CN104143543B - 金属凸块结构 - Google Patents

金属凸块结构 Download PDF

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Publication number
CN104143543B
CN104143543B CN201410188528.6A CN201410188528A CN104143543B CN 104143543 B CN104143543 B CN 104143543B CN 201410188528 A CN201410188528 A CN 201410188528A CN 104143543 B CN104143543 B CN 104143543B
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metal
metal coupling
layer
cap layer
bump structure
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CN104143543A (zh
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林久顺
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Himax Technologies Ltd
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Himax Technologies Ltd
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Abstract

本发明公开一种金属凸块结构，包含位于金属焊垫上的护层、位于金属焊垫上又部分位于护层上的黏着层、部分位于凹穴中并覆盖黏着层的金属凸块、以及完全覆盖金属凸块的帽盖层。

Description

金属凸块结构
技术领域
本发明涉及一种金属凸块结构及其形成的方法，特别是涉及一种特用于驱动集成电路(IC)金属凸块结构而免于周遭的大气环境的威胁、在卤素或高电场的存在下也不会发生迦凡尼效应(Galvanic effect)效应，及其形成的方法。
背景技术
在电子电路中，金属凸块用来形成两组电路之间的电连接。为了要降低不可避免的电阻与达成最佳的效果，铜通常是金属凸块材料的第一选择。
一般说来，铜是作为金属凸块理想的材料，因为它的化学性质不活泼，还有着极低的电阻值。然而，在一些应用场合中，作为金属凸块材料的铜却遭受严重的损伤，这是因为在异常的情形或是极端的情况存在之下，会发生迦凡尼效应(Galvanic effect)的缘故。这样的结果对电子电路的可靠性而言是不利的。
发明内容
有鉴于此，本发明首先提出一种金属凸块(metal bump)结构，其可与各向异性导电胶(ACF)一起连结使用，或用于驱动集成电路(driver IC)中。此等金属凸块结构，在极端环境或是异常环境下基本上不会发生迦凡尼效应(Galvanic effect)。
本发明的金属凸块结构，包含金属焊垫、护层、黏着层、金属凸块与帽盖层。护层位于金属焊垫上，并定义出位于金属焊垫上的凹穴。黏着层位于凹穴中、位于金属焊垫上、又部分位于护层上，黏着层又直接接触金属焊垫与护层。金属凸块部分位于凹穴中并覆盖黏着层。帽盖层位于金属凸块上并覆盖金属凸块，而使得金属凸块不会暴露出来。
在本发明一实施方式中，金属凸块自行对准于黏着层。
在本发明另一实施方式中，帽盖层自行对准于金属凸块。
