CN102246287B - 用于冷却晶片的装载锁和冷却所述晶片的方法 - Google Patents
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Abstract
本发明提供用于从低压环境到高压环境冷却和传送晶片的设备和方法。一设备可包含一冷却底座和用于将所述晶片固持在所述冷却底座上方的一套支撑件。所述晶片与所述冷却底座之间的平均间隙可不大于约0.010英寸。可使用通气气体来在所述传送期间增加所述设备内的压力。在特定实施例中,通气气体包括氮气。
Description
对相关申请案的交叉参考
本申请案主张2008年12月11日申请的USSN:12/333,239的权益和优先权,所述USSN:12/333,239出于所有目的以引用的方式全部并入到本文中。
技术领域
本发明大体上涉及用于使用装载锁来传送晶片的方法和设备,且更明确地说,涉及用于在较低压与较高压环境之间传送晶片时冷却所述晶片的方法和设备。
背景技术
许多半导体制造操作是在低压和高温下执行的。使用装载锁在低压与高压环境之间传送晶片的同时,常常将处理模块保持在低压下。装载锁有效隔离两个环境,并消除对在两个压力等级之间重复循环处理模块的需求,所述处理模块通常具有较大内部体积。相反,在晶片传送期间,仅对小体积装载锁进行循环。一些配置包含与处理系统的低压侧上的一个或一个以上内部晶片处置模块集成的若干个处理模块。晶片在不传送到高压环境的情况下可能经历若干个过程。
在处理之后,必须从低压处理模块移除晶片,并将所述晶片放置到大气环境中以进行(例如)存储。此类晶片在暴露于氧气之前可能需要冷却到特定温度,以防止氧化、漏气以及对存储模块的破坏。快速而统一的冷却是非常理想的,但常常难以实现。为了维持高通过量,整个传送过程仅有几秒。常常需要(通常)通过将晶片靠近冷表面(例如,冷却底座)而定位来使晶片冷却200℃以上。晶片常常是不平坦的,且需要在冷表面与默认晶片位置之间有相对较大的设定距离,以避免直接接触。因为针对每一晶片而个别地调整所述距离是不实际的,所以必须将分离距离设置为非最佳值(对应于可能的最坏情况下的晶片变形),从而导致大体上不良传热。因此,装载锁使用具有较高传热系数的昂贵的通气气体(例如,氦气),且甚至需要延长的冷却周期。在冷却表面与晶片之间的不统一的间隙还导致不均匀的冷却,从而在弓起而离开(远离)冷却表面的区域中留下热点(hot spot),这可导致过多的应力,从而很可能导致晶片破裂。
一些解决方案包含用以修改热变形的晶片的形状的静电或真空夹持机制。不幸的是,这些解决方案需要与晶片背侧有较大的接触面积,进而增加了破坏晶片以及在接触点处不均匀的冷却的风险。此外,所需要的夹持机制是复杂且昂贵的。
因此,需要在装载锁中晶片传送期间提供有效冷却的改进的方法和设备。
发明内容
本发明提供一种装载锁,其中晶片与冷却底座分离平均不大于约0.010英寸(在由底座支撑的晶片的表面上方)。此类较小间隙允许使用廉价的通气气体,并缩短所需的冷却时间。在晶片的前侧与后侧之间的所设计的压差将弓起的晶片与底座的接触销相抵而整平。通过控制装载锁内的通气气体的流量而产生所述差。可通过以下各项的发明性组合来维持此条件:动态控制装载锁内的压力分布、通气气体口(尤其是其形状、位置以及定向)、通气气体流动速率、流动路径以及其它参数。
在一个实施例中,装载锁包含:入口传送口和出口传送口;底座,其具有用于从晶片吸收热的表面;通气气体口,其位于底座表面上方,且经配置以用于传递通气气体;以及一套支撑件,其提供于底座表面上。在特定实施例中,一套包含至少四个支撑件,当晶片位于所述支撑件上时,所述支撑件的高度在晶片与底座表面之间提供不大于约0.010英寸的平均间隙。在较具体实施例中,所述平均间隙不大于约0.005英寸,且在更具体实施例中,不大于约0.002英寸。
可由装载锁的盖子和主体界定通气气体口。在特定实施例中,通气气体口的开口的直径介于约4英寸与8英寸之间,或者更具体来说,介于约6英寸与6.5英寸之间。在相同的或其它实施例中,所述开口的宽度介于约0.010英寸与0.100英寸之间。通气气体源可耦合到所述口,且提供大体上不含氦气的通气气体。在特定实施例中,通气气体包含氮气。
装载锁内的底座的形状可经设计以提供统一的传热。在特定实施例中,底座表面具有凸面形状。在晶片的边缘与中心周围的间隙之间的差可介于约0.001英寸与0.010英寸之间。在较具体实施例中,此差介于约0.001英寸与0.003英寸之间。
支撑件分布于底座表面上方,以相对于底座表面来控制晶片的构型。在特定实施例中提供至少十个支撑件。所述支撑件可布置于至少两个环形中。第一环形距底座的中心约4英寸与6英寸之间而定位,且第二环形距底座的中心约1英寸与3英寸之间而定位。可将至少六个支撑件提供于第一环形内,并将至少三个支撑件提供于第二环形内。所述支撑件的尖端可在底座的表面上方提供平坦的平面。
