CA2469912A1 - Organic field effect transistor with an organic dielectric - Google Patents

Organic field effect transistor with an organic dielectric Download PDF

Info

Publication number
CA2469912A1
CA2469912A1 CA002469912A CA2469912A CA2469912A1 CA 2469912 A1 CA2469912 A1 CA 2469912A1 CA 002469912 A CA002469912 A CA 002469912A CA 2469912 A CA2469912 A CA 2469912A CA 2469912 A1 CA2469912 A1 CA 2469912A1
Authority
CA
Canada
Prior art keywords
field effect
organic
effect device
insulating material
organic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002469912A
Other languages
English (en)
French (fr)
Inventor
Stephen William Leeming
Soad Mohialdin-Khaffaf
Simon Dominic Ogier
Janos Veres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27256358&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA2469912(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from GB0130321A external-priority patent/GB0130321D0/en
Priority claimed from GB0130451A external-priority patent/GB0130451D0/en
Priority claimed from GB0220504A external-priority patent/GB0220504D0/en
Application filed by Individual filed Critical Individual
Publication of CA2469912A1 publication Critical patent/CA2469912A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/008—Triarylamine dyes containing no other chromophores
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B69/00—Dyes not provided for by a single group of this subclass
    • C09B69/10—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds
    • C09B69/109—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds containing other specific dyes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/11—Homopolymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/12—Copolymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
    • C08G2261/3142—Condensed aromatic systems, e.g. perylene, anthracene or pyrene fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/316—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain bridged by heteroatoms, e.g. N, P, Si or B
    • C08G2261/3162—Arylamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
    • C08G2261/92—TFT applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electrodes Of Semiconductors (AREA)
CA002469912A 2001-12-19 2002-11-21 Organic field effect transistor with an organic dielectric Abandoned CA2469912A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GB0130321A GB0130321D0 (en) 2001-12-19 2001-12-19 Electronic devices
GB0130321.3 2001-12-19
GB0130451.8 2001-12-20
GB0130451A GB0130451D0 (en) 2001-12-20 2001-12-20 Electronic devices
GB0220504.5 2002-09-03
GB0220504A GB0220504D0 (en) 2002-09-03 2002-09-03 Electronic devices
PCT/GB2002/005248 WO2003052841A1 (en) 2001-12-19 2002-11-21 Organic field effect transistor with an organic dielectric

Publications (1)

Publication Number Publication Date
CA2469912A1 true CA2469912A1 (en) 2003-06-26

Family

ID=27256358

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002469912A Abandoned CA2469912A1 (en) 2001-12-19 2002-11-21 Organic field effect transistor with an organic dielectric

Country Status (9)

Country Link
US (1) US7029945B2 (OSRAM)
EP (3) EP2204861A1 (OSRAM)
JP (3) JP2005513788A (OSRAM)
KR (1) KR100949304B1 (OSRAM)
AT (1) ATE525757T1 (OSRAM)
AU (1) AU2002343058A1 (OSRAM)
CA (1) CA2469912A1 (OSRAM)
NO (1) NO20043049L (OSRAM)
WO (1) WO2003052841A1 (OSRAM)

