US7843190B2 - Position detection apparatus - Google Patents

Position detection apparatus Download PDF

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US7843190B2
US7843190B2 US12/097,729 US9772906A US7843190B2 US 7843190 B2 US7843190 B2 US 7843190B2 US 9772906 A US9772906 A US 9772906A US 7843190 B2 US7843190 B2 US 7843190B2
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rectangular solid
hall
magnet
position detection
solid magnet
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US20090045807A1 (en
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Sosuke Nishida
Toshinori Takatsuka
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Asahi Kasei Microdevices Corp
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Asahi Kasei EMD Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/003—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring position, not involving coordinate determination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
    • G01D5/145—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the relative movement between the Hall device and magnetic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V3/00—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation
    • G01V3/08—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation operating with magnetic or electric fields produced or modified by objects or geological structures or by detecting devices
    • G01V3/10—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation operating with magnetic or electric fields produced or modified by objects or geological structures or by detecting devices using induction coils
    • G01V3/101—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation operating with magnetic or electric fields produced or modified by objects or geological structures or by detecting devices using induction coils by measuring the impedance of the search coil; by measuring features of a resonant circuit comprising the search coil
    • G01V3/102—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation operating with magnetic or electric fields produced or modified by objects or geological structures or by detecting devices using induction coils by measuring the impedance of the search coil; by measuring features of a resonant circuit comprising the search coil by measuring amplitude

Definitions

  • the present invention relates to a position detection apparatus using a magnet and Hall sensors.
  • a position detection method using a magnetic sensor as the sensor is a well known technique.
  • Patent Document 1 a method described in Patent Document 1 and the like mat be changed or revised. More specifically, as shown in FIG. 3 of Patent Document 1, the method discloses a technique that a moving part includes a magnet and the movement of the moving part is detected using a plurality of magnetic sensors.
  • the present inventors have hitherto discloses a position detection apparatus described in Patent Document 2 and so on.
  • this position detection mechanism is widely used as a key part of a vibration compensation apparatus of a digital still camera.
  • FIG. 13 shows a position detection method using Hall sensors 11 and 12 as a magnetic sensor.
  • a permanent magnet 23 is arranged opposite to the two Hall sensors 11 and 12 that are arranged with a predetermined distance. Respective Hall output voltages of the two Hall sensors 11 and 12 are varied according to a variation in magnetic flux density due to movement in a lateral direction (arrow direction). A differential value between Hall output voltages is processed by a differential signal processing circuit to detect a position of the permanent magnet 23 . In the position detection, the movement direction of the permanent magnet 23 is parallel to a line along the two Hall sensors 11 and 12 .
  • the size of the permanent magnet 23 , the distance between the Hall sensors 11 and 12 , and the distance between the Hall sensors 11 and 12 and the permanent magnet 23 are designed so that the differential value between the Hall output voltages is varied linearly contrast to the movement distance of the permanent magnet 23 in a lateral direction.
  • the configuration shows a satisfactory characteristic when the relative movement distance of the magnet and Hall sensors is several mm or less.
  • the configuration is used as a key part of a vibration compensation apparatus of a single-lens reflex digital camera.
  • the movement distance is larger than several mm, there is a problem that whole mechanism becomes larger.
  • practical use of the configuration cannot be reached.
  • the position detection when position detection is performed in a wide temperature range with high precision, the position detection may be performed such that variation of a characteristic due to variations in ambient temperature of the Hall sensor and magnet is suppressed by using an output signal processing method described in Patent Document 6.
  • one-axis direction position detection may be performed using a magnet and a single Hall sensor arranged as shown in FIG. 6 of Patent Document 5, so as to reduce the number of components.
  • position detection may be performed using specially-arranged two magnets as described in Patent Document 4.
  • position detection may be performed using a special magnet as shown in Patent Document 3 such that linearity of the difference between Hall output voltages of the two Hall sensors contrast to the lateral movement distance of permanent magnet is improved.
  • Patent Documents 7 and 8 As a method that is used for position detection with a wide range of approximately 10 mm and that does not include an encoder, there may be used a magnetic resistance element as shown in Patent Documents 7 and 8. This method is a well known technique that a rectangular shaped magnet (or a magnetic body) is inclined to a movement direction and a magnetic resistance element is arranged in a direction orthogonal to the movement direction. Thus, lateral movement of the moving body can be detected according to a variation of a longitudinal magnetic field.
  • Patent Document 1 Japanese Patent Laid-Open No. 2002-287891
  • Patent Document 2 WO 02/086694
  • Patent Document 3 Japanese Patent Laid-Open No. 2005-284169
  • Patent Document 4 Japanese Patent Laid-Open No. 2004-245765
  • Patent Document 5 Japanese Patent Laid-Open No. 2002-229090
  • Patent Document 6 Japanese Patent Laid-Open No. 2004-348173
  • Patent Document 7 Japanese Patent Laid-Open No. 59-159578
  • Patent Document 8 Japanese Patent Laid-Open No. 6-229708
  • a position detection apparatus using a magnet with a high precision of 0.1% to position detection range has become practical use only within the limitation that the movement distance of the magnet is several mm or less.
  • the magnet resistance element using ferromagnetic thin film detects a magnetic field in a horizontal direction to the surface of the sensor, the element cannot be positioned so as to utilize the energy of magnet most efficiently (cannot be positioned so as to face the magnetization surface of magnet). Thus, the size of the magnet must be increased to obtain a magnetic field enough for position detection.
  • the precision requirement (1.0% or less to position detection range) of position detection used in a digital video camera, digital video camera or the like cannot be satisfied.
  • the precision is fastened to only 2.0% or so to movement range so far.
  • an object of the present invention is to provide a position detection apparatus with miniaturization, a simple circuit configuration, and a function for detecting a distance in a wide range with high precision, even though a component using a magnetic sensor as a Hall sensor may be composed of a general-purpose article or easily-available part.
  • the present inventors paid attention to a large difference of precision between about 0.1% and 2.0% regarding position detection range, and carefully studied an essential difference between a detection system using a Hall sensor and a detection system using a magnetic resistance element. As a result, the conclusion is made in that the magnetic resistance element detects an object per a surface unit but the Hall sensor detects the object per a point unit.
  • the present inventors made an attempt to study the possibility of constructing a detection system with a wide range and high precision by using of a Hall sensor that is not effected by magnetic field distribution.
  • a position detection apparatus comprises: a magnetic flux detection means having one or more pairs of Hall sensors, each pair comprised of two Hall sensors, each Hall sensor arranged on a substrate and having a magnetism sensing direction orthogonal to a substrate; and a rectangular solid magnet having an N-pole and an S-pole magnetized in a direction orthogonal to the substrate, wherein the rectangular solid magnet is arranged movably in a direction orthogonal to a line connecting the centers of magnetism sensing sections of the each pair of two Hall sensors and is arranged movably in a plane parallel to the substrate, wherein the rectangular solid magnet has a long side and a short side of a quadrangle when the rectangular solid magnet is projected on any plane parallel to the substrate; and wherein the long side of the rectangular solid magnet has a predetermined inclination angle to the line connecting the centers of magnetism sensing sections of the each pair of two Hall sensors of the magnetic flux detection means.
  • the “Movably in a direction orthogonal to a line connecting the centers of magnetism sensing sections of the each pair of two Hall sensors and movably in a plane parallel to the substrate” means that when a line connecting the centers of magnetism sensing sections of the Hall sensors and a line indicating a direction of magnet movement are projected on any identical plane parallel to the substrate, respective extended lines thereof cross at right angles.