支撑件可具有不同的设计,且由经选择以在不引起破坏的情况下确保对晶片的足够支撑的材料制成。举例来说,支撑件可具有圆形尖端。在特定实施例中,所述支撑件的直径介于约0.020英寸与0.125英寸之间。所述支撑件可由热绝缘材料制成。在相同的或其它实施例中,所述支撑件包含导电陶瓷材料。
所述装载锁还可具有相关联的控制器,所述相关联的控制器含有用于以下步骤的程序指令:将晶片提供到所述装载锁中;将所述晶片定位在支撑件上;关闭入口传送口;控制所述装载锁内的压力,以使所述晶片保持与支撑件的至少70%接触;以及随后打开出口传送口,并移除所述晶片。本发明的特定实施例包含一种实践上文所列出的指令的方法。可通过提供大体上不含氦气的通气气体来控制压力。所述压力在控制操作期间可在至少30托每秒的速率下增加。在相同的或其它实施例中,可在介于约10标准升每分钟与50标准升每分钟之间的流动速率下提供通气气体。所述压力控制操作可持续少于15秒。晶片的温度在此时间期间可减少至少200摄氏度。
下文将参看相关联的图式更详细地陈述本发明的这些和其它特征与优点。
附图说明
图1说明关于不同通气气体的有效传热系数随晶片与冷却底座之间的间隙而变的图表。
图2是包含装载锁、处理模块、内部和外部晶片传送模块以及晶片存储模块的整体半导体处理系统的示意性说明。
图3A是根据本发明的一个实施例的装载锁系统的横截面图,其中冷却底座处于降低的位置,且晶片由在所述底座上方的中间支撑销支撑。
图3B是根据本发明的一个实施例的装载锁系统的横截面图,其中冷却底座处于升高的位置,且晶片由底座晶片支撑件支撑。
图4A是根据本发明的一个实施例的装载锁内的底座的示意性俯视图,其展示底座晶片支撑件位于晶片下方,且边缘定位销位于晶片的周边周围。
图4B是底座的示意性侧视图,其中凸面顶部表面和晶片由具有可变高度的底座晶片支撑件支撑。
图5A是根据本发明的一个实施例的包含具有通气口的盖子和装载锁的主体的组合件的横截面图。
图5B是根据本发明的一个实施例的用于将通气气体供应到装载锁中的通气口和入口路径的放大的横截面图。
图6说明根据本发明的一个实施例的晶片传送和冷却过程的流程图。
图7说明根据本发明的特定实施例的装载锁内的整体压力在传送和冷却过程期间随时间而变的图表。
具体实施方式
在以下描述中,陈述了许多具体细节以便提供对本发明的全面理解。可在无这些具体细节中的部分或全部的情况下实践本发明。在其它例子中,未详细描述众所周知的过程操作,从而不会不必要地模糊本发明。尽管将结合具体实施例来描述本发明,但将理解,不希望将本发明限于所述实施例。
介绍
使用装载锁来在两个不同压力等级下的环境之间传送晶片。装载锁常常用来在将晶片从低压处理侧传送到大气压存储侧时冷却所述晶片。出于此描述的目的,“低压”和“高压”为适用于许多不同压力状态的术语。一般来说,其通常在装载锁的低压侧和装载锁的高压侧的情况中表示两个不同的压力。在特定实施例中,“低压”指介于约10-9托(1毫微托)与100托之间的压力。在较具体的范围内,低压介于约5x10-4托(0.5毫托)与1托之间。在另一实施例中,低压介于20托与60托之间。在需要装载锁的许多应用中,在低压下执行生产热晶片的过程。
高于所述低压的任何压力等级被称为“高压”。在某一实施例中,高压为周围压力或其附近压力。在其它实施例中,低压小于周围压力。
在此描述的情况中,“通气”是通过(例如)供应通气气体中的一者或一者以上来增加装载锁内的压力。所述装载锁通常配备有用以引入通气气体的通气口。传送和冷却过程可具有一个或一个以上通气循环。
“抽气(Pumping)”或“抽真空(vacuuming)”指通过(例如)打开真空口并使气体从装载锁逸出而减少所述装载锁内的压力。可将真空泵或真空设施线附接到所述真空口。在特定实施例中,通气与抽气同时发生。举例来说,通气和真空口两者均是开放的,且通气气体被同时引入到装载锁和从装载锁移除。可完成这来(例如)控制晶片的相对侧上的压差,而与装载锁内的压力变化无关。
晶片可从处于大体上高于对于将晶片暴露于周围条件下以及将晶片放置到存储模块中可接受的温度的处理模块出来。举例来说,晶片在典型的CVD过程之后处于约350℃。其在暴露于氧气之前必须冷却到低于70℃。内部传送系统仅花费两到三秒来将晶片从处理模块移动到装载锁,以及花费再多几秒(通常,10到15秒)来将所述装载锁在移除晶片之前带入大气压。通常,晶片没有额外的时间来冷却,以便确保高过程通过量。
晶片在暴露于较冷的环境之后便立刻开始冷却。其可以从处理模块的加热的底座移除为开始。此时温度梯度通常是最大的。然而,如果周围气体处于低压下(例如,低于100托,且通常低达1托,且甚至更低),那么传热速率仍然可能较低。这两个因素的组合(高温度梯度和低传热系数)可导致传送期间逐渐从晶片损耗热。在一个实例中,晶片在传送过程的前1到5秒期间从其在处理模块中的初始温度损耗介于约10℃与40℃之间。
