CN104143538B - 玻璃倒装接合结构 - Google Patents

玻璃倒装接合结构 Download PDF

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Publication number
CN104143538B
CN104143538B CN201410181177.6A CN201410181177A CN104143538B CN 104143538 B CN104143538 B CN 104143538B CN 201410181177 A CN201410181177 A CN 201410181177A CN 104143538 B CN104143538 B CN 104143538B
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layer
metal coupling
chip bonded
bonded structure
glass flip
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CN104143538A (zh
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林久顺
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Himax Technologies Ltd
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Himax Technologies Ltd
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Abstract

本发明公开一种玻璃倒装接合结构，其包含位于金属焊垫上的护层、位于金属焊垫上又部分位于护层上的黏着层、部分位于凹穴中并覆盖黏着层的金属凸块、完全覆盖金属凸块的帽盖层、引脚层与玻璃层直接相连、与电连接帽盖层和引脚层的导电粒子层。

Description

玻璃倒装接合结构
技术领域
本发明涉及一种玻璃倒装接合结构。本发明特别是涉及一种包含帽盖层与导电粒子层彼此直接接触的玻璃倒装接合结构。
背景技术
应当今消费性电子产品的轻、薄、短、小趋势，电子组装技术也随着不断改进。近几年来，半导体封装技术已发展趋于多样，例如用于显示器的驱动集成电路(IC)的封装技术。
倒装接合技术正是此种集成电路的封装技术。例如，玻璃倒装接合(chip-on-glass,COG)技术是运用玻璃作为封装芯片的载体，将芯片上的金凸块(Gold bump)与透明导电引脚(lead)经由例如各向异性导电胶膜(anisotropic conductive film，ACF)的导电性胶膜相接合(bonding)的技术。
使用金凸块的优势在于，黄金具有极低的化学活性，使得封装后的集成电路的可靠度十分稳定。但是，由于原物料成本不断地增加，所以使用属于贵金属的黄金作为芯片上凸块(bump)的材料，就很难具有价格竞争上的优势。
发明内容
本发明于是提出一种玻璃倒装接合结构。在此玻璃倒装接合结构中，使用帽盖层来完全覆盖金属凸块。另外，玻璃基板上的引脚层，则使用导电粒子层来作为外导电(outward electrically connecting)的媒介。特别是，导电粒子层与帽盖层直接接触。
本发明的玻璃倒装接合结构，包含金属焊垫、护层、黏着层、金属凸块、帽盖层、与基板。位于金属焊垫上的护层，定义出位于金属焊垫上的凹穴。完全位于凹穴中的黏着层则位于金属焊垫上，又部分位于护层上。黏着层直接接触金属焊垫与护层。金属凸块部分位于凹穴中并覆盖黏着层。帽盖层位于金属凸块上并完全覆盖金属凸块，而使得金属凸块完全不会暴露出来。用来电连接帽盖层的基板，包含玻璃层、引脚(lead)层、与导电粒子层(conductive particle layer)。引脚层与玻璃层直接相连。导电粒子层用来电连接帽盖层与引脚层。
在本发明一实施方式中，帽盖层自行对准于金属凸块。
在本发明另一实施方式中，帽盖层、黏着层、与护层间具有嵌穴(notch)。
在本发明另一实施方式中，金属凸块由铜或金所组成。