  • the “The long side of the rectangular solid magnet has a predetermined inclination angle relative to the line connecting the centers of magnetism sensing sections of the each pair of two Hall sensors in the magnetic flux detection means” means that when a line containing the long side of the rectangular solid magnet and a line connecting the centers of magnetism sensing sections of the two Hall sensors are projected on any identical plane parallel to the substrate, respective extended lines thereof cross at a predetermined angle.
  • the magnetic flux detection means having one or more pairs of Hall sensors, each pair being constituted of two Hall sensors is preferably arranged opposite a surface of the S-pole or the N-pole of the rectangular solid magnet.
  • the above expression “the magnetic flux detection means having one or more pairs of Hall sensors, each pair being constituted of two Hall sensors, is arranged opposite a surface of the S-pole or the N-pole of the rectangular solid magnet” means that arrangement is made so that, when the rectangular solid magnet and the magnetism sensing sections of multiple Hall sensors constituting the magnetic flux detection means are projected on any identical plane parallel to the substrate, a projected part of magnetism sensing section of at least one Hall sensor of the multiple Hall sensors is included in a projected part of the rectangular solid magnet.
  • the magnetic resistance element When a position is detected with a wide range using a magnetic resistance element, the magnetic resistance element typically has a large magnetism sensing section (the size of magnetism sensing section of a typical semiconductor magnetic resistance element being about 2400 ⁇ m ⁇ 2000 ⁇ m) and detects a magnetic field in a wide range, compared to a Hall sensor.
  • the precision may be affected by the magnetic field distribution (the magnetic field being not uniform in the magnetism sensing plane) in the magnetism sensing plane.
  • a Hall sensor (the size of magnetism sensing section of the Hall sensor being about 100 ⁇ m ⁇ 100 ⁇ m), that has a magnetism sensing section significantly smaller than the magnetic resistance element and that can detect a magnetic field over a range being substantially a point, is used.
  • a position detection apparatus with a significantly high precision can be provided compared to the position detection apparatus using a conventional magnetic resistance element.
  • the present invention is characterized in that, in the ratio of length between the short side and long side of the rectangular solid magnet in a plane having a movement direction of the rectangular solid magnet, the length of the long side is set to 3.5 or more to 8.0 or less when the length of the short side is set to 1.
  • the present invention is characterized in that the length of a line connecting the centers of magnetism sensing sections of the each pair of two Hall sensors of the magnetic flux detection means is 1.0 mm or less, and a predetermined inclination angle of a long side direction of the rectangular solid magnet to a line connecting the centers of magnetism sensing sections of the each pair of two Hall sensors of the magnetic flux detection means is 67.0 to 89.3 degrees.
  • the present invention is characterized in that a position of the rectangular solid magnet can be detected with a precision of 1% or less to a movement range that the rectangular solid magnet is movable.
  • the present invention is characterized in that a position of the rectangular solid magnet is calculated using a difference of Hall output voltages between the each pair of two Hall sensors of the magnetic flux detection means and a sum of Hall output voltages of the each pair of two Hall sensors of the magnetic flux detection means.
  • the present invention is characterized in that the Hall sensor is a Hall sensor that does not have a magnetic chip for magnetic amplification.
  • the Hall sensor is a Hall sensor that includes III-V family chemical compound semiconductor such as GaAs, InAs or InSb.
  • the present invention is characterized in that the Hall sensor is a Hall sensor that includes IV family semiconductor such as Si or Ge.
  • the present invention is characterized in that, the each pair of Hall sensors arranged on the substrate of the magnetic flux detection means are incorporated integrally into a single package.
  • the present invention it is possible to suppress an effect on detection precision due to non-uniformity in a magnetic field of the magnetism sensing section. Even when constituent components such as magnet and magnetic flux detection means are constructed by using a general-purpose part, easily-available part or the like, miniaturization can be achieved with a simple circuit configuration. Furthermore, a position detection apparatus that detects a distance in a wide range of about 10 mm (such detection being not possible to perform according to the conventional art) with a high precision of 1% or less can be constructed.
  • FIG. 1A is a cross-sectional view showing a schematic configuration of a position detection apparatus according to a first embodiment of the present invention
  • FIG. 1B is a top view showing a schematic configuration of the position detection apparatus according to the first embodiment of the present invention
  • FIG. 2 is a configuration diagram showing a configuration of a detection circuit of the position detection apparatus of FIG. 1 ;
  • FIG. 3A is an explanatory diagram of a rectangular solid magnet showing an exemplary magnet shape applicable to the present invention
  • FIG. 3B is an explanatory diagram of a square pole magnet showing an exemplary magnet shape applicable to the present invention
  • FIG. 3C is an explanatory diagram of a triangle pole magnet showing an exemplary magnet shape applicable to the present invention
  • FIG. 3D is an explanatory diagram of a triangular pyramid magnet showing an exemplary magnet shape applicable to the present invention
  • FIG. 3E is an explanatory diagram of a quadrangular pyramid magnet showing an exemplary magnet shape applicable to the present invention
  • FIG. 3F is an explanatory diagram of an elliptic column magnet showing an exemplary magnet shape applicable to the present invention
  • FIG. 4A is an explanatory diagram showing a variation in magnetic flux density at a position of a first Hall sensor 32 a to the movement distance of a magnet;
  • FIG. 4B is an explanatory diagram showing a variation in magnetic flux density at a position of a second Hall sensor 32 b to the movement distance of a magnet;
  • FIG. 4C is an explanatory diagram showing a variation in differential magnetic flux density obtained by subtracting a magnetic flux density at a position of a first Hall sensor 32 a from a magnetic flux density at a position of a second Hall sensor 32 b to the movement distance of a magnet;
  • FIG. 5A is an explanatory diagram showing a result of calculating based on magnetic simulation, a value (a ratio between a difference and sum of output voltages) obtained by dividing a differential value of Hall output voltages between Hall sensors by a sum of Hall output voltages to the movement distance of a rectangular solid magnet when parameters are optimized using the position detection apparatus of FIG. 1 ;
  • FIG. 5B is an enlarged view of FIG. 5A showing a result of calculating based on magnetic simulation, a value (a ratio between a difference and sum of output voltages) obtained by dividing a differential value of output voltage between Hall sensors by a sum of output voltages to the movement distance of a rectangular solid magnet when parameters are optimized using the position detection apparatus of FIG. 1 ;
  • FIG. 6 is an explanatory diagram showing an error in position detection to the movement distance of a rectangular solid magnet, calculated based on a difference value between an ideal straight line and the magnetic simulation result shown in FIG. 5A ;
  • FIG. 7A is a cross-sectional view showing a schematic configuration of a conventional position detection apparatus, as a comparative example, using a magnet and Hall sensors;
  • FIG. 7B is a top view showing a schematic configuration of the conventional position detection apparatus, as a comparative example, using a magnet and Hall sensors;
  • FIG. 8A is a cross-sectional view showing a schematic configuration of the position detection apparatus of FIG. 1A as same magnification for comparison with conventional position detection apparatus;
  • FIG. 8B is a top view showing a schematic configuration of the position detection apparatus of FIG. 1B for as same magnification comparison with conventional position detection apparatus;
  • FIG. 9A is a cross-sectional view showing the configuration of the conventional position detection apparatus of FIG. 7A as same magnification
  • FIG. 9B is a top view showing the configuration of the conventional position detection apparatus of FIG. 7B as same magnification
  • FIG. 10A is a cross-sectional view showing a schematic configuration of a position detection apparatus according to a second embodiment of the present invention.