而在装载锁中,晶片继续损耗热。在特定实施例中,晶片定位于冷却底座的顶部上,所述冷却底座从晶片移除大量的热。除了其它因素之外,所传送的热的数量取决于晶片与冷却底座之间的距离。距离越小,所提供的传热就越好。然而,晶片不应触碰所述底座,以便避免冷点、粒子污染以及机械破坏。图1说明关于处于约100托的不同通气气体的有效传热系数随着晶片与冷却底座之间的平均间隙而变的图表。所述图表指示有效传热系数大体上随着平均间隙低于0.2mm到0.3mm(或者约0.008英寸到0.012英寸)而增加。举例来说,已证明廉价的氮气(线108)在0.2mm(0.008英寸)间隙下与昂贵得多的氦气(线104)在1mm(0.039英寸)间隙下同样有效。其它作为模型的通气气体(氢气(线102)和氖气(106))已展示类似的现象。还确定了这些气体在约为20托的压力下即刻达到其最大传热系数值的约80%,且随后为高于约100托的压力维持大体上恒定的传热系数。
所有的晶片从具有扭曲的形状的处理模块(即,其偏离真正的平坦)到达。然而,扭曲的相对量级可千差万别;晶片形状的总体可变性可为~0.030英寸。在氦气的情况下(其具有较高的传热系数),适当的间隙为~0.035英寸;在氮气的情况下(具有低得多的传热系数),间隙必须小得多,例如,~0.005英寸。要解决的难题是在面对晶片形状的0.030英寸可变性的同时,一致地(从晶片到晶片)维持0.005英寸的间隙。发明人面临的挑战是找到以可再生方式(reproducibly)整平装载锁中的加热的晶片,且在同时极大地减少晶片表面与传热表面(例如,底座)之间的平均距离的方式,以允许在存在传热相对不良的气体时快速冷却。
在下文进一步描述的特定实施例中,由略微延伸到底座的顶部表面上方的最小接触面积(MCA)支撑件来维持小间隙。MCA支撑件以此方式定位,以便用其尖端界定一平面。在一些实例中,底座的顶部表面具有曲率或某一其它非平面形状。所述形状导致底座的一些部分(通常为边缘)比其它部分(通常为中心)更远离晶片。在此实例中,“中心间隙”是对应于水平对准的晶片的中心的间隙,且“边缘间隙”是对应于此晶片的边缘的间隙。在具体实施例中,边缘间隙沿着晶片的整个周边是一样的。“平均间隙”是中心间隙和边缘间隙的数值平均。
使用边缘与中心间隙之间的差来实现统一的冷却。在不努力使晶片的半径上的传热变得均匀的情况下,晶片往往将从边缘冷却得较快。在特定实施例中,晶片与底座之间的通气气体流动速率的构型驱动底座构型。在特定实施例中,通气气体从底座外引入到装载锁中,且流到底座与晶片之间的间隙中。流动速率在晶片的边缘周围最高,且在中心处最低。如果与表面接触的流体的速度较高,那么表面与流体之间的传热就较大。因此,在一些实施例中,边缘间隙可大于中心间隙,以补偿在晶片的边缘周围的通气气体的较高流动速率。换句话说,使用凸面底座形状来促进从晶片的中心的传热。
设备
图2展示根据本发明的特定实施例的半导体处理系统200。可在晶片存储模块202中将晶片提供给系统。举例来说,可使用前开式标准晶片盒(FOUP)来提供晶片以及从系统接纳晶片。外部晶片处置系统204可包含机器人臂,并用以在晶片存储模块202与装载锁206之间传送晶片。所述晶片通过对应的外部口而放置到装载锁206中和从装载锁206移除。晶片存储模块202和外部晶片处置系统204是仅说明的在高压下(例如,系统200所处的生产设施的周围压力)操作的组件。在替代实施例中,可使用装载锁206来在处理系统的两个内侧之间传送晶片,所述处理系统的两个内侧在两者均低于周围压力的不同压力等级下操作。
装载锁206在低压与高压之间循环,从而使外侧与处理侧隔离开。此方法消除对于在每一晶片的每一处理后对整个低压侧(例如,内部晶片处置模块208和处理模块210)进行通气且随后抽气的需要。在特定实施例中,装载锁206经设计具有足以容纳一个或一个以上晶片的最小内部体积,并允许接近晶片处置系统的机器人臂。在特定实施例中,装载锁206的体积可介于约1升与10升之间。在较具体的实施例中,装载锁体积可介于约2升与5升之间。
低压侧可包含一个或一个以上内部晶片处置模块208和一个或一个以上处理模块210,例如,一个或一个以上物理气相沉积(PVD)腔室、化学气相沉积(CVD)腔室、原子层沉积(ALD)腔室、脱气模块、预清洗模块、反应预清洗(RPC)模块、冷却模块、额外装载锁、支柱以及其它类型的模块。尽管图2的说明性实例仅包含三个处理模块210和一个内部晶片处置模块208,但系统200可具有任何数目的模块和模块的组合。内部晶片处置模块208是用来在不同的处理模块210和装载锁206之间传送晶片。
