CN102105620A - 具有支撑凸台的基座 - Google Patents

具有支撑凸台的基座 Download PDF

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CN102105620A
CN102105620A CN2008801226972A CN200880122697A CN102105620A CN 102105620 A CN102105620 A CN 102105620A CN 2008801226972 A CN2008801226972 A CN 2008801226972A CN 200880122697 A CN200880122697 A CN 200880122697A CN 102105620 A CN102105620 A CN 102105620A
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boss
wall
chemical vapor
support
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CN102105620B (zh
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J·A·皮特尼
M·哈曼诺
L·G·赫尔维格
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SunEdison Inc
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Abstract

一种用于在化学气相沉积工艺期间支撑半导体晶片的基座包括具有相反的上表面和下表面的体。支撑凸台从所述体的所述下表面向下延伸。每一个支撑凸台具有凸台开口，所述凸台开口的尺寸和形状适宜于容纳化学气相沉积设备的支撑杆，从而在所述支撑杆上安装所述基座。

Description

具有支撑凸台的基座
技术领域
本发明一般而言涉及用于在化学气相沉积工艺期间支撑半导体晶片的基座。
背景技术
可以对半导体晶片进行化学气相沉积工艺(例如，外延沉积工艺)以在晶片的前表面上生长硅的薄层。该工艺允许直接在高质量外延层上制造器件。在美国专利5,904,769和5,769,942中公开了常规外延沉积工艺，通过引用将其并入到这里。
在外延沉积之前，半导体晶片被装载到沉积室中并被往下放置到基座(susceptor)上。在晶片被往下设置在基座上之后，外延沉积工艺开始于向晶片的前表面(即，背离基座的表面)引入诸如氢气或者氢气与盐酸混合物的清洁气体，以预加热和清洁晶片的前表面。清洁气体从前表面去除自然氧化物，这允许外延硅层在沉积工艺的随后的步骤期间持续且均匀地在表面上生长。通过向晶片的前表面引入诸如硅烷或氯化的硅烷的气态硅源气体来继续外延沉积工艺，从而在前表面上沉积和生长硅外延层。与基座的前表面相反的背表面可以同时经受氢气。在外延沉积期间在沉积室中支撑半导体晶片的基座在该工艺期间旋转以确保外延层均匀地生长。在美国专利6,652,650、6,596,095以及6,444,027中描述了在外延生长工艺中使用的现有技术基座，通过引用将所有上述文件并入到这里。
常见的基座设计包括在基座的上面中具有凹陷的石墨盘以容纳(receive)晶片。该盘被涂覆有碳化硅。此外，三个相等间隔的跑道形开口从下表面延伸到基座中，用于容纳在沉积室内设置的支撑部的上端。这些支撑部开口与支撑部啮合，以防止在处理期间在支撑部旋转时基座从支撑部上滑脱。该基座在跑道形开口的位置处容易开裂。纠正该开裂问题的常规技术包括增大碳化物涂层的厚度、减小碳化物涂层的厚度、以及在凹陷的内部拐角处使用嵌条(fillet)。
申请人确定上述技术中的每一种仅能取得有限的成功。因此，存在对这样的基座的需求，该基座减小或消除了由于其与支持杆的啮合而造成的开裂。
发明内容
在本发明的一个方面中，一种用于在化学气相沉积工艺期间在包括多个支撑杆(support post)的化学气相沉积设备中支撑半导体晶片的基座，其一般包括具有相反的上表面和下表面的体。至少一个凹陷从所述体的所述上表面向下延伸，用于在所述化学气相沉积工艺期间在其中容纳单个半导体晶片。多个支撑凸台(support boss)从所述体的所述下表面向下延伸。每一个所述支撑凸台具有朝向所述基座的所述体的所述下表面轴向地延伸的凸台开口。所述凸台开口的尺寸和形状适宜于容纳所述化学气相沉积设备的所述支撑杆中的一个的自由端，从而在所述支撑杆上安装所述基座。
在下文中，其他目的和特征将部分地显而易见且被部分地指出。
附图说明
图1为在化学气相沉积工艺期间用于支撑半导体晶片的基座的顶视图；
图2为图1的基座的底视图；
图3A为图2中的基座的支撑凸台的细节；
图3B为沿图3A的线3B-3B截取的基座的局部截面图；
图3C为沿图3A的线3C-3C截取的基座的局部截面图；
图4为与半导体晶片组合的沿图1的线4-4截取的基座的截面图；以及
图5为在化学气相沉积室中支撑半导体晶片的图1的基座的示意性截面图。
在所有附图中，相应的参考标号指示相应的部分。
具体实施方式
现在参考附图，具体而言参考图1，基座大体上被表示为10。如下面所解释的和图4所示意性示例的，基座10在化学气相沉积工艺期间在合适的沉积室14(宽泛地，化学气相沉积设备)中支撑半导体晶片12。更具体地并参考图4，室14具有多个(例如，三个)支撑杆16，支撑杆16在所述室内向上延伸并在化学气相沉积工艺期间与基座10啮合(engage)。
参考图1和2，基座10包括具有假想中心轴22的盘形体(通常表示为20)。此外，体20包括上表面24和下表面26。通常表示为30的第一凹陷从上表面24向下延伸到体20中。第一凹陷30包括大体上为圆柱形的壁32和从壁32的下端向内延伸的面34。面34还从壁32朝体20的中心轴22向下倾斜。面34支撑晶片12(图4)。基座10还包括在面34内侧和下方的平坦表面38。