在本发明另一实施方式中，当金属凸块由铜所组成时，帽盖层包含锡、镍、金、钯其中至少一者。当金属凸块由金所组成时，帽盖层包含锡、镍、钯其中至少一者。
在本发明另一实施方式中，帽盖层与金属凸块形成合金，而防止金属凸块穿出帽盖层。
在本发明另一实施方式中，帽盖层与金属凸块的界面没有合金。
在本发明另一实施方式中，帽盖层为复合结构。
在本发明另一实施方式中，引脚层由透明导电材料所组成。
在本发明另一实施方式中，导电粒子层包含各向异性导电胶。
在本发明另一实施方式中，导电粒子层的面积不小于帽盖层的面积。
在本发明另一实施方式中，导电粒子层与帽盖层对齐。
在本发明另一实施方式中，导电粒子层与帽盖层形成各向异性导电连接。
在本发明另一实施方式中，导电粒子层直接接触该帽盖层。
在本发明另一实施方式中，玻璃倒装接合结构还包含位于护层与玻璃层间的树脂，而夹住并密封引脚层与金属凸块。
在本发明另一实施方式中，树脂层直接接触引脚层与帽盖层。
在本发明另一实施方式中，树脂层填入嵌穴中。
在本发明另一实施方式中，玻璃倒装接合结构位于显示器中。
附图说明
图1至图13是本发明形成玻璃倒装接合结构的方法的示意图；
图8A是仅帽盖层40的内层42填满嵌穴30的示意图；
图10A是仅帽盖层40的内层42填满嵌穴30的示意图；
图14是本发明的玻璃倒装接合结构的一种实例的示意图；
图15是本发明的玻璃倒装接合结构的另一种实例的示意图。
符号说明
1 玻璃倒装接合结构
9 金属凸块结构
10 底材
11 金属焊垫
12 护层
13 黏着层
14’ 光致抗蚀剂层
14 图案化光致抗蚀剂层
15 凹穴
16 开口
20’ 金属凸块材料
20 金属凸块
30 嵌穴
40 帽盖层
41 合金
42 内层
43 最外层
50 玻璃板
51 玻璃层
52 引脚层
53 导电粒子层
53’ 导电粒子
60 封胶
具体实施方式
本发明首先提供一种形成玻璃倒装接合结构的方法，可以将驱动集成电路芯片(driver IC)与显示器的电路进行电连接，特别适用于玻璃倒装接合封装(chip-on-glass，COG)技术中。图1至图13绘示本发明形成玻璃倒装接合结构的方法。首先，在第一方面先说明如何将金属凸块形成在底材上。如图1所绘示，提供底材10。底材10包括金属焊垫11、护层12与黏着层13。
绝缘层9为底材10的基础部分，用来支撑其它的元件，例如用来支撑金属焊垫11、护层12、黏着层13与图3中的图案化光致抗蚀剂层14。金属焊垫11可以是一种质轻的金属材料，例如铝，并经过图案化。但是，其它的金属也可采用，而并不限于铝。
护层12即位于金属焊垫11之上，同时还具有图案以定义凹穴15，使得凹穴15也位于金属焊垫11之上。护层12可以是一种电绝缘的材料，例如氮化硅或是氧化硅。通常来说，凹穴15的大小会小于金属焊垫11的大小。
黏着层13又位于凹穴15之中。此外，黏着层13还会覆盖金属焊垫11与护层12，使得黏着层13会直接接触金属焊垫11与护层12。黏着层13用来帮助后续形成的金属凸块材料(图未示)牢牢地附着在凹穴15之中。黏着层13可以是一种合金层，例如钛钨合金层。
黏着层13的形成方法可以是，利用溅镀一层钛钨合金与晶种层，例如铜的方法，来均匀地覆盖底材10，例如完全地覆盖金属焊垫11、护层12、与凹穴15。结果例示于图1中。形成图案化光致抗蚀剂层14的方式，可以参考如下所示的方式。
其次，如图2所绘示，将光致抗蚀剂层14’整体形成在黏着层13上，并同时填满凹穴15。光致抗蚀剂层14’可以是光敏性的材料，例如是有机的光敏材料。
再来，如图3所绘示，将光致抗蚀剂层14’图案化。图案化的光致抗蚀剂层14是形成在黏着层13上来定义出开口16。开口16用来暴露出位于凹穴15中与护层12上的黏着层13，因此，在本发明的一实施例中，开口16会稍微大于凹穴15。换句话说，开口16可以用来定义出后续所形成的金属凸块材料(图未示)所在的空间，而此空间本身即容置了凹穴15。
然后，整体的光致抗蚀剂层14’会经过适当的曝光与显影步骤，而转换成图案化光致抗蚀剂层14，而具有曝光与显影所赋与预定的图案。图案是经由开口16所定义出的，其结果即绘示于图3所中。