本发明不限于上文所述的半导体晶片处理系统配置。举例来说,可将一个或一个以上多站反应器耦合到传送模块,所述传送模块耦合到一个或一个以上装载锁。举例来说,合适的半导体处理工具包含由加利福尼亚州的圣荷西市(San Jose,CA)的诺发系统(Novellus System)生产的Novellus Sequel、Inova、Altus、Speed以及不同的Vector系统(例如,Vector Extreme、Vector Express、Vector AHM)。反应器无需为多站反应器,而可为单站反应器。类似地,装载锁可为多晶片装载锁,例如,双晶片装载锁。
处理系统200可包含系统控制器210,所述系统控制器210可从系统的各种模块接收反馈信号,并将控制信号供应回到同一模块或其它模块。系统控制器210可控制装载锁206的操作,例如,循环的定时、压力等级、通气和冲洗气体的定时和流动速率、抽气以及许多其它过程变量。在本发明的总体方面中,控制系统210可使装载锁206的操作相对于其它模块(例如,外部晶片处置模块204和内部晶片处置模块208)同步化。在本发明的较具体方面中,系统控制器210可控制装载锁206的通气和冲洗气体线和/或真空线的阀和流量计以及打开和关闭装载锁206的内部和外部口的机制的操作。系统控制器210可为负责各种处理模块、支柱等的操作的整体系统范围内的控制器的一部分。
在所描绘的实施例中,使用系统控制器210来在将衬底晶片提供到装载锁、关闭装载锁的传送口、对装载锁进行通气、对装载锁进行抽气、打开装载锁的口以及移除所述晶片时控制过程条件。
系统控制器210可包含一个或一个以上存储器装置,以及一个或一个以上处理器。处理器可包含CPU或计算机、模拟和/或数字输入/输出连接、步进电动机控制器板等。在所述处理器上执行用于实施适当的控制操作的指令。可将这些指令存储于与控制器相关联的存储器装置上,或者可将所述指令提供到网络上。
在特定实施例中,系统控制器210控制处理系统的所有活动。所述系统控制器执行系统控制软件,所述系统控制软件包含用于控制处理操作的定时、压力等级、流动速率以及具体过程的其它参数的指令集。在一些实施例中可使用存储于与所述控制器相关联的存储器装置上的其它计算机程序、脚本或例程。
通常,存在与系统控制器210相关联的用户界面。所述用户界面可包含显示屏、用以显示过程条件的图形软件,以及例如指向装置、键盘、触摸屏、麦克风等用户输入装置。
可以任何常规计算机可读编程语言来编写用于控制以上操作的计算机程序代码:例如,汇编语言、C、C++、Pascal、Fortran或其它。由处理器来执行经编译的目标代码或脚本,以执行在程序中所识别的任务。
可由系统控制器的模拟和/或数字输入连接提供用于监视所述过程的信号。在处理系统的模拟和数字输出连接上输出用于控制所述过程的信号。
图3A说明当冷却底座310处于降低的位置时在晶片306的装载或卸载期间装载锁的横截面图。装载锁具有主体302和使装载锁从外部环境密封的盖子304。在特定实施例中,盖子304具有通气口。所述盖子还可连同主体302一起形成通气路径,以用于从所述口将通气气体供应到进一步描述于图4A和图4B的情况中的装载锁中。
冷却底座310通常由铝、不锈钢或任何其它合适的导热材料制成。冷却底座310可具有用于使冷却介质在底座中循环的一套通道。在特定实施例中,冷却介质可主要为水,或者为维持在介于约(例如)15℃与35℃之间的其它合适的液体。在其它实施例中,使用了其它循环传热介质,例如,超冷氮气或galden。冷却底座310可具有驱动器318,驱动器318经附接以用于在底座310的降低的位置(展示于图3A中)与升高的位置(展示于图3B中)之间的垂直方向上移动底座310。在其它实施例中,所述底座是固定的,且晶片抬升机(wafer lift)提供对晶片的初始支撑,且随后带动所述晶片朝向用于传热的底座。
冷却底座310可具有用于晶片306相对于冷却底座310的水平对准的一套对准锥体314。其它实施例(未图示)使用例如不需要对准零件的经适当配置的晶片抬升机等移动部件。在特定实施例中,底座310具有一套用于垂直对准以及用于在晶片306翘曲时对其再成形或整平的最小接触面积(MCA)支撑件312。所描绘的装载锁配备有由不锈钢或任何其它合适的材料制成的中间支撑销308。所述装载锁还具有用于连接通气、冲洗以及抽真空线(未图示)的不同转接器。所述装载锁具有用于从低压和高压侧接近装载锁并将晶片306带入和带出的两个传送口315和316。可将一个传送口315指定为用于接近高压侧的外部传送口。可将另一传送口316指定为用于接近低压侧的内部传送口。
呈现了整体传送过程中的少数操作,以进一步说明根据特定实施例的装载锁的元件的配置和功能。当打开内部传送口316时,可将底座310放置于其降低的位置(如图3A中所示)中。可启动驱动器318来将底座带入降低的位置中。内部晶片传送系统的机器人臂随后将晶片306放置于中间支撑销308上,并从装载锁缩回。
