KR20070012520A - 기상 성장 장치용 서셉터 - Google Patents
기상 성장 장치용 서셉터 Download PDFInfo
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- KR20070012520A KR20070012520A KR1020067025104A KR20067025104A KR20070012520A KR 20070012520 A KR20070012520 A KR 20070012520A KR 1020067025104 A KR1020067025104 A KR 1020067025104A KR 20067025104 A KR20067025104 A KR 20067025104A KR 20070012520 A KR20070012520 A KR 20070012520A
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- susceptor
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- phase growth
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- 238000007740 vapor deposition Methods 0.000 title abstract 2
- 239000012530 fluid Substances 0.000 claims abstract description 85
- 238000001947 vapour-phase growth Methods 0.000 claims description 26
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000012071 phase Substances 0.000 claims description 6
- VJBCNMFKFZIXHC-UHFFFAOYSA-N azanium;2-(4-methyl-5-oxo-4-propan-2-yl-1h-imidazol-2-yl)quinoline-3-carboxylate Chemical compound N.N1C(=O)C(C(C)C)(C)N=C1C1=NC2=CC=CC=C2C=C1C(O)=O VJBCNMFKFZIXHC-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 95
- 239000007789 gas Substances 0.000 description 29
- 239000002019 doping agent Substances 0.000 description 24
- 229910052736 halogen Inorganic materials 0.000 description 12
- 150000002367 halogens Chemical class 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 241000894007 species Species 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 241000135309 Processus Species 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
- 기상 성장 시에 반도체 웨이퍼를 수용하기 위한 웨이퍼 포켓이 형성된 서셉터에 있어서,기상 성장 시의 가열원으로부터의 복사열이 상기 반도체 웨이퍼의 이면에 직접 조사되지 않는 형상의 유체 통로가 상기 웨이퍼 포켓의 표면과 이면 또는 측면과의 사이에 형성되어 있는 것을 특징으로 하는 기상 성장 장치용 서셉터.
- 기상 성장 시에 반도체 웨이퍼를 수용하기 위한 웨이퍼 포켓이 형성된 서셉터에 있어서,상기 웨이퍼 포켓은 상기 반도체 웨이퍼의 외주 가장자리부가 얹혀지는 제1 포켓부와, 해당 제1 포켓부보다 소직경이고 또한 하측에 형성된 제2 포켓부를 적어도 가지고,일단이 상기 제2 포켓부의 세로 벽면에 개구하는 동시에, 타단이 서셉터의 이면 또는 측면에 개구하는 유체 통로가 형성되어 있는 것을 특징으로 하는 기상 성장 장치용 서셉터.
- 청구항 2에 있어서,상기 유체 통로의, 상기 서셉터의 이면측의 개구는, 상기 제2 포켓부의 세로 벽면보다 외측에 형성되어 있는 것을 특징으로 하는 기상 성장 장치용 서셉터.
- 청구항 2에 있어서,상기 유체 통로의, 상기 서셉터의 이면측의 개구는, 상기 제2 포켓부의 세로 벽면보다 내측에 형성되어 있는 것을 특징으로 하는 기상 성장 장치용 서셉터.
- 청구항 2 내지 청구항 4중 어느 한 항에 있어서,상기 유체 통로는, 직선상 또는 비직선상으로 형성되어 있는 것을 특징으로 하는 기상 성장 장치용 서셉터.
- 청구항 2 내지 청구항 5중 어느 한 항에 있어서,상기 유체 통로가 복수 형성되고, 해당 유체 통로의 일단이 상기 제2 포켓부의 세로 벽면의 원주 방향을 따라 실질적으로 균등하게 개구되어 있는 것을 특징으로 하는 기상 성장 장치용 서셉터.
- 청구항 2 내지 청구항 6중 어느 한 항에 있어서,상기 유체 통로가 복수 형성되고, 해당 유체 통로의 일단이 상기 제2 포켓부의 세로 벽면의 연직 방향에 나란히 개구되어 있는 것을 특징으로 하는 기상 성장 장치용 서셉터.
- 기상 성장 시에 반도체 웨이퍼를 수용하기 위한 웨이퍼 포켓이 형성된 서셉 터에 있어서,상기 반도체 웨이퍼의 외주 가장자리부가 얹혀지는 제1 포켓부를 갖는 제1 구조체와, 해당 제1 구조체와의 간극으로 구성되는 유체 통로를 통해 제1 구조체의 하측에 설치된 제2 구조체를 적어도 가지고,상기 유체 통로의 일단이 상기 제1 포켓부의 하측의 세로 벽면에 개구하는 동시에, 타단이 서셉터의 이면 또는 측면에 개구하는 것을 특징으로 하는 기상 성장 장치용 서셉터.