  • FIG. 10B is a top view showing a schematic configuration of the position detection apparatus according to the second embodiment of the present invention.
  • FIG. 11 is a configuration diagram showing a configuration of a detection circuit of the position detection apparatus of FIGS. 10A and 10B ;
  • FIG. 12 is an explanatory diagram showing a variation in length of a rectangular solid magnet in a long side direction according to a third embodiment of the present invention when a desired position detection range is varied at a pitch of 1 mm;
  • FIG. 13 is an explanatory diagram showing a conventional position detection method using Hall sensors.
  • FIGS. 1 to 9 A first embodiment of the present invention will be described with reference to FIGS. 1 to 9 .
  • a position detection apparatus can be constructed using various shapes of magnets and various types of Hall sensors.
  • FIGS. 1A and 1B shows a schematic configuration of a position detection apparatus 30 .
  • Reference numeral 31 denotes a rectangular solid magnet (a magnetic flux generation means) having one N-pole and one S-pole separately magnetized.
  • Reference numeral 32 a and 32 b denote each Hall Sensor composing a pair of two Hall sensors (magnetic flux detection means).
  • Reference numeral 33 denotes a substrate having the Hall sensor 32 a (first Hall sensor) and the Hall sensor 32 b (second Hall sensor).
  • the rectangular solid magnet 31 is magnetized in a direction orthogonal to the substrate 33 having the Hall sensors 32 a and 32 b.
  • the rectangular solid magnet 31 is arranged movably along an x-direction on a plane 100 facing the substrate 33 .
  • the direction of a line connecting the center of magnetism sensing section of the Hall sensor 32 a with the center of magnetism sensing section of the Hall sensor 32 b is set as a Y-direction.
  • the direction orthogonal to the Y-direction is set as an X-direction.
  • the Hall sensors 32 a and 32 b are constituted as a pair of Hall sensors.
  • the Hall sensors 32 a and 32 b are arranged at an opposite position to a face of the rectangular solid magnet 31 .
  • Reference numeral 34 a denotes a length of the rectangular solid magnet 31 in a long side direction X.
  • Reference numeral 34 b denotes a length of the rectangular solid magnet 31 in a short side direction Y.
  • Reference numeral 34 c denotes a length of the rectangular solid magnet in a thickness direction Z (a length of the magnet in a magnetization direction).
  • Reference numeral 35 a denotes a distance from the plane 100 of the rectangular solid magnet 31 opposite to the substrate 33 of the Hall sensors 32 a and 32 b to the center of magnetism sensing section of the Hall sensors 32 a and 32 b.
  • Reference numeral 35 b denotes a distance between the center of magnetism sensing section of the Hall sensor 32 a and the center of magnetism sensing section of the Hall sensor 32 b.
  • FIG. 2 shows an exemplary circuit configuration of the position detection apparatus 30 .
  • the position detection apparatus 30 includes a driving and processing circuit for the two Hall sensors 32 a and 32 b.
  • the first Hall sensor 32 a includes a positive pole input terminal A, positive pole output terminal B, negative pole input terminal C and negative pole output terminal D.
  • the second Hall sensor 32 b includes a positive pole input terminal E, positive pole output terminal F, negative pole input terminal G and negative pole output terminal H.
  • the positive pole input terminal A of the first Hall sensor 32 a is connected to the positive pole input terminal E of the second Hall sensor 32 b .
  • the negative pole input terminal C of the first Hall sensor 32 a is connected to the negative pole input terminal G of the second Hall sensor 32 b .
  • the connected terminals are used as input terminals of the drive circuit.
  • the positive pole output terminal B and negative pole output terminal D of the first Hall sensor 32 a are connected to a first differential amplifier 21 a of a differential signal processing circuit 21 .
  • the positive pole output terminal F and negative pole output terminal H of the second Hall sensor 32 b are connected to a second differential amplifier 21 b of the differential signal processing circuit 21 .
  • An output terminal of the first differential amplifier 21 a and an output terminal of the second differential amplifier 21 b are connected to an input terminal of a third differential amplifier 21 c.
  • an output value Vc as a differential value (Va ⁇ Vb) between Hall output voltage Va of the first Hall sensor 32 a and Hall output voltage Vb of the second Hall sensor 32 b is outputted from an output terminal of the third differential amplifier 21 c .
  • the output value from the output terminal of the third differential amplifier 21 c corresponds to a position of the rectangular solid magnet 31 .
  • the input terminals of the first Hall sensor 32 a and second Hall sensor 32 b are connected in parallel, but the present embodiment is not limited to such parallel connection.
  • the differential amplifiers 21 a to 21 c may be constructed as higher-precision instrumentation amplifiers.
  • Angle ⁇ is an angle between a line 101 that perpendicularly bisects the short side of the rectangular solid magnet 31 and a line 102 connecting the centers of magnetism sensing sections of the two Hall sensors 32 a and 32 b .
  • the rectangular solid magnet 31 moves only in an X-axis direction.
  • “moving in an X-axis direction” means that the rectangular solid magnet 31 moves in a direction parallel to an X-axis direction while setting angle ⁇ between the longitudinal direction of the rectangular solid magnet 31 and a Y-axis direction.
  • the following parameters are optimally set such that a differential value of Hall output voltage between the Hall sensors 32 a and 32 b corresponding to a movement distance of the rectangular solid magnet 31 has linearity sufficient to achieve a resolution required for a desired position detection range.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X the length 34 b of the rectangular solid magnet 31 in a short side direction Y, the length 34 c of the rectangular solid magnet 31 in a thickness direction Z (the length of the magnet in a magnetization direction)
  • the distance 35 b between the center of magnetism sensing section of the Hall sensor 32 a and the center of magnetism sensing section of the Hall sensor 32 b the angle ⁇ between the line 101 that perpendicularly bisects the
  • the constituent components of the position detection apparatus 30 may have the following configuration other than the above described one.
  • FIGS. 3A to 3F shows variations of the rectangular solid magnet.
  • magnets of various shapes including rectangular solid (cube) 60 , polygonal pole such as square pole 61 or triangular pole 62 , polygonal pyramid such as triangular pyramid 63 or quadrangular pyramid 64 , and cylindrical column (elliptic column) 65 .
  • the Hall sensor can be used various type of Hall sensors, such as a Hall sensor that does not include a magnetic chip for magnetic amplification, a Hall sensor composed of III-V family chemical compound semiconductor such as GaAs, InAs or InSb, or a Hall sensor composed of IV family semiconductor such as Si or Ge.
  • a Hall sensor structured by combining the above materials can also be used.
  • the Hall sensors can be put integrally into a single package.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is 9.7 mm.
  • the length 34 b of the rectangular solid magnet 31 in a short side direction Y is 1.4 mm.
  • the length 34 c of the rectangular solid magnet 31 in a thickness direction Z is 1.0 mm.
  • the distance 35 a from the plane 100 of the rectangular solid magnet 31 opposite to the Hall sensors 32 a and 32 b to the center of magnetism sensing section of the Hall sensors 32 a and 32 b is 0.5 mm.
  • the distance 35 b between the center of magnetism sensing section of the Hall sensor 32 a and the center of magnetism sensing section of the Hall sensor 32 b is 0.8 mm.
  • an arrangement error of the Hall sensors 32 a and 32 b can be reduced in a design that the Hall sensors 32 a and 32 b are structured as a single package compared to a design that the Hall sensors 32 a and 32 b are separately mounted on the substrate.