冷却底座310随后被驱动器318升高。如图3B中所示,晶片306从中间支撑销308被抬升,且由MCA支撑件312支撑。在此操作期间,晶片306可通过对准锥体314中的一者或一者以上而在水平方向上对准。一旦晶片306在底座上受到支撑且内部传送口关闭,装载锁就立刻准备好通气。通常,使用用于整个处理系统的系统控制器来使本文所述的操作同步化。
图4A和图4B说明根据特定实施例的支撑晶片404的装载锁400在通气操作期间的俯视和侧横截面图。晶片404定位于冷却底座402上方,且通过对准锥体408而水平对准。晶片由MCA支撑件406支撑。图4A呈现其中底座具有十二个MCA支撑件的实施例。可使用任何合适数目的MCA支撑件406。一般来说,使用三个或三个以上MCA支撑件406。额外的MCA支撑件406可在晶片404的整平期间提供较好的支撑,然而每一额外的MCA支撑件提供与晶片404的后侧的一额外的接触点,且增加了破坏后侧的风险。在特定实施例中,MCA支撑件的数目可介于三与一百之间。在具体实施例中,MCA支撑件的数目可介于九与二十之间。在一个设计中,底座具有十五个支撑件,十二个支撑件在边缘附近,且三个支撑件较靠近中心。一些模型已指示需要至少约九个支撑件来满足正常垂度要求;可使用多达二十个支撑件来避免更严格的垂度要求。支撑件的间隔和数目通常取决于底座的热性质以及晶片的弹性性质和热性质。在特定实施例中,MCA支撑件具备均匀的径向和/或方位角(角度)间隔。
MCA支撑件406从冷却底座402延伸,并在底座402上方界定(用其尖端)一平面。在一个实施例中,所述尖端偏离所述平面小于约0.001英寸。在一较具体的实施例中,从所述平面的偏离约为0.0002英寸或更少,且在一甚至更具体的情况下,约为0.0005英寸或更少。MCA支撑件406可相对于彼此间隔开,以在冷却期间提供最少垂度的晶片404。
在一些实施例中,MCA支撑件406和/或对准锥体408是由任何导电材料制成的,其不仅提供对晶片的足够的支撑和对准,而且还提供从晶片404的后侧和边缘的静电的放电。在一具体实施例中,MCA支撑件406和/或对准锥体408是由导电陶瓷(例如体积电阻率介于103欧姆-厘米与1012欧姆-厘米之间的Cerastat)制成的。冷却底座402为MCA支撑件406和/或对准锥体408提供到电接地的电连接。
MCA支撑件尖端可具有各种形状。在一个实施例中,MCA支撑件406具有圆形尖端,所述圆形尖端提供与晶片的十分小的接触面积,进而减少破坏的风险并使局部的传热峰值最小化。晶片与MCA支撑件之间的直接接触导致与传热主要依赖于通气气体以及对冷却底座的接近的其它区域中相比,在接触点处的传热要高得多。减少每一MCA支撑件的接触面积和支撑件的数目将使局部的传热峰值最小化。在另一实施例中,MCA支撑件406经成形为具有平坦顶部的圆柱。
在特定实施例中,晶片冷却底座402的顶部表面(即,面对后侧的表面)是弯曲的。在一个实施例中,曲率半径介于约1,000英寸与10,000英寸之间。这些半径值可分别为300mm晶片提供为0.0174英寸与0.0017英寸的边缘与中心间隙之间的差。在一较具体的实施例中,曲率半径可介于约4,000英寸与8,000英寸之间,其对应于同一晶片大小的0.0044英寸与0.0022英寸的间隙差。中心间隙可能已预设为介于约0.001英寸与0.020英寸之间,或者更具体来说,预设为介于约0.002英寸与0.010英寸之间。下表呈现底座设计的各种实例(就中心间隙和曲率半径方面而表征)。
表1
图5A说明装载锁的盖子502和主体504的横截面图。在特定实施例中,盖子502具有用于允许通气气体进入装载锁的通气口508。所述口可与统称为通气路径的一个或一个以上通道连通。图5B中进一步说明此路径的一实例。通气口508允许通气气体流入第一通道512中,所述第一通道512可经成形为矩形的环形空间、环形或者各种其它合适的形状。如图5B中所示,所述环形的两侧由盖子502形成,且其它两侧由装载锁的主体504形成。在特定实施例中,所述侧介于约0.125英寸与1.000英寸之间。在一个实施例中,第一通道512大于通气路径的其它通道。这可能是通气气体在从入口管508进入到路径中之后在第一通道512内的初始分布所需要的。举例来说,第一通道512的尺寸可为约0.5英寸乘0.5英寸。第一通道512的开口可为约0.30英寸。然而,在许多情况下,有效地成倍增多气流或在晶片的顶部中心上方传递扩散流的任何设计将起作用。
通气气体随后通到第二通道514中。第二通道514也可具有矩形环的构型或任何其它合适的形状。第二通道514的宽度(H1)可介于约0.125英寸与1.000英寸之间,更具体来说,介于约0.250英寸与0.500英寸之间。第二通道的长度(即,第一通道与第三通道之间的距离)也可为介于约0.010英寸与0.125英寸之间,更具体来说,介于约0.015英寸与0.045英寸之间。
