TWI455356B - 具熱電結構之光電元件 - Google Patents

具熱電結構之光電元件 Download PDF

Info

Publication number
TWI455356B
TWI455356B TW099118367A TW99118367A TWI455356B TW I455356 B TWI455356 B TW I455356B TW 099118367 A TW099118367 A TW 099118367A TW 99118367 A TW99118367 A TW 99118367A TW I455356 B TWI455356 B TW I455356B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor layer
thermoelectric
type
photoelectric conversion
Prior art date
Application number
TW099118367A
Other languages
English (en)
Other versions
TW201145576A (en
Inventor
Ming Chi Hsu
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW099118367A priority Critical patent/TWI455356B/zh
Priority to US13/152,754 priority patent/US9136454B2/en
Publication of TW201145576A publication Critical patent/TW201145576A/zh
Application granted granted Critical
Publication of TWI455356B publication Critical patent/TWI455356B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Description

具熱電結構之光電元件
本發明係關於一種光電元件，更詳言之，係有關於一種具有熱電結構之光電元件。
光電元件包含許多種類，例如發光二極體(Light-emitting Diode；LED)、太陽能電池(Solar Cell)和光電二極體(Photo diode)等。以LED為例，LED係一種固態半導體元件，其至少包含一p-n接面(p-n junction)，此p-n接面係形成於p型與n型半導體層之間。當於p-n接面上施加一定程度之偏壓時，p型半導體層中之電洞與n型半導體層中之電子會結合而釋放出光，此光產生之區域一般又稱為發光區(light-emitting region)。
目前發光二極體普遍有電流擴散不佳之問題，就p型半導體層在上的發光二極體而言，發光層上形成有一p型半導體層，而p型半導體層上可設有一電極墊以導入電流。目前增進電流擴散的方式多為於p型半導體層上形成一例如以金屬氧化物或磷化鎵為材料之電流擴散層，再於電流擴散層上設置電極墊，而進一步地可再由電極墊延伸出一或複數之延伸電極以更增進電流的分佈。然而即使於發光二極體上進行了上述可增進電流分部之結構改良，仍有電流過度集中於電極墊或其延伸電極下方之問題。
此外，發光二極體另有散熱方面的問題。當發光層溫度過高時，電子與電洞的結合率會降低進而影響發光效率。上述發光二極體更可以進一步地與其他元件組合連接以形成一發光裝置(light-emitting apparatus)。所述發光裝置包含一具有至少一電路之次載體(sub-mount)；至少一焊料(solder)位於上述次載體上，藉由此焊料將上述發光二極體黏結固定於次載體上並使發光二極體之基板與次載體上之電路形成電連接；以及，一電性連接結構，以電性連接發光二極體之電極墊與次載體上之電路；其中，上述之次載體可以是導線架(lead frame)或大尺寸鑲嵌基底(mounting substrate)，以方便發光裝置之電路規劃並提高其散熱效果。
本發明提出一種具熱電結構之光電元件，具有較佳的電流分佈及散熱效果，其包含：一基板；一光電轉換疊層，形成於基板上，包含一形成於基板上之第一半導體層、形成於第一半導體層上之一光電轉換層、及形成於光電轉換層上之一第二半導體層；一電極結構，包含一形成於該第二半導體層上之金屬墊，或基板為導電基板時形成於導電基板與光電轉換疊層間之一金屬導電層；以及一熱電結構，形成於電極結構與第二半導體層間或金屬導電層與基板間。
依據本發明之又一實施例，更包含一形成於第二半導體層與電極結構間之透明導電層，熱電結構係形成於透明導電層及金屬墊間、透明導電層中、透明導電層及第二半導體層間，或透明導電層中對應金屬墊之位置，以 進行熱電轉換。
如第1圖所示，本發明之第一實施例顯示一光電元件100，包含：一基板102；一形成於基板102上之光電轉換疊層104；一形成於光電轉換疊層104上之導電結構106；以及形成於導電結構106中之一熱電結構101。光電轉換疊層104包含形成於基板102上之一第一半導體層107、形成於第一半導體層107上之一光電轉換層108、及形成於光電轉換層108上之一第二半導體層110，其中第一半導體層107可為一n型半導體層，第二半導體層110可為一p型半導體層，而光電轉換層108可供產生光線，此時本實施例之光電元件100為一發光元件；或光電轉換層108可供吸收光線而令光電元件100為一太陽能電池。導電結構106係形成於第二半導體層110上，可至少包含形成於第二半導體110上之一透明導電層112，且於透明導電層112上復可形成有一供導入外部電流之金屬墊114，而金屬墊114更可延伸出一或複數之延伸部114a。
