WO2005111266A1 - 気相成長装置用サセプタ - Google Patents

気相成長装置用サセプタ Download PDF

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Publication number
WO2005111266A1
WO2005111266A1 PCT/JP2005/008979 JP2005008979W WO2005111266A1 WO 2005111266 A1 WO2005111266 A1 WO 2005111266A1 JP 2005008979 W JP2005008979 W JP 2005008979W WO 2005111266 A1 WO2005111266 A1 WO 2005111266A1
Authority
WO
WIPO (PCT)
Prior art keywords
susceptor
fluid passage
wafer
vapor phase
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2005/008979
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Takashi Fujikawa
Masayuki Ishibashi
Takayuki Dohi
Seiji Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Sumitomo Mitsubishi Silicon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp, Sumitomo Mitsubishi Silicon Corp filed Critical Sumco Corp
Priority to KR1020067025104A priority Critical patent/KR100889437B1/ko
Priority to CN200580023240A priority patent/CN100594261C/zh
Priority to US11/569,139 priority patent/US20080110401A1/en
Priority to EP05741152.2A priority patent/EP1749900B1/en
Priority to JP2006513609A priority patent/JPWO2005111266A1/ja
Publication of WO2005111266A1 publication Critical patent/WO2005111266A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to a susceptor used in a vapor phase growth apparatus for growing an epitaxial film on the surface of a silicon wafer (hereinafter simply referred to as a wafer) provided for a semiconductor device, and particularly to an autodoping apparatus.
  • the present invention relates to a susceptor for a vapor phase epitaxy apparatus, which can suppress an increase in dopant concentration in an outer peripheral portion of an epitaxial film due to the above.
  • a vapor phase growth apparatus for growing an epitaxial film having a high quality film on a wafer surface a single wafer type vapor phase growth apparatus is often used.
  • a wafer is placed on a disk-shaped susceptor in which a graphite base material is coated with silicon carbide SiC in a passage-shaped chamber made of quartz, and placed on the outer surface of the chamber. While heating the wafer with the heater, it reacts with various raw material gases passing through the inside of the chamber to grow an epitaxial film on the wafer surface.
  • a recess called a wafer pocket having a depth slightly larger than the wafer and having a depth of about lmm is formed on the surface of the susceptor that receives the wafer.
  • a source gas for the vapor phase growth reaction a monosilane gas or a hydrogen-diluted chlorinated silane-based gas added with a dopant source gas of diborane (P-type) or phosphine or arsine (N-type) is used.
  • H is used for monosilane gas as a by-product along with silicon epitaxy by thermal CVD reaction on the wafer surface, and H is for chlorosilane gas.
  • the dopant concentration in the epitaxial layer is a force that increases at the outer periphery of the wafer. Can be seen.
  • This kind of phenomenon is a force called autodoping.
  • the cause is that the dopant species in the wafer is released in the Si-H-based atmosphere or Si-H-Cl-based atmosphere on the backside of the wafer, and the dopant species is directed toward the front surface. It is thought that the gas flows around the wafer surface by vigorous gas diffusion and locally increases the dopant concentration in the gas phase. As a result, a region where the dopant concentration of the epitaxial layer becomes uncontrollable occurs, which causes a decrease in the yield rate.
  • Patent Document 1 a susceptor having a through-hole formed at the outermost periphery of an e-pocket
  • Patent Document 1 Japanese Patent Application Laid-Open No. 10-223545
  • a susceptor for a vapor phase growth apparatus for achieving the above object is a susceptor in which an ⁇ ⁇ ⁇ ⁇ pocket is formed for receiving ⁇ during vapor phase growth.
  • a fluid passage having a shape in which radiant heat of a heating source power during vapor phase growth is not directly applied to the back surface of the wafer is formed between the front surface and the back surface or side surface of the wafer pocket.
  • the dopant species released from the wafer back surface wrap around the wafer surface.