接下来，如图4所绘示，使用金属凸块材料20’来填入开口16中。请注意，金属凸块材料20’可能只仅仅填入开口16中，而没有填满开口16。黏着层13即因此夹置于金属凸块材料20’，与金属焊垫11或护层12之间。例如，由于金属焊垫11与黏着层13均为导电性材料，所以金属凸块材料20’可以由电镀的方式来形成。视情况需要，金属凸块材料20’可以是钯、银、铜或是金，以寻求较佳的导电性，与越低越好的化学活性。
一但将金属凸块材料20’形成好了之后，就不再需要图案化光致抗蚀剂层14了。于是，如图5所绘示，移除图案化光致抗蚀剂层14，使得金属凸块材料20’成为各自独立的金属凸块20。可以使用传统的方式来移除图案化光致抗蚀剂层14。于是，各自独立的金属凸块20于是完全位于黏着层13之上，并直接接触黏着层13。
由于黏着层13是导电性的，这会导致所有的金属凸块20彼此短路，所以多于的黏着层13必须要移除。再来，如图6所绘示，没有被金属凸块20所覆盖的黏着层13经由蚀刻步骤来移除，又部分地暴露出下方的护层12，使得所有的金属凸块20，通过电绝缘材料，亦即护层12的隔离，成为彼此电绝缘。如此一来，所有的金属凸块20即自我对准于黏着层13。例如，可以使用过氧化氢来蚀刻黏着层13。视情况需要，蚀刻步骤后还可以加热金属凸块20，例如在250℃-300℃的退火条件下维持约30分钟，来将金属凸块20调整到所需的硬度，例如不超过130维氏硬度(Hv)，较佳者不大于110维氏硬度，更佳者介于50维氏硬度至110维氏硬度之间。
此时可以注意到，在图6中，在移除黏着层13时，在金属凸块20、黏着层13、与护层12之间又形成了一嵌穴30，因为蚀刻步骤不只会完全移除没有被金属凸块20所覆盖的黏着层13，蚀刻步骤还会更进一步移除没有被金属凸块20所覆盖的黏着层13以外的黏着层13，例如，夹置于金属凸块20、与护层12间的黏着层13。而结果是，在金属凸块20、黏着层13、与护层12之间形成了一只嵌穴30，其成为本发明结构的特征之一。嵌穴30可能横向深入1微米(μm)-2微米左右。
由于各自独立的金属凸块20仍然因为暴露于周围的大气环境中而失之脆弱，所以需要再特意形成帽盖层来完全覆盖金属凸块20，使得金属凸块20不会暴露于周围的大气环境中。请参考图7、图8、图8A所绘示，形成帽盖层40来完全覆盖金属凸块20，于是得到受保护的金属凸块结构9。帽盖层40可以包含内层42、最外层43的多种保护性的材料。如果是铜制成的金属凸块20，帽盖层40可以包含锡、镍、金、钯其中至少一者。如果是金制成的金属凸块20，帽盖层40可以包含锡、镍、钯其中至少一者。如果是银制成的金属凸块20，帽盖层40可以包含锡。如果是钯制成的金属凸块20，帽盖层40可以包含锡。帽盖层40可以不含镍。不过，如图7所绘示，所形成帽盖层40可能只会减小嵌穴30的尺寸，或是如图8所绘示，因为内层42与最外层43一起完全填满了嵌穴30，使得嵌穴30消失不见，或是如图8A所绘示，仅仅是帽盖层40的内层42填满嵌穴30。
较佳者，可以经由无电极电镀法来形成帽盖层40，例如可以在小于4的酸碱值、硫酸盐的辅助下进行无电极电镀法。由于护层12是一种电绝缘材料，帽盖层40只会特定而专一地形成在金属凸块20上。换句话说，帽盖层40即自我对准在金属凸块20上。帽盖层40可以是单层结构或是复合结构，而包含多层的帽盖材料，例如帽盖层40可以不含镍。另外，依据无电极电镀法的不同电镀配方或是电镀条件，帽盖层40还可以有不同的厚度与其它的形状。例如，帽盖层40可能是合金41、内层42、与最外层43的搭配或组合。较佳者，最外层43为金，其优点在于有利于重工(re-work)，又可以减低材料的成本。当帽盖层40含钯时，钯层的厚度可以是0.15微米-0.4微米左右。当帽盖层40含金时，金层的厚度可以是在2微米以下，较佳者不大于0.1微米，甚至于可以只有0.006微米而已。表1列举电镀帽盖层40的可行步骤与制作工艺参数。其中在每个步骤之后，均可以再加入纯水洗涤的清洁步骤。
表1
电镀步骤 温度(℃) 酸碱(pH)值 时间(秒)
金属凸块清洁步骤 室温 小于0 30-60
酸处理步骤 室温 小于0 30-120
活化晶种步骤 室温 1.1-2 60-360
镀钯步骤 50-54 7.6 600-1200
镀镍步骤 50-54 7.6 600-1200
镀金步骤 85 4.7-5.3 1200以内