所述通气气体随后从第二通道前进,并进入到第三通道516中。第三通道516也可具有矩形或其它环形构型。其宽度(H2)可介于约0.010英寸与0.125英寸之间,更具体来说,介于约0.015英寸与0.045英寸之间。第一通道512的长度可介于约0.010英寸与0.125英寸之间,更具体来说,介于约0.015英寸与0.045英寸之间。应针对给定装载锁与晶片组合而仔细选择这些尺寸,以确保均匀的流量,且不产生太大的压差。第三通道516引导通气气体在晶片上方朝向腔室的中心。在此方向上引入气体防止了气体的喷射定向为直接朝向晶片,这消除由经由直接冲击而接合到晶片导致的一个缺陷模式。优选的是,通气气体仅由于装载锁内部流体动力学的缘故而朝向晶片流动。在离开第三通道之后,通气气体即刻被压差驱动到装载锁的不同区域。
回到图5A,在所描绘的实施例中,通气气体从第三通道进入所述装载锁。第三通道516的开口的直径(D)可介于约4英寸与10英寸之间,更具体来说,介于约6英寸与8英寸之间。上文所呈现的这些尺寸是用于经设计以传送300mm晶片的装载锁,且对于用于其它晶片大小(例如,200mm晶片)的装载锁可伸缩。直径(D)确定通气气体的处于晶片506的前侧506a和后侧506b之间的装载锁的腔室内的路径长度。举例来说,较小的直径对应于通气气体较靠近晶片的中心而引入,且因此,通过较长的路径行进到后侧,且导致较高的压差。所述压差还取决于通气气体必须传送通过的且由装载锁的各种内部元件所界定的横截面构型。此外,晶片的前侧与装载锁的表面(例如,盖子和主体)之间的距离可影响所述压差。在特定实施例中,所述距离为介于约1mm与50mm之间,更具体来说,介于约5mm与10mm之间。一般来说,此距离大于晶片的后侧与底座之间的间隙。一般来说,装载锁设计将在后侧上产生从晶片的中心到边缘的压力梯度,以及在顶侧上产生中心到边缘梯度。另外,从晶片的前侧到后侧将存在基本梯度。
在特定实施例中,底座510与后侧506b之间的较小间隙可导致过量的压差,因为通气气体较慢地穿过较小的间隙,从而导致在晶片与底座之间的压力增加较慢。晶片的前侧上的太多压力可能通过(例如)导致在晶片中产生过量的扭曲或高机械应力而破坏所述晶片。因此,特定实施例提供用以限制晶片前侧上的压力的机制或程序。在一个实例中,底座510可在其顶部表面上包含小沟槽,以促进将通气气体分布于底座与晶片的后侧506b之间。或者(或另外),可将通气气体中的一些通过冷却底座510而朝向晶片506的中心和其它部分供应。
在特定实施例中,压力梯度(在晶片的前侧与后侧之间)经设计成足够低,以防止在晶片支撑件之间晶片扭曲大于0.0002英寸。这将随衬底的弹性、支撑件之间的距离以及所产生的压力梯度而变。仅需要约0.001磅/平方英寸(psi)压差来整平由于压缩性的膜应力而扭曲的大多数圆顶晶片。在特定实施例中,压差类似于约0.0015磅/平方英寸或更大。在相同的或其它实施例中,压差少于约1磅/平方英寸。一般来说,压力上限和下限是由MCA支撑件间隔、MCA支撑件设计、晶片的弹性以及其它参数确定的。
图6是描绘根据特定实施例的用于从装载锁的低压侧到高压侧冷却和传送晶片的过程的流程图。所描绘的过程如框602处所示通过确保装载锁具有与将从其进行传送的一侧(例如,低压侧)相同的压力而开始。举例来说,如果上次传送是对这一侧进行的,那么装载锁可能已处于此压力。可通过打开真空口和/或装载锁与低压侧之间的口来平衡压力。一旦压力在内部传送口的两侧上约为相同,就可打开所述口(604)。有时在将另一晶片传送到低压侧之后,所述口可保持打开。控制系统随后确保冷却底座处于降低的位置中。这可通过(例如)将信号发送到底座驱动器以将冷却底座移动到降低的位置中来完成。内部传送系统的机器人臂随后将晶片载运到装载锁中(框606),并将其定位于中间支撑销上(框608)。
机器人臂随后从装载锁缩回(框610),且内部传送口关闭(框614),从而使装载锁从低压侧密封。传送口的关闭(框614)可发生于在机器人臂的缩回与将通气气体引入到装载锁中之间的任何时刻。底座升高(框612),且其用MCA支撑件从中间支撑销抬升晶片。所述晶片在此刻可能不与所有MCA支撑件接触。举例来说,所述晶片可具有扭曲的形状,且仅少数MCA支撑件与晶片的低压区域(low area)接触。所述压力在此刻贯穿整个装载锁为统一的。另外,所述晶片可通过对准锥体而相对于冷却底座对准。在一个实施例中,将晶片装载到装载锁中花费约1秒到5秒,且在此时间期间所述晶片可损耗约10℃到50℃。