Families Citing this family (176)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241528A (ja) * 2003-02-05 2004-08-26 Ricoh Co Ltd 有機半導体装置及びそれを有する表示素子
GB0303267D0 (en) * 2003-02-13 2003-03-19 Plastic Logic Ltd Non lineur capacitors
US6950299B2 (en) 2003-02-13 2005-09-27 Plastic Logic Limited Non-linear capacitors
JP4513745B2 (ja) * 2003-06-27 2010-07-28 Ｔｄｋ株式会社 電界効果トランジスタ
KR100995451B1 (ko) * 2003-07-03 2010-11-18 삼성전자주식회사 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터
JP4325479B2 (ja) * 2003-07-17 2009-09-02 セイコーエプソン株式会社 有機トランジスタの製造方法、アクティブマトリクス装置の製造方法、表示装置の製造方法および電子機器の製造方法
JP2005072569A (ja) * 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
GB0318817D0 (en) * 2003-08-11 2003-09-10 Univ Cambridge Tech Method of making a polymer device
DE10340608A1 (de) * 2003-08-29 2005-03-24 Infineon Technologies Ag Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht
JP2005079549A (ja) * 2003-09-03 2005-03-24 Victor Co Of Japan Ltd 有機薄膜トランジスタ
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
US8450723B2 (en) 2003-11-04 2013-05-28 Alcatel Lucent Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain
JP5089986B2 (ja) 2003-11-28 2012-12-05 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 有機半導体層およびその改善
JP2005175386A (ja) * 2003-12-15 2005-06-30 Asahi Kasei Corp 有機半導体素子
JP2005191437A (ja) * 2003-12-26 2005-07-14 Ricoh Co Ltd 半導体装置、その製造方法、および表示装置
GB0400997D0 (en) 2004-01-16 2004-02-18 Univ Cambridge Tech N-channel transistor
US7256436B2 (en) 2004-03-30 2007-08-14 Shin-Etsu Chemical Co., Ltd. Thin-film field-effect transistors and making method
JP4449549B2 (ja) * 2004-04-15 2010-04-14 日本電気株式会社 有橋環式炭化水素ラクトン構造を有する材料を用いた有機薄膜トランジスタとその製造方法
US7372070B2 (en) * 2004-05-12 2008-05-13 Matsushita Electric Industrial Co., Ltd. Organic field effect transistor and method of manufacturing the same
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
KR100635567B1 (ko) * 2004-06-29 2006-10-17 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
EP1648040B1 (en) * 2004-08-31 2016-06-01 Osaka University Thin-layer chemical transistors and their manufacture
GB2418062A (en) * 2004-09-03 2006-03-15 Seiko Epson Corp An organic Field-Effect Transistor with a charge transfer injection layer
US7528176B2 (en) * 2004-09-14 2009-05-05 Northwestern University Carbonyl-functionalized thiophene compounds and related device structures
JP4502382B2 (ja) * 2004-11-02 2010-07-14 キヤノン株式会社 有機トランジスタ
KR100669752B1 (ko) 2004-11-10 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치
KR101122231B1 (ko) * 2004-12-17 2012-03-19 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR101142998B1 (ko) 2004-12-20 2012-05-08 재단법인서울대학교산학협력재단 유기 절연막 및 유기 절연막을 포함하는 박막 트랜지스터표시판 및 그 제조 방법
WO2006086082A2 (en) 2004-12-23 2006-08-17 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
KR101086159B1 (ko) * 2005-01-07 2011-11-25 삼성전자주식회사 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터
US20080164465A1 (en) 2005-02-18 2008-07-10 Koninklijke Philips Electronics, N.V. Electronic Device
JP2006229053A (ja) * 2005-02-18 2006-08-31 Ricoh Co Ltd 有機半導体層を有する電界効果型有機薄膜トランジスタ
US7619242B2 (en) * 2005-02-25 2009-11-17 Xerox Corporation Celluloses and devices thereof
JP4450214B2 (ja) * 2005-03-11 2010-04-14 セイコーエプソン株式会社 有機薄膜トランジスタ、電子デバイスおよび電子機器
JP4951868B2 (ja) * 2005-03-18 2012-06-13 凸版印刷株式会社 薄膜トランジスタの製造方法
ES2450169T3 (es) * 2005-03-23 2014-03-24 Turkiye Sise Ve Cam Fabrikalari A.S. Transistores orgánicos de efecto de campo basados en imida/diimida y un método de producción de estos
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法