在本发明的一实施例中，帽盖层40会完全包覆金属凸块20但又不与金属凸块20形成伴生的合金层，例如铜不容易与镍或钯形成伴生的合金层。在本发明的一实施例中，又可以进行一熟化(curing)步骤，使得帽盖层40会完全包覆金属凸块20而且与金属凸块20形成合金。例如，请参考图9或图10所绘示，形成在金属凸块20上的帽盖层40被加热到，例如在150℃～180℃与30分钟的条件下，与金属凸块20形成合金41。图9绘示，帽盖层40只会减小嵌穴30的尺寸。图10所绘示，内层42与最外层43一起使得嵌穴30消失不见、或是如图10A所绘示，仅仅是帽盖层40的内层42填满嵌穴30。铜与锡在不同的条件下，可以形成多种的合金，例如Cu3Sn、Cu6Sn5、Cu41Sn11、或是Cu10Sn3。
合金41的形成，刻意用来防止金属凸块20在极端的情形下可能穿过帽盖层40。在帽盖层40的保护下，不管有或是没有合金41，金属凸块20都不会暴露于周围的大气环境中。
接下来，另一方面将说明如何将金属凸块20与玻璃板(glass plate)形成电连接。首先，如图11所绘示，提供玻璃板50。玻璃板50包含有玻璃层51、引脚(lead)层52、与导电粒子层(conductive particle layer)53的一种基板。基板用来与金属凸块20形成电连接。玻璃板50即作为金属凸块20的支撑结构。玻璃层51是玻璃倒装接合封装所用的玻璃材料。引脚层52位于玻璃层51上并与玻璃层51直接相连。引脚层52较佳是透明的导电材料，例如铟锡氧化物(ITO)、掺铝氧化锌(AZO)、掺镓氧化锌(GZO)、掺铟氧化锌(IZO)等。导电粒子层53会部分覆盖引脚层52，例如只覆盖接触面，而其中的导电粒子53’即使得导电粒子层53具有导电性。导电粒子层53较佳为各向异性导电胶，而每个金属凸块20(例如接触面为1000平方微米(μm))上会带有至少3个导电粒子53’。
其次，如图12所绘示，将玻璃板50上的引脚层52对准底材10上的金属凸块20，来将引脚层52与金属凸块20彼此对准贴合在一起。如图13所绘示，经过适当时间与温度的压合，将引脚层52与金属凸块20的接触面彼此对准贴合在一起。于是导电粒子层53中的导电粒子53’可以同时接触引脚层52与帽盖层40的接触面，而得到导电粒子53’电连接引脚层52与帽盖层40的结果。
还有，如图14所绘示，为了能将引脚层52与金属凸块20接合能更加密封牢固，还可以涂上封胶60，使得封胶涂在玻璃板50与护层12之间，来密封引脚层52与金属凸块20。所使用的封胶种类，例如可以是以环氧树脂(epoxy)为主要材料底部填充胶(underfill)，利用毛细作用填入玻璃板50与护层12之间的空隙，所以涂上封胶的步骤可以在引脚层52与金属凸块20彼此对准贴合在一起之前进行，或是在引脚层52与金属凸块20彼此对准贴合在一起之后才进行。由于封胶60填入玻璃板50与护层12之间的空隙，所以可以密封引脚层52与金属凸块20。封胶60也可能填入嵌穴30中。
在经过以上的步骤后，就可以得到一种玻璃倒装接合结构1，如图14或图15所绘示。本发明的玻璃倒装接合结构1，包含底材10、金属焊垫11、护层12、黏着层13、金属凸块20、帽盖层40、玻璃板50、导电粒子层53与封胶60。绝缘层9为底材10的基础部分，用来支撑其它的元件，例如金属焊垫11、护层12与黏着层13。金属焊垫11可以是一种质轻的金属材料，例如铝，并经过图案化。但是，其它的金属也可采用，而并不限于铝。护层12可以是一种电绝缘的材料，例如氮化硅或是氧化硅。黏着层13可以是一种合金层，例如钛钨合金层，用来帮助金属凸块20牢牢地附着在凹穴15之中，所以黏着层13会直接接触金属焊垫11与护层12。
金属凸块20部分位于凹穴15中并覆盖黏着层13，而可以是钯、银、铜或是金，以寻求较佳的导电性，与越低越好的化学活性。还有，在金属凸块20、黏着层13、与护层12之间还可能会有一只嵌穴30，其成为本发明结构的特征之一。
帽盖层40位于金属凸块20上并完全覆盖金属凸块20，而使得金属凸块20完全不会暴露出来。帽盖层40可以是单层结构或是复合结构。如图14所绘示，单层结构的帽盖层40只会完全包覆金属凸块20，但又不与金属凸块20形成伴生的合金层，例如铜不容易与镍或钯形成伴生的合金层。或是如图15所绘示，复合结构的帽盖层40，可以包含多层的帽盖材料，例如合金41、内层42及/或外层43。帽盖层40可能会减小嵌穴30的尺寸，或是因为完全填满了嵌穴30，而使得嵌穴30消失不见，如图8所绘示。
