WO2008139644A1 - 固体撮像装置とその製造方法および撮像装置 - Google Patents

固体撮像装置とその製造方法および撮像装置 Download PDF

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Publication number
WO2008139644A1
WO2008139644A1 PCT/JP2007/066116 JP2007066116W WO2008139644A1 WO 2008139644 A1 WO2008139644 A1 WO 2008139644A1 JP 2007066116 W JP2007066116 W JP 2007066116W WO 2008139644 A1 WO2008139644 A1 WO 2008139644A1
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Prior art keywords
imaging device
light reception
solid state
state imaging
film
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PCT/JP2007/066116
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English (en)
French (fr)
Inventor
Tetsuji Yamaguchi
Yuko Ohgishi
Takashi Ando
Harumi Ikeda
Original Assignee
Sony Corporation
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Filing date
Publication date
Application filed by Sony Corporation filed Critical Sony Corporation
Priority to CN2007800529013A priority Critical patent/CN101669205B/zh
Priority to US12/598,691 priority patent/US8410418B2/en
Priority to EP07792729.1A priority patent/EP2146376B1/en
Priority to KR1020147021003A priority patent/KR101558120B1/ko
Publication of WO2008139644A1 publication Critical patent/WO2008139644A1/ja
Priority to US13/792,654 priority patent/US9496306B2/en
Priority to US15/299,819 priority patent/US9954021B2/en

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    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

　十分なホール蓄積層の実現と暗電流の低減とを両立させることを可能とする。入射光を光電変換する受光部１２を有する固体撮像装置１において、前記受光部１２の受光面１２ｓに形成した界面準位を下げる膜２１と、前記界面準位を下げる膜２１上に形成した負の固定電荷を有する膜２２とを有し、前記受光部１２の受光面１２ｓ側にホール蓄積層２３が形成されることを特徴とする。
PCT/JP2007/066116 2007-05-07 2007-08-20 固体撮像装置とその製造方法および撮像装置 WO2008139644A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN2007800529013A CN101669205B (zh) 2007-05-07 2007-08-20 固态成像装置及其制造方法以及成像设备
US12/598,691 US8410418B2 (en) 2007-05-07 2007-08-20 Solid-state imaging device, method for manufacturing the same, and imaging apparatus
EP07792729.1A EP2146376B1 (en) 2007-05-07 2007-08-20 Solid state imaging device, its manufacturing method, and imaging device
KR1020147021003A KR101558120B1 (ko) 2007-05-07 2007-08-20 고체 촬상 장치와 그 제조 방법 및 촬상 장치
US13/792,654 US9496306B2 (en) 2007-05-07 2013-03-11 Solid-state imaging device, method for manufacturing the same, and imaging apparatus
US15/299,819 US9954021B2 (en) 2007-05-07 2016-10-21 Solid-state imaging device, method for manufacturing the same, and imaging apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007122370 2007-05-07
JP2007-122370 2007-05-07

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/598,691 A-371-Of-International US8410418B2 (en) 2007-05-07 2007-08-20 Solid-state imaging device, method for manufacturing the same, and imaging apparatus
US13/792,654 Division US9496306B2 (en) 2007-05-07 2013-03-11 Solid-state imaging device, method for manufacturing the same, and imaging apparatus

Publications (1)

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WO2008139644A1 true WO2008139644A1 (ja) 2008-11-20

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PCT/JP2007/066116 WO2008139644A1 (ja) 2007-05-07 2007-08-20 固体撮像装置とその製造方法および撮像装置

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US (14) US8410418B2 (ja)
EP (1) EP2146376B1 (ja)
JP (5) JP4803153B2 (ja)
KR (2) KR101558120B1 (ja)
CN (6) CN102280463A (ja)
TW (5) TWI426602B (ja)
WO (1) WO2008139644A1 (ja)

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