  • high precision can be achieved in the position detection apparatus.
  • all pairs of Hall sensors 32 a and 32 b can be arranged on a Si substrate.
  • the Hall sensors 32 a and 32 b are incorporated into a single package preferably.
  • FIGS. 4A to 4C show a variation in magnetic flux density to a movement distance of the rectangular solid magnet 31 .
  • FIG. 4A shows a variation 70 of magnetic flux density at a position of the first Hall sensor 32 a to a movement distance of a magnet.
  • FIG. 4B shows a variation 71 of magnetic flux density at a position of the second Hall sensor 32 b to a movement distance of a magnet.
  • FIG. 4C shows a variation 72 in differential magnetic flux density obtained by subtracting a magnetic flux density at the position of the first Hall sensor 32 a from a magnetic flux density at the position of the second Hall sensor 32 b to a movement distance of a magnet.
  • the differential magnetic flux density calculated by subtracting a magnetic flux density at the position of the first Hall sensor 32 a from a magnetic flux density at the position of the second Hall sensor 32 b to a movement distance of a magnet can be varied almost linearly.
  • the Hall output voltage is proportional to the magnitude of magnetic flux density.
  • the differential value between output voltage Va of the first Hall sensor 32 a and output voltage Vb of the second Hall sensor 32 b nearly has a linear output characteristic to the a movement distance of a magnet.
  • FIGS. 5A and 5B show a result of magnetic simulation, a value (ratio between a difference and sum of Hall output voltages) calculated by dividing a differential value (Va ⁇ Vb) between Hall output voltage Va of the Hall sensor 32 a and Hall output voltage Vb of the Hall sensor 32 b by a sum (Va+Vb) of the output voltages to movement of the rectangular solid magnet 31 .
  • FIG. 5B is an enlarged view of an area 80 of FIG. 5A .
  • Reference character 81 denotes an ideal straight line.
  • the sensitivity of the two Hall sensors 32 a and 32 b is set to 2.4 mV/mT (a typical Hall sensor sensitivity) and residual magnetic flux density Br of the rectangular solid magnet 31 is set to 1200 mT (a typical neodymium sintered magnet value).
  • the position detection apparatus 30 From the result of magnetic simulation shown in FIGS. 5A and 5B , the position detection apparatus 30 according to the present invention is used.
  • the value (ratio between a difference and sum of the output voltages) that calculated by dividing a differential value between Hall output voltage Va of the Hall sensor 32 a and Hall output voltage Vb of the Hall sensor 32 b by a sum of the output voltages to movement of the rectangular solid magnet 31 can have high linearity and matches well with an ideal straight line.
  • the ideal straight line 81 is a line produced by connecting a value (ratio between a difference and sum of Hall output voltages) that calculated by dividing a differential value (Va ⁇ Vb) between Hall output voltages of the two Hall sensors 32 a and 32 b by a sum (Va+Vb) of the Hall output voltages when the movement distance of the rectangular solid magnet 31 is +4 mm, with a value (ratio between a difference and sum of Hall output voltages) that calculated by dividing a differential value (Va ⁇ Vb) between Hall output voltages of the two Hall sensors 32 a and 32 b by a sum (Va+Vb) of the Hall output voltages when the movement distance of the rectangular solid magnet 31 is ⁇ 4 mm.
  • the value (ratio between a difference and sum of the Hall output voltages) that calculated by dividing a differential value (Va ⁇ Vb) between Hall output voltage Va of the first Hall sensor 32 a and Hall output voltage Vb of the second Hall sensor 32 b by a sum (Va+Vb) of the output voltages is a little different from the ideal straight line.
  • a position is detected by using the value of the ideal straight line. Accordingly, when the difference between the value of the ideal straight line 81 and the value (ratio between a difference and sum of the Hall output voltages) that calculated by dividing a differential value (Va ⁇ Vb) between Hall output voltage Va of the first Hall sensor 32 a and Hall output voltage Vb of the second Hall sensor 32 b by a sum (Va+Vb) of the Hall output voltages is large, the error of position detection becomes large.
  • FIG. 6 is a view showing an error of position detection calculated by the difference between the ideal straight line 81 and the result of simulation shown in FIGS. 5A and 5B .
  • an error of position detection is about 20 ⁇ m at maximum, and a value of resolution is 0.375% to a full stroke of 8 mm.
  • a position can be detected with high-precision.
  • a line calculated by least-square method may be set to the ideal straight line 81 .
  • the error of position detection is further reduced.
  • high resolution can be obtained.
  • a comparative example is described using the conventional art, similarly to the above described example.
  • a position is detected with a range of 8 mm ( ⁇ 4 mm) at a resolution of 30 ⁇ m in a wide temperature range.
  • FIGS. 7A and 7B show a schematic configuration of a conventional position detection apparatus using a magnet and Hall sensors.
  • Reference numeral 41 denotes a rectangular solid magnet magnetized in a direction orthogonal to a plane 200 opposite to Hall sensors.
  • Reference numerals 42 a and 42 b denote Hall sensors.
  • Reference numeral 43 denotes a substrate having the Hall sensors 42 a and 42 b .
  • Reference numeral 44 a denotes a length of the rectangular solid magnet 41 in a long side direction X.
  • Reference numeral 44 b denotes a length of the rectangular solid magnet 41 in a short side direction Y.
  • Reference numeral 44 c denotes a length of the rectangular solid magnet 41 in a thickness direction Z (a length of the magnet in a magnetization direction).
  • Reference numeral 45 a denotes a distance from the plane 200 of the rectangular solid magnet 41 opposite to the Hall sensors 42 a and 42 b to the center of magnetism sensing section of the Hall sensors 42 a and 42 b .
  • Reference numeral 45 b denotes a distance between the center of magnetism sensing section of the Hall sensor 42 a and the center of magnetism sensing section of the Hall sensor 42 b.
  • the rectangular solid magnet 41 moves only in an X-axis direction shown in the Figures.
  • the Hall sensors 42 a and 42 b are arranged in a horizontal plane to movement direction of the rectangular solid magnet 41 .
  • the length 44 a of the rectangular solid magnet 41 in a long side direction X is 15.2 mm.
  • the length 44 b of the rectangular solid magnet 41 in a short side direction Y is 15.0 mm.
  • the length 44 c of the rectangular solid magnet 41 in a thickness direction Z (the length of the magnet in a magnetization direction) is 4.3 mm.
  • the distance 45 a from the plane of the rectangular solid magnet 41 opposite to the Hall sensors to the magnetism sensing section of the Hall sensors is 6.0 mm.
  • the distance 45 b between the center of magnetism sensing section of the Hall sensor 42 a and the center of magnetism sensing section of the Hall sensor 42 b is 11.3 mm.
  • the configuration of the position detection apparatus 30 of the above described example of FIG. 1 is shown as a view at the same magnification in FIGS. 8A and 8B .
  • the configuration of the conventional example for comparison with the present invention is shown as the same magnification in FIGS. 9A and 9B .
  • the configuration of the position detection apparatus 30 according to the present invention of FIGS. 8A and 8B has an advantageous effect that the size and thickness of position detection apparatus can be significantly reduced, compared to the configuration of the conventional example of FIGS. 9A and 9B for comparison.
  • FIGS. 10 and 11 A second embodiment of the present invention will be described with reference to FIGS. 10 and 11 .
  • the same reference characters are applied to parts corresponding to the above described first example, and an explanation thereof is omitted.
