有嵌穴30下得到了理想的金属凸块结构1。换句话说，帽盖层40即自行对准于金属凸块20。在本发明一实施方式中，形成帽盖层40来完全覆盖金属凸块20，但是在填满嵌穴30下不会形成附带的合金。
视情况需要的帽盖层40可以包含多种保护性的材料。如果是铜制成的金属凸块20，帽盖层40可以包含锡、镍、金、钯其中至少一者。如果是金制成的金属凸块20，帽盖层40可以包含锡、镍、钯其中至少一者。如果是银制成的金属凸块20，帽盖层40可以包含锡。如果是钯制成的金属凸块20，帽盖层40可以包含锡。帽盖层40也可以不含镍。不过，所形成帽盖层40可能只会至少减小嵌穴30的尺寸，或是如图7所绘示，因为完全填满了嵌穴30，使得嵌穴30消失不见。
值得注意的是，形成视情况需要的帽盖层40还会附带地形成位于底材10上、横向延伸的帽盖侧翼41，特别是会与护层12直接接触，如图7所绘示。帽盖侧翼41的横向尺寸可能会大于帽盖层40的厚度。例如，帽盖层40的厚度可以是0.3微米(μm)，帽盖侧翼41的横向尺寸可以是3微米，而大了大约10倍之多。
较佳者，可以经由浸入式电镀法来形成帽盖层40。可以在特别的环境下来进行浸入式电镀，来控制帽盖层40的成长速率为大约0.05微米/分钟，使得帽盖层40最终的厚度为0.4微米-0.05微米左右。例如，浸入式电镀可以是湿式步骤，在大约中性的酸碱值、升温与硫酸盐的辅助下进行浸入式电镀。升温的环境可以是大约40至85摄氏度。形成帽盖层40的条件则例举于表1中。视情况需要，在表1中的每个步骤之后，还可以进行视情况需要的冲洗步骤。在视情况需要的帽盖层40形成之后，有需要时，还可以进行另一次的冲洗步骤来冲洗帽盖层40的表面。
表1
电镀步骤 温度(℃) 酸碱(pH)值 时间(秒)
金属凸块清洁步骤 室温 小于7 30-60
酸处理步骤 室温 小于1 30-120
活化晶种步骤 室温 1.1-2 60-360
镀钯步骤 50-54 6～8 600-1200
镀镍步骤 50-54 6～8 600-1200
镀金步骤 85 4.7-5.3 1200以内
在本发明的另一实施例中，又可以进行视情况需要的熟化(curing)步骤，来形成合金。例如，请参考图7A所绘示，形成在金属凸块20上的帽盖层40被加热到，例如在150℃～180℃与30分钟到60分钟的条件下，与金属凸块20形成合金42。铜与锡在不同的条件下，可以形成多种的合金，例如Cu3Sn、Cu6Sn5、Cu41Sn11、或是Cu10Sn3。
合金41的形成，刻意用来防止金属凸块20在极端的情形下可能穿过帽盖层40。在帽盖层40的保护下，不管有或是没有合金42，金属凸块20都不会暴露于周围的大气环境中，所以在卤素及/或高电场的存在下也不会发生迦凡尼效应(Galvanic effect)效应。
在本发明中，帽盖层40是直接形成在金属凸块20上的，例如钯层在铜块上，中间则没有其他层安插其中，例如镍层。由于镍比铜硬，一但将镍引入来辅助后续层能够黏附在上金属凸块结构1时，金属凸块结构1的最终硬度会大到失去实际价值。例如有镍存在时，金属凸块结构1的最终硬度会大到超过130维氏硬度(Hv)，这是不理想的。
再来，如图8所绘示，当视情况需要的帽盖层40存在时，还可以再形成保护层50来完全覆盖帽盖层40，来得到理想的金属凸块结构1。当视情况需要的帽盖层40存在时，形成保护层50直接位于帽盖层40上。如果是铜制成的金属凸块20，保护层50由一层尽量薄的金所组成。请注意，形成视情况需要的保护层50时也会附带地形成位于帽盖层40上、横向延伸的保护侧翼51，特别是会直接接触帽盖层40与护层12，如图8所绘示。合金是否存在与保护侧翼41是否存在无关。
要不然，如图9所绘示，当视情况需要的帽盖层40存在时，形成保护层50直接位于帽盖层40上。如果是铜制成的金属凸块20，保护层50由一层尽量薄的金所组成。请注意，形成视情况需要的保护层50时也会附带地形成位于帽盖层40上、横向延伸的保护侧翼41，特别是会直接接触帽盖层40与护层12，如图8所绘示。合金是否存在与保护侧翼41是否存在无关。
当视情况需要的帽盖层40不存在时，就在没有帽盖层40的情况下形成保护层50，而直接并完整地覆盖金属凸块20，来得到理想的金属凸块结构1。如果是铜制成的金属凸块20，保护层50由一层尽量薄的金所组成。请注意，形成视情况需要的保护层50时也会附带地形成位于底材10上、横向延伸的保护侧翼51，特别是会直接接触护层12，如图9所绘示。保护层50也可能会与金属凸块20形成合金。
可以经由无电极电镀法来形成保护层50。可以在特别的环境下来进行无电极电镀，来控制保护层50的成长速率为大约0.006微米/分钟，使得保护层50最终的厚度为0.4微米-0.05微米左右。例如，无电极电镀可以是湿式步骤，以传统的方式进行。由于保护层50是尽量薄的，保护性金属，例如黄金，的耗用就可以尽量的少来降低生产成本。再者，此等金属凸块容易重工，而没有损及电子电路可靠性的疑虑，因为保护层50是尽量薄的，所以当金属凸块需要重工时容易移除。