参考图1和2，在表面38处，三个相等间隔的孔42延伸穿过基座10。这些孔42容纳常规的起模顶杆(lift pin)(未示出)以将晶片12升高到基座10上方且在处理期间将晶片往下放置到基座上。因为这些孔42和起模顶杆在本领域中是公知的，因此没有对其进行进一步的详细描述。
虽然基座体20可以具有不背离本发明的范围的其他总尺寸，但在一个实施例中，基座体20具有约14.7英寸的总直径。此外，虽然基座体20可以由不背离本发明的范围的其他材料构成，但在一个实施例中，基座体由碳化硅涂覆的石墨构成。基座体20可具有从上表面14延伸到下表面16的多个孔，如美国专利6,652,650和6,444,027所示和所描述的。应该理解，基座体可以采用除上面所详述的配置之外的其他配置。例如，基座体20可以具有大的中心开口。不同于上述描述的基座体的其他配置同样在本发明的范围内。
参考图1和2，通常由44表示的三个相等间隔的支撑凸台从基座体20的下表面26向外延伸。参考图3A-3C和图4，详细示出了凸台44中的一个，下面的描述与该凸台有关，并且应该理解，每一个凸台的结构是相同的。凸台44包括具有内部周边表面48的壁46，内部周边表面48限定椭圆形(oblong)或跑道形开口50，该开口50轴向地(即，沿假想轴A1-图4)朝向基座体20的下表面26延伸。开口50可以具有不背离本发明的范围的其他形状。开口50的尺寸和形状适于容纳沉积室14的支撑杆16中的一个的自由端，如下面将描述的。
每一个凸台开口50具有大直径54(图3B)和小直径56(图3C)。在示例性的实施例中，并如图2所示，每一个开口50的大直径54与基座10的假想径向线R1同延(coextensive)。凸台开口50可以相对于基座10具有不同的取向而不背离本发明的范围。作为实例而不是限制，每一个凸台开口50的大直径54可以为约0.8cm(0.3in)且小直径56可以为约0.5cm(0.2in)。
参考图4，每一个凸台开口50还具有朝向基座体20的下表面26延伸到凸台44的下表面57的深度D1。作为实例而不是限制，每一个凸台开口50的深度D1可以为约0.15cm(0.06in)。此外，还预期每一个凸台44的下表面57可以大体上(generally)与基座体20的下表面26共面。
在示例性的实施例中，凸台44的壁46具有外部周边表面58，该表面58为椭圆形或大体上为跑道形并大体上与壁的内部周边表面48共心。壁46在内部周边表面48和外部周边表面58之间具有厚度T1，该厚度围绕着凸台开口50的轴A1是大体上均匀的。作为实例而不是限制，每一个凸台壁46的厚度T1可以为约0.15cm(0.06in)。应该理解，壁46的外部周边表面58可以为其他形状，并且壁的厚度可以是不均匀的。
虽然凸台44可以由不背离本发明的范围的其他材料构成，但在一个实施例中，凸台由碳化硅涂覆的石墨构成。凸台44可以与基座体20一体形成，例如，通过从单个石墨坯料加工凸台和基座体。应该理解，可以与基座体20分离地形成凸台44，随后将凸台44固定到基座体20。形成具有凸台44的基座10的其他方法同样在本发明的范围内。还可以预期在凸台44接合基座体的内部和外部拐角处形成嵌条以提高凸台的承载能力。
参考图5，可以使用上述基座10作为用于诸如外延沉积工艺的化学气相沉积工艺的设备(通常由60表示)的一部分。在示例的实施例中，设备60包括上述外延反应室14，该反应室14具有内部体积或空间64。上述基座体的尺寸和形状适于被容纳在该室14的内部空间64内且适于支撑半导体晶片12。通过将杆的端部插入到支撑凸台44中的开口50中，来将基座10附接到常规支撑杆16。如本领域的普通技术人员所公知的，支撑杆16在外延工艺期间使基座10旋转。反应室14还包含用于在外延沉积工艺期间加热晶片12的热源，例如，位于基座10的上方和下方的加热灯阵列68。上气体入口70和下气体入口72允许将气体引入到室14的内部空间64中。
在外延沉积工艺期间，在半导体晶片12的前表面上生长外延硅层。晶片12被引入到室14中并被放置在基座10的面34的中心上。首先该装置进行预加热或清洁步骤。将诸如氢气或者氢气与盐酸的混合物的清洁气体引入到约环境压力下的室14中，温度为约1000℃到约1250℃，流速为约五升每分钟到约100升每分钟。在经过足以从晶片12的前表面和背表面去除自然氧化物层且将反应室14中的温度稳定到约1000℃到约1250℃的温度的时长后，通过在晶片12的前表面上方的入口70以约一升每分钟到约十五升每分钟的流速引入诸如硅烷或氯化的硅烷的含硅源气体。该源气体流动持续足以在晶片12的前表面或上表面上生长约0.1微米到约200微米的厚度的外延硅层的时长。在引入源气体的同时，诸如氢气的吹扫气体(purge gas)流动通过在晶片12的背表面或下表面之下的入口72。选择吹扫气体的流速，以便吹扫气体接触半导体晶片12的背表面并将从背表面向外扩散的掺杂剂原子携带到排放出口74。
基座10的支撑凸台44取代了形成在基座的体中的常规支撑开口。因此，具有支撑凸台44的基座10不具有由于支撑凹陷的形成而导致的被减薄的位置。因此，排除了由于这些被减薄的位置而导致的基座的开裂。
当介绍本发明或其实施例的各方面的部件时，冠词“一”、“一个”、“该”和“所述”旨在表示存在一个或多个部件。术语“包括”、“包含”以及“具有”旨在为包容性的，并且表示可以存在除所列出的部件之外的其他部件。此外，“顶部”和“底部”、“前”和“后”“上方”和“下方”以及取向的这些和其他术语的变形的使用是为了方便起见，而不要求元件的任何特定取向。
可以对上述构造、方法以及产品做出各种改变而不背离本发明的范围，旨在将包含在上述说明中并由附图示出的所有事项理解为是示例性的而不是限制性的。此外，这里阐述的所有尺寸信息是示例性的而不旨在限制本发明的范围。

