WO2006078585A2 - Wafer support pin assembly - Google Patents

Wafer support pin assembly Download PDF

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Publication number
WO2006078585A2
WO2006078585A2 PCT/US2006/001400 US2006001400W WO2006078585A2 WO 2006078585 A2 WO2006078585 A2 WO 2006078585A2 US 2006001400 W US2006001400 W US 2006001400W WO 2006078585 A2 WO2006078585 A2 WO 2006078585A2
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WO
WIPO (PCT)
Prior art keywords
substrate support
pin
support
pins
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2006/001400
Other languages
English (en)
French (fr)
Other versions
WO2006078585A3 (en
Inventor
Kyle Fondurulia
Carl White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM America Inc
Original Assignee
ASM America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM America Inc filed Critical ASM America Inc
Priority to CNA2006800024705A priority Critical patent/CN101495668A/zh
Priority to JP2007551440A priority patent/JP2008533697A/ja
Publication of WO2006078585A2 publication Critical patent/WO2006078585A2/en
Anticipated expiration legal-status Critical
Publication of WO2006078585A3 publication Critical patent/WO2006078585A3/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/45561—Gas plumbing upstream of the reaction chamber
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/45563—Gas nozzles
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Definitions

  • the field of the invention relates generally to semiconductor fabrication, and more particularly to a semiconductor substrate holder for processing semiconductor substrates.
  • Semiconductor processing steps typically employ various processing tools. Such processing tools include deposition devices, photolithography devices, polishing devices, etc. Most, if not all, of these devices use what is known as a substrate holding mechanism to hold a semiconductor substrate for processing.
  • Some substrate holders or supports have a plurality (preferably at least three) of support pins that extend axially upward from a top surface of the substrate holder.
  • the support pins can be stationary for use during processing or can be lift pins configured to lift or lower a semiconductor substrate from or onto the top surface of the substrate holder.
  • the top surfaces of the support pins are configured to contact a lower or bottom surface (backside) of the semiconductor substrate. Processing (e.g., deposition, polishing, etc.) is typically performed on the top or upper surface of the semiconductor substrate.
  • a typical susceptor in a single-wafer processing type device comprises a disk-shaped body formed of metal or ceramic having high heat conductivity, and may also have a built-in heating element, such as an electric heater, within the susceptor.
  • Certain areas of the backside of the substrate may be subject to particle contamination during and/or after one or more processing steps. Such contamination may lead to or cause defects in the substrate. Particles can also contaminate the processing environment within the reaction chamber, which can, in turn, contaminate a substrate being processed in the chamber.
  • Particles are sometimes generated when the substrate support is assembled.
  • substrate supports having support pins typically require hand tools (e.g., wrench) for assembly, which increase particle generation.
  • the materials used in support pin assembly can cause also galling of the pin and guide, which also increases particles.
  • Such a threaded design typically requires vacuum vent holes to releasing undesirable trapped gas in the threaded connection between the pin head and the body of the pin due to a rise in process pressure.
  • vent holes are potential particle and contamination traps.
  • pin heads made of metal are undesirable because the metal can release metallic contaminants, which are undesirable in semiconductor processing.
  • Some support pins are formed of titanium, which may require an alumina passivation layer over the titanium pins to protect titanium and to create a passive surface for substrate.
  • Substrate supports are used in deposition chambers, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) chambers.
  • ALD processes provide the benefit of a conformal deposition layer.
  • problems with ALD processes such as the need for sequential self-saturating pulses.
  • ALD processes it is important to separate reactants in time and space to avoid CVD-like reactions, which destroy the conformality benefits of ALD.
  • trapped gas from one pulse can leak or diffuse from its trap and react with another pulse, creating particles and non-uniformity from CVD-like reactions.
  • a substrate support for processing semiconductor substrates.
  • the substrate support has a plurality of openings extending from a top surface to a bottom surface.
  • the substrate support includes a plurality of support pins. Each of the plurality of support pins is slidably mounted in one of the plurality of openings.
  • Each of the plurality of support pins includes an upper pin and a lower pin. The upper pin is engaged with the lower pin by means of a bayonet mount.
  • a method for assembling a semiconductor substrate support having a plurality of support structures.
  • a susceptor having a plurality of bores extending therethrough from a top surface to a bottom surface is provided.
  • An upper pin is passed through each of the plurality of bores, and each of the upper pins is engaged to a lower pin below the upper pin by rotating one of the upper pin and the lower pin by less than about 360 degrees.