在本发明另一实施方式中，帽盖层、黏着层、与护层间具有一嵌穴(notch)。
在本发明另一实施方式中，金属凸块包含铜与金其中之一者。
在本发明另一实施方式中，帽盖层与金属凸块形成合金，以防止金属凸块穿出帽盖层。
在本发明另一实施方式中，帽盖层与金属凸块的界面没有合金。
在本发明另一实施方式中，当金属凸块由铜所组成时，帽盖层包含锡、镍、金、钯其中至少一者，当金属凸块由金所组成时，帽盖层包含锡、镍、钯其中至少一者。
在本发明另一实施方式中，在卤素与高电场其中的至少一者存在下，不发生迦凡尼效应(Galvanic effect)效应。
在本发明另一实施方式中，金属凸块结构位在玻璃覆晶(chip on glass,COG)封装结构与薄膜覆晶(chip on flex,COF)封装结构其中一者中。
本发明再提出一种形成一种金属凸块结构的方法，而可以用于驱动集成电路(driver IC)中。首先，提供底材。底材包含金属焊垫、护层、黏着层、与图案化光致抗蚀剂。护层位于金属焊垫上，并定义出位于金属焊垫上的凹穴。黏着层位于凹穴中，覆盖并直接接触金属焊垫与护层。图案化光致抗蚀剂位于黏着层上，并包含有开口，此开口暴露位于凹穴中与护层上的黏着层。其次，以金属凸块材料填入开口中。然后，移除图案化光致抗蚀剂，使得金属凸块材料成为位于黏着层上的金属凸块。再来，移除没有被金属凸块材料所覆盖的黏着层，同时部分暴露位于下方的护层。又使得金属凸块熟化以调整其硬度。继续，形成覆盖金属凸块的帽盖层。
在本发明一实施方式中，帽盖层自行对准于金属凸块。
在本发明另一实施方式中，移除黏着层时，过移除(over-removed)黏着层，以形成位于帽盖层、黏着层、与护层间的嵌穴(notch)。
在本发明另一实施方式中，金属凸块包含铜或是金。
在本发明另一实施方式中，形成金属凸块结构的方法，还包含熟化位于金属凸块上的帽盖层，于是帽盖层与金属凸块形成合金，用来防止金属凸块穿出帽盖层。
在本发明另一实施方式中，形成帽盖层以完全覆盖金属凸块，但是不形成合金。
在本发明另一实施方式中，当金属凸块由铜所组成时，帽盖层包含锡、镍、金、钯其中至少一者，当金属凸块由金所组成时，帽盖层包含锡、镍、钯其中至少一者。
在本发明另一实施方式中，在卤素与高电场其中至少一者的存在下，金属凸块不发生迦凡尼效应(Galvanic effect)效应。
在本发明另一实施方式中，以电镀的方式将金属凸块材料填入开口中。
在本发明另一实施方式中，以无电电镀的方式形成帽盖层。
附图说明
图1至图6为本发明形成金属凸块结构的方法的示意图；
图7或图7A为本发明形成金属凸块结构的方法的示意图；
图8为本发明形成金属凸块结构的方法，因为嵌穴被完全填满所以消失不见的示意图；
图9、图9A或图10为本发明的金属凸块结构示意图。
符号说明
1金属凸块结构
9绝缘层
10底材
11金属焊垫
12护层
13黏着层
14光致抗蚀剂层
14光致抗蚀剂层’
15凹穴
16开口
20’金属凸块材料
20金属凸块
30嵌穴
40帽盖层
41合金
具体实施方式
本发明首先提供一种形成金属凸块结构的方法，可以将驱动集成电路芯片(driver IC)与显示器的电路进行电连接，特别适用于金属凸块封装的玻璃覆晶(COG)封装结构与薄膜覆晶(COF)封装结构技术中。图1至图6绘示本发明形成金属凸块结构的方法。首先，在第一方面先说明如何将金属凸块形成在底材上。如图1所绘示，提供底材10。底材10包括金属焊垫11、护层12与黏着层13。
绝缘层9为底材10的基础部分，用来支撑其它的元件，例如用来支撑金属焊垫11、护层12、黏着层13与后续图中的图案化光致抗蚀剂层。金属焊垫11可以是一种质轻的金属材料，例如铝，并经过图案化。但是，其它的金属也可采用，而并不仅限于铝。