熱電結構101可由一奈米級熱電材料所形成，其特性為可將熱能轉成電能，或通電後而吸收周遭環境熱能的材料，例如為Bi2 Te3 、CeAl2 、Y2 O3 、或SiGe。熱電結構101可藉由蒸鍍形成於透明導電層112與第二半導體層110間；及/或透明導電層112中；及/或透明導電層112與金屬墊114 或其延伸部114a間，其中當熱電結構101形成於透明導電層中時，可位於金屬墊114及/或其延伸部114a之正下方。當電流由金屬墊114進入光電元件100時，熱電結構101可將電流擴散不良處所蓄積的熱能進行熱轉電之效應，以增加電流的分佈。於一實施例中，熱電結構101可為摻雜為p型或n型之半導體材料，當熱電結構101受熱時，無論其為n型或p型均會產生熱轉電之效應，差別在於當熱電結構101摻雜為n型時，係產生由熱電結構101往光電轉換層108流動之電流；而當熱電結構101摻雜為p型時，會產生由熱電結構101往光電元件100頂部流動之電流。本實施例所採用之熱電結構101較佳地為n型，以在進行電流擴散的同時亦提供往光電轉換層108流動之電流。
上述透明導電層112可包含金屬氧化物諸如氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋅鋁(AZO)、氧化鋅錫(ZTO)、氧化鋅(ZnO)；或半導體化合物諸如砷鎵化鋁(AlGaAs)、磷化鎵(GaP)或其他類似之半導體化合物；或導電性良好之薄金屬層或薄金屬合金層，其結構可為單層或疊層結構。
基板102可為導電基板或絕緣基板。如第1圖所示，本實施例之光電元件100為一水平式之發光元件，具有一絕緣基板。光電轉換疊層104可於基板102上以例如為MOCVD方式磊晶成長完成，或先於其他成長基板(圖未示)上成長完成後再結合於基板102。
請參閱第2A圖，本發明之第二實施例顯示一光電元件200，包含：一基板202；一形成於基板202上之光電轉換疊層204；一形成於光電轉換疊層204及基板202間之反射層206；以及形成於反射層206及基板202間之一熱電結構201。本實施例係相似於第一實施例，基板202則為導電基板，而與反射層206形成一導電結構。光電轉換疊層204包含形成於反射層206上之一第一半導體層207、形成於第一半導體層207上之一光電轉換層208、及形成於光電轉換層208上之一第二半導體層210，其中第一半導體層207可為一p型半導體層，第二半導體層210可為一n型半導體層。可於反射層206及第一半導體207間形成一透明導電層212以增加電流擴散之效果。熱電結構201可為奈米級熱電材料，以膜狀形成於基板202與反射層206間或導電結構中之其他疊層間。熱電結構201之材料可包含Bi2 Te3 、CeAl2 、Y2 O3 、或SiGe。此外，基板202底部係具有一下電極205，而光電轉換疊層204上則具有一上電極203。
反射層206之相對兩側分別與光電轉換疊層204及基板202結合，於本實施例中，光電轉換疊層204係先於另一成長基板(圖未示)成長完成後將成長基板移除，再與反射層206結合，而反射層206係預先與基板202結合。反射層206可為具有高反射率之材料，例如銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鎳(Ni)、鉻(Cr)、鎘(Cd)、鈷(Co)、錳(Mn)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Tl)、砷(As)、 硒(Se)、碲(Te)、釙(Po)、銥(Ir)、錸(Re)、銠(Rh)、鋨(Os)、鎢(W)、鋰(Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、鍶(Sr)、鋇(Ba)、鋯(Zr)、鉬(Mo)、鑭(La)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫(Ni-Sn)、鎳-鈷(Ni-Co)或金合金(Au alloy)等，以反射來自於光電轉換層208之光線。
熱電結構201可為p型或n型，如第2B圖所示，當熱電結構201為n型且通過電流時，n型熱電結構201中電子往電流之反向移動，而熱電結構201形成了一吸熱端201a及一放熱端201b，因而驅使光電轉換層208中之熱能往熱電結構201方向傳遞而加速熱能之散逸。本實施例之熱電材料201係為n型，以配合電流方向，然而光電轉換疊層204之第一半導體層207亦可為n型半導體層，而第二半導體層210可為p型半導體層，此時所採用之熱電結構201應為p型以配合電流方向。
另外，熱電材料201亦可為同時具有p型與n型的態樣，如第2C圖所示，基板202與反射層206間係間隔設有複數p型熱電材料2011及n型熱電材料2012。
本發明所列舉之各實施例僅用以說明本發明，並非用以限制本發明之範圍。任何人對本發明所作之任何顯而易知之修飾或變更皆不脫離本發明之精神與範圍。
100,200‧‧‧光電元件
101,201‧‧‧熱電結構
201a‧‧‧吸熱端
201b‧‧‧放熱端
102,202‧‧‧基板
106‧‧‧導電結構
206‧‧‧反射層
107,207‧‧‧第一半導體層
108,208‧‧‧光電轉換層
110,210‧‧‧第二半導體層
112,212‧‧‧透明導電層
114‧‧‧金屬墊
114a‧‧‧延伸部
203‧‧‧上電極
205‧‧‧下電極
2011‧‧‧p型熱電材料
2012‧‧‧n型熱電材料
第1圖係本發明熱電式光電元件之第一實施例示意圖；第2A圖係本發明熱電式光電元件之第二實施例示意圖；第2B圖係本發明熱電式光電元件之第二實施例之一熱電 效應示意圖；以及第2C圖係本發明熱電式光電元件之第二實施例之又一熱電效應示意圖。
100．．．光電元件
101．．．熱電結構
102．．．基板
106．．．導電結構
107．．．第一半導體層
110．．．第二半導體層
108．．．光電轉換層
112．．．透明導電層
114．．．金屬墊
114a．．．延伸部

