IT201700087309A1 - Dispositivo elettronico integrato con regione di redistribuzione e elevata resistenza agli stress meccanici - Google Patents
Dispositivo elettronico integrato con regione di redistribuzione e elevata resistenza agli stress meccaniciInfo
- Publication number
- IT201700087309A1 IT201700087309A1 IT102017000087309A IT201700087309A IT201700087309A1 IT 201700087309 A1 IT201700087309 A1 IT 201700087309A1 IT 102017000087309 A IT102017000087309 A IT 102017000087309A IT 201700087309 A IT201700087309 A IT 201700087309A IT 201700087309 A1 IT201700087309 A1 IT 201700087309A1
- Authority
- IT
- Italy
- Prior art keywords
- redistribution
- electronic device
- high resistance
- mechanical stress
- integrated electronic
- Prior art date
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US16/044,190 US20190035728A1 (en) | 2017-07-28 | 2018-07-24 | Integrated electronic device with a redistribution region and a high resilience to mechanical stresses |
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IT201700087318A1 (it) | 2017-07-28 | 2019-01-28 | St Microelectronics Srl | Dispositivo elettronico integrato con regione di redistribuzione e elevata resistenza agli stress meccanici e suo metodo di preparazione |
US11289426B2 (en) * | 2018-06-15 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and manufacturing method thereof |
US11088068B2 (en) * | 2019-04-29 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor packages and methods of manufacturing the same |
KR20210046429A (ko) | 2019-10-18 | 2021-04-28 | 삼성전자주식회사 | 재배선 기판 및 이를 포함하는 반도체 패키지 |
US11715756B2 (en) * | 2021-04-09 | 2023-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device structure and methods of forming the same |
CN113380650A (zh) * | 2021-08-12 | 2021-09-10 | 颀中科技(苏州)有限公司 | 一种金属凸块的制造方法及金属凸块结构 |
IT202100031340A1 (it) * | 2021-12-14 | 2023-06-14 | St Microelectronics Srl | Metodo di fabbricazione di uno strato di ridistribuzione, strato di ridistribuzione, circuito integrato, e metodi per il test elettrico e la protezione del circuito integrato |
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EP3220410A4 (en) * | 2014-11-13 | 2018-07-18 | Renesas Electronics Corporation | Semiconductor device and manufacturing method for same |
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US20040166661A1 (en) * | 2003-02-21 | 2004-08-26 | Aptos Corporation | Method for forming copper bump antioxidation surface |
US20090152100A1 (en) * | 2007-12-14 | 2009-06-18 | Ami Semiconductor, Inc. | Thick metal interconnect with metal pad caps at selective sites and process for making the same |
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US20190035728A1 (en) | 2019-01-31 |
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