TW201444006A - 金屬凸塊結構 - Google Patents

金屬凸塊結構 Download PDF

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Publication number
TW201444006A
TW201444006A TW103115992A TW103115992A TW201444006A TW 201444006 A TW201444006 A TW 201444006A TW 103115992 A TW103115992 A TW 103115992A TW 103115992 A TW103115992 A TW 103115992A TW 201444006 A TW201444006 A TW 201444006A
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Taiwan
Prior art keywords
metal bump
metal
layer
cap layer
adhesive layer
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TW103115992A
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English (en)
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TWI573205B (zh
Inventor
Chiu-Shun Lin
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Himax Tech Ltd
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Publication of TW201444006A publication Critical patent/TW201444006A/zh
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Publication of TWI573205B publication Critical patent/TWI573205B/zh

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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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Abstract

一種金屬凸塊結構，包含位於金屬銲墊上之護層、位於金屬銲墊上又部份位於護層上之黏著層、部份位於凹穴中並覆蓋黏著層之金屬凸塊、以及完全覆蓋金屬凸塊之帽蓋層。

Description

金屬凸塊結構
本發明大致上關於一種金屬凸塊結構及其形成的方法。特別是，本發明關於一種特用於驅動積體電路(IC)金屬凸塊結構而免於周遭之大氣環境的威脅、在鹵素或高電場之存在下也不會發生迦凡尼效應(Galvanic effect)效應，及其形成的方法。
在電子電路中，金屬凸塊用來形成兩組電路之間的電連接。為了要降低不可避免的電阻與達成最佳的效果，銅通常是金屬凸塊材料的第一選擇。
一般說來，銅是作為金屬凸塊理想的材料，因為它的化學性質不活潑，還有著極低的電阻值。然而，在一些應用場合中，作為金屬凸塊材料的銅卻遭受嚴重的損傷，這是因為在異常的情形或是極端的情況存在之下，會發生迦凡尼效應(Galvanic effect)的緣故。這樣的結果對電子電路的可靠性而言是不利的。