US20060214154A1 (en) * 2005-03-24 2006-09-28 Eastman Kodak Company Polymeric gate dielectrics for organic thin film transistors and methods of making the same
US20060231908A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation Multilayer gate dielectric
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
EP1986247A1 (en) 2005-05-12 2008-10-29 MERCK PATENT GmbH Polyacene and semiconductor Formulation
TW200703664A (en) * 2005-05-31 2007-01-16 Nat University Iwate Univ Inc Organic thin film transistor
CN101223439B (zh) 2005-07-19 2012-01-18 皇家飞利浦电子股份有限公司 流体分析仪
KR101209046B1 (ko) * 2005-07-27 2012-12-06 삼성디스플레이 주식회사 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
US7781757B2 (en) 2005-08-24 2010-08-24 Sanyo Electric Co., Ltd. Organic semiconductor material, organic semiconductor element and field effect transistor using the same
TWI261361B (en) * 2005-08-31 2006-09-01 Ind Tech Res Inst Organic thin-film transistor structure and method for fabricating the same is provided
US20080113520A1 (en) * 2005-09-07 2008-05-15 University Of Seoul Foundation Of Industry- Academic Cooperation Method of Forming Organic Layer on Semiconductor Substrate
US7569415B2 (en) 2005-09-30 2009-08-04 Alcatel-Lucent Usa Inc. Liquid phase fabrication of active devices including organic semiconductors
US20070075308A1 (en) * 2005-09-30 2007-04-05 Florian Dotz Active semiconductor devices
US7488834B2 (en) 2005-09-30 2009-02-10 Alcatel-Lucent Usa Inc. Organic semiconductors
CN100511751C (zh) * 2005-10-17 2009-07-08 中国科学院化学研究所 一种有机场效应晶体管及其制备方法
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
DE102005059608B4 (de) * 2005-12-12 2009-04-02 Polyic Gmbh & Co. Kg Organisches elektronisches Bauelement mit verbesserter Spannungsstabilität und Verfahren zur Herstellung dazu
KR101213871B1 (ko) * 2005-12-15 2012-12-18 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US7425723B2 (en) * 2005-12-21 2008-09-16 Xerox Corporation Organic thin-film transistors
US7514710B2 (en) * 2005-12-28 2009-04-07 3M Innovative Properties Company Bottom gate thin film transistors
DE102006055067B4 (de) 2005-12-29 2017-04-20 Lg Display Co., Ltd. Organische Dünnfilmtransistoren und Verfahren zu deren Herstellung
KR101225372B1 (ko) * 2005-12-29 2013-01-22 엘지디스플레이 주식회사 박막트랜지스터 및 그 제조방법과 그 박막트랜지스터를포함하는 평판 표시 장치
EP1974401A1 (en) 2006-01-21 2008-10-01 Merck Patent GmbH Electronic short channel device comprising an organic semiconductor formulation
EP1990838A4 (en) * 2006-02-27 2011-02-16 Murata Manufacturing Co FIELD EFFECT TRANSISTOR
TW200737520A (en) * 2006-03-17 2007-10-01 Univ Nat Chiao Tung Gate dielectric structure and an organic thin film transistor based thereon
CN101443928A (zh) 2006-05-12 2009-05-27 默克专利有限公司 茚并芴聚合物基有机半导体材料
JP2007311377A (ja) * 2006-05-16 2007-11-29 Sony Corp 薄膜トランジスタの製造方法および薄膜トランジスタならびに表示装置
JP5256583B2 (ja) * 2006-05-29 2013-08-07 大日本印刷株式会社 有機半導体素子、および、有機半導体素子の製造方法
JP2007318025A (ja) * 2006-05-29 2007-12-06 Dainippon Printing Co Ltd 有機半導体素子、および、有機半導体素子の製造方法
US7919825B2 (en) * 2006-06-02 2011-04-05 Air Products And Chemicals, Inc. Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers
WO2008002660A2 (en) * 2006-06-28 2008-01-03 Northwestern University Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof
US7528448B2 (en) 2006-07-17 2009-05-05 E.I. Du Pont De Nemours And Company Thin film transistor comprising novel conductor and dielectric compositions
US8308886B2 (en) 2006-07-17 2012-11-13 E I Du Pont De Nemours And Company Donor elements and processes for thermal transfer of nanoparticle layers
US8062824B2 (en) 2006-07-17 2011-11-22 E. I. Du Pont De Nemours And Company Thermally imageable dielectric layers, thermal transfer donors and receivers
