CN103400818B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN103400818B
CN103400818B CN201310353825.7A CN201310353825A CN103400818B CN 103400818 B CN103400818 B CN 103400818B CN 201310353825 A CN201310353825 A CN 201310353825A CN 103400818 B CN103400818 B CN 103400818B
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Prior art keywords
semiconductor chip
pad
power supply
pads
semiconductor device
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CN201310353825.7A
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Chinese (zh)
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CN103400818A (zh
Inventor
小松干彦
日高隆雄
木村纯子
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication of CN103400818A publication Critical patent/CN103400818A/zh
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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    • H01L2924/1904—Component type
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    • H01L2924/19101—Disposition of discrete passive components
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  • Semiconductor Integrated Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
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