护层12即位于金属焊垫11之上，同时还具有定义出凹穴15的图案，使得凹穴15也位于金属焊垫11之上。护层12可以是一种电绝缘的材料，例如是氮化硅、氧化硅或是其组合。通常来说，凹穴15的大小会小于金属焊垫11的大小。
黏着层13又位于凹穴15之中。此外，黏着层13还会覆盖金属焊垫11与护层12，使得黏着层13会直接接触金属焊垫11与护层12。黏着层13用来帮助后续形成的金属凸块材料(图未示)牢牢地附着在凹穴15之中。黏着层13可以是一种合金层，例如钛钨合金层或是钛金属层。
黏着层13的形成方法可以是，利用溅镀一层钛钨合金，与例如铜的晶种层的方法，来均匀地覆盖底材10，例如完全地覆盖金属焊垫11、护层12、与凹穴15的表面。结果例示于图1中。形成图案化光致抗蚀剂层的方式，可以参考如下所示的方式。
如图2所绘示，将一大片光致抗蚀剂层14’整体形成在黏着层13上，并同时填满凹穴15。光致抗蚀剂层14’可以是光敏性的材料，例如是有机的光敏材料。
再来，如图3所绘示，将光致抗蚀剂层14’图案化。图案化光致抗蚀剂层14的方式可以是如下所述。光致抗蚀剂层14形成在黏着层13上来定义出开口16。开口16用来暴露出位于凹穴15中与护层12上的黏着层13，因此，在本发明的一实施例中，开口16会稍微大于凹穴15。换句话说，开口16可以用来定义出后续所形成的金属凸块材料(图未示)所位在的空间，而此空间本身即容置了凹穴15。
然后，整体的光致抗蚀剂层14’又会经过适当的曝光与显影步骤，而转换成图案化光致抗蚀剂层14，而具有曝光与显影所赋与的预定图案。图案是经由开口16所定义出的，其结果即绘示于图3所中。
接下来，如图4所绘示，使用金属凸块材料20’来填入开口16中。请注意，金属凸块材料20’可能仅仅只是「填入」开口16中，而没有「填满」开口16。此时，黏着层13即因此夹置于金属凸块材料20’与金属焊垫11之间，以及夹置于金属凸块材料20’与护层12之间。例如，由于金属焊垫11与黏着层13均为导电性材料，所以金属凸块材料20’可以经由电镀的方式来形成。视情况需要，金属凸块材料20’可以使用钯、银、铜或是金，以寻求较佳的导电性，与越低越好的化学活性。
一但将金属凸块材料20’形成好了之后，就不再需要图案化光致抗蚀剂层14了。于是，如图5所绘示，移除图案化光致抗蚀剂层14，使得金属凸块材料20’成为各自独立的金属凸块20。可以使用传统的方式来移除图案化光致抗蚀剂层14。于是，各自独立的金属凸块20，就会完全位于黏着层13之上，并直接接触黏着层13。
由于黏着层13是导电的，这会导致所有的金属凸块20彼此短路，所以多余的黏着层13必须要移除。再来，如图6所绘示，没有被金属凸块20所覆盖的黏着层13经由蚀刻步骤来移除，又部分地暴露出下方的护层12，使得所有的金属凸块20，通过电绝缘材料，也即护层12的隔离，成为彼此电绝缘。如此一来，所有的金属凸块20即自我对准于黏着层13。例如，可以使用过氧化氢来蚀刻黏着层13的钛钨合金。
视情况需要，蚀刻步骤之后还可以进行加热金属凸块20的熟化，来调整金属凸块20达到所需的硬度。例如，在大于300℃或是维持超过90分钟的退火条件。一般说来，较低的硬度需要较高的熟化温度与较短的熟化时间，而较高的硬度需要较低的熟化温度与较长的熟化时间，来将金属凸块20调整到所需的适当硬度，例如不超过130维氏硬度(Hv)，较佳者不大于110维氏硬度，更佳者介于50维氏硬度至110维氏硬度之间。