  • Multiple pairs of two Hall sensors may be combined in the position detection apparatus 30 of the above example of FIG. 1 .
  • FIGS. 11A and 10B show an exemplary configuration of a position detection apparatus 50 using a magnet and Hall sensors according to the present invention.
  • Reference numeral 51 denotes a rectangular solid magnet magnetized in a direction orthogonal to a plane 100 opposite to Hall sensors 52 a , 52 b , 52 c and 52 d .
  • Reference numeral 52 a denotes a first Hall sensor.
  • Reference numeral 52 b denotes a second Hall sensor.
  • Reference numeral 52 c denotes a third Hall sensor.
  • Reference numeral 52 d denotes a fourth Hall sensor.
  • Reference numeral 53 denotes a substrate having one pair of Hall sensors 52 a and 52 b and the other pair of Hall sensors 52 c and 52 d.
  • Reference numeral 54 a denotes a length of the rectangular solid magnet 51 in a long side direction X.
  • Reference numeral 54 b denotes a length of the rectangular solid magnet 51 in a short side direction Y.
  • Reference numeral 54 c denotes a length of the rectangular solid magnet 51 in a thickness direction Z (a length of the magnet in a magnetization direction).
  • Reference numeral 55 a denotes a distance from the plane 100 of the rectangular solid magnet 51 opposite to the Hall sensors 52 a , 52 b , 52 c and 52 d to the center of magnetism sensing section of the Hall sensors 52 a , 52 b , 52 c and 52 d.
  • Reference numeral 55 b denotes a distance of a line 111 connecting the center of magnetism sensing section of the Hall sensor 52 a in the one pair with the center of magnetism sensing section of the Hall sensor 52 b .
  • Reference numeral 55 b denotes a distance of a line 112 connecting the center of magnetism sensing section of the Hall sensor 52 c in the other pair with the center of magnetism sensing section of the Hall sensor 52 d.
  • FIG. 11 shows an exemplary circuit configuration of the position detection apparatus 50 .
  • the positive pole output terminal B and negative pole output terminal D of the first Hall sensor 52 a are connected to a first differential amplifier 21 a of a differential signal processing circuit 21 .
  • the positive pole output terminal F and negative pole output terminal H of the second Hall sensor 52 b are connected to a second differential amplifier 21 b of the differential signal processing circuit 21 .
  • Output signals of the first differential amplifier 21 a and second differential amplifier 21 b are connected to a third differential amplifier 21 c.
  • the positive pole output terminal B and negative pole output terminal D of the third Hall sensor 52 a are connected to a first differential amplifier 22 a of a differential signal processing circuit 22 .
  • the positive pole output terminal F and negative pole output terminal H of the second Hall sensor 52 d are connected to a second differential amplifier 22 b of the differential signal processing circuit 22 .
  • Output signals of the first differential amplifier 22 a and second differential amplifier 22 b are sent to a third differential amplifier 22 c.
  • a position is detected with a range of 4 mm in the range of 8 mm using a signal outputted from the differential signal processing circuit 21 connected to the first Hall sensor 52 a and second Hall sensor 52 b .
  • a position is detected with another range of 4 mm using a signal outputted from the differential signal processing circuit 22 connected to the third Hall sensor 52 c and fourth Hall sensor 52 d.
  • output value Vc 1 as a differential value (Va ⁇ Vb) between a Hall output voltage of the first Hall sensor 52 a and a Hall output voltage of the second Hall sensor 52 b is outputted from the output terminal of the third differential amplifier 21 c .
  • the output values outputted from the output terminals correspond to a position of the rectangular solid magnet 51 respectively.
  • the rectangular solid magnet 51 moves only in an X-axis direction.
  • “moves only in an X-axis direction” means that, similarly to the above described first example, the rectangular solid magnet 51 moves in a direction parallel to an X-axis direction while maintaining angle ⁇ to a Y-axis direction.
  • the Hall sensors 52 a and 52 b are arranged on a line orthogonal to movement direction of the rectangular solid magnet 51 .
  • the Hall sensors 52 c and 52 d are arranged on the line 112 that is parallel to the line 111 and is distant 4 mm from the line 111 .
  • the line 111 is connected to the center of magnetism sensing section of the Hall sensor 52 a and the center of magnetism sensing section of the Hall sensor 52 b.
  • a position is detected with a range of 4 mm in the position detection range of 8 mm using the Hall sensors 52 a and 52 b .
  • a position is detected with another range of 4 mm using the Hall sensors 52 c and 52 d.
  • the length 54 a of the rectangular solid magnet 51 in a long side direction X is 5.0 mm.
  • the length 54 b of the rectangular solid magnet 51 in a short side direction Y is 1.4 mm.
  • the length 54 c of the rectangular solid magnet 51 in a thickness direction Z (the length of the magnet in a magnetization direction) is 1.0 mm.
  • the distance 55 a from the plane 100 of the rectangular solid magnet 51 opposite to the Hall sensors 52 a , 52 b , 52 c and 52 d to the center of magnetism sensing section of the Hall sensors 52 a , 52 b , 52 c and 52 d is 0.5 mm.
  • the distance 55 b between the center of magnetism sensing section of the Hall sensor 52 a and the center of magnetism sensing section of the Hall sensor 52 b is 0.8 mm.
  • the length of the rectangular solid magnet 31 in a long side direction X is 9.7 mm.
  • the length is 5.0 mm and thus the length can be reduced by half.
  • Hall sensors 52 a , 52 b , 52 c and 52 d two pairs of Hall sensors (Hall sensors 52 a , 52 b , 52 c and 52 d ), i.e., four Hall sensors are described.
  • the number of Hall sensors is increased by 2n (n is the number of pairs and is an integral number equal or larger than 1), the position detection apparatus can be further miniaturized.
  • FIG. 12 A third embodiment of the present invention will be described with reference to FIG. 12 .
  • the same reference characters are applied to parts corresponding to the above described examples, and an explanation thereof is omitted.
  • the present example is a variation of the position detection apparatus 30 of the above described first example of FIG. 1 .
  • the length 34 b of the rectangular solid magnet 31 in a short side direction Y is set to 1.4 mm.
  • the length 34 c of the rectangular solid magnet 31 in a thickness direction Z (the length of the magnet in a magnetization direction) is set to 1.0 mm.
  • the distance 35 a from the plane 100 of the rectangular solid magnet 31 opposite to the Hall sensors 32 a and 32 b to the center of magnetism sensing section of the Hall sensors 32 a and 32 b is set to 0.5 mm.
  • the distance 35 b between the center of magnetism sensing section of the Hall sensor 32 a and the center of magnetism sensing section of the Hall sensor 32 b is set to 0.8 mm.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X was examined using a magnetic simulation.
  • the desired position detection range is 10 mm
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is 10.8 mm.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is 10.1 mm.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is 9.3 mm.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is 8.6 mm.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is 7.9 mm.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is 7.1 mm.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is 6.5 mm.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is 5.8 mm.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is 5.2 mm.
  • FIG. 12 is a table showing a variation in the length 34 a of the rectangular solid magnet 31 in a long side direction X when the desired range of position detection is varied at a pitch of 1 mm with a range from 2 mm to 10 mm.
  • the parameters except the length 34 a of the rectangular solid magnet 31 in a long side direction X are set to the above described values.
  • the length of the rectangular solid magnet 31 in a long side direction X is set to be longer in effect.
  • the value of ratio between short side direction Y and long side direction X of the rectangular solid magnet 31 is calculated by using the numerical values of FIG. 12 .