US8471064B2 (en) 2006-07-21 2013-06-25 Merck Patent Gmbh Copolymers of indenofluorene and thiophene
WO2008105816A2 (en) * 2006-08-22 2008-09-04 Northwestern University Gate dielectric structures, organic semiconductors, thin film transistors and related methods
KR100794720B1 (ko) 2006-08-28 2008-01-21 경희대학교 산학협력단 유기 박막 트랜지스터 표시판 및 그 제조 방법
WO2008065927A1 (fr) * 2006-11-27 2008-06-05 Zeon Corporation Transistor à film fin organique, élément électronique composite organique, procédé de fabrication d'un tel transistor et d'un tel élément, écran d'affichage et mémoire
US7981989B2 (en) * 2006-11-28 2011-07-19 Polyera Corporation Photopolymer-based dielectric materials and methods of preparation and use thereof
EP1936712A1 (en) * 2006-12-23 2008-06-25 ETH Zürich Organic field-effect transistors with polymeric gate dielectric and method for making same
TWI323034B (en) * 2006-12-25 2010-04-01 Ind Tech Res Inst Electronic devices with hybrid high-k dielectric and fabrication methods thereof
JP5234533B2 (ja) * 2007-03-26 2013-07-10 国立大学法人九州大学 有機半導体素子およびその製造方法
JP5657379B2 (ja) * 2007-04-25 2015-01-21 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 電子装置の製造方法
GB0709093D0 (en) * 2007-05-11 2007-06-20 Plastic Logic Ltd Electronic device incorporating parylene within a dielectric bilayer
GB2450382B (en) * 2007-06-22 2009-09-09 Cambridge Display Tech Ltd Organic thin film transistors, organic light-emissive devices and organic light-emissive displays
WO2009013291A2 (en) * 2007-07-25 2009-01-29 Basf Se Field effect elements
FR2919521B1 (fr) * 2007-08-01 2012-03-09 Commissariat Energie Atomique Couche d'accroche sur des polymeres fluores
TWI345671B (en) * 2007-08-10 2011-07-21 Au Optronics Corp Thin film transistor, pixel structure and liquid crystal display panel
KR20090065254A (ko) * 2007-12-17 2009-06-22 한국전자통신연구원 광반응성 유기고분자 게이트 절연막 조성물 및 이를 이용한유기 박막 트랜지스터
US7994495B2 (en) * 2008-01-16 2011-08-09 Xerox Corporation Organic thin film transistors
JP2009224689A (ja) * 2008-03-18 2009-10-01 Sanyo Electric Co Ltd 有機トランジスタ及びその製造方法
PT103999B (pt) * 2008-03-20 2012-11-16 Univ Nova De Lisboa Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem
GB2458940B (en) 2008-04-03 2010-10-06 Cambridge Display Tech Ltd Organic thin film transistors
JP2011523201A (ja) * 2008-04-24 2011-08-04 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子装置
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
FR2934714B1 (fr) * 2008-07-31 2010-12-17 Commissariat Energie Atomique Transistor organique et procede de fabrication d'une couche dielectrique d'un tel transistor.
WO2010020329A1 (en) 2008-08-18 2010-02-25 Merck Patent Gmbh, Indacenodithiophene and indacenodiselenophene polymers and their use as organic semiconductors
JP2010062276A (ja) * 2008-09-03 2010-03-18 Brother Ind Ltd 酸化物薄膜トランジスタ、及びその製造方法
EP2459614B1 (en) 2008-09-19 2013-06-12 Merck Patent GmbH Polymers derived from benzobis(silolothiophene) and their use as organic semiconductors
WO2010031479A1 (en) 2008-09-19 2010-03-25 Merck Patent Gmbh Polymers derived from bis(thienocyclopenta)benzothiadiazole and their use as organic semiconductors
JP5449736B2 (ja) * 2008-10-09 2014-03-19 株式会社日立製作所 ボトムゲート型有機薄膜トランジスタ及びその製造方法
JP2010093093A (ja) * 2008-10-09 2010-04-22 Hitachi Ltd 半導体装置およびその製造方法
EP2350161B1 (en) 2008-10-31 2018-11-21 Basf Se Diketopyrrolopyrrole polymers for use in organic field effect transistors
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
JP2010163521A (ja) 2009-01-14 2010-07-29 Sumitomo Chemical Co Ltd 絶縁層用樹脂組成物
FR2945669B1 (fr) * 2009-05-14 2011-12-30 Commissariat Energie Atomique Transistor organique a effet de champ