此时可以注意到在图6中，在移除黏着层13时，在金属凸块20、黏着层13、与护层12之间形成了一只嵌穴30，因为蚀刻步骤不只会完全移除没有被金属凸块20所覆盖的黏着层13，蚀刻步骤也可能会更进一步移除没有被金属凸块20所覆盖的黏着层13以外其他的黏着层13，例如，夹置于金属凸块20、与护层12间的黏着层13。而结果是，在金属凸块20、黏着层13、与护层12之间便形成了一只嵌穴30，而成为本发明结构的特征之一。在有嵌穴30存在时，金属凸块20会几乎覆盖所有的黏着层13。另外，嵌穴30则可能横向地深入1微米(μm)-2微米左右。
由于各自独立的金属凸块20，仍然可能因为暴露于周围的大气环境中而失之脆弱，所以需要再特意形成帽盖层来覆盖金属凸块20，使得金属凸块20尽量不会暴露于周围的大气环境中。请参考图7所绘示，形成帽盖层40来几乎完全覆盖金属凸块20，或是参考如图7A所绘示，帽盖层40伸入了嵌穴30，而在有嵌穴30的存在下，得到了理想的金属凸块结构1。
帽盖层40可以包含多种保护性的材料。如果是铜制成的金属凸块20，帽盖层40可以包含锡、镍、金、钯其中至少一者。如果是金制成的金属凸块20，帽盖层40可以包含锡、镍、钯其中至少一者。如果是银制成的金属凸块20，帽盖层40可以包含锡。如果是钯制成的金属凸块20，帽盖层40可以包含锡。帽盖层40也可以不含镍。不过，所形成帽盖层40可能只会减小嵌穴30的尺寸，或是如图8所绘示，因为完全填满了嵌穴30，使得嵌穴30消失不见。而且，帽盖层40也可以完全覆盖金属凸块20。
较佳者，可以经由无电极电镀法来形成帽盖层40，例如可以在小于4的酸碱值、硫酸盐的辅助下进行无电极电镀法。由于护层12是一种电绝缘材料，所以帽盖层40很可能只会特定而专一地形成在金属凸块20上。换句话说，帽盖层40即自我对准在金属凸块20上。帽盖层40可以是单层结构或是复合结构，而包含多层的帽盖材料。在本发明的一实施例中，如图8所绘示，帽盖层40完全覆盖金属凸块20，但是帽盖层40与金属凸块20的界面上没有形成合金，嵌穴30也消失不见。
另外，依据无电极电镀法的不同电镀配方或是电镀条件，帽盖层40还可以有不同的厚度与其它的形状。例如，帽盖层40可能是合金41、内层与外层的搭配或组合。较佳者，帽盖层40含有金，其优点在于有利于重工(re-work)，又可以减低材料的成本。当帽盖层40含钯时，钯层的厚度可以是0.15微米-0.4微米左右。当帽盖层40含金时，金层的厚度可以是在2微米以下，较佳者不大于0.1微米，甚至于可以只有0.006微米而已。表1列举电镀帽盖层40的可行步骤与制作工艺参数。其中在每个步骤之后，均可以再加入纯水洗涤的清洁步骤。
表1
电镀步骤 温度(℃) 酸碱(pH)值 时间(秒)
金属凸块清洁步骤 室温 小于7 30-60
酸处理步骤 室温 小于1 30-120
活化晶种步骤 室温 1.1-2 60-360
镀钯步骤 50-54 6～8 600-1200
镀镍步骤 50-54 6～8 600-1200
镀金步骤 85 4.7-5.3 1200以内
在本发明的一实施例中，帽盖层40会完全包覆金属凸块20但又不与金属凸块20形成伴生的合金层，例如铜不容易与镍或钯形成伴生的合金层。在本发明的另一实施例中，又可以进行一熟化(curing)步骤，使得帽盖层40与金属凸块20形成合金。例如，请参考图9或图10所绘示，形成在金属凸块20上的帽盖层40被加热到，例如在150℃～180℃与30～60分钟的条件下，与金属凸块20形成合金41。铜与锡在不同的条件下，可以形成多种的合金，例如Cu3Sn、Cu6Sn5、Cu41Sn11、或是Cu10Sn3。
