JP4938346B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP4938346B2 JP4938346B2 JP2006121575A JP2006121575A JP4938346B2 JP 4938346 B2 JP4938346 B2 JP 4938346B2 JP 2006121575 A JP2006121575 A JP 2006121575A JP 2006121575 A JP2006121575 A JP 2006121575A JP 4938346 B2 JP4938346 B2 JP 4938346B2
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- film
- semiconductor device
- solder
- conductive member
- insulating film
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- 239000004065 semiconductor Substances 0.000 title claims description 98
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 229910000679 solder Inorganic materials 0.000 claims abstract description 84
- 239000002184 metal Substances 0.000 claims abstract description 83
- 238000009792 diffusion process Methods 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 230000002265 prevention Effects 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000011347 resin Substances 0.000 abstract description 52
- 229920005989 resin Polymers 0.000 abstract description 52
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 abstract 5
- 238000000034 method Methods 0.000 description 12
- 238000012986 modification Methods 0.000 description 9
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- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000007747 plating Methods 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Description
(a)導電部材40を形成する工程よりも前に、支持基板上に樹脂膜50を形成する工程(図4(a)〜図4(c))
(b)樹脂膜50中に、導電部材40を形成する工程(図5(a))
(c)樹脂膜50および導電部材40上に、当該樹脂膜50および導電部材40に接するようにTi膜62を形成する工程(図5(b)〜図5(c))
(d)Ti膜62上にNi膜66を形成する工程(図6(a)〜図6(c))
(e)導電部材40と電気的に接続されるように、Ni膜66上に半田14を介して半導体チップ10を載置する工程(図7(a)〜図7(c))
(f)半導体チップ10を載置する工程よりも後で且つ半導体チップ20を載置する工程よりも前に、上記支持基板を除去する工程(図8(a)〜図8(b))
(g)導電部材40と電気的に接続されるように、樹脂膜50の半導体チップ10と反対側に半田24を介して半導体チップ20を載置する工程(図9(a)〜図9(b))
10 半導体チップ
12 電極
14 半田
20 半導体チップ
22 電極
24 半田
30 接続部
40 導電部材
42 Cu膜
43 Au膜
44 Ni膜
50 樹脂膜
50a 孔
60 配線膜
62 Ti膜
64 Cu膜
66 Ni膜
70 配線
72 Ti膜
74 Cu膜
76 Ni膜
82 封止樹脂
84 アンダーフィル樹脂
86 アンダーフィル樹脂
90 外部電極端子
92 支持基板
94 メッキシード層
P30 接続部が形成される部分
P70 配線が形成される部分
R1 フォトレジスト
S1 第1面
S2 第2面
Claims (11)
- 絶縁膜と、
前記絶縁膜中に設けられ、上面が前記絶縁膜の第1面よりも下に位置した導電部材と、
前記絶縁膜の前記第1面側に設けられ、第1の半田を介して前記導電部材と電気的に接続された第1の電子回路部品と、
前記絶縁膜の前記第1面と反対の面である第2面側に設けられ、第2の半田を介して前記導電部材と電気的に接続された第2の電子回路部品と、
前記導電部材と前記第1の半田との間に設けられ、前記第1の半田の拡散を防ぐ第1の拡散防止金属膜と、
前記導電部材の少なくとも一部を構成し、前記第2の半田の拡散を防ぐ第2の拡散防止金属膜と、
前記絶縁膜の前記第1面上および前記絶縁膜中に当該絶縁膜および導電部材の前記上面に接して設けられ、前記第1の半田および前記第1の拡散防止金属膜の何れよりも、前記絶縁膜に対する密着性が高い密着金属膜と、
を備えることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記第2の拡散防止金属膜は、前記密着金属膜に接している半導体装置。 - 請求項1または2に記載の半導体装置において、
前記第2の半田は、前記絶縁膜の前記第2面において前記導電部材に接している半導体装置。 - 請求項1乃至3いずれかに記載の半導体装置において、
前記密着金属膜は、Ti膜、TiN膜、W膜、TiW膜、Cr膜、Ta膜またはTaN膜である半導体装置。 - 請求項1乃至4いずれかに記載の半導体装置において、
前記第1および第2の拡散防止金属膜は、Ni膜またはNiV膜である半導体装置。 - 請求項1乃至5いずれかに記載の半導体装置において、
前記第1の拡散防止金属膜上に、前記第1の半田に接して設けられた第1のAu膜を備える半導体装置。 - 請求項1乃至6いずれかに記載の半導体装置において、
前記導電部材上に、前記第2の半田に接して設けられた第2のAu膜を備える半導体装置。 - 請求項1乃至7いずれかに記載の半導体装置において、
前記絶縁膜の前記第1面上に設けられ、前記密着金属膜を構成する材料を含む配線を備える半導体装置。 - 請求項1乃至8いずれかに記載の半導体装置において、
前記絶縁膜の厚みは、20μm以下である半導体装置。 - 絶縁膜中に、上面が前記絶縁膜の第1面よりも下に位置するように少なくとも一部が第2の拡散防止金属膜により構成された導電部材を形成する工程と、
前記絶縁膜の前記第1面上および前記絶縁膜中に、当該絶縁膜および導電部材の前記上面に接するように密着金属膜を形成する工程と、
前記密着金属膜上に、第1の拡散防止金属膜を形成する工程と、
前記導電部材と電気的に接続されるように、前記第1の拡散防止金属膜上に第1の半田を介して第1の電子回路部品を載置する工程と、
前記導電部材と電気的に接続されるように、前記絶縁膜の前記第1の電子回路部品と反対側に第2の半田を介して第2の電子回路部品を載置する工程と、を含み、
前記密着金属膜は、前記第1の半田および前記第1の拡散防止金属膜の何れよりも、前記絶縁膜に対する密着性が高く、
前記第1および第2の拡散防止金属膜は、それぞれ前記第1および第2の半田の拡散を防ぐものであることを特徴とする半導体装置の製造方法。 - 請求項10に記載の半導体装置の製造方法において、
前記導電部材を形成する工程よりも前に、支持基板上に前記絶縁膜を形成する工程と、
前記第1の電子回路部品を載置する工程よりも後で且つ前記第2の電子回路部品を載置する工程よりも前に、前記支持基板を除去する工程と、
を含む半導体装置の製造方法。
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