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is set to 10.9 mm.
  • the length 34 b of the rectangular solid magnet 31 in a short side direction Y is set to 1.7 mm.
  • the length 34 c of the rectangular solid magnet 31 in a thickness direction Z (the length of the magnet in a magnetization direction) is set to 2.0 mm.
  • the distance 35 a from the plane 100 of the rectangular solid magnet 3 opposite to the Hall sensors 32 a and 32 b to the center of magnetism sensing section of the Hall sensors 32 a and 32 b is set to 1.0 mm.
  • the distance 35 b between the center of magnetism sensing section of the Hall sensor 32 a and the center of magnetism sensing section of the Hall sensor 32 b is set to 0.8 mm.
  • a position is detected with a range of 8 mm ( ⁇ 4 mm) at a resolution of 40 ⁇ m similarly to the fourth example.
  • the parameters may be set as follows.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is set to 9.5 mm.
  • the length 34 b of the rectangular solid magnet 31 in a short side direction Y is set to 1.0 mm.
  • the length 34 c of the rectangular solid magnet 31 in a thickness direction Z (the length of the magnet in a magnetization direction) is set to 2.0 mm.
  • the distance 35 a from the plane 100 of the rectangular solid magnet 3 opposite to the Hall sensors 32 a and 32 b to the center of magnetism sensing section of the Hall sensors 32 a and 32 b is set to 0.5 mm.
  • the distance 35 b between the center of magnetism sensing section of the Hall sensor 32 a and the center of magnetism sensing section of the Hall sensor 32 b is set to 0.8 mm.
  • a position is detected with a range of 8 mm ( ⁇ 4 mm) at a resolution of 40 ⁇ m similarly to the fourth and fifth examples.
  • the parameters may be set as follows.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is set to 11.0 mm.
  • the length 34 b of the rectangular solid magnet 31 in a short side direction Y is set to 4.0 mm.
  • the length 34 c of the rectangular solid magnet 31 in a thickness direction Z (the length of the magnet in a magnetization direction) is set to 2.8 mm.
  • the distance 35 a from the plane 100 of the rectangular solid magnet 3 opposite to the Hall sensors 32 a and 32 b to the center of magnetism sensing section of the Hall sensors 32 a and 32 b is set to 3.0 mm.
  • the distance 35 b between the center of magnetism sensing section of the Hall sensor 32 a and the center of magnetism sensing section of the Hall sensor 32 b is set to 3.7 mm.
  • the size and the arrangement of the rectangular solid magnet 31 are varied.
  • a position can be detected with a high precision (a precision of 0.5% to the position detection range) in a wide range.
  • the size of the rectangular solid magnet 31 , the distance 35 a from the plane 100 of the rectangular solid magnet 3 opposite to the Hall sensors 32 a and 32 b to the center of magnetism sensing section of the Hall sensors 32 a and 32 b , the distance 35 b between the center of magnetism sensing section of the Hall sensor 32 a and the center of magnetism sensing section of the Hall sensor 32 b , and the like are increased in some extent.
  • the angle ⁇ between the line 101 that perpendicularly bisects the short side of the rectangular solid magnet 31 and the line 102 connecting the centers of magnetism sensing section of the two Hall sensors 32 a and 32 b is not particularly limited.
  • the length 34 a of the rectangular solid magnet 31 in a long side direction X is set to 11.9 mm.
  • the length 34 b of the rectangular solid magnet 31 in a short side direction Y is set to 1.6 mm.
  • the length 34 c of the rectangular solid magnet 31 in a thickness direction Z (the length of the magnet in a magnetization direction) is set to 2.2 mm.
  • the distance 35 a from the plane 100 of the rectangular solid magnet 3 opposite to the Hall sensors 32 a and 32 b to the center of magnetism sensing section of the Hall sensors 32 a and 32 b is set to 0.8 mm.
  • the distance 35 b between the center of magnetism sensing section of the Hall sensor 32 a and the center of magnetism sensing section of the Hall sensor 32 b is set to 0.8 mm.
  • the present invention can provide a position detection apparatus that can detect a position in a wide range of about 10 mm with a precision of 0.1% to the position detection range.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Remote Sensing (AREA)
  • Environmental & Geological Engineering (AREA)
  • Electromagnetism (AREA)
  • Geology (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geophysics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130088218A1 (en) * 2011-10-10 2013-04-11 Methode Electronics, Inc. Contactless magnetic linear position sensor
US9018942B2 (en) 2013-01-11 2015-04-28 Bourns, Inc. Position measurement using a variable flux collector
US9772200B2 (en) 2013-03-15 2017-09-26 Bourns, Inc. Position measurement using angled collectors
US10365121B2 (en) 2015-02-06 2019-07-30 Apple Inc. Magnetic sensing for auto focus position detection
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Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US9558878B1 (en) * 2013-05-28 2017-01-31 The Board Of Trustees Of The University Of Alabama Multi-stage permanent magnet structure and integrated power inductors
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US9759578B2 (en) * 2015-03-12 2017-09-12 International Business Machines Corporation Sensor arrangement for position sensing
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EP3371552B1 (en) * 2015-11-02 2020-02-05 Honeywell International Inc. Differential hall magnet polarity detection for amr 360 degree sensors
US9797965B2 (en) 2016-01-15 2017-10-24 Lake Shore Cryotronics, Inc. Fast hall effect measurement system
US11874140B2 (en) * 2016-02-17 2024-01-16 Infineon Technologies Ag Tapered magnet
JP2018013391A (ja) 2016-07-20 2018-01-25 メレキシス テクノロジーズ エス エー 変位検出装置
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TWI654500B (zh) * 2017-03-22 2019-03-21 日商住友重機械工業股份有限公司 Position detecting device and position detecting method