  • the fluid passage force is discharged without any change.
  • the dopant concentration and the resistivity of the epitaxial layer can be made uniform without forming an oxide film for preventing autodoping on the back surface of the wafer.
  • the fluid passage according to the present invention has a shape in which radiant heat, which is a heating source during vapor phase growth, is not directly applied to the back surface of the wafer, so that temperature unevenness on the surface of the wafer is suppressed, As a result, growth unevenness on the epitaxial layer and the back surface of the wafer can be suppressed.
  • the wafer pocket is In the case of a structure having at least a first pocket portion on which the outer peripheral edge portion is placed and a second pocket portion formed with a smaller diameter and a lower side than the first pocket portion, the fluid passage is provided at one end of the second pocket portion.
  • the opening may be formed on the vertical wall surface of the pocket portion, and the other end may be opened on the back surface or side surface of the susceptor.
  • the e-pocket When the e-pocket is configured with a multi-stage pocket structure, a vertical wall surface is inevitably formed in the pocket portion, but since the vertical wall surface is substantially perpendicular to the back surface of the wafer, the heating source Radiant heat from the wafer is prevented from being directly applied to the back surface of the wafer.
  • the other end of the fluid passage may be opened on the back surface of the susceptor, or may be opened on the side surface of the susceptor.
  • the first pocket portion according to the present invention has a shelf portion on which the outer peripheral edge of the wafer is placed, and a vertical wall surface on which the shelf portion force also continues to the outside.
  • the second pocket portion according to the present invention is a vertical wall surface which is formed on the lower side of the susceptor with a smaller diameter than the first pocket portion and is continuous with the shelf of the first pocket portion, and a horizontal surface which is continuous with the vertical wall surface. (The horizontal plane itself need not be continuous and horizontal.)
  • the second pocket portion according to the present invention includes a third pocket portion, a fourth pocket portion, etc., in addition to the N-th pocket portion other than the first pocket portion, that is, the physically second pocket portion. It is a concept that includes. That is, all of the plurality of pockets formed smaller in diameter than the first pocket and below the susceptor are included.
  • the susceptor cartridge according to the present invention has a first structure having a first pocket portion on which an outer peripheral edge thereof is placed, and a fluid passage formed by a gap between the first structure and the first structure. 1
  • a structure having at least the second structure provided below the structure one end of the fluid passage is opened to the second vertical wall surface below the first pocket portion, and the other end is opened.
  • the susceptor can be configured to open on the back surface or side surface.
  • the fluid passage according to the present invention is not limited to a mode in which a hole is formed in the susceptor structure.
  • the susceptor itself is configured by combining a plurality of structures.
  • a gap may be formed in the mating surface of the two structures, and this may be used as a fluid passage. Even in the case of employing such a structure, it is formed between the first structure and the second structure in order to prevent the radiant heat of the heating source from being directly applied to the back surface of the wafer.
  • the gap that is, one end of the fluid passage is opened in a vertical wall surface located below the first pocket portion.
  • the other end of the fluid passage may be opened on the back surface of the susceptor, or may be opened on the side surface of the susceptor.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a vapor phase growth apparatus to which a susceptor according to the present invention is applied.
  • FIG. 2 is a half plan view and a half sectional view showing an embodiment of a susceptor according to the present invention.
  • FIG. 3 is a half sectional view showing another embodiment of the susceptor according to the present invention.
  • FIG. 4 is a half plan view and a half sectional view showing still another embodiment of the susceptor according to the present invention.
  • FIG. 5 is a half sectional view showing still another embodiment of the susceptor according to the present invention.
  • FIG. 6 is a graph showing resistivity distributions of an example of the present invention and a comparative example.
  • FIG. 1 is a schematic cross-sectional view showing a single-wafer-type vapor phase growth apparatus 1, which has an epitaxy film forming chamber 2 in which an upper dome 3 and a lower dome 4 are mounted on a dome mounting body 5.