US8853820B2 (en) 2009-05-25 2014-10-07 Basf Se Crosslinkable dielectrics and methods of preparation and use thereof
WO2010136353A1 (en) 2009-05-27 2010-12-02 Basf Se Diketopyrrolopyrrole polymers for use in organic semiconductor devices
CN102449023B (zh) 2009-05-27 2015-10-07 巴斯夫欧洲公司 多环联噻吩
JP5458669B2 (ja) * 2009-05-28 2014-04-02 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器
EP2277944A3 (en) * 2009-07-24 2012-01-04 Electronics and Telecommunications Research Institute Composition for organic dielectric and organic thin film transistor formed using the same
GB2474827A (en) * 2009-08-04 2011-05-04 Cambridge Display Tech Ltd Surface modification
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
TWI384616B (zh) * 2009-09-11 2013-02-01 Univ Nat Cheng Kung 具備有機多介電層之記憶體元件
US8164089B2 (en) 2009-10-08 2012-04-24 Xerox Corporation Electronic device
US20120256166A1 (en) * 2009-12-17 2012-10-11 Merck Patent Gesellschaft Mit Beschrankter Haftung Deposition of nanoparticles
US8212243B2 (en) * 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
JP2011187626A (ja) * 2010-03-08 2011-09-22 Sony Corp 薄膜トランジスタおよび電子機器
JP5605610B2 (ja) * 2010-04-23 2014-10-15 セイコーエプソン株式会社 有機トランジスタの製造方法
CN102892807A (zh) 2010-05-19 2013-01-23 巴斯夫欧洲公司 用于有机半导体器件的二酮基吡咯并吡咯聚合物
JP5659568B2 (ja) * 2010-06-11 2015-01-28 富士ゼロックス株式会社 電界効果型有機トランジスタ
TW201213345A (en) * 2010-06-17 2012-04-01 Sumitomo Chemical Co Optical-energy crosslinkable organic thin film transistor insulation layer material, overcoat insulation layer and organic thin film transistor
CN102959753B (zh) 2010-06-24 2017-10-31 巴斯夫欧洲公司 具有改进开/关电流比和可控阈移的有机场效应晶体管
KR20130044331A (ko) 2010-07-30 2013-05-02 바스프 에스이 인쇄 전자에서의 양친매성 단백질
WO2012017005A2 (en) 2010-08-05 2012-02-09 Basf Se Polymers based on benzodiones
GB201013820D0 (en) * 2010-08-18 2010-09-29 Cambridge Display Tech Ltd Low contact resistance organic thin film transistors
WO2012029700A1 (ja) * 2010-08-30 2012-03-08 住友化学株式会社 有機薄膜トランジスタ絶縁層用組成物及び有機薄膜トランジスタ
WO2012028278A1 (en) 2010-09-02 2012-03-08 Merck Patent Gmbh Interlayer for electronic devices
DE112011102917T5 (de) 2010-09-02 2013-09-05 Merck Patent Gmbh Gate-Isolatorschicht für elektronische Vorrichtungen
TWI462926B (zh) * 2010-09-07 2014-12-01 Nippon Kayaku Kk 有機半導體材料、有機半導體組成物、有機薄膜及場效電晶體以及其製造方法
CN103403903B (zh) * 2010-10-07 2017-02-15 乔治亚州技术研究公司 场效应晶体管及其制造方法
GB201105482D0 (en) 2011-03-31 2011-05-18 Imp Innovations Ltd Polymers
GB201108865D0 (en) 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Semiconductor compounds
GB201108864D0 (en) 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Transistors and methods of making them
ES2717633T3 (es) 2011-08-03 2019-06-24 Univ Degli Studi Cagliari Procedimiento de fabricación de transistor orgánico de baja tensión
FR2980041B1 (fr) * 2011-09-14 2016-02-05 Commissariat Energie Atomique Transistor a effet de champ comprenant un limiteur de courant de fuite
FR2980040B1 (fr) * 2011-09-14 2016-02-05 Commissariat Energie Atomique Transistor organique a effet de champ
KR102030860B1 (ko) 2011-10-04 2019-11-08 바스프 에스이 벤조디온 기재 중합체
KR20140101788A (ko) 2011-11-15 2014-08-20 바스프 에스이 유기 반도체 소자 및 이의 제조 방법
JP6157497B2 (ja) 2011-12-07 2017-07-05 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 有機電界効果トランジスタ
JP6029679B2 (ja) 2011-12-07 2016-11-24 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 有機半導体デバイスにおいて使用するためのジケトピロロピロールポリマー
PL397479A1 (pl) 2011-12-21 2013-06-24 Instytut Chemii Organicznej Polskiej Akademii Nauk Nowe, fluorescencyjne barwniki heterocykliczne i sposób ich otrzymywania
CN104185648A (zh) 2012-04-02 2014-12-03 巴斯夫欧洲公司 用于电子应用的菲并[9,10-b]呋喃聚合物及小分子
CN103367458B (zh) * 2012-04-03 2017-03-01 元太科技工业股份有限公司 薄膜晶体管及其制造方法