帽盖层40可以包含多种保护性的材料，而可能是合金41、内层42、与最外层43的组合。如果是铜制成的金属凸块，帽盖层40可以包含锡、镍、金、钯其中至少一者。如果是金制成的金属凸块，帽盖层40可以包含锡、镍、钯其中至少一者。如果是银制成的金属凸块，帽盖层40可以包含锡。如果是钯制成的金属凸块，帽盖层40可以包含锡。帽盖层40也可以不含镍。与金属凸块20直接接触的帽盖材料，例如内层42，可以与金属凸块20形成合金41。铜与锡在不同的条件下，可以形成多种的合金，例如Cu3Sn、Cu6Sn5、Cu41Sn11、或是Cu10Sn3。合金41的形成，刻意用来防止金属凸块20在极端的情形下可能穿过帽盖层40。
玻璃板50是包含有玻璃层51、引脚层52、与导电粒子层53的一种基板。玻璃板50即作为金属凸块20的支撑结构。玻璃层51是玻璃倒装接合封装所用的玻璃材料。引脚层52位于玻璃层51上并与玻璃层51直接相连。引脚层52较佳是透明的导电材料，例如铟锡氧化物(ITO)、掺铝氧化锌(AZO)、掺镓氧化锌(GZO)、掺铟氧化锌(IZO)等。导电粒子层53会部分覆盖引脚层52，而其中的导电粒子53’即使得导电粒子层53具有导电性。导电粒子层53较佳为各向异性导电胶，而每个金属凸块20(例如接触面为1000平方微米(μm))上会带有至少3个导电粒子53’。
封胶60涂在玻璃板50与护层12之间，来密封引脚层52与金属凸块20。所使用的封胶种类，例如可以是以环氧树脂为主要材料底部填充胶。由于封胶60填入玻璃板50与护层12之间的空隙，所以可以密封引脚层52与金属凸块20，封胶60也可能填入嵌穴30中与直接接触引脚层52/导电粒子层53。

Claims (16)

1.一种玻璃倒装接合(Chip on Glass,COG)结构，包含：
金属焊垫；
护层，位于该金属焊垫上，并定义出位于该金属焊垫上的凹穴；
黏着层，位于该凹穴中、位于该金属焊垫上、又部分位于该护层上，其中该黏着层直接接触该金属焊垫与该护层；
金属凸块，部分位于该凹穴中并覆盖该黏着层，该金属凸块通过热处理来达到所需的硬度；
帽盖层，位于该金属凸块上并完全覆盖该金属凸块，而使得该金属凸块不会暴露出来，其中该帽盖层与该金属凸块又通过一熟化步骤来形成一合金，而防止该金属凸块穿出该帽盖层；
基板，用来电连接该帽盖层，其包含：
玻璃层；
引脚(lead)层，与该玻璃层直接相连；
导电粒子层(coductive layer)，电连接该帽盖层与该引脚层。
2.如权利要求1的玻璃倒装接合结构，其中该帽盖层自行对准于该金属凸块。
3.如权利要求1的玻璃倒装接合结构，其中该帽盖层、该黏着层、与该护层间具有嵌穴(notch)。
4.如权利要求1的玻璃倒装接合结构，其中该金属凸块由铜与金其中一者所组成。
5.如权利要求4的玻璃倒装接合结构，其中当该金属凸块由铜所组成时该帽盖层包含锡、镍、金、钯其中至少一者，当该金属凸块由金所组成时该帽盖层包含锡、镍、钯其中至少一者。
6.如权利要求1的玻璃倒装接合结构，其中该帽盖层为一复合结构。
7.如权利要求1的玻璃倒装接合结构，其中该引脚层由透明导电材料所组成。
8.如权利要求1的玻璃倒装接合结构，其中该导电粒子层包含各向异性导电胶。
9.如权利要求1的玻璃倒装接合结构，其中该导电粒子层的面积不小于该帽盖层的面积。
10.如权利要求1的玻璃倒装接合结构，其中该导电粒子层与该帽盖层对齐。
11.如权利要求1的玻璃倒装接合结构，其中每个该金属凸块上有至少3个导电粒子层中的导电粒子。
12.如权利要求1的玻璃倒装接合结构，其中该导电粒子层直接接触该帽盖层。
13.如权利要求1的玻璃倒装接合结构，还包含：
树脂，位于该护层与该玻璃层之间，而夹住并密封该引脚层与该金属凸块。
14.如权利要求13的玻璃倒装接合结构，其中该树脂层直接接触该引脚层与该帽盖层。
15.如权利要求13的玻璃倒装接合结构，其中该帽盖层、该黏着层、与该护层间具有嵌穴(notch)，该树脂层填入该嵌穴中。
16.如权利要求1的玻璃倒装接合结构，在一显示器中。
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