刻意形成的保护层50，来完整地覆盖视情况需要的帽盖层40、视情况需要的帽盖侧翼41或是只有金属凸块20，用来防止金属凸块20免于迦凡尼效应(Galvanic effect)效应。在保护层50的保护下，即使在卤素及/或高电场的存在下，不管有或是没有合金，金属凸块20都不会暴露于周围的大气环境中。
所得的金属凸块结构1适用于金属凸块封装的玻璃覆晶(COG)封装结构与薄膜覆晶(COF)封装结构技术中。因此，本发明的金属凸块结构，可以用于驱动集成电路芯片(driver IC)将驱动集成电路芯片与显示器的电路进行电连接。
以上所述仅为本发明的优选实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (26)

1.一种金属凸块结构，其用于一驱动集成电路中并包含：
金属焊垫；
护层，位于该金属焊垫上，并定义出位于该金属焊垫上的一凹穴；
黏着层，完全位于该凹穴中、位于该金属焊垫上、又部分位于该护层上，其中该黏着层直接接触该金属焊垫以及该护层；
金属凸块，填入该凹穴中并覆盖该黏着层；以及
覆层，完全覆盖该金属凸块，而使得该金属凸块不会暴露出来，其中该覆层具有横向延伸的一侧翼，且该侧翼位于该护层上。
2.如权利要求1所述的金属凸块结构，其中该金属凸块、该黏着层、与该护层间具有一嵌穴。
3.如权利要求2所述的金属凸块结构，其中该覆层为一帽盖层与一保护层其中的至少一者，且该侧翼为对应于该帽盖层与该护层的一帽盖侧翼与一保护侧翼其中的至少一者。
4.如权利要求3所述的金属凸块结构，其中该护层填入该嵌穴中形成一T形截面，而使得该保护侧翼直接接触该黏着层。
5.如权利要求3所述的金属凸块结构，其中该保护层由一层的金所组成。
6.如权利要求3所述的金属凸块结构，其中该帽盖层填入该嵌穴中形成一T形截面，而使得该帽盖层侧翼直接接触该黏着层。
7.如权利要求3所述的金属凸块结构，其中该帽盖层由一层的钯所组成。
8.如权利要求6所述的金属凸块结构，其中该帽盖层夹至于该保护层与该金属凸块之间，而使得该保护侧翼覆盖该帽盖层。
9.如权利要求1所述的金属凸块结构，其中该金属凸块自行对准于该黏着层。
10.如权利要求1所述的金属凸块结构，其中该金属凸块包含铜与金其中一者。
11.如权利要求1所述的金属凸块结构，其中该覆层自行对准于该金属凸块。
12.如权利要求1所述的金属凸块结构，在卤素与一高电场其中至少一者的存在下不发生迦凡尼效应效应。
13.如权利要求1所述的金属凸块结构，位于玻璃覆晶封装结构与薄膜覆晶封装结构其中一者中。
14.一种形成一种金属凸块结构的方法，而用于一驱动集成电路中，其包含：
提供一底材，其包含：
金属焊垫；
护层，位于该金属焊垫上，并定义出位于该金属焊垫上的一凹穴；
黏着层，位于该凹穴中、覆盖并直接接触该金属焊垫与该护层；以及
图案化光致抗蚀剂，位于该黏着层上，并包含暴露位于该凹穴中与该护层上的该黏着层的一开口；
以一金属凸块材料填入该开口中；
移除该图案化光致抗蚀剂，使得该金属凸块材料成为位于该黏着层上的一金属凸块；
移除没有被该金属凸块材料所覆盖的该黏着层，以部分暴露位于下方的该护层；以及
形成一覆层，以完全覆盖该金属凸块，其中形成该覆层一并形成了横向延伸的一侧翼，且该侧翼位于该护层上。
15.如权利要求14所述的形成一种金属凸块结构的方法，其中该覆层自行对准于该金属凸块。
16.如权利要求14所述的形成一种金属凸块结构的方法，其中过移除该黏着层，以形成位于该金属凸块、该黏着层、与该护层间的一嵌穴。
17.如权利要求14所述的形成一种金属凸块结构的方法，其中该覆层为一帽盖层与一保护层其中的至少一者，且该侧翼为对应于该帽盖层与该保护层的一帽盖侧翼与一保护侧翼其中的至少一者。
18.如权利要求17所述的形成一种金属凸块结构的方法，其中该护层填入该嵌穴中形成一T形截面，而使得该保护侧翼直接接触该黏着层。
19.如权利要求17所述的形成一种金属凸块结构的方法，其中该保护层由一层的金所组成。
20.如权利要求17所述的形成一种金属凸块结构的方法，其中该帽盖层填入该嵌穴中形成一T形截面，而使得该帽盖层侧翼直接接触该黏着层。
21.如权利要求17所述的形成一种金属凸块结构的方法，其中该帽盖层由一层的钯所组成。
22.如权利要求17所述的形成一种金属凸块结构的方法，其中该帽盖层夹至于该保护层与该金属凸块之间，而使得该保护侧翼覆盖该帽盖层。
23.如权利要求14所述的形成一种金属凸块结构的方法，其中该金属凸块包含铜与金其中一者。
24.如权利要求14所述的形成一种金属凸块结构的方法，其中以电镀将该金属凸块材料填入该开口中。
25.如权利要求14所述的形成一种金属凸块结构的方法，其中以电镀形成该覆层。
26.如权利要求14所述的形成一种金属凸块结构的方法，还包含：
熟化该金属凸块，而调整其硬度。
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