TWI500162B (zh) * 2012-04-03 2015-09-11 E Ink Holdings Inc 薄膜電晶體及其製造方法
US9293718B2 (en) 2012-04-04 2016-03-22 Basf Se Diketopyrrolopyrrole polymers and small molecules
CN104245783B (zh) 2012-04-25 2017-12-12 默克专利股份有限公司 用于有机电子器件的堤岸结构
WO2014008971A1 (en) 2012-07-13 2014-01-16 Merck Patent Gmbh Organic electronic device comprising an organic semiconductor formulation
WO2014016219A1 (en) 2012-07-23 2014-01-30 Basf Se Dithienobenzofuran polymers and small molecules for electronic application
EP2883254B1 (en) 2012-08-09 2018-10-24 Merck Patent GmbH Organic semiconducting device
TW201418350A (zh) * 2012-08-31 2014-05-16 Asahi Glass Co Ltd 硬化性組成物及硬化膜之製造方法
JP6036064B2 (ja) * 2012-09-13 2016-11-30 富士ゼロックス株式会社 有機半導体トランジスタ
KR102112890B1 (ko) 2012-09-21 2020-05-19 메르크 파텐트 게엠베하 유기 반도체 제제
WO2014053202A1 (en) 2012-10-04 2014-04-10 Merck Patent Gmbh Passivation layers for organic electronic devices
KR20150082473A (ko) 2012-11-07 2015-07-15 바스프 에스이 나프토디온 기재 중합체
WO2014086722A1 (en) 2012-12-04 2014-06-12 Basf Se Functionnalized benzodithiophene polymers for electronic application
CN105229812B (zh) 2013-05-06 2020-05-05 巴斯夫欧洲公司 在有机电子应用中作为电介质的可溶性含环酰亚胺聚合物
JP6191235B2 (ja) * 2013-05-20 2017-09-06 富士電機株式会社 有機トランジスタ及びその製造方法
KR102180253B1 (ko) 2013-06-24 2020-11-19 주식회사 클랩 융합된 디케토피롤로피롤을 기재로 하는 중합체
EP2818493A1 (en) 2013-06-25 2014-12-31 Basf Se Near infrared absorbing polymers for electronic applications
US9541829B2 (en) 2013-07-24 2017-01-10 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
JPWO2015076334A1 (ja) * 2013-11-21 2017-03-16 株式会社ニコン トランジスタの製造方法およびトランジスタ
US9336921B2 (en) 2013-12-17 2016-05-10 Dow Global Technologies Llc Electrically conducting composites, methods of manufacture thereof and articles comprising the same
US9330809B2 (en) 2013-12-17 2016-05-03 Dow Global Technologies Llc Electrically conducting composites, methods of manufacture thereof and articles comprising the same
KR20160118340A (ko) 2014-02-07 2016-10-11 올싸거널 인코포레이티드 교차-결합 가능한 플루오르화된 포토폴리머
GB2534600A (en) * 2015-01-29 2016-08-03 Cambridge Display Tech Ltd Organic thin film transistors
WO2017068009A1 (en) 2015-10-21 2017-04-27 Basf Se Polymers and compounds based on dipyrrolo[1,2-b:1',2'-g][2,6]naphthyridine-5,11-dione
CN105404046B (zh) * 2015-12-04 2018-06-01 深圳市华星光电技术有限公司 量子点彩膜基板的制作方法
DE102016104254A1 (de) * 2016-03-09 2017-10-26 Friedrich-Schiller-Universität Jena Verfahren zur Herstellung einer halbleitenden Folie und elektronisches Bauelement
EP3464415B1 (en) 2016-05-25 2020-08-19 Basf Se Semiconductors
TW201832012A (zh) * 2017-01-20 2018-09-01 日商富士軟片股份有限公司 保護層形成用組成物、積層體及套組
GB201810710D0 (en) * 2018-06-29 2018-08-15 Smartkem Ltd Sputter Protective Layer For Organic Electronic Devices
CN109088000B (zh) * 2018-08-22 2022-04-12 宁波石墨烯创新中心有限公司 一种有机薄膜晶体管及其制备方法
DE102019200810B4 (de) 2019-01-23 2023-12-07 Technische Universität Dresden Organischer dünnschicht-transistor und verfahren zur herstellung desselben
GB2600317B (en) * 2019-06-24 2024-02-14 Flexenable Tech Limited Modification of stress response and adhesion behavior of dielectric through tuning of mechanical properties
GB201919031D0 (en) 2019-12-20 2020-02-05 Smartkem Ltd Sputter protective layer for organic electronic devices
US12096641B2 (en) * 2020-06-03 2024-09-17 Purdue Research Foundation Polyimide-based transistor devices and methods of fabricating the same
CN113299831B (zh) * 2021-05-21 2023-03-24 西安电子科技大学 基于三层绝缘介质的低功耗柔性薄膜晶体管及其制作方法
CN113410385A (zh) * 2021-06-15 2021-09-17 南方科技大学 一种低压浮栅光电存储器及制备方法
CN116234326A (zh) * 2023-03-30 2023-06-06 南京邮电大学 一种基于氟化聚合物电介质的有机场效应晶体管制备方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565860A (en) 1984-04-09 1986-01-21 Nissan Motor Co., Ltd. Polymer of triphenylamine