有鑒於此，本發明首先提出一種金屬凸塊結構，其可與異方性導電膠(ACF)一起連結使用，或用於驅動積體電路(driver IC)中。此等金屬凸塊結構，在極端環境或是異常環境下基本上不會發生迦凡尼效應(Galvanic effect)。
本發明之金屬凸塊結構，包含金屬銲墊、護層、黏著層、金屬凸塊與帽蓋層。護層位於金屬銲墊上，並定義出位於金屬銲墊上之凹穴。黏著 層位於凹穴中、位於金屬銲墊上、又部份位於護層上，黏著層又直接接觸金屬銲墊與護層。金屬凸塊部份位於凹穴中並覆蓋黏著層。帽蓋層位於金屬凸塊上並覆蓋金屬凸塊，而使得金屬凸塊不會暴露出來。
在本發明一實施方式中，金屬凸塊自行對準於黏著層。
在本發明另一實施方式中，帽蓋層自行對準於金屬凸塊。
在本發明另一實施方式中，帽蓋層、黏著層、與護層間具有一嵌穴(notch)。
在本發明另一實施方式中，金屬凸塊包含銅與金其中之一者。
在本發明另一實施方式中，帽蓋層與金屬凸塊形成合金，以防止金屬凸塊穿出帽蓋層。
在本發明另一實施方式中，帽蓋層與金屬凸塊之界面沒有合金。
在本發明另一實施方式中，當金屬凸塊由銅所組成時，帽蓋層包含錫、鎳、金、鈀其中至少一者，當金屬凸塊由金所組成時，帽蓋層包含錫、鎳、鈀其中至少一者。
在本發明另一實施方式中，在鹵素與高電場其中之至少一者存在下，不發生迦凡尼效應(Galvanic effect)效應。
在本發明另一實施方式中，金屬凸塊結構位在玻璃覆晶(chip on glass,COG)封裝結構與薄膜覆晶(chip on flex,COF)封裝結構其中一者中。
本發明再提出一種形成一種金屬凸塊結構的方法，而可以用於驅動積體電路(driver IC)中。首先，提供底材。底材包含金屬銲墊、護層、黏著層、與圖案化光阻。護層位於金屬銲墊上，並定義出位於金屬銲墊上之凹穴。黏著層位於凹穴中，覆蓋並直接接觸金屬銲墊與護層。圖案化光阻位於黏著層上，並包含有開口，此開口暴露位於凹穴中與護層上之黏著層。其次，以金屬凸塊材料填入開口中。然後，移除圖案化光阻，使得金屬凸塊材料成為位於黏著層上之金屬凸塊。再來，移除沒有被金屬凸塊材料所覆蓋之黏著 層，同時部分暴露位於下方之護層。又使得金屬凸塊熟化以調整其硬度。繼續，形成覆蓋金屬凸塊的帽蓋層。
在本發明一實施方式中，帽蓋層自行對準於金屬凸塊。
在本發明另一實施方式中，移除黏著層時，過移除(over-removed)黏著層，以形成位於帽蓋層、黏著層、與護層間之嵌穴(notch)。
在本發明另一實施方式中，金屬凸塊包含銅或是金。
在本發明另一實施方式中，形成金屬凸塊結構的方法，更包含熟化位於金屬凸塊上之帽蓋層，於是帽蓋層與金屬凸塊形成合金，用來防止金屬凸塊穿出帽蓋層。
在本發明另一實施方式中，形成帽蓋層以完全覆蓋金屬凸塊，但是不形成合金。
在本發明另一實施方式中，當金屬凸塊由銅所組成時，帽蓋層包含錫、鎳、金、鈀其中至少一者，當金屬凸塊由金所組成時，帽蓋層包含錫、鎳、鈀其中至少一者。
在本發明另一實施方式中，在鹵素與高電場其中至少一者之存在下，金屬凸塊不發生迦凡尼效應(Galvanic effect)效應。
在本發明另一實施方式中，以電鍍的方式將金屬凸塊材料填入開口中。
在本發明另一實施方式中，以無電電鍍的方式形成帽蓋層。
1‧‧‧金屬凸塊結構
9‧‧‧絕緣層
10‧‧‧底材
11‧‧‧金屬銲墊
12‧‧‧護層
13‧‧‧黏著層
14‧‧‧光阻層
14‧‧‧光阻層’
15‧‧‧凹穴
16‧‧‧開口
20’‧‧‧金屬凸塊材料
20‧‧‧金屬凸塊
30‧‧‧嵌穴
40‧‧‧帽蓋層
41‧‧‧合金
第1圖至第6圖繪示本發明形成金屬凸塊結構的方法。
第7圖或第7A圖繪示本發明形成金屬凸塊結構的方法。
第8圖繪示本發明形成金屬凸塊結構的方法，因為嵌穴被完全填滿所以消失不見。
第9圖、第9A圖或第10圖繪示本發明之金屬凸塊結構。