  • a process tool for processing semiconductor substrate comprises a susceptor, a lifting mechanism, and a heater.
  • the susceptor has a plurality of openings extending from a top surface to a bottom surface.
  • the susceptor comprises a plurality of support pins, wherein each of the plurality of support pins is slidably mounted in one of the plurality of openings, each of the plurality of support pins comprising an upper pin and a lower pin, wherein the upper pin is engaged with the lower pin by means of a quick- release mechanism.
  • the lifting mechanism is configured to raise or lower the susceptor.
  • the substrate support is mounted over the heater.
  • a wafer support pin configured for slidably mounting in an opening in a wafer support for semiconductor processing.
  • the support pin comprises an upper pin having an enlarged pin head and an upper pin shaft extending downwardly from the pin head.
  • a lower pin is configured to engage with the upper pin by means of a bayonet mount.
  • Figure IA is a perspective and partially cross-sectional view of an embodiment of a substrate support having a support pin.
  • Figure IB is an exploded, bottom perspective view of an embodiment of a substrate support having a support pin extending through a bore in the support.
  • Figure 1C is a cross-sectional side view of a support pin in a lowered position in a substrate support.
  • Figure ID is an exploded perspective view of the heater and the lifting mechanism of an embodiment.
  • Figure IE is a perspective view of the heater and the shaft extending downward from the center of the heater.
  • Figure 2 A is a side view of an upper pin portion of a support pin.
  • Figure 2B is a detailed view of the connector of the upper pin portion shown in Figure 2A.
  • Figure 2C is a side view of the upper pin portion shown in Figure 2A, rotated 90 degrees.
  • Figure 3 A is a perspective view of a lower pin portion of a support pin.
  • Figure 3B is a perspective view of the lower pin portion shown in Figure 3A, rotated 90 degrees.
  • Figure 3C is a side view of the lower pin portion shown in Figure 3A.
  • the present invention is embodied in the devices generally shown in the Figures. It will be appreciated that the apparatuses may vary as to configuration and as to details of the parts, and that the methods may vary as to the specific steps and sequence, without departing from the basic concepts as disclosed herein.
  • gas delivery is used, to keep reactants separate. The reactants in ALD are not mixed as in CVD reactions.
  • controls for delivering reactants are programmed for alternate and sequential pulses with removal or purge steps therebetween. Temperatures are typically maintained between 100°C and 500°C, depending upon the reactants, to ensure self-saturating adsorption and reactions, such that less than about one molecular monolayer is deposited per cycle.
  • a substrate support ⁇ e.g., a susceptor or a chuck
  • the substrate support 110 preferably has at least three support structures or pins 120 slidably mounted in support pin openings or bores 130 in the substrate support 110. It is generally desirable to minimize the number of support pins 120 to minimize the mechanical complexity of the substrate support 110.
  • the substrate support 110 has three support pins 120, each positioned 120 degrees apart in the radial direction around the substrate support 110 (see Figures ID and IE).
  • the support pins 120 may be positioned either near the center of the substrate support 110 or closer to the edge. In the illustrated embodiment shown in Figures ID and IE, the support pins 120 are positioned approximately midway between the center and the edge of the substrate support 110.
  • the support pins 120 define a planar support platform for the substrate to space the substrate above the substrate support 110.
  • the substrate support 110 is formed of titanium.
  • the substrate support 110 may be formed of stainless steel, aluminum, silicon, alumina (ceramic), nickel, nickel alloys ⁇ e.g., Inconel®, Hastelloy®), etc.
  • the substrate support 110 is mounted over a heater 135.
  • the heater 135 is connected to a shaft 180 ⁇ see Figures ID and IE) in the center of the substrate support 110.
  • the shaft 180 is driven up and down by a lead screw that is motor driven, which will be described in more detail below.
  • the openings 130 extend through both the substrate support 110 and the heater 135.
  • support pins 120 By using the support pins 120 to raise the substrate above the top surface of the substrate support 110 during loading and unloading, a robot or wafer handling arm does not contact the top surface of the substrate support 110, thereby minimizing the likelihood of damage to the substrate and the substrate support 110.
  • support pins 120 allow the use of transport forks and paddles to reach under the substrate loading or unloading the substrate.
  • the use of support pins 120 for substrate loading/unloading also prevents the problems of stick and slide, where the substrate could be difficult to pick up due to suction and where the substrate could slide on trapped gas during drop off.