  • the upper dome 3 and the lower dome 4 are made of transparent material such as quartz. The wafer w will be heated.
  • the susceptor 10 has its lower surface fitted and supported by a support arm 8 connected to the rotating shaft 7, and is rotated by driving the rotating shaft 7.
  • the material of the susceptor 10 is not particularly limited.
  • a material in which a surface of a carbon substrate is coated with a SiC film is preferably employed, and the shape thereof will be described later.
  • the method of loading the wafer W into the susceptor 10 and the method of unloading the wafer A and the wafer W from the susceptor 10 are not particularly limited, and include a type in which the wafer is transferred by raising and lowering a transfer jig using a Bernui chuck. Any of the types in which the lower surface of the wafer is supported by pins and transferred by lifting and lowering the pins can be applied.
  • a first gas supply port 11 and a second gas supply port 12 are provided on the side surface of the dome mount 5, and the first gas discharge port 13 and the second gas supply port 12 are provided on the side of the dome mount 5 opposed thereto. 2 Gas outlet 14 is provided. From the first gas supply port 11, a Si source such as SiHCl is diluted with hydrogen gas and
  • a reaction gas which is obtained by mixing a small amount of a dopant therein, is supplied into the formation chamber 2, and the supplied reaction gas passes through the surface of the wafer W, grows an epitaxial film, and then flows through the first gas outlet 13 to the apparatus. 1 is discharged outside.
  • a carrier gas such as hydrogen gas is supplied from the second gas supply port 12 toward the lower surface of the susceptor 10, and the apparatus is supplied through a second gas discharge port 14 provided downstream of the carrier gas. 1 is discharged outside. As a result, the dopant released from the wafer back surface can be more effectively discharged out of the apparatus 1.
  • it is not essential to supply a carrier gas such as hydrogen gas into the forming chamber 2 because the second gas supply port 12 and the second gas supply port 12 are required. Can also be omitted according to.
  • a second gas supply port 12 is provided to supply a carrier gas such as hydrogen gas into the formation chamber 2
  • a reaction gas for epitaxy growth is discharged without providing the second gas discharge port 14.
  • the first gas outlet 13 may also be used.
  • an e-pocket 101 formed of a concave portion having a diameter that is slightly larger than the outer diameter of the e-aerator W is formed on the upper surface of the susceptor 10 of the present embodiment.
  • the wafer pocket 101 has a first pocket portion 102 that supports the wafer W by surface contact, line contact or point contact only with the outer peripheral edge W1 of the wafer W, and a smaller diameter than the first pocket portion 102. It is composed of a second pocket portion 103 formed below the susceptor 10, and the wafer W is provided between the back surface of the wafer and the floor surface 103 b of the second pocket portion 103 at the center of the first pocket portion 102.
  • the first pocket portion 102 includes a first vertical wall surface 102a corresponding to a vertical wall surface of the concave portion, and a shelf portion 102b that contacts and supports the outer peripheral edge W1 of the wafer W, and the second pocket portion 103 has a concave portion.
  • a second vertical wall surface 103a corresponding to the vertical wall surface and a floor surface 103b corresponding to the horizontal surface of the concave portion also have a force.
  • the shelf 102b of the first pocket portion may have a tapered shape that is inclined downward from the outer peripheral side toward the inner peripheral side as shown in the drawing to support the outer peripheral edge W1 of the wafer W by line contact.
  • irregularities may be provided on the surface of the shelf 102b to support the outer peripheral edge W1 of the wafer W by point contact.
  • the susceptor 10 of the present embodiment has one end 105a opened in the second vertical wall surface 103a of the second pocket portion as shown in the cross-sectional view of FIG.
  • a fluid passage 105 is formed in the back surface 104.
  • the fluid passage 105 is formed by a plurality of holes formed in the circumferential direction of the susceptor 10 as shown in the plan view of FIG. .