本發明首先提供一種形成金屬凸塊結構的方法，可以將驅動積體電路晶片(driver IC)與顯示器之電路進行電連接，特別適用於金屬凸塊封裝的玻璃覆晶(COG)封裝結構與薄膜覆晶(COF)封裝結構技術中。第1圖至第6圖繪示本發明形成金屬凸塊結構的方法。首先，在第一方面先說明如何將金屬凸塊形成在底材上。如第1圖所繪示，提供底材10。底材10包括金屬銲墊11、護層12與黏著層13。
絕緣層9為底材10之基礎部份，用來支撐其它之元件，例如用來支撐金屬銲墊11、護層12、黏著層13與後續圖中之圖案化光阻層。金屬銲墊11可以是一種質輕之金屬材料，例如鋁，並經過圖案化。但是，其它之金屬亦可採用，而並不僅限於鋁。
護層12即位於金屬銲墊11之上，同時還具有定義出凹穴15的圖案，使得凹穴15亦位於金屬銲墊11之上。護層12可以是一種電絕緣之材料，例如是氮化矽、氧化矽或是其組合。通常來說，凹穴15的大小會小於金屬銲墊11的大小。
黏著層13又位於凹穴15之中。此外，黏著層13還會覆蓋金屬銲墊11與護層12，使得黏著層13會直接接觸金屬銲墊11與護層12。黏著層13用來幫助後續形成之金屬凸塊材料(圖未示)牢牢地附著在凹穴15之中。黏著層13可以是一種合金層，例如鈦鎢合金層或是鈦金屬層。
黏著層13的形成方法可以是，利用濺鍍一層鈦鎢合金，與例如銅的晶種層的方法，來均勻地覆蓋底材10，例如完全地覆蓋金屬銲墊11、護層12、與凹穴15的表面。結果例示於第1圖中。形成圖案化光阻層之方式，可以參考如下所示之方式。
如第2圖所繪示，將一大片光阻層14’整體形成在黏著層13上， 並同時填滿凹穴15。光阻層14’可以是光敏性的材料，例如是有機的光敏材料。
再來，如第3圖所繪示，將光阻層14’圖案化。圖案化光阻層14的方式可以是如下所述。光阻層14形成在黏著層13上來定義出開口16。開口16用來暴露出位於凹穴15中與護層12上的黏著層13，因此，在本發明之一實施例中，開口16會稍微大於凹穴15。換句話說，開口16可以用來定義出後續所形成之金屬凸塊材料(圖未示)所位在的空間，而此空間本身即容置了凹穴15。
然後，整體的光阻層14’又會經過適當的曝光與顯影步驟，而轉換成圖案化光阻層14，而具有曝光與顯影所賦與的預定圖案。圖案是經由開口16所定義出的，其結果即繪示於第3圖所中。
接下來，如第4圖所繪示，使用金屬凸塊材料20’來填入開口16中。請注意，金屬凸塊材料20’可能僅僅只是「填入」開口16中，而沒有「填滿」開口16。此時，黏著層13即因此夾置於金屬凸塊材料20’與金屬銲墊11之間，以及夾置於金屬凸塊材料20’與護層12之間。例如，由於金屬銲墊11與黏著層13均為導電性材料，所以金屬凸塊材料20’可以經由電鍍之方式來形成。視情況需要，金屬凸塊材料20’可以使用鈀、銀、銅或是金，以尋求較佳之導電性，與越低越好之化學活性。
一但將金屬凸塊材料20’形成好了之後，就不再需要圖案化光阻層14了。於是，如第5圖所繪示，移除圖案化光阻層14，使得金屬凸塊材料20’成為各自獨立之金屬凸塊20。可以使用傳統的方式來移除圖案化光阻層14。於是，各自獨立之金屬凸塊20，就會完全位於黏著層13之上，並直接接觸黏著層13。
由於黏著層13是導電的，這會導致所有的金屬凸塊20彼此短路，所以多餘的黏著層13必須要移除。再來，如第6圖所繪示，沒有被金屬凸塊20所覆蓋的黏著層13經由蝕刻步驟來移除，又部份地暴露出下方之護層12， 使得所有的金屬凸塊20，藉由電絕緣材料，亦即護層12的隔離，成為彼此電絕緣。如此一來，所有的金屬凸塊20即自我對準於黏著層13。例如，可以使用過氧化氫來蝕刻黏著層13的鈦鎢合金。
視情況需要，蝕刻步驟之後還可以進行加熱金屬凸塊20的熟化，來調整金屬凸塊20達到所需的硬度。例如，在大於300℃或是維持超過90分鐘之退火條件。一般說來，較低的硬度需要較高的熟化溫度與較短的熟化時間，而較高的硬度需要較低的熟化溫度與較長的熟化時間，來將金屬凸塊20調整到所需的適當硬度，例如不超過130維氏硬度(Hv)，較佳者不大於110維氏硬度，更佳者介於50維氏硬度至110維氏硬度之間。
