AU2008200456B2

AU2008200456B2 - Solid electric generator

Info

Publication number: AU2008200456B2
Application number: AU2008200456A
Authority: AU
Inventors: Marc Damon Paris
Original assignee: Individual
Current assignee: Individual
Priority date: 2008-01-31
Filing date: 2008-01-31
Publication date: 2013-05-16
Anticipated expiration: 2028-01-31
Also published as: AU2008200456A1

Abstract

Abstract. The invention describes a thermoelectric generator, having within its layered assembly a metallic element in contact with a semi-conductor element which in turn is in contact with carbon element. Said elements through their respective characteristics control the flow of thermal energy through said generator and as they do so give rise to electric current. Fig.1

Description

Description: [001] The invention is a generator that converts thermal energy directly into electrical current. Further described as a machine whose method of manufacture employs known techniques to produce a device consisting at its extremities of a layer of a metallic element 1. Said metallic layer 1 manufactured from the metallic element gold Au. [002] Said gold layer containing within its inner region a layer manufactured from the metalloid element silicon Si 3. Said silicon layer 3 is manufactured by sintering small particles of doped silicon together in a mould and identified as the semiconductor of said generator. [003] Positioned at the inner region of said semiconductor layer 3 and consistent with said semiconductors inner dimensions is a solid carbon cube 2, however not limited to this shape, being further identified as a combination of carbon and the element silver Ag 6. Said metal element silver 6 being further identified as minute particles of said element silver 6 dispersed throughout the mass of said carbon cube 2, at the time of manufacture of said carbon cube. [004] Said generator in its assembled form consists for the greater part as a solid cube, however not limited to this form comprising various metallic, metalloid, and non-metallic elements. [005] In addition to the aforementioned generator's components two electrodes 4,5 are permanently attached to said generator. One of said electrodes 5 is in contact with said gold element 1 and the second said electrode 4 is in contact with said carbon cube 2 so that said electrode 4 passes through the silicon layer 3 which serves to separate said gold layer 1 and said carbon cube 2. Said electrodes 4,5 will assume the characteristic negative and positive roll depending on electrical current flow through said generator. Said electrodes are manufactured from a metallic element such as silver Ag. Said electrodes attached to said generator complete the necessary electrical circuit which allows current to flow through said generator. [006] Said generator produces electrical current by the method hereafter described. Utilising the aforementioned assembly 1,2,3,4,5,6 said generator is placed in an environment where thermal energy is available and in direct contact with the outer regions of said generator. [007] Electrical current is generated in said generator by the introduction of holes into the semiconductor element of said generator through the process known as doping. Manufacture of said holes in said semiconductor element 3 allows for the movement of thermally generated electrons through the semiconductor layer 3 of said generator that constitute electrical current flow. [008] Within said generator said electrical current is conducted through said solid carbon cube 2, due to the silver particles 6 that are within said carbon cube's assembly which allow for greater conduction of electrons through carbon cube 2. [009] Said gold layer 1 of said generator is designed to attract thermal energy to said generator. [010] Said gold layer 1 through its contact with said semiconductor layer 3 creates a thermal couple and gives rise to an electric field, due to the contact of two different materials which are held at differing temperatures. Said differing temperatures are brought about by the gold layer 1 which holds thermal energy, and the semiconductor layer 3 and the carbon layer 2 which resist the conduction of said thermal energy. [011] Said electrical field provides the necessary environment for thermally generated negatively charged electrons to migrate toward the positively charged semiconductor layer 3, and then on to the carbon and silver particle centre cube 2. [012] In a typical semiconductor set-up, an electric field is established when a flat strip semiconductor material is sandwiched between two flat metal electrical contact layers. This electric field is a flat linear shape echoing the material's shape that established it. The semiconductor substrate usually has a direction bias for electron transfer. [013] In the invention disclosed, the electric field at the carbon charcoal (2) and semiconductor (3) (doped with Titanium) interface is a three dimensional cube shape, echoing the shape of the materials geometry that established it. [014] At the semiconductor (3) and gold metal (1) interface of the invention disclosed a second electric field is created due to the contact of two different materials. This second electric field is also a three dimensional cube shape. [015] These three dimensional electric fields; one surrounding the other, are magnetically connected to the semiconductor layer (3) that separate them. The semiconductor layer allows a connecting pathway for electron movement between these two fields. [016] These two electric fields act as a motive potential for electron movement. Electrons being magnetic entities are subject to magnetic coercion. [017] In the invention disclosed, the doped ceramic semiconductor layer (3) is formed into a three dimensional hollow cube and at the time of its manufacture has holes in its doped lattice aligned so that radiating pathways for electron hoping from its inner region to its exterior are established. These pathways radiate in a 360 degrees direction. This is achieved with magnetic coercion at the time of the manufacture of said ceramic semiconductor cube layer (3).

[0181 A potential exists for electrons to migrate from the inner region of the semiconductor layer (3) to the outer region of the semiconductor layer (3) by way of the magnetically active holes that have been created within the semiconductor layer (3) atomic lattice, that attract electrons. The radiating electron pathways in the semiconductor layer (3) are in effect closer together at the carbon (2) and semiconductor (3) interface than they are at the gold layer (1) and semiconductor (3) interface due to radiance geometry and this disparity acts as a motive potential. [019] In brief; it is the cube shaped three dimensionality of the semiconductor layer within the invention disclosed, concomitant with its two electric fields, that provide a motive potential and increase electron movement and output from said invention when compared to a flat strip semiconductor set-up. [020] The invention is further described in the following specification and drawings. Description of the drawings: [021] Fig. 1 shows a cross-section of the generator 1,2,3 displaying its layered assembly. [022] Fig. 2 shows a partial cross-section of the generator with electrode attachments 4,5 and part of the metallic cover 1.

Claims

1. A generator which is composed of a hollow cube formed completely of a positively charged semiconductor (3) with a coating of gold (1) on its entire outer surface. Inside the hollow semiconductor cube (3) is a cube of carbon charcoal (2) and minute silver particles (6).

2. The generator of claim 1 wherein the generators exterior electrically conductive layer is gold metal (1).

3. The generator of claim 2 wherein the gold exterior layer (1) is lined with a layer of electrically conductive semiconductor material (3).

4. The generator of claim 3 wherein the semiconductor layer (3) is filled with a thermo conductive carbon charcoal mass (2).

5. The generator of claim 1 wherein two solid silver electrodes (4) (5) are permanently attached to said generator, one of said electrodes (5) being attached to the gold outer layer (1) of said generator of claim 2, and the other electrode (4) being in contact with said carbon charcoal mass (2) of claim 4.

6. The generator as claimed in claim 4 wherein the carbon cube (2) of said claim is combined with silver particles (6) dispersed throughout said carbon cube (2) dimensions.

7. The generator as claimed in claim 3 wherein the semiconductor layer (3) is doped with a dopant.