  • the dopant diffused from the wafer back surface W2 by heating during vapor phase growth or the dopant released from the back surface W2 by vapor phase etching circulates the wafer surface W3 side. This is also for discharging the lower surface force of the susceptor 10 without causing it to enter.
  • the fluid passage 105 of this example has a shape in which the radiant heat H from the halogen lamp 6b provided below the apparatus 1 is not directly radiated to the wafer back surface W2 via the fluid passage 105. It has been. This prevents the radiant heat H emitted from the halogen lamp 6b from directly irradiating the wafer back surface W2 through the fluid passage 105, so that the wafer W facing the portion where the fluid passage 105 is provided can be prevented. A temperature difference between the temperature of the wafer and the temperature of the wafer W corresponding to the portion where the wafer is not provided is prevented, and the occurrence of uneven growth on the epitaxial layer and the back surface of the wafer can be prevented.
  • the fluid passage 105 has a shape in which radiant heat H from the halogen lamp 6b provided below the apparatus 1 is not directly applied to the wafer back surface W2 via the fluid passage 105. Is not limited to a specific shape! Figures 3 (A) to 3 (H) show typical modifications.
  • the fluid passage 105 shown in FIG. 1A is configured such that one end 105a opens to the second vertical wall surface 103a of the second pocket portion and the other end 105b opens to the side surface 106 of the susceptor 10. According to the fluid passage 105 of this example, it is possible to further prevent the radiant heat from the halogen lamp 6b from being directly applied to the wafer back surface W2 as compared with the example shown in FIG.
  • the fluid passage 105 shown in FIG. 2B has one end 105 a opened to the second vertical wall surface 103 a of the second pocket portion, and the other end 105 b formed on the back surface 104 of the susceptor 10.
  • the fluid passage 105 shown in FIG. 3 (C) has one end 105a opened to the second vertical wall surface 103a of the second pocket portion, and the other end 105b formed on the back surface 104 of the susceptor 10 and the second pocket portion. It is configured to open outside the second vertical wall surface 103a, and further has a bent portion in the middle of the fluid passage 105, which is the same as the example shown in FIG.
  • the inner diameter of the fluid passage 105 on the other end 105b side is larger than that of the fluid passage 105.
  • the fluid passage 105 in the example shown in FIG. 3D has one end 105 a opened to the second vertical wall surface 103 a of the second pocket portion, and the other end 105 b formed on the back surface 104 of the susceptor 10. It is common to the examples shown in FIGS. 9B and 9C in that the pocket portion is opened outside the second vertical wall surface 103a, but differs in that the fluid passage 105 is formed in a straight line.
  • the fluid passages 105 are formed vertically so that the openings at one end 105a are arranged above and below the second vertical wall surface 103a. is there.
  • the fluid passage 105 in the example shown in Fig. 5 (F) has one end 105a opened to the second vertical wall surface 103a of the second pocket portion and the other end 105b formed on the back surface 104 of the susceptor 10, and (B) and (C) are common to the examples shown in FIGS. (B) and (C) in that they open outside the second vertical wall surface 103a of the pocket, and (D) in that the fluid passage 105 is formed in a straight line Common to the example shown in The point that the concave portion 103c is formed on the outer periphery of the floor surface 103b of the pocket portion 103 and the floor surface 103b of the second pocket portion 103 are formed shallower than the above-described embodiments of FIGS.
  • One end 105a of the fluid passage 105 is open to the second vertical wall surface 103a corresponding to the concave portion 103c.
  • the concave portion 103c of the second pocket portion 103 may be formed continuously over the entire outer circumference or may be formed intermittently.
  • the fluid passage 105 of the present embodiment is also shaped so that the radiant heat H from the halogen lamp 6b provided below the apparatus 1 is not directly radiated to the back surface W2 of the wafer via the fluid passage 105.