此時可以注意到在第6圖中，在移除黏著層13時，在金屬凸塊20、黏著層13、與護層12之間形成了一只嵌穴30，因為蝕刻步驟不只會完全移除沒有被金屬凸塊20所覆蓋的黏著層13，蝕刻步驟也可能會更進一步移除沒有被金屬凸塊20所覆蓋的黏著層13以外其他的黏著層13，例如，夾置於金屬凸塊20、與護層12間之黏著層13。而結果是，在金屬凸塊20、黏著層13、與護層12之間便形成了一只嵌穴30，而成為本發明結構的特徵之一。在有嵌穴30存在時，金屬凸塊20會幾乎覆蓋所有的黏著層13。另外，嵌穴30則可能橫向地深入1微米(μm)-2微米左右。
由於各自獨立之金屬凸塊20，仍然可能因為暴露於周圍的大氣環境中而失之脆弱，所以需要再特意形成帽蓋層來覆蓋金屬凸塊20，使得金屬凸塊20盡量不會暴露於周圍的大氣環境中。請參考第7圖所繪示，形成帽蓋層40來幾乎完全覆蓋金屬凸塊20，或是參考如第7A圖所繪示，帽蓋層40伸入了嵌穴30，而在有嵌穴30之存在下，得到了理想的金屬凸塊結構1。
帽蓋層40可以包含多種保護性的材料。如果是銅製成的金屬凸塊20，帽蓋層40可以包含錫、鎳、金、鈀其中至少一者。如果是金製成的金屬凸塊20，帽蓋層40可以包含錫、鎳、鈀其中至少一者。如果是銀製成的金屬凸塊20，帽蓋層40可以包含錫。如果是鈀製成的金屬凸塊20，帽蓋層40 可以包含錫。帽蓋層40也可以不含鎳。不過，所形成帽蓋層40可能只會減小嵌穴30的尺寸，或是如第8圖所繪示，因為完全填滿了嵌穴30，使得嵌穴30消失不見。而且，帽蓋層40也可以完全覆蓋金屬凸塊20。
較佳者，可以經由無電極電鍍法來形成帽蓋層40，例如可以在小於4之酸鹼值、硫酸鹽之輔助下進行無電極電鍍法。由於護層12是一種電絕緣材料，所以帽蓋層40很可能只會特定而專一地形成在金屬凸塊20上。換句話說，帽蓋層40即自我對準在金屬凸塊20上。帽蓋層40可以是單層結構或是複合結構，而包含多層之帽蓋材料。在本發明的一實施例中，如第8圖所繪示，帽蓋層40完全覆蓋金屬凸塊20，但是帽蓋層40與金屬凸塊20之界面上沒有形成合金，嵌穴30也消失不見。
另外，依據無電極電鍍法的不同電鍍配方或是電鍍條件，帽蓋層40還可以有不同的厚度與其它的形狀。例如，帽蓋層40可能是合金41、內層與外層之搭配或組合。較佳者，帽蓋層40含有金，其優點在於有利於重工(re-work)，又可以減低材料的成本。當帽蓋層40含鈀時，鈀層的厚度可以是0.15微米-0.4微米左右。當帽蓋層40含金時，金層的厚度可以是在2微米以下，較佳者不大於0.1微米，甚至於可以只有0.006微米而已。表1列舉電鍍帽蓋層40之可行步驟與製程參數。其中在每個步驟之後，均可以再加入純水洗滌之清潔步驟。
在本發明之一實施例中，帽蓋層40會完全包覆金屬凸塊20但又不與金屬凸塊20形成伴生之合金層，例如銅不容易與鎳或鈀形成伴生之合金層。在本發明之另一實施例中，又可以進行一熟化(curing)步驟，使得帽蓋層40與金屬凸塊20形成合金。例如，請參考第9圖或第10圖所繪示，形成在金屬凸塊20上的帽蓋層40被加熱到，例如在150℃~180℃與30~60分鐘之條件下，與金屬凸塊20形成合金41。銅與錫在不同的條件下，可以形成多種的合金，例如Cu3Sn、Cu6Sn5、Cu41Sn11、或是Cu10Sn3。
合金41的形成，刻意用來防止金屬凸塊20在極端的情形下可能穿過帽蓋層40。在帽蓋層40的保護下，不管有或是沒有合金41，金屬凸塊20都不會暴露於周圍的大氣環境中，所以在鹵素及/或高電場之存在下也不會發生迦凡尼效應(Galvanic effect)效應。第9A圖繪示，帽蓋層40被熟化形成合金41，但只會減小嵌穴30的尺寸。第10圖所繪示，帽蓋層40被熟化形成合金41，但使得嵌穴30消失不見。