  • an oblong connector 140 is positioned under the heater 135 and the support pins 120.
  • the oblong connector 140 is connected, preferably threaded, to a base 160, which is secured to the floor of the processing chamber.
  • the substrate support 110 is moved up and down by a lifting mechanism 170 (see Figure ID), such as, for example, a motor or an air cylinder, for electrically or pneumatically driving the substrate support 110 up and down, hi a preferred embodiment, the lifting mechanism 170 is driven by a lead screw connected to an electric motor.
  • a lifting mechanism 170 such as, for example, a motor or an air cylinder, for electrically or pneumatically driving the substrate support 110 up and down, hi a preferred embodiment, the lifting mechanism 170 is driven by a lead screw connected to an electric motor.
  • the lifting mechanism is driven by a pneumatic actuator.
  • the substrate support 110 has aligned support pin openings or bores 130 extending through the substrate support 110 from the top surface of the support 110 through to the bottom surface of the heater 135.
  • Each of the openings 130 preferably has a diameter of from about 6 mm to about 10 mm.
  • a support pin 120 is slidably mounted in each of the openings 130 and configured to raise and/or lower a substrate. As shown in Figure 1C, each of the support pins 120 is positioned to slide within an opening 130. When the substrate is loaded onto or unloaded from the substrate support 110, the slidably mounted support pins 120 rise through the openings 130 in the substrate support 110 and raise or lower the substrate, as will be described in more detail below.
  • Each support pin 120 preferably has a pin head 120A with a substantially cylindrical surface that, when lowered, is seated in a recess 130A in the upper part of the substrate support 110, as best seen in Figure 1C.
  • the pin head 120A preferably has a diameter larger than the diameter of the body 120B of the support pin 120.
  • the diameter of the body 120B of the support pin 120 is preferably slightly smaller than the diameter of the opening 130 such that the support pin 120 may slide within the opening 130 without causing abrasion that may result from contact with the inner walls of the opening 130.
  • the support pins 120 may be raised and/or lowered, relative to the substrate support 110, to raise and/or lower a substrate.
  • the support pins 120 have pin heads 120A that are slightly tapered (gradually lessening in width toward the pin shaft or body 120B).
  • the recess or opening 130A in the substrate support 110 into which the pin head 120A is withdrawn when "lowered” is also tapered.
  • the mating surface of the pin head 120A mates with the surface of the recess 130A to inhibit gas flow through the openings 130.
  • inhibition of gas flow through the openings minimizes the risk of backside contamination of the substrate.
  • the support pin heads 120 may be formed with a tapered surface that mates with a correspondingly shaped tapered surface of the recesses 130A in the lowered position, as shown in the illustrated embodiment.
  • the recesses 130A may be formed with a surface that mates with a cylindrical pin head 120A.
  • each support pin 120 includes an upper pin 122 and a lower pin 124, which engage, preferably by means of a bayonet mount.
  • the upper and lower pins 122, 124 preferably engage and lock together when the upper and lower pins 122, 124 are rotated with respect to one another by a technician, preferably by less than about 360 degrees and a spring force from a compressed spring mechanism 128, e.g., a compression spring, biases the upper and lower pins 122, 124 apart.
  • a compressed spring mechanism 128 e.g., a compression spring
  • Figure 2A is a side view of the upper pin 122 and Figure 2C is a side view of the upper pin shown in Figure 2A, rotated 90 degrees.
  • the upper pin 122 has a connector 125, which is configured to engage with a slot 127 and groove 129 in the lower pin 124 (see Figures 3A and 3B).
  • Figure 2B is a detailed view of the connector 125 in circle A in Figure 2A.
  • Figure 3 A and Figure 3B are perspective views of the lower pin 124, with Figure 3B being a perspective view rotated about 90 degrees from the perspective view of Figure 3 A.
  • Figure 3 C is a side view of the lower pin 124.
  • the upper pin 122 or the lower pin 124 is rotated preferably by about 90 degrees after the connector 125 is inserted into the slot 127 (by pushing the upper and lower pins 122, 124 and compressing the spring 128), the upper pin 122 is biased away from the lower pin 124. After rotation by about 90 degrees, the connector 125 is biased by the spring 128 to rest against the supper surface of a groove 129 on the lower pin 124.