DE3751502T2 (de) * 1986-03-11 1996-02-15 Kanegafuchi Chemical Ind Elektrische oder elektronische Anordnung mit einer dünnen Schicht aus Polyimid.
DE3610649A1 (de) 1986-03-29 1987-10-01 Basf Ag Polymere mit triphenylamineinheiten
JP2651691B2 (ja) * 1988-03-03 1997-09-10 バンドー化学株式会社 新規な芳香族アミン化合物
JP2533943B2 (ja) 1989-08-01 1996-09-11 キヤノン株式会社 電子写真感光体の製造法
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5556706A (en) 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
JPH07221367A (ja) 1994-01-31 1995-08-18 Matsushita Electric Ind Co Ltd 配向積層膜とその製造方法及びそれを用いた有機電子素子とその製造方法
GB9403503D0 (en) 1994-02-24 1994-04-13 Inmos Ltd Memory cell
JP2725591B2 (ja) * 1994-03-10 1998-03-11 日本電気株式会社 電界効果型トランジスタ
US5681664A (en) 1994-08-04 1997-10-28 Toyo Ink Manufacturing Co., Ltd. Hole-transporting material and use thereof
DE19638447B4 (de) 1995-09-19 2005-12-08 Ricoh Co., Ltd. Elektrophotographisches Aufzeichnungsmaterial
DE69625018T2 (de) 1995-09-25 2003-04-10 Toyo Ink Mfg Co Leuchtemittierender Stoff für organische Elektrolumineszensvorrichtung, und organische Elektrolumineszensvorrichtung mit diesem leuchtemittierendem dafür geeignetem Stoff
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
WO1997033193A2 (en) 1996-02-23 1997-09-12 The Dow Chemical Company Cross-linkable or chain extendable polyarylpolyamines and films thereof
DE19712233C2 (de) 1996-03-26 2003-12-11 Lg Philips Lcd Co Flüssigkristallanzeige und Herstellungsverfahren dafür
US5612228A (en) 1996-04-24 1997-03-18 Motorola Method of making CMOS with organic and inorganic semiconducting region
US6188452B1 (en) 1996-07-09 2001-02-13 Lg Electronics, Inc Active matrix liquid crystal display and method of manufacturing same
US5728801A (en) 1996-08-13 1998-03-17 The Dow Chemical Company Poly (arylamines) and films thereof
US5981970A (en) 1997-03-25 1999-11-09 International Business Machines Corporation Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
JPH10335671A (ja) * 1997-06-02 1998-12-18 Sharp Corp ドライバーモノリシック駆動素子
US5879821A (en) 1997-11-13 1999-03-09 Xerox Corporation Electroluminescent polymer compositions and processes thereof
GB9726810D0 (en) 1997-12-19 1998-02-18 Zeneca Ltd Compounds composition & use
WO2000078843A1 (en) 1997-12-19 2000-12-28 Avecia Limited Process for the isolation of polymer fractions
WO2000042668A1 (en) 1999-01-15 2000-07-20 The Dow Chemical Company Semiconducting polymer field effect transistor
US6207472B1 (en) 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
JP2000275678A (ja) * 1999-03-26 2000-10-06 Matsushita Electric Ind Co Ltd 薄膜半導体装置およびその製造方法
WO2000079617A1 (en) * 1999-06-21 2000-12-28 Cambridge University Technical Services Limited Aligned polymers for an organic tft
EP1727220A3 (en) * 1999-09-10 2008-07-16 Polymer Vision Limited Conductive structure based on poly-3,4-alkenedioxythiophene (PEDOT) and polystyrenesulfonic acid (PSS)
JP2001094107A (ja) * 1999-09-20 2001-04-06 Hitachi Ltd 有機半導体装置及び液晶表示装置
AU781584B2 (en) 1999-12-21 2005-06-02 Flexenable Limited Solution processed devices
GB0028867D0 (en) * 2000-11-28 2001-01-10 Avecia Ltd Field effect translators,methods for the manufacture thereof and materials therefor
JP2005505142A (ja) 2001-10-01 2005-02-17 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 電子デバイス及び構成並びに方法
DE10151036A1 (de) 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
CN1157807C (zh) 2001-11-09 2004-07-14 清华大学 一种有机薄膜场效应晶体管及其制备方法
US6912473B2 (en) * 2002-06-28 2005-06-28 International Business Machines Corporation Method for verifying cross-sections