- 청구항 7에 있어서,상기 유체 통로 내의 상기 제1 구조체 및/또는 제2 구조체에, 상기 제1 구조체를 상기 제2 구조체에 지지하기 위한 지지 수단이 형성되어 있는 것을 특징으로 하는 기상 성장 장치용 서셉터.
- 청구항 7 또는 청구항 8에 있어서,상기 제1 구조체와 제2 구조체의 정규 위치 관계를 결정하기 위한 위치 결정 수단을 갖는 것을 특징으로 하는 기상 성장 장치용 서셉터.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2004147638 | 2004-05-18 | ||
JPJP-P-2004-00147638 | 2004-05-18 | ||
PCT/JP2005/008979 WO2005111266A1 (ja) | 2004-05-18 | 2005-05-17 | 気相成長装置用サセプタ |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020087006174A Division KR20080031515A (ko) | 2004-05-18 | 2005-05-17 | 기상 성장 장치용 서셉터 |
Publications (2)
Publication Number | Publication Date |
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KR20070012520A true KR20070012520A (ko) | 2007-01-25 |
KR100889437B1 KR100889437B1 (ko) | 2009-03-24 |
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KR1020087006174A KR20080031515A (ko) | 2004-05-18 | 2005-05-17 | 기상 성장 장치용 서셉터 |
KR1020067025104A KR100889437B1 (ko) | 2004-05-18 | 2005-05-17 | 기상 성장 장치용 서셉터 |
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KR1020087006174A KR20080031515A (ko) | 2004-05-18 | 2005-05-17 | 기상 성장 장치용 서셉터 |
Country Status (7)
Country | Link |
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US (1) | US20080110401A1 (ko) |
EP (1) | EP1749900B1 (ko) |
JP (1) | JPWO2005111266A1 (ko) |
KR (2) | KR20080031515A (ko) |
CN (1) | CN100594261C (ko) |
TW (1) | TW200607883A (ko) |
WO (1) | WO2005111266A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101125738B1 (ko) * | 2010-03-17 | 2012-03-27 | 주식회사 엘지실트론 | 서셉터 및 이를 사용하는 에피텍셜 반응기 |
KR20220003070A (ko) * | 2019-06-28 | 2022-01-07 | 포커스 라이팅스 테크 씨오., 엘티디 | 흑연 웨이퍼 캐리어 및 이를 포함하는 mocvd반응 장치 |
Families Citing this family (222)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4379585B2 (ja) * | 2003-12-17 | 2009-12-09 | 信越半導体株式会社 | 気相成長装置およびエピタキシャルウェーハの製造方法 |
JP2006124758A (ja) * | 2004-10-27 | 2006-05-18 | Komatsu Electronic Metals Co Ltd | サセプタ、エピタキシャルウェーハの製造装置、およびエピタキシャルウェーハの製造方法 |
WO2007131547A1 (de) * | 2006-05-15 | 2007-11-22 | Aixtron Ag | Halbleiterbehandlungsvorrichtung für ein cvd- oder rtp-verfahren |
US8951351B2 (en) * | 2006-09-15 | 2015-02-10 | Applied Materials, Inc. | Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects |
US8852349B2 (en) * | 2006-09-15 | 2014-10-07 | Applied Materials, Inc. | Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects |
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- 2005-05-17 KR KR1020067025104A patent/KR100889437B1/ko active IP Right Grant
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Cited By (2)
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KR101125738B1 (ko) * | 2010-03-17 | 2012-03-27 | 주식회사 엘지실트론 | 서셉터 및 이를 사용하는 에피텍셜 반응기 |
KR20220003070A (ko) * | 2019-06-28 | 2022-01-07 | 포커스 라이팅스 테크 씨오., 엘티디 | 흑연 웨이퍼 캐리어 및 이를 포함하는 mocvd반응 장치 |
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EP1749900A4 (en) | 2009-10-28 |
TWI306479B (ko) | 2009-02-21 |
JPWO2005111266A1 (ja) | 2008-03-27 |
KR100889437B1 (ko) | 2009-03-24 |
WO2005111266A1 (ja) | 2005-11-24 |
EP1749900B1 (en) | 2014-09-03 |
CN100594261C (zh) | 2010-03-17 |
KR20080031515A (ko) | 2008-04-08 |
US20080110401A1 (en) | 2008-05-15 |
CN101023200A (zh) | 2007-08-22 |
EP1749900A1 (en) | 2007-02-07 |
TW200607883A (en) | 2006-03-01 |
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