Claims (8)

1.一种基座，用于在化学气相沉积工艺期间在包括多个支撑杆的化学气相沉积设备中支撑半导体晶片，所述基座包括：
具有相反的上表面和下表面的体；
至少一个凹陷，其从所述体的所述上表面向下延伸，用于在所述化学气相沉积工艺期间在其中容纳单个半导体晶片；以及
多个支撑凸台，其从所述体的所述下表面向下延伸，每一个所述支撑凸台具有朝向所述基座的所述体的所述下表面轴向地延伸的凸台开口，其中所述凸台开口的尺寸和形状适于容纳所述化学气相沉积设备的所述支撑杆中的一个的自由端，从而在所述支撑杆上安装所述基座。
2.根据权利要求1的基座，其中每一个凸台开口大体上为椭圆形。
3.根据权利要求2的基座，其中每一个凸台开口大体上为具有大直径和小直径的跑道形。
4.根据权利要求3的基座，其中所述凸台开口的所述大直径基本上与所述基座的假想径向线共延。
5.根据权利要求3的基座，其中每一个凸台开口的所述大直径为约0.276in，并且每一个凸台开口的所述小直径为约0.215in。
6.根据权利要求2的基座，其中每一个支撑凸台包括壁，所述壁具有限定所述凸台开口的大体上为跑道形的内部表面和与所述内部表面大体上共心的大体上为跑道形的外部表面。
7.根据权利要求6的基座，其中每一个壁具有在所述壁的内部表面与外部表面之间延伸的厚度，并且其中每一个壁的厚度围绕所述开口的轴是大体上均匀的。
8.根据权利要求7的基座，其中每一个支撑凸台的所述壁的厚度为约0.61in。
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