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CN112781627A (zh) * 2020-06-23 2021-05-11 北京可利尔福科技有限公司 闭环反馈系统和电子器件
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KR102369889B1 (ko) * 2020-11-17 2022-03-02 국민대학교산학협력단 선형모터 내의 이동자 위치 추정 장치
EP4095491B1 (en) 2021-05-27 2023-06-28 Melexis Technologies SA Magnetic position sensor system, method and device with error detection
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Citations (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082507A (en) 1963-03-26 Magnetically responsive resistance device
JPS4832619A (zh) 1971-09-04 1973-05-01
US4195305A (en) 1978-09-25 1980-03-25 Varian Associates, Inc. Lattice constant grading in the Aly Ga1-y As1-x Sbx alloy system
JPS55132066A (en) 1979-04-02 1980-10-14 Matsushita Electronics Corp Hall effect semiconductor integrated circuit
JPS55132033A (en) 1979-04-02 1980-10-14 Japan Electronics Kk Machine foe foming lead wire of condenser and solid resistor or like
US4236165A (en) 1978-06-02 1980-11-25 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Planar semiconductor device
JPS596752A (ja) 1982-07-02 1984-01-13 Matsushita Electric Ind Co Ltd モ−ルドモ−タの製造方法
JPS5948970A (ja) 1982-09-13 1984-03-21 Pioneer Electronic Corp 磁電変換素子
JPS59159578A (ja) 1983-03-01 1984-09-10 Midori Sokki:Kk 無接触式ポテンシヨメ−タ
JPS59228759A (ja) 1983-06-09 1984-12-22 Seiko Instr & Electronics Ltd Ｍｏｓ型ホ−ル素子
US4668100A (en) 1985-09-03 1987-05-26 Citizen Watch Co., Ltd. Electronic equipment with geomagnetic direction sensor
JPS62174984A (ja) 1985-08-09 1987-07-31 Murata Mfg Co Ltd ホ−ル素子
US4690714A (en) 1979-01-29 1987-09-01 Li Chou H Method of making active solid state devices
JPS6355227A (ja) 1986-08-27 1988-03-09 浜口　昌久 安全トイレツト装置
US4782375A (en) 1983-12-19 1988-11-01 Lgz Landis & Gyr Zug Integratable hall element
JPS649302U (zh) 1987-07-07 1989-01-19
JPH02272782A (ja) 1989-04-14 1990-11-07 Murata Mfg Co Ltd ４相差動回転センサー
JPH03288483A (ja) 1990-04-04 1991-12-18 Asahi Chem Ind Co Ltd ＩｎＡｓホール効果素子
JPH04279071A (ja) 1991-03-07 1992-10-05 Murata Mfg Co Ltd ホール素子
US5184106A (en) 1991-01-28 1993-02-02 General Motors Corporation Magnetic field sensor with improved electron mobility
EP0548375A1 (en) 1991-07-16 1993-06-30 Asahi Kasei Kogyo Kabushiki Kaisha Semiconductor sensor and its manufacturing method
JPH05297084A (ja) 1992-04-15 1993-11-12 Toyota Motor Corp 地磁気センサ装置
JPH0677556A (ja) 1991-07-16 1994-03-18 Asahi Chem Ind Co Ltd 半導体センサおよびその製造方法
JPH06125122A (ja) 1992-10-09 1994-05-06 Nippon Autom Kk 磁気抵抗素子及びその取付基板並びに該磁気抵抗素子と取付基板を用いた磁気センサ
JPH06224488A (ja) 1993-01-25 1994-08-12 Mitsubishi Electric Corp 磁気抵抗素子
JPH06229708A (ja) 1993-02-05 1994-08-19 Hamamatsu Koden Kk 無接触式直線変位センサ
US5385864A (en) 1993-05-28 1995-01-31 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor thin film and a Hall-effect device
US5430310A (en) 1991-03-28 1995-07-04 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
JPH07193297A (ja) 1993-12-27 1995-07-28 Toshiba Corp ホール素子
JPH07249805A (ja) 1994-03-09 1995-09-26 Toshiba Corp ホール素子
JPH07283390A (ja) 1994-04-04 1995-10-27 Asahi Chem Ind Co Ltd オーミック電極
US5491461A (en) 1994-05-09 1996-02-13 General Motors Corporation Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
JPH0888423A (ja) 1994-09-19 1996-04-02 Asahi Chem Ind Co Ltd 磁気センサ
JPH08204251A (ja) 1995-01-24 1996-08-09 Asahi Chem Ind Co Ltd ＧａＡｓホール素子
JPH08242027A (ja) 1995-03-03 1996-09-17 Mitsubishi Electric Corp 磁気抵抗素子回路
JPH09116207A (ja) 1995-10-18 1997-05-02 Asahi Chem Ind Co Ltd ホール素子とその製造方法
JPH09203748A (ja) 1996-01-29 1997-08-05 Tokin Corp 半導体加速度センサ
JPH09219547A (ja) 1996-02-09 1997-08-19 Sony Corp 磁気抵抗素子
JPH09231889A (ja) 1996-02-26 1997-09-05 Matsushita Electric Works Ltd 位置検出センサ
EP0810544A2 (en) 1996-05-29 1997-12-03 Fujitsu Takamisawa Component Limited Pointing device for moving and positioning a pointer on a display of a computer
JPH1074308A (ja) 1996-08-30 1998-03-17 Hitachi Ltd 磁気スイッチング素子及びそれを用いた磁気センサと磁気記録再生装置
JPH10233539A (ja) 1991-07-16 1998-09-02 Asahi Chem Ind Co Ltd 化合物半導体を含む積層体およびその製造方法
WO1998038519A1 (fr) 1997-02-28 1998-09-03 Asahi Kasei Electronics Co., Ltd. Detecteur magnetique
US5804475A (en) 1994-11-14 1998-09-08 The United States Of America As Represented By The Secretary Of The Navy Method of forming an interband lateral resonant tunneling transistor
US5883564A (en) 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
JPH11183579A (ja) 1997-12-17 1999-07-09 Toshiba Corp ホール素子、及びホール素子を用いた検出装置
JP2000035469A (ja) 1998-07-17 2000-02-02 Toshiba Corp 半導体ホールセンサー
JP2000183424A (ja) 1998-12-15 2000-06-30 Hitachi Cable Ltd 化合物半導体多層薄膜及び半導体装置
US6100546A (en) 1994-04-07 2000-08-08 Sdl, Inc. III-V arsenide-nitride semiconductor
TW411654B (en) 1998-09-14 2000-11-11 Chen Hung Jou A magnetic induction device for coordinate judgement and method thereof
US6175233B1 (en) 1996-10-18 2001-01-16 Cts Corporation Two axis position sensor using sloped magnets to generate a variable magnetic field and hall effect sensors to detect the variable magnetic field
JP2001058109A (ja) 1999-08-24 2001-03-06 Komatsu Ltd 液体用フィルタ装置
JP2001111135A (ja) 1999-10-05 2001-04-20 Matsushita Electronics Industry Corp 半導体ホール素子
EP1124271A1 (en) 1998-08-07 2001-08-16 Asahi Kasei Kabushiki Kaisha Magnetic sensor and method for fabricating the same
JP2001352369A (ja) 2000-06-07 2001-12-21 Nec Saitama Ltd 折り畳み型携帯通信機
US20010055002A1 (en) 2000-06-27 2001-12-27 Fujitsu Takamisawa Component Limited Coordinates input apparatus
EP1211517A2 (en) 2000-12-04 2002-06-05 Evergreen Korea Corp. Apparatus and method for measuring hall effect
JP2002229090A (ja) 2001-02-07 2002-08-14 Matsushita Electric Ind Co Ltd 像ぶれ補正装置
JP2002243407A (ja) 2001-02-14 2002-08-28 Yaskawa Electric Corp 回転角度検出器およびその装置
JP2002287891A (ja) 2001-01-19 2002-10-04 Nagano Fujitsu Component Kk ポインティングデバイス、携帯型情報機器、信号処理方法及び回路基板製造方法
WO2002086694A1 (en) 2001-04-19 2002-10-31 Asahi Kasei Emd Corporation Pointing device
JP2003214897A (ja) 2001-11-19 2003-07-30 Nippon Soken Inc 変位量センサ