在經過以上之步驟後，就可以得到一種金屬凸塊結構1。本發明之金屬凸塊結構1，適合玻璃覆晶(COG)封裝結構或是薄膜覆晶(COF)封裝結構，因此可以用於驅動積體電路(driver IC)中。第9圖或第10圖繪示本發明之金屬凸塊結構。本發明之金屬凸塊結構1包含金屬銲墊11、護層12、黏著層13、金屬凸塊20、帽蓋層40、與視情況需要之合金41。金屬銲墊11可以是一種質輕之金屬材料，例如鋁，並經過圖案化。但是，其它之金屬亦可採用，而並不限於鋁。
護層12即位於金屬銲墊11之上，同時還具有圖案化而定義出的凹穴15，使得凹穴15亦位於金屬銲墊11之上。護層12可以是一種電絕緣之材料，例如是氮化矽、氧化矽或是其組合。通常來說，凹穴15的大小會小於金屬銲墊11的大小。
凹穴15之中完全填有黏著層13。此外，黏著層13還位於金屬銲墊11之上，來覆蓋並直接接觸金屬銲墊11。然而，部分的黏著層13位於護層12上，來覆蓋並直接接觸護層12。黏著層13用來幫助金屬凸塊20牢牢地附著在凹穴15之中。黏著層13可以是一種合金層，例如鈦鎢合金層，或是鈦金屬層。
金屬凸塊20部份地位於凹穴15中並覆蓋黏著層13，使得黏著層13夾置於金屬凸塊20與金屬銲墊11之間，以及夾置於金屬凸塊20與護層12之間。特別是，金屬凸塊20會自我對準於黏著層13。視情況需要，金屬凸塊20的材料可以是鈀、銀、銅或是金，以尋求較佳之導電性，與越低越好之化學活性。
帽蓋層40位於金屬凸塊20上並完全覆蓋金屬凸塊20，如第7圖所繪示，而使得金屬凸塊20完全不會暴露出來。或是，如第7A圖所繪示，帽蓋層40伸入了嵌穴30中而使得金屬凸塊20幾乎完全不會暴露出來。換句話說，帽蓋層40可以自我對準在金屬凸塊20上。
特別是，如第7圖與第9圖所繪示，可以注意到本發明結構的特徵之一，在金屬凸塊20、黏著層13、與護層12之間還可能會有一只嵌穴30，使得嵌穴30可能會使得黏著層13部分暴露出來。
帽蓋層40是用來完全覆蓋金屬凸塊20，使得金屬凸塊20得以免於暴露於大氣環境中。帽蓋層40可以包含多種保護性的材料。如果是銅製成的金屬凸塊20，帽蓋層40可以包含錫、鎳、金、鈀其中至少一者。如果是金製成的金屬凸塊20，帽蓋層40可以包含錫、鎳、鈀其中至少一者。如果是銀製成的金屬凸塊20，帽蓋層40可以包含錫。如果是鈀製成的金屬凸塊20，帽蓋層40可以包含錫。不過，請注意到較厚的帽蓋層40可能會減小嵌穴30的尺寸，如第8圖或第10圖所繪示，因為較厚的帽蓋層40可能會完全填滿了嵌穴30，或是使得嵌穴30消失不見。
由於形成在金屬凸塊20上的帽蓋層40是有緣故的，帽蓋層40 即可以自我對準在金屬凸塊20上。在本發明的一實施例中，如第7圖或第8圖所繪示，帽蓋層40只會完全包覆金屬凸塊20，但又不與金屬凸塊20形成伴生之合金層。在本發明的另一實施例中，如第9圖或第10圖所繪示，形成在金屬凸塊20上的帽蓋層40會與金屬凸塊20形成伴生之合金層41。
如果有合金41，如第9圖或第10圖所繪示，銅、錫、鎳、銀、金、鈀可能會形成多種之合金。例如，銅與錫在不同的條件下，可以形成Cu3Sn、Cu6Sn5、Cu41Sn11、或是Cu10Sn3的合金。特別是，合金41的形成，刻意用來防止金屬凸塊20在極端的情形下可能穿過帽蓋層40。在帽蓋層40的保護下，不管有或是沒有合金41，金屬凸塊20都不會暴露於周圍的大氣環境中，所以在鹵素及/或高電場之存在下也不會發生迦凡尼效應(Galvanic effect)效應。
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
1‧‧‧金屬凸塊結構
9‧‧‧絕緣層
11‧‧‧金屬銲墊
12‧‧‧護層
13‧‧‧黏著層
20‧‧‧金屬凸塊
30‧‧‧嵌穴
40‧‧‧帽蓋層

Claims (20)