  • the compression spring 128 keeps the upper pin 122 and lower pin 124 locked in place (see Figure 1C). In this rotated position, the upper pin 122 cannot become disengaged from the lower pin 124 unless it is pushed down against the resistance of the spring 128 out of the groove 129 and rotated back 90 degrees to release the spring 128.
  • the quick-release mechanism (bayonet mount) and spring 128 eliminate the need for a threaded interface between the upper and lower pins 122, 124, thereby minimizing undesirable particle generation and greatly simplifying installation and replacement.
  • the upper pin 122 preferably has an enlarged head 120A, as shown in Figures IA- 1C and 2 A and 2C, and is preferably formed of an amorphous polymer PBI (polybenzimidazole) material, such as Celazole ® , which is a trademark of PBI Performance Products, Inc. of Charlotte, NC, U.S.A. and commercially available from Quadrant Engineering Plastic Products of Reading, PA, U.S.A.
  • PBI polybenzimidazole
  • the PBI material is desirable because it has high temperature resistance.
  • An upper pin 122 formed of a PBI material provides a non-metallic pin head 120A, which prevents metal contamination from the pin head 120A on the backside of the substrate.
  • the PBI pin heads 120A also eliminate the need for an alumina passivation layer.
  • the lower pin 124 is also preferably formed of a PBI material.
  • Alternative non-metallic materials for the lower pin 124 include, but are not limited to, ceramics (e.g., alumina) and engineering plastics, such as Torlon, Semitron, Peek, Ultem, Vespel, and Ertalyte).
  • the lower pin can also be a metal such as titanium or stainless steel.
  • the lower pin 124 is configured to engage with the compression spring 128, as shown in Figures IB and 1C.
  • An attachment means 131 such as a set screw in the illustrated embodiment, is provided to secure the compression spring 128 in place in the lower pin 124 prior to installment.
  • the compression spring 128 fits into a center bore of the lower pin 124.
  • the support pins 120 are configured to rise above the top surface of the substrate support 110 and to be seated within the recesses 130A when the substrate support 110 is driven down and up, respectively, controlled by the lifting mechanism 170.
  • the lifting mechanism 170 such as, for example, a motor or an air cylinder, electrically or pneumatically drives the substrate support 110 up and down.
  • the lifting mechanism 170 is driven by a lead screw connected to an electric motor.
  • the lifting mechanism is driven by a pneumatic actuator.
  • the oblong connector 140 remains stationary relative to the chamber.
  • a jam nut 150 (for adjusting and tightening the connection between the oblong connector 140 and the base 160) is positioned between the oblong connector 140 and the base 160.
  • the lifting mechanism 170 drives the substrate support 110 up.
  • the spring 126 biases the support pins 120 (which remain stationary relative to the platform or connector 140) to be retracted or "lowered” into the recesses 130A of the substrate support 110.
  • the pin head 120A sits in the countersunk recesses 130A and cannot lower further with respect to the support 110, while sealing the bore 130 from reactant gases. With continued upward movement of the support 110 to seal the chamber, the pins 120 move with the support 110.
  • the substrate support 110 is driven downward by the lifting mechanism 170 shown in Figure ID. Initially the support pins 120 (biased in the retracted position by the spring 126) move downwardly with the substrate support 110 as the chamber is opened. Continued downward movement causes the bottom surface of each of the support pins 120 to contact the oblong connector 140. The contact of the support pin 120 with the oblong connector compresses the spring 126 surrounding the lower portion of the support pin 120, as shown in Figures lA-lC.
  • the spring 126 As the spring 126 is compressed while the substrate support 110 is driven downward by the lifting mechanism 170, the spring 126 attains a restoring force that will facilitate relative "lowering" of the pin 120 when the substrate support 110 is lifted next time. Accordingly, the combination of the spring 126 and the platform or "floor” for downward pin movement provided by the oblong connector 140 permits the pins to move relative to the substrate support 110 while the substrate support 110 moves up and down, without requiring the pins to be fixed relative to the platform formed by the connector 140, and also allowing the use of shorter pins 120. Fixture of the pins 120 would prevent lateral play of the pins 120 relative to the chamber and risk breakage of the pins in the case of any lateral movement of the substrate support 110 during loading and unloading. With the illustrated arrangement, the pins 120 will move laterally with any such small lateral movements of the substrate support 110.
  • Figure ID is an exploded perspective view of the heater 135 and the lifting mechanism 170.