  • the fluid passage 105 in the example shown in FIG. 10G is similar to the example shown in FIG. 10F in that a concave portion 103c is formed on the outer periphery of the second pocket portion 103. 103c is configured only with an inclined surface that is inclined outward and downward. One end 105a of the fluid passage 105 is open to the second vertical wall surface 103a corresponding to the concave portion 103c that also has the inclined surface force.
  • the concave portion 103c of the second pocket portion 103 may be formed continuously over the entire outer circumference, or may be formed intermittently.
  • the fluid passage 105 of the present embodiment also has a shape in which the radiant heat H from the halogen lamp 6b provided below the apparatus 1 is not directly applied to the wafer back surface W2 via the fluid passage 105.
  • FIG. 11H is the same as the example shown in FIG. 10F in that a concave portion 103c is formed on the outer periphery of the second pocket portion 103.
  • a concave portion 103c is formed on the outer periphery of the second pocket portion 103.
  • the difference is that in addition to the second vertical wall surface 103a of the pocket portion 103, a third vertical wall surface 103d opposed thereto is provided.
  • the floor surface 103b of the second pocket portion 103 is formed to be shallow as in the embodiments of FIGS. (F) and (G).
  • one end 105a of the fluid passage 105 opens to the third vertical wall surface 103d of the concave portion 103c, and the other end 105b is the back surface 104 of the susceptor 10 and opens inside the second vertical wall surface 103a of the second pocket portion.
  • the fluid passage 105 is formed linearly.
  • the concave portion 103c of the second pocket portion 103 may be formed continuously over the entire outer periphery or may be formed intermittently.
  • the fluid passage 105 of this example is also provided by the halogen lamp 6 provided below the apparatus 1. The shape is such that the radiant heat H from b is not directly radiated to the wafer back surface W2 through the fluid passage 105.
  • FIG. 4 is a half plan view and a half sectional view showing still another embodiment of the susceptor according to the present invention.
  • the susceptor 10 itself is constituted by combining two structural bodies 10a and 10b.
  • a gap is formed in the mating surface of the two structures 10a and 10b, and this is used as a fluid passage 105.
  • the susceptor 10 of the present example is configured by placing the first structure 10a on the second structure 10b, and the first and second structures 10a , 10b are formed with a fluid passage 105 as a gap.
  • the outer periphery of the upper surface of the second structure 10b is spaced, for example, by 120 degrees as shown by a dotted line in FIG.
  • Three projections 107 are formed at equal positions.
  • the outer periphery of the back surface of the first structure 10a receives the protrusion 107 at a regular position corresponding to the protrusion 107 (the positional relationship between the first structure 10a and the second structure 10b is a regular position).
  • Recess 108 is formed. If the first structure 10a is only supported by the second structure 10b, the object can be achieved by providing the projections 107 in at least three places without providing the concave portions 108.
  • the concave portion 108 By providing the concave portion 108 at a regular position corresponding to 107, it also functions as a positioning function when the first structure 10a and the second structure 10b are aligned.
  • the protrusion 107 corresponds to the support means according to the present invention, and the protrusion 107 and the recess 108 correspond to the positioning means according to the present invention.
  • the susceptor 10 When the susceptor 10 is configured by combining the two structures 10a and 10b in this manner, the entire circumference of the joint surface of the structures 10a and 10b becomes the fluid passage 105.
  • the dopant released from the back surface W2 can be more efficiently exhausted from the fluid passages 105 formed around the entire surface of the wafer without being wrapped around the wafer surface W3. Further, since the first structure 10a and the second structure 10b are simply joined together without forming a hole serving as the fluid passage 105, the fluid passage 105 formed of a gap is formed. Good.
  • FIG. 4 In the susceptor 10 of the type shown in FIG. 4, when the first structure 10a and the second structure 10b are combined, a gap that forms the fluid passage 105 is formed on the mating surface, and the fluid that is the gap is formed.
  • the passage 105 is provided with the radiant heat from the halogen lamp 6b provided below the apparatus 1.
