CN101156255A - 纳米结构的块状热电材料 - Google Patents
纳米结构的块状热电材料 Download PDFInfo
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- CN101156255A CN101156255A CNA2005800465120A CN200580046512A CN101156255A CN 101156255 A CN101156255 A CN 101156255A CN A2005800465120 A CNA2005800465120 A CN A2005800465120A CN 200580046512 A CN200580046512 A CN 200580046512A CN 101156255 A CN101156255 A CN 101156255A
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- component
- thermoelectric material
- thermoelectric
- semiconductor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/02—Treatment of water, waste water, or sewage by heating
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
- C02F2103/02—Non-contaminated water, e.g. for industrial water supply
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
- Silicon Compounds (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
大概的温度范围 | n-型 | p-型 |
300K<T<500K | Bi2Te3-Bi2Se3 | Bi2Te3-Sb2Te3 |
500K<T<700K | 掺有Bi的PbTe-SnTe | PbTe-SnTe |
阳离子表面活性剂 | CH3(CH2)nN+(CH3)3Br- |
非离子表面活性剂 | CH3(CH2)n(OCH2CH2)nOH |
嵌段共聚物 | H(OCH2CH2)n(OCH2CH3CH)m(OCH2CH2)nOH |
阴离子表面活性剂 | CH3(CH2)nSO3 -Na+ |
Claims (29)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60/633,918 | 2004-12-07 | ||
US11/120,731 US7309830B2 (en) | 2005-05-03 | 2005-05-03 | Nanostructured bulk thermoelectric material |
US11/120,731 | 2005-05-03 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101688041A Division CN101656293B (zh) | 2004-12-07 | 2005-10-18 | 形成块状热电材料的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101156255A true CN101156255A (zh) | 2008-04-02 |
CN100550450C CN100550450C (zh) | 2009-10-14 |
Family
ID=36572848
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800465120A Expired - Fee Related CN100550450C (zh) | 2004-12-07 | 2005-10-18 | 热电材料及其形成方法和热电器件 |
CN2009101688041A Expired - Fee Related CN101656293B (zh) | 2004-12-07 | 2005-10-18 | 形成块状热电材料的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101688041A Expired - Fee Related CN101656293B (zh) | 2004-12-07 | 2005-10-18 | 形成块状热电材料的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7309830B2 (zh) |
EP (1) | EP1820224B1 (zh) |
JP (2) | JP5139073B2 (zh) |
CN (2) | CN100550450C (zh) |
WO (1) | WO2006062582A2 (zh) |
Cited By (12)
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CN102177091A (zh) * | 2008-10-10 | 2011-09-07 | 丰田自动车株式会社 | 纳米复合热电转换材料、包含其的热电转换元件和制备纳米复合热电转换材料的方法 |
CN102449790A (zh) * | 2009-04-02 | 2012-05-09 | 巴斯夫欧洲公司 | 涂覆有保护层的热电材料 |
CN102013453B (zh) * | 2009-09-04 | 2012-06-06 | 复旦大学 | 一种具有高热释电性能的反铁电薄膜制备方法 |
CN103339752A (zh) * | 2010-12-03 | 2013-10-02 | 阿尔法贝特能源公司 | 具有嵌入式纳米结构的低导热率基体及其方法 |
CN103403900A (zh) * | 2011-03-04 | 2013-11-20 | 独立行政法人产业技术综合研究所 | 热电转换材料和使用该材料的挠性热电转换元件 |
TWI472069B (zh) * | 2011-12-19 | 2015-02-01 | Ind Tech Res Inst | 熱電複合材料 |
US9219215B1 (en) | 2007-08-21 | 2015-12-22 | The Regents Of The University Of California | Nanostructures having high performance thermoelectric properties |
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CN110006536A (zh) * | 2017-12-11 | 2019-07-12 | 松下知识产权经营株式会社 | 红外线传感器及其辐射热测量计红外线受光部的冷却方法 |
CN113659064A (zh) * | 2020-05-12 | 2021-11-16 | 华为技术有限公司 | 热电器件及热电装置 |
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CN110006536A (zh) * | 2017-12-11 | 2019-07-12 | 松下知识产权经营株式会社 | 红外线传感器及其辐射热测量计红外线受光部的冷却方法 |
CN113659064A (zh) * | 2020-05-12 | 2021-11-16 | 华为技术有限公司 | 热电器件及热电装置 |
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CN101656293A (zh) | 2010-02-24 |
EP1820224B1 (en) | 2015-04-29 |
WO2006062582A3 (en) | 2007-03-01 |
JP2008523614A (ja) | 2008-07-03 |
JP2010278449A (ja) | 2010-12-09 |
JP5529653B2 (ja) | 2014-06-25 |
EP1820224A2 (en) | 2007-08-22 |
CN100550450C (zh) | 2009-10-14 |
WO2006062582A2 (en) | 2006-06-15 |
CN101656293B (zh) | 2012-01-11 |
US7309830B2 (en) | 2007-12-18 |
US20060118158A1 (en) | 2006-06-08 |
JP5139073B2 (ja) | 2013-02-06 |
EP1820224A4 (en) | 2012-10-31 |
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