一旦将晶片定位于MCA支撑件上,就起始通气循环(框616)。通过盖子中的通气口将一种或一种以上通气气体引入到装载锁中。流动速率可为恒定或可变的。在特定实施例中,使用可变的流动速率来克服通气循环期间的温度梯度的可变性,且进而提供统一的传热。平均流动速率取决于装载锁的内部体积(其可介于约1L与100L之间)和通气循环的持续时间。在使用内部体积为2升和10升的装载锁的一个实施例中,流动速率介于约10标准升每分钟(SLM)与50标准升每分钟之间。在一较具体实施例中,通气气体的流动速率可介于约20SLM与40SLM之间。
可使用各种通气气体。选择主要取决于成本和传热系数。当然,所述气体还应对晶片呈惰性。合适的通气气体的实例(取决于应用)包含氢气、氦气、氖气、甲烷、氮气、氧化碳、乙烷、乙烯、氩气、丁烯及其组合。在一具体实施例中,通气气体为氮气或主要为氮气的气体混合物。在另一具体实施例中,通气气体主要为氦气。传统上,氦气已由于其高传热系数而用作传热气体。不幸的是,氦气相对较昂贵。由于本发明允许十分靠近底座而安放晶片,所以人们可使用传热系数较低的相对较廉价的气体。氮气就是这样一种气体。
可使用通气气体的组合。此组合可具有恒定的或可变的成分。举例来说,通气循环可以仅使氦气流到装载锁中开始,而随后引入氮气。在此实例中,氦气的流动速率可逐渐减少,且氮气的流动速率可增加。在另一实施例中,可即刻关闭第一气体的流动,同时可在此刻引入另一气体。可能需要通气气体的特定总流动速率来维持装载锁中的晶片上的充足的压差。
在通气循环期间(框616),将装载锁从其初始低压带入到最终高压。在图7的情况中论述了装载锁内在传送过程期间的压力曲线的三个实例。在每一实例中,在装载锁中在通气期间压力连续增加。选择压力曲线以在晶片上维持压差。所述压差应具有充分的量级,以迫使晶片平坦地与所有MCA销相抵而安放。在替代实施例中,装载锁压力在通气期间保持恒定(或甚至减少)。然而,为了使晶片保持平坦地与MCA销相抵而销住,此类实施例一般需要通过底座的中心部分将一些通气气体抽气到装载锁之外,以便在晶片上产生压差。
至少在通气循环的一部分期间,产生充足的压差以用于晶片的整平。在特定实施例中,在晶片的中心周围的压差为至少约0.001磅/平方英寸,更具体来说,至少约0.002磅/平方英寸,且在一些情况下,至少约0.010磅/平方英寸。晶片的后侧可与所有MCA支撑件或其大部分接触。在一个实施例中,将充足的压差维持了整个通气操作(框616)持续时间的至少约70%。在一较具体实施例中,将所述充足的压差维持了整个通气操作持续时间的至少约90%。
在通气循环(框616)完成之后,装载锁的压力即刻与在高压侧上相同。装载锁的外部传送口打开,且可执行冲洗循环(框618)。冲洗循环涉及提供一种或一种以上惰性气体,例如氩气、氦气、氮气或任何其它气体,以至少在初始移动操作期间遮蔽晶片以防止氧化。可通过通气口或单独的冲洗口来供应惰性气体。在一个实施例中,此刻在晶片上并未维持压差。
如框620中所指示,随后下降底座,且将晶片保持在中间支撑销上。在晶片与底座之间产生增加的间隙允许外部晶片处置系统的机器人臂到达晶片之下、从销抬升晶片以及从装载锁移除晶片(操作622)。应注意,为了减少到底座表面的间隔且进而改进晶片与所述表面之间的传热的晶片的整平可用来用于晶片的加热。换句话说,可使用本发明的概念来加热或冷却晶片;有可能在加热或冷却循环期间升高压力。在特定实施例中,本发明适用于在恒定压力操作期间用足够的抽气来在晶片的后侧上施加力。
图7是根据一个实施例的装载锁内的压力随装载、通气以及冲洗阶段期间的时间而变的图表。在装载阶段702期间,通过打开的内部传送口将晶片引入到装载锁中。如上文所指示,装载锁内的压力在此阶段期间必须与低压侧上相同。在完成传送之后,关闭传送口,且装载锁开始通气阶段704。在此阶段期间引入一种或一种以上通气气体。所供应的通气气体连同抽气流动速率一起(在使用抽气的情况下)的整体流动速率确定装载锁内的压力曲线。
图7说明其中装载锁内的压力逐渐增加的压力曲线的三个实例。在一个实例中,如线708所说明,压力增加是恒定的。在不限于任何特定理论的情况下,认为恒定的压力增加(线708)实现更统一的传热和在晶片上相对较恒定的压差。
或者,如压力曲线710中所示,在通气阶段的开端压力可较快速地增加。这可快速增加传热系数,且同时提供更大的初始压差以供整平所述晶片。在另一实施例中,如曲线712中所示,压力在开端缓慢增加,且随后朝向通气阶段的末端而较快速增加。具体压力曲线的选择可基于晶片在传送期间的所要温度变化曲线、通气气体的导热性、通气阶段的持续时间、压差要求以及其它参数。
在通气阶段704完成之后,装载锁内的压力即刻约与外部高压相同。在此刻起始冲洗/卸载阶段706。可打开外部传送口,并将冲洗气体引入到装载锁中。此阶段的持续时间可介于约1秒与20秒之间。在一具体实施例中,冲洗/卸载阶段可持续3秒到10秒。
总结