  1. 一種金屬凸塊(metal bump)結構，其用於一驅動積體電路(driver IC)中並包含：一金屬銲墊；一護層，位於該金屬銲墊上，並定義出位於該金屬銲墊上之一凹穴；一黏著層，位於該凹穴中、位於該金屬銲墊上、又部份位於該護層上，其中該黏著層直接接觸該金屬銲墊與該護層；一金屬凸塊，部份位於該凹穴中並覆蓋該黏著層；以及一帽蓋層，位於該金屬凸塊上並覆蓋該金屬凸塊，而使得該金屬凸塊不會暴露出來。
  2. 如請求項1之金屬凸塊結構，其中該金屬凸塊自行對準於該黏著層。
  3. 如請求項1之金屬凸塊結構，其中該帽蓋層自行對準於該金屬凸塊。
  4. 如請求項1之金屬凸塊結構，其中該帽蓋層、該黏著層、與該護層間具有一嵌穴(notch)。
  5. 如請求項1之金屬凸塊結構，其中該金屬凸塊包含銅與金其中一者。
  6. 如請求項1之金屬凸塊結構，其中該帽蓋層與該金屬凸塊形成一合金，以防止該金屬凸塊穿出該帽蓋層。
  7. 如請求項1之金屬凸塊結構，其中該帽蓋層與該金屬凸塊之一界面沒有合金。
  8. 如請求項5之金屬凸塊結構，其中當該金屬凸塊由銅所組成時該帽蓋層包含錫、鎳、金、鈀其中至少一者，當該金屬凸塊由金所組成時該帽蓋層包含錫、鎳、鈀其中至少一者。
  9. 如請求項1之金屬凸塊結構，在鹵素與一高電場其中至少一者之存在下不發生迦凡尼效應(Galvanic effect)效應。
  10. 如請求項1之金屬凸塊結構，位在玻璃覆晶(COG)封裝結構與薄膜覆晶(COF)封裝結構其中一者中。
  11. 一種形成一種金屬凸塊結構的方法，而用於一驅動積體電路(driver IC)中，其包含：提供一底材，其包含：一金屬銲墊；一護層，位於該金屬銲墊上，並定義出位於該金屬銲墊上之一凹穴；一黏著層，位於該凹穴中、覆蓋並直接接觸該金屬銲墊與該護層；以及一圖案化光阻，位於該黏著層上，並包含暴露位於該凹穴中與該護層上之該黏著層之一開口；以一金屬凸塊材料填入該開口中；移除該圖案化光阻，使得該金屬凸塊材料成為位於該黏著層上之一金屬凸塊；移除沒有被該金屬凸塊材料所覆蓋之該黏著層，以部分暴露位於下方之該護層，並使得該金屬凸塊熟化以調整其硬度；以及形成一帽蓋層，以覆蓋該金屬凸塊。
  12. 如請求項11形成一種金屬凸塊結構的方法，其中該帽蓋層自行對準於該金屬凸塊。
  13. 如請求項11形成一種金屬凸塊結構的方法，其中移除該黏著層時，過移除(over-removed)該黏著層，以形成位於該帽蓋層、該黏著層、與該護層間之一嵌穴(notch)。
  14. 如請求項11形成一種金屬凸塊結構的方法，其中該金屬凸塊包含銅與金其中一者。
  15. 如請求項11形成一種金屬凸塊結構的方法，更包含：熟化位於該金屬凸塊上之該帽蓋層，而與該金屬凸塊形成一合金，而防止該金屬凸塊穿出該帽蓋層。
  16. 如請求項11形成一種金屬凸塊結構的方法，其中形成該帽蓋層以完全覆蓋該金屬凸塊，而不形成合金。
  17. 如請求項15形成一種金屬凸塊結構的方法，其中當該金屬凸塊由銅所組成時該帽蓋層包含錫、鎳、金、鈀其中至少一者，當該金屬凸塊由金所組成時該帽蓋層包含錫、鎳、鈀其中至少一者。
  18. 如請求項11形成一種金屬凸塊結構的方法，其中在鹵素與一高電場其中至少一者之存在下，該金屬凸塊不發生迦凡尼效應(Galvanic effect)效應。
  19. 如請求項11形成一種金屬凸塊結構的方法，其中以電鍍將該金屬凸塊材料填入該開口中。
  20. 如請求項11形成一種金屬凸塊結構的方法，其中以無電電鍍形成該帽蓋層。
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TWI600130B (zh) 2017-09-21
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US20140327134A1 (en) 2014-11-06
US20140327133A1 (en) 2014-11-06
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