Claims (10)

  1. 一種光電元件，係包含：一光電轉換層；一半導體層，形成於該光電轉換層上；一電極結構，包括形成於該半導體層上之一金屬墊；以及一熱電結構，形成於該電極結構與該半導體層間。
  2. 如申請專利範圍第1項之光電元件，更包含一形成於該半導體層與該電極結構間之透明導電層。
  3. 如申請專利範圍第2項之光電元件，其中該熱電結構係形成於該透明導電層中，及/或該透明導電層及該半導體層間，及/或透明導電層及該金屬墊間，及/或該透明導電層中對應該金屬墊之位置。
  4. 如申請專利範圍第1項之光電元件，其中該半導體層之極性為p型，而該熱電結構之極性為n型。
  5. 如申請專利範圍第1項之光電元件，其中該熱電結構係為奈米級熱電材料，包含Bi2 Te3 、CeAl2 、Y2O3 或SiGe。
  6. 一種光電元件，包含：一導電基板；一光電轉換疊層，形成於該導電基板上，包含一形成於該導電基板上之第一半導體層、形成於該第一半導體層上之一光電轉換層、及形成於該光電轉換層上之一第二半導體層；一金屬導電層，形成於該第一半導體層及該導電基板間；以及一熱電結構，形成於該金屬導電層及該導電基板間。
  7. 如申請專利範圍第6項之光電元件，其中該第一半導體層之極性為p型，而該熱電結構為n型。
  8. 如申請專利範圍第6項之光電元件，其中該第一半導體層之極性為n型，而該熱電結構為p型。
  9. 如申請專利範圍第6項之光電元件，其中該熱電結構包括間隔形成於該導電基板及該金屬導電層間之複數p型熱電材料、及複數n型熱電材料。
  10. 如申請專利範圍第6項之光電元件，其中該金屬導電層係一反射層。
TW099118367A 2010-06-04 2010-06-04 具熱電結構之光電元件 TWI455356B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW099118367A TWI455356B (zh) 2010-06-04 2010-06-04 具熱電結構之光電元件
US13/152,754 US9136454B2 (en) 2010-06-04 2011-06-03 Photoelectrical element having a thermal-electrical structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099118367A TWI455356B (zh) 2010-06-04 2010-06-04 具熱電結構之光電元件