合金41的形成，刻意用来防止金属凸块20在极端的情形下可能穿过帽盖层40。在帽盖层40的保护下，不管有或是没有合金41，金属凸块20都不会暴露于周围的大气环境中，所以在卤素及/或高电场的存在下也不会发生迦凡尼效应(Galvanic effect)效应。图9A绘示，帽盖层40被熟化形成合金41，但只会减小嵌穴30的尺寸。图10所绘示，帽盖层40被熟化形成合金41，但使得嵌穴30消失不见。
在经过以上的步骤后，就可以得到一种金属凸块结构1。本发明的金属凸块结构1，适合玻璃覆晶(COG)封装结构或是薄膜覆晶(COF)封装结构，因此可以用于驱动集成电路(driver IC)中。图9或图10绘示本发明的金属凸块结构。本发明的金属凸块结构1包含金属焊垫11、护层12、黏着层13、金属凸块20、帽盖层40、与视情况需要的合金41。金属焊垫11可以是一种质轻的金属材料，例如铝，并经过图案化。但是，其它的金属也可采用，而并不限于铝。
护层12即位于金属焊垫11之上，同时还具有图案化而定义出的凹穴15，使得凹穴15也位于金属焊垫11之上。护层12可以是一种电绝缘的材料，例如是氮化硅、氧化硅或是其组合。通常来说，凹穴15的大小会小于金属焊垫11的大小。
凹穴15之中完全填有黏着层13。此外，黏着层13还位于金属焊垫11之上，来覆盖并直接接触金属焊垫11。然而，部分的黏着层13位于护层12上，来覆盖并直接接触护层12。黏着层13用来帮助金属凸块20牢牢地附着在凹穴15之中。黏着层13可以是一种合金层，例如钛钨合金层，或是钛金属层。
金属凸块20部分地位于凹穴15中并覆盖黏着层13，使得黏着层13夹置于金属凸块20与金属焊垫11之间，以及夹置于金属凸块20与护层12之间。特别是，金属凸块20会自我对准于黏着层13。视情况需要，金属凸块20的材料可以是钯、银、铜或是金，以寻求较佳的导电性，与越低越好的化学活性。
帽盖层40位于金属凸块20上并完全覆盖金属凸块20，如图7所绘示，而使得金属凸块20完全不会暴露出来。或是，如图7A所绘示，帽盖层40伸入了嵌穴30中而使得金属凸块20几乎完全不会暴露出来。换句话说，帽盖层40可以自我对准在金属凸块20上。
特别是，如图7与图9所绘示，可以注意到本发明结构的特征之一，在金属凸块20、黏着层13、与护层12之间还可能会有一只嵌穴30，使得嵌穴30可能会使得黏着层13部分暴露出来。
帽盖层40是用来完全覆盖金属凸块20，使得金属凸块20得以免于暴露于大气环境中。帽盖层40可以包含多种保护性的材料。如果是铜制成的金属凸块20，帽盖层40可以包含锡、镍、金、钯其中至少一者。如果是金制成的金属凸块20，帽盖层40可以包含锡、镍、钯其中至少一者。如果是银制成的金属凸块20，帽盖层40可以包含锡。如果是钯制成的金属凸块20，帽盖层40可以包含锡。不过，请注意到较厚的帽盖层40可能会减小嵌穴30的尺寸，如图8或图10所绘示，因为较厚的帽盖层40可能会完全填满了嵌穴30，或是使得嵌穴30消失不见。
由于形成在金属凸块20上的帽盖层40是有缘故的，帽盖层40即可以自我对准在金属凸块20上。在本发明的一实施例中，如图7或图8所绘示，帽盖层40只会完全包覆金属凸块20，但又不与金属凸块20形成伴生的合金层。在本发明的另一实施例中，如图9或图10所绘示，形成在金属凸块20上的帽盖层40会与金属凸块20形成伴生的合金层41。
如果有合金41，如图9或图10所绘示，铜、锡、镍、银、金、钯可能会形成多种的合金。例如，铜与锡在不同的条件下，可以形成Cu3Sn、Cu6Sn5、Cu41Sn11、或是Cu10Sn3的合金。特别是，合金41的形成，刻意用来防止金属凸块20在极端的情形下可能穿过帽盖层40。在帽盖层40的保护下，不管有或是没有合金41，金属凸块20都不会暴露于周围的大气环境中，所以在卤素及/或高电场的存在下也不会发生迦凡尼效应(Galvanic effect)效应。