  • the shape is not limited to a specific shape as long as the shape does not directly irradiate the wafer back surface W2 through the body passage 105.
  • FIGS. 5A to 5C show representative examples of the modified examples.
  • the fluid passage 105 formed on the mating surface of the first structure 10a and the second structure 10b has a bent shape as shown in FIG. 3 (B).
  • the protrusion 107 is provided at three equally-disposed positions on the back surface of the first structure 10a, and the protrusion 107 is brought into contact with the edge of the surface of the second structure 10b so that the first structure The body 10a is supported by the second structure 10b.
  • the susceptor 10 shown in FIG. 5 (B) is also configured such that the fluid passage 105 has a refraction shape in the same manner as the fluid passage 105 shown in FIG. 5 (A). While the protrusions 107 are formed on the surface of the second structure 10b, the protrusions 109 as positioning means are formed on the side surfaces of the second structure 10b, and the protrusions 109 are formed on the rear side walls of the first structure 10a. The contact determines the normal positions of the first structure 10a and the second structure 10b.
  • the susceptor 10 shown in FIG. 5 (C) is also configured such that the shape of the fluid passage 105 is bent like the fluid passage 105 shown in FIG. 5 (A).
  • a protrusion 109 as a force positioning means formed on the surface of the second structure 10b is formed on the back side wall of the first structure 10a, and the protrusion 109 is formed on a side surface of the second structure 10b.
  • the contact positions determine the normal positions of the first structure 10a and the second structure 10b.
  • any of the susceptors 10 shown in FIGS. 5A to 5C like the susceptor 10 shown in FIG. 4, the entire circumference of the mating surface of the structures 10a and 10b becomes the fluid passage 105, The dopant released from the back surface W2 of the wafer during the phase growth can be more efficiently discharged from the fluid passage 105 formed around the whole surface of the wafer W without being introduced into the front surface W3 of the wafer.
  • the first structure 10a and the second structure 10b are simply joined together without forming a hole serving as the fluid passage 105, the fluid passage 105 consisting of a gap is formed. Good
  • the fluid passage 105 is shaped so that the radiant heat emitted from the halogen lamp 6b does not directly irradiate the wafer back surface W2 through the fluid passage 105, the fluid passage 105 faces the portion where the fluid passage 105 is provided. Supplied with the temperature of W This prevents a temperature difference from occurring between the temperature of the wafer w and the occurrence of uneven growth of the epitaxial layer.
  • the susceptor of the present invention has been described by taking the single-wafer-type vapor phase growth apparatus 1 as an example.
  • the susceptor of the present invention is not limited to this, and may be implemented in a conventional manner. Needless to say, it can be applied to a batch type vapor phase growth apparatus that processes a plurality of wafers at once.
  • a mixed reaction gas obtained by diluting 32.6 with hydrogen gas is supplied into the vapor phase growth apparatus, and a P-type gas having an epitaxial growth temperature of 1125 ° C, a thickness of about 6 m, and a specific resistance of about 10 ⁇ A epitaxial film was grown on the wafer surface.
  • the single-wafer-type vapor-phase growth apparatus shown in FIG. 1 was used, and the susceptor used had the shape shown in FIG. 3 (C).
  • the holes that constitute the fluid passage (the large-diameter hole is 2 mm wide, the small-diameter hole is lmm, and the slit is 2 mm wide) are formed at 4 mm pitch intervals (the distance between the slit centers) over the entire second vertical wall surface. Formed.
  • the single-wafer-type vapor-phase growth apparatus shown in FIG. 1 was used, and a fluid path was not formed in the susceptor.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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CN200580023240A CN100594261C (zh) 2004-05-18 2005-05-17 气相生长装置用基座
US11/569,139 US20080110401A1 (en) 2004-05-18 2005-05-17 Susceptor For Vapor-Phase Growth Reactor
EP05741152.2A EP1749900B1 (en) 2004-05-18 2005-05-17 Susceptor for vapor deposition apparatus
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