Publications (2)

Publication Number Publication Date
TW201145576A TW201145576A (en) 2011-12-16
TWI455356B true TWI455356B (zh) 2014-10-01

Family

ID=45063792

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099118367A TWI455356B (zh) 2010-06-04 2010-06-04 具熱電結構之光電元件

Country Status (2)

Country Link
US (1) US9136454B2 (zh)
TW (1) TWI455356B (zh)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050051791A1 (en) * 2003-09-10 2005-03-10 Tomohisa Gotoh Substrate of emitting device and emitting device using the same
US20090140635A1 (en) * 2005-04-15 2009-06-04 Seiko Epson Corporation Porous semiconductor layer formation material

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7309830B2 (en) 2005-05-03 2007-12-18 Toyota Motor Engineering & Manufacturing North America, Inc. Nanostructured bulk thermoelectric material
US20060151801A1 (en) 2005-01-11 2006-07-13 Doan Trung T Light emitting diode with thermo-electric cooler
TWI257722B (en) 2005-07-15 2006-07-01 Ind Tech Res Inst Package structure of light-emitting diode with electrothermal component
EP1959508A4 (en) * 2005-12-07 2010-08-04 Toyota Motor Co Ltd THERMOELECTRIC IMPLEMENTATION MATERIAL AND PROCESS FOR ITS MANUFACTURE

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050051791A1 (en) * 2003-09-10 2005-03-10 Tomohisa Gotoh Substrate of emitting device and emitting device using the same
US7391048B2 (en) * 2003-09-10 2008-06-24 Samsung Sdi Co., Ltd. Optical control portion with graded metal dopant to control refractive index
US20080265245A1 (en) * 2003-09-10 2008-10-30 Samsung Sdi Co., Ltd. Substrate of emitting device and emitting device using the same
US20090140635A1 (en) * 2005-04-15 2009-06-04 Seiko Epson Corporation Porous semiconductor layer formation material

Also Published As

Publication number Publication date
US20110297984A1 (en) 2011-12-08
US9136454B2 (en) 2015-09-15
TW201145576A (en) 2011-12-16

Similar Documents

Publication Publication Date Title
US6573537B1 (en) Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6514782B1 (en) Method of making a III-nitride light-emitting device with increased light generating capability
US7897988B2 (en) Electroluminescent device
TWI479698B (zh) 光電元件
TW201123539A (en) Light-emitting device and the manufacturing method thereof
US9985169B2 (en) Light-emitting device
US20170330986A1 (en) Intermetallic bonded multi-junction structures
US20140338737A1 (en) Solar cell
JP2010074182A (ja) 窒化物半導体発光素子
TWI455356B (zh) 具熱電結構之光電元件
TW201308672A (zh) 光電元件及其製造方法
CN102315379B (zh) 具有热电结构的光电元件
US20200295230A1 (en) Semiconductor device
TWI404233B (zh) 光電元件及其製造方法
TWI708403B (zh) 半導體發光元件、光傳輸裝置
TWI408838B (zh) 具靜電放電保護能力之光電半導體封裝結構
TWI478371B (zh) 發光元件
TWI430474B (zh) 發光元件
TWI669834B (zh) 光電元件及其製造方法
TWI524549B (zh) 光電元件及其製造方法
TWI625869B (zh) 光電元件及其製造方法
TWI604635B (zh) 光電元件及其製造方法
TWI721501B (zh) 光電元件及其製造方法
KR101118032B1 (ko) Ｌｅｄ 칩의 냉각구조
TW200935619A (en) Fabrication method for vertical conductive type LED having double coarse faces and its product