以上所述仅为本发明的较佳实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (16)

1.一种金属凸块结构，其用于一驱动集成电路中并包含：
金属焊垫；
护层，位于该金属焊垫上，并定义出位于该金属焊垫上的一凹穴；
黏着层，位于该凹穴中、位于该金属焊垫上、又部分位于该护层上，其中该黏着层直接接触该金属焊垫与该护层；
金属凸块，部分位于该凹穴中并覆盖该黏着层，且该金属凸块通过熟化步骤来达到所需的硬度；以及
帽盖层，位于该金属凸块上并覆盖该金属凸块，而使得该金属凸块不会暴露出来，其中该帽盖层与该金属凸块通过熟化步骤来形成一合金，以防止该金属凸块穿出该帽盖层。
2.如权利要求1所述的金属凸块结构，其中该金属凸块自行对准于该黏着层。
3.如权利要求1所述的金属凸块结构，其中该帽盖层自行对准于该金属凸块。
4.如权利要求1所述的金属凸块结构，其中该帽盖层、该黏着层、与该护层间具有一嵌穴。
5.如权利要求1所述的金属凸块结构，其中该金属凸块包含铜与金其中一者。
6.如权利要求5所述的金属凸块结构，其中当该金属凸块由铜所组成时该帽盖层包含锡、镍、金、钯其中至少一者，当该金属凸块由金所组成时该帽盖层包含锡、镍、钯其中至少一者。
7.如权利要求1所述的金属凸块结构，在卤素与一高电场其中至少一者的存在下不发生迦凡尼效应效应。
8.如权利要求1所述的金属凸块结构，位在玻璃覆晶封装结构与薄膜覆晶封装结构其中一者中。
9.一种形成一种金属凸块结构的方法，而用于一驱动集成电路中，其包含：
提供一底材，其包含：
金属焊垫；
护层，位于该金属焊垫上，并定义出位于该金属焊垫上的一凹穴；
黏着层，位于该凹穴中、覆盖并直接接触该金属焊垫与该护层；以及
图案化光致抗蚀剂，位于该黏着层上，并包含暴露位于该凹穴中与该护层上的该黏着层的一开口；
以一金属凸块材料填入该开口中；
移除该图案化光致抗蚀剂，使得该金属凸块材料成为位于该黏着层上的一金属凸块；
移除没有被该金属凸块材料所覆盖的该黏着层，以部分暴露位于下方的该护层，并使得该金属凸块熟化以调整其硬度；
形成一帽盖层，以覆盖该金属凸块；
熟化位于该金属凸块上的该帽盖层，而与该金属凸块形成一合金，而防止该金属凸块穿出该帽盖层。
10.如权利要求9所述的形成一种金属凸块结构的方法，其中该帽盖层自行对准于该金属凸块。
11.如权利要求9所述的形成一种金属凸块结构的方法，其中移除该黏着层时，过移除该黏着层，以形成位于该帽盖层、该黏着层、与该护层间的一嵌穴。
12.如权利要求9所述的形成一种金属凸块结构的方法，其中该金属凸块包含铜与金其中一者。
13.如权利要求9所述的形成一种金属凸块结构的方法，其中当该金属凸块由铜所组成时该帽盖层包含锡、镍、金、钯其中至少一者，当该金属凸块由金所组成时该帽盖层包含锡、镍、钯其中至少一者。
14.如权利要求9所述的形成一种金属凸块结构的方法，其中在卤素与一高电场其中至少一者的存在下，该金属凸块不发生迦凡尼效应效应。
15.如权利要求9所述的形成一种金属凸块结构的方法，其中以电镀将该金属凸块材料填入该开口中。
16.如权利要求9所述的形成一种金属凸块结构的方法，其中以无电电镀形成该帽盖层。
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US9450061B2 (en) 2016-09-20
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