尽管已出于理解的清晰性目的而在某一程度详细描述了前述发明,但应显而易见,可在所附权利要求书的范围内实践特定改变和修改。应注意,存在实施本发明的过程、系统以及设备的许多替代方式。因此,应将现有实施例认为是说明性而非限制性的,且本发明不应限于本文中给定的细节。
Claims (20)
1.一种冷却晶片和使用装载锁从低压环境向高压环境传送晶片的方法,所述方法包括:
(a)在保持出口传送口关闭的同时,将来自所述低压环境的所述晶片经由入口传送口提供至所述装载锁,所述晶片具有前侧和后侧;
(b)将所述晶片定位在提供于底座上的多个支撑件上以便所述晶片的所述后侧与所述多个支撑件中的至少一些相接触,其中所述底座具有从所述晶片吸收热的表面,所述多个支撑件的尖端在所述底座的用于从所述晶片上吸收热的表面上方界定一个平面;
(c)关闭所述入口传送口;
(d)经由位于所述晶片的所述前侧上方的通气气体口传递通气气体以增加所述装载锁内部的压力,其中,增加压力会在所述晶片的所述前侧与所述后侧之间产生改变所述晶片形状的压差,从而由于所述晶片形状的改变使得所述晶片的所述后侧与由所述多个支撑件的所述尖端界定的所述平面之间的平均距离减小;以及
(e)在保持所述入口传送口关闭的同时打开所述出口传送口,并通过所述出口传送口将所述晶片从所述装载锁移除至所述高压环境。
2.根据权利要求1所述的方法,其中所述通气气体不含氦气。
3.根据权利要求1所述的方法,其中以足以改变所述晶片形状的速率增加所述装载锁内部的压力。
4.根据权利要求3所述的方法,其中所述速率是至少30托每秒。
5.根据权利要求3所述的方法,其中所述速率是可变的。
6.根据权利要求5所述的方法,其中操作(d)开始时的速率大于操作(d)结束时的速率。
7.根据权利要求5所述的方法,其中所述可变的速率在操作(d)开始时所对应的压差大于在操作(d)结束时所对应的压差。
8.根据权利要求3所述的方法,其中以介于10标准升每分钟到50标准升每分钟的流动速率将所述通气气体传递到所述装载锁以维持所述速率,所述装载锁具有2升到10升的内部体积。
9.根据权利要求1所述的方法,其中在操作(d)期间,所述通气气体具有可变的成分。
10.根据权利要求1所述的方法,其中所述压差引起所述晶片的所述后侧与提供在所述底座上的所有支撑件相接触。
11.根据权利要求1所述的方法,其中所述压差引起所述晶片的所述后侧与提供在所述底座上的所述多个支撑件中的一个或多个额外支撑件相接触,当所述晶片被定位在所述多个支撑件上的时候,所述额外支撑件并不与所述晶片的所述后侧相接触。
12.根据权利要求1所述的方法,进一步包括,在操作(d)期间,经由所述底座的中心部分将所述通气气体抽气到所述装载锁之外,以在所述晶片的所述前侧和所述后侧之间产生额外的压差。
13.一种在将晶片从低压环境处理和传送到高压环境后冷却晶片的装载锁,所述装载锁包括:
(a)入口传送口,其用于在处理之后接收所述晶片;
(b)出口传送口,其用于在冷却之后移除所述晶片;
(c)底座,其具有从所述晶片吸收热的表面,所述表面被构造为在从所述晶片上吸收热的同时防止通气气体穿过所述底座;
(d)通气气体口,其用于将通气气体传递到所述底座的表面上方以增加所述装载锁内部的压力,所述通气气体口为环形,并包括面向所述环形中心的开口,所述开口被构造为在所述通气气体离开所述开口后将所述通气气体引导到所述晶片的前表面的上方并平行于所述晶片的前表面,其中所述环形的直径小于所述晶片的直径;以及
(e)至少三个支撑件,其提供在所述底座的表面上,其中所述支撑件的尖端界定出一个位于所述底座的表面上方的平面。
14.根据权利要求13所述的装载锁,其中由所述至少三个支撑件的所述尖端界定的平面与所述底座的表面之间的平均间隙不大于0.010英寸。
15.根据权利要求13所述的装载锁,其中对应于所述通气气体口的环形具有对于300毫米晶片的4英寸到10英寸的直径,其在所述通气气体离开所述开口后界定出所述晶片的前表面上方的所述通气气体的流动路径。
16.根据权利要求13所述的装载锁,进一步包括装载锁盖子和装载锁主体,所述装载锁盖子和所述装载锁主体之间的分界面至少形成所述通气气体口的开口。
17.根据权利要求13所述的装载锁,进一步包括耦合到所述通气气体口的通气气体源,其中所述通气气体不含氦气。
18.根据权利要求13所述的装载锁,其中所述底座的表面具有凸面形状。
19.根据权利要求13所述的装载锁,其中所述支撑件布置于所述底座上至少第一环形和第二环形内,且其中第一环形被定位在距所述底座的中心4英寸到6英寸的位置,且其中第二环形被定位在距所述底座的中心1英寸到3英寸的位置。
20.根据权利要求19所述的装载锁,其中将至少六个支撑件提供于第一环形内,且将至少三个支撑件提供于第二环形内。
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