  • Figure IE is a perspective view of the heater 135 and the shaft 180 extending downward from the center of the heater 135.
  • the heater 135 is mounted to the lifting mechanism 170.
  • the shaft 180 fits inside the bellows assembly 190 of the lifting mechanism 170 and mounts to the lifting mechanism 170 at the inside base of the bellows assembly 190.
  • the lifting mechanism 170 is preferably secured to the bottom floor of the processing chamber.
  • the bellows assembly 190 creates a seal at the bottom of the processing chamber.
  • the support pins 120 When the support pins 120 are lowered, the support pins 120 are withdrawn so that pin heads 120A of the support pins 120 are seated in the recesses 130A of the support pin openings 130 and the top surfaces of the support pins 120 are slightly recessed in (or in other embodiments, flush with) the top surface of the substrate support 110 on which the substrate is mounted so that the substrate rests on the substrate support 110.
  • Figure 1C illustrates a support pin 120 withdrawn into a recess 130A.
  • the support pin heads 120A seat snugly in the recesses 130A and form a seal so that reactant gases cannot flow into and through the openings or bores 130 where they could be trapped and contaminate the backside of the substrate, or diffuse out and mix with other reactants to contaminate the wafer with CVD-generated particles and non- uniformity.
  • Each support pin head 120A preferably mates with the surface of the corresponding recess 130A of the opening 130 so as to inhibit gas flow through the opening 130 in the substrate support 110 during processing of the substrate to prevent contamination of the substrate backside.
  • a flush top surface on the substrate support 110 provides a uniform substrate support surface (e.g., uniformly heated) for uniform processing of the substrate.
  • a uniform substrate support surface e.g., uniformly heated
  • the additional spring 126 pulls the pin head 120A against the lower surfaces of the recess 130A in the substrate support 110 to provide a seal when the support pin 120 is in the lowered position relative to the support 110.
  • the support pin head 120A design shown in Figure 1C and the corresponding countersunk recesses 130A also provide a stopping point for the support pins 120 when they are lowered so that they may be predictably lowered to the correct position in the substrate support 110, where the tops of the pin heads 120A are flush with the upper surface of the substrate support 110.
  • the support pins 120 when lowered, thus provide the substrate support 110 with a predictably flush upper surface that would heat a substrate uniformly, as discussed above.
  • the support pins 120 In a "raised position" the support pins 120 preferably space a substrate above the upper surface of the substrate support 110 in a range of about 0.100 to about 1.0 inch, and more preferably in a range of about 0.2 to about 0.8 inch, and even more preferably at a height of about 0.60 inch (15 mm) from the top surface of the substrate support 110.
  • the substrate support 110 is heated by, for example, a resistive heater 135 below the substrate support 110.
  • the substrate holder 110 can be radiantly heated by radiant heaters mounted outside the reaction chamber, hi such radiantly heated embodiments, a plurality of radiant heat lamps is preferably arranged around the outside of the reaction chamber for heating the substrate and catalyzing the chemical deposition on the substrate, hi some embodiments, an upper bank of elongated heat lamps may be arranged outside of an upper wall of the reaction chamber and a lower bank of heat lamps may be arranged cross- wise to the upper bank of lamps, hi other embodiments, a concentrated array of heat lamps may be directed upward from underneath the substrate support 110.
  • Such lamp arrangements are employed in CVD chambers commercially available from ASM America, hie. of Phoenix, AZ under the trade name EPSILON®.
  • the substrate support 110 is capable of rotation for rotating the substrate during processing of the substrate.
  • the rotation of the substrate support 110 is preferably actuated by a rotary drive attached to a rotating shaft extending from the substrate support 110 and heater 135.
  • rotation of the substrate during processing can help to ensure uniformity of heating and distribution of reactant gases, thereby increasing the uniformity of the processed substrate.
  • a technician assembles the substrate support 110 and support pin 120 device by inserting the upper pin 122 into the lower pin and rotating after placing the substrate support 110 into the chamber.

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  • General Chemical & Material Sciences (AREA)
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PCT/US2006/001400 2005-01-18 2006-01-17 Wafer support pin assembly Ceased WO2006078585A2 (en)

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TW200636900A (en) 2006-10-16
CN101495668A (zh) 2009-07-29
JP2008533697A (ja) 2008-08-21
KR20070091332A (ko) 2007-09-10
US20060156981A1 (en) 2006-07-20
WO2006078585A3 (en) 2009-04-16

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