Also Published As

Publication number Publication date
EP2204861A1 (en) 2010-07-07
EP1459392A1 (en) 2004-09-22
JP2011243986A (ja) 2011-12-01
WO2003052841A1 (en) 2003-06-26
KR100949304B1 (ko) 2010-03-23
ATE525757T1 (de) 2011-10-15
US20050104058A1 (en) 2005-05-19
AU2002343058A1 (en) 2003-06-30
US7029945B2 (en) 2006-04-18
JP2011254075A (ja) 2011-12-15
NO20043049L (no) 2004-07-15
KR20040063176A (ko) 2004-07-12
EP1459392B1 (en) 2011-09-21
JP5727293B2 (ja) 2015-06-03
EP2207217A1 (en) 2010-07-14
JP2005513788A (ja) 2005-05-12
JP5727294B2 (ja) 2015-06-03

Similar Documents

Publication Publication Date Title
EP1459392B1 (en) Organic field effect transistor with an organic dielectric
CA2427222C (en) Field effect transistors and materials and methods for their manufacture
CN104105726B (zh) 用于有机电子器件的平坦化层
CN1698217B (zh) 使用有机电介质的有机场效应晶体管
AU2002220818A1 (en) Field effect transistors and materials and methods for their manufacture
TWI644964B (zh) 有機半傳導性調配物
EP3108518A1 (en) Methoxyaryl surface modifier and organic electronic devices comprising such methoxyaryl surface modifier
CN102227813B (zh) 薄膜晶体管用栅极绝缘膜形成剂
WO2009016107A1 (en) Method for depositing a semiconducting layer from a liquid
CN109196676B (zh) 有机介电层及有机电子器件
Ngo Veres et a1.
GB2573203A (en) Composition comprising a dielectric compound and de-doping additive, and organic electronic devices comprising such composition

Legal Events

Date Code Title Description
FZDE Discontinued