US6630882B1 (en) 1999-08-05 2003-10-07 Delphi Technologies, Inc. Composite magnetic sensor
JP2003315088A (ja) 2002-01-23 2003-11-06 Robert Bosch Gmbh 磁電変換素子を有する距離センサ
JP2004245765A (ja) 2003-02-17 2004-09-02 Nikon Corp 位置検出装置及びブレ補正装置
US6809514B2 (en) 2000-05-19 2004-10-26 Qinetiq Limited Magnetic field sensor including carrier excluding for reducing an instrinsic contribution to carrier concentration in the active region
JP2004348173A (ja) 2003-03-25 2004-12-09 Asahi Kasei Electronics Co Ltd 位置検出装置
WO2004113845A1 (ja) 2003-06-20 2004-12-29 Mikuni Corp. 非接触ポジションセンサ
US6861679B2 (en) 2002-10-29 2005-03-01 Matsushita Electric Industrial Co., Ltd. Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor
JP2005284169A (ja) 2004-03-30 2005-10-13 Konica Minolta Opto Inc 駆動装置及び光学機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682041B2 (ja) * 1987-07-01 1994-10-19 グラフテック株式会社 非接触変位検出器
US5543727A (en) * 1994-04-05 1996-08-06 Bellsouth Corporation Run-in test system for PC circuit board
JPH08240318A (ja) * 1995-03-03 1996-09-17 Aiwa Co Ltd 液面検出装置
JP2001091298A (ja) * 1999-09-21 2001-04-06 Sumitomo Metal Mining Co Ltd 非接触磁気式計測装置
JP4587708B2 (ja) * 2004-05-20 2010-11-24 コニカミノルタオプト株式会社 位置検出装置、手振れ補正機構、および撮像装置

Patent Citations (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082507A (en) 1963-03-26 Magnetically responsive resistance device
JPS4832619A (zh) 1971-09-04 1973-05-01
US4236165A (en) 1978-06-02 1980-11-25 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Planar semiconductor device
US4195305A (en) 1978-09-25 1980-03-25 Varian Associates, Inc. Lattice constant grading in the Aly Ga1-y As1-x Sbx alloy system
US4690714A (en) 1979-01-29 1987-09-01 Li Chou H Method of making active solid state devices
JPS55132066A (en) 1979-04-02 1980-10-14 Matsushita Electronics Corp Hall effect semiconductor integrated circuit
JPS55132033A (en) 1979-04-02 1980-10-14 Japan Electronics Kk Machine foe foming lead wire of condenser and solid resistor or like
JPS596752A (ja) 1982-07-02 1984-01-13 Matsushita Electric Ind Co Ltd モ−ルドモ−タの製造方法
JPS5948970A (ja) 1982-09-13 1984-03-21 Pioneer Electronic Corp 磁電変換素子
JPS59159578A (ja) 1983-03-01 1984-09-10 Midori Sokki:Kk 無接触式ポテンシヨメ−タ
JPS59228759A (ja) 1983-06-09 1984-12-22 Seiko Instr & Electronics Ltd Ｍｏｓ型ホ−ル素子
US4782375A (en) 1983-12-19 1988-11-01 Lgz Landis & Gyr Zug Integratable hall element
US4987467A (en) 1983-12-19 1991-01-22 Lgz Landis & Gyr Zug Ag Integratable hall element
JPS62174984A (ja) 1985-08-09 1987-07-31 Murata Mfg Co Ltd ホ−ル素子
US4668100A (en) 1985-09-03 1987-05-26 Citizen Watch Co., Ltd. Electronic equipment with geomagnetic direction sensor
JPS6355227A (ja) 1986-08-27 1988-03-09 浜口　昌久 安全トイレツト装置
JPS649302U (zh) 1987-07-07 1989-01-19
JPH02272782A (ja) 1989-04-14 1990-11-07 Murata Mfg Co Ltd ４相差動回転センサー
JPH03288483A (ja) 1990-04-04 1991-12-18 Asahi Chem Ind Co Ltd ＩｎＡｓホール効果素子
US5198795A (en) 1990-04-04 1993-03-30 Asahi Kasei Kogyo Kabushiki Kaisha Magnetoelectric transducer and process for producing the same
US5184106A (en) 1991-01-28 1993-02-02 General Motors Corporation Magnetic field sensor with improved electron mobility
JPH04279071A (ja) 1991-03-07 1992-10-05 Murata Mfg Co Ltd ホール素子
US5430310A (en) 1991-03-28 1995-07-04 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
US5453727A (en) 1991-07-16 1995-09-26 Asahi Kasai Kogyo Kabushiki Kaisha Semiconductor sensors and method for fabricating the same
EP0548375A1 (en) 1991-07-16 1993-06-30 Asahi Kasei Kogyo Kabushiki Kaisha Semiconductor sensor and its manufacturing method
JPH0677556A (ja) 1991-07-16 1994-03-18 Asahi Chem Ind Co Ltd 半導体センサおよびその製造方法
JP3069545B2 (ja) 1991-07-16 2000-07-24 旭化成工業株式会社 化合物半導体を含む積層体およびその製造方法
JP2793440B2 (ja) 1991-07-16 1998-09-03 旭化成工業株式会社 磁気センサおよびその製造方法
JPH10233539A (ja) 1991-07-16 1998-09-02 Asahi Chem Ind Co Ltd 化合物半導体を含む積層体およびその製造方法
JPH05297084A (ja) 1992-04-15 1993-11-12 Toyota Motor Corp 地磁気センサ装置
JPH06125122A (ja) 1992-10-09 1994-05-06 Nippon Autom Kk 磁気抵抗素子及びその取付基板並びに該磁気抵抗素子と取付基板を用いた磁気センサ
JPH06224488A (ja) 1993-01-25 1994-08-12 Mitsubishi Electric Corp 磁気抵抗素子
JPH06229708A (ja) 1993-02-05 1994-08-19 Hamamatsu Koden Kk 無接触式直線変位センサ
US5385864A (en) 1993-05-28 1995-01-31 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor thin film and a Hall-effect device
JPH07193297A (ja) 1993-12-27 1995-07-28 Toshiba Corp ホール素子
JPH07249805A (ja) 1994-03-09 1995-09-26 Toshiba Corp ホール素子
JPH07283390A (ja) 1994-04-04 1995-10-27 Asahi Chem Ind Co Ltd オーミック電極
US6100546A (en) 1994-04-07 2000-08-08 Sdl, Inc. III-V arsenide-nitride semiconductor
US5883564A (en) 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
US5491461A (en) 1994-05-09 1996-02-13 General Motors Corporation Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
JPH0888423A (ja) 1994-09-19 1996-04-02 Asahi Chem Ind Co Ltd 磁気センサ
US5804475A (en) 1994-11-14 1998-09-08 The United States Of America As Represented By The Secretary Of The Navy Method of forming an interband lateral resonant tunneling transistor
JPH08204251A (ja) 1995-01-24 1996-08-09 Asahi Chem Ind Co Ltd ＧａＡｓホール素子
US5621320A (en) 1995-03-03 1997-04-15 Mitsubishi Denki Kabushiki Kaisha Magnetoresistance type sensor device for detecting change of magnetic field
JPH08242027A (ja) 1995-03-03 1996-09-17 Mitsubishi Electric Corp 磁気抵抗素子回路
JPH09116207A (ja) 1995-10-18 1997-05-02 Asahi Chem Ind Co Ltd ホール素子とその製造方法
JPH09203748A (ja) 1996-01-29 1997-08-05 Tokin Corp 半導体加速度センサ
JPH09219547A (ja) 1996-02-09 1997-08-19 Sony Corp 磁気抵抗素子
JPH09231889A (ja) 1996-02-26 1997-09-05 Matsushita Electric Works Ltd 位置検出センサ
EP0810544A2 (en) 1996-05-29 1997-12-03 Fujitsu Takamisawa Component Limited Pointing device for moving and positioning a pointer on a display of a computer
JPH1074308A (ja) 1996-08-30 1998-03-17 Hitachi Ltd 磁気スイッチング素子及びそれを用いた磁気センサと磁気記録再生装置
US6175233B1 (en) 1996-10-18 2001-01-16 Cts Corporation Two axis position sensor using sloped magnets to generate a variable magnetic field and hall effect sensors to detect the variable magnetic field
WO1998038519A1 (fr) 1997-02-28 1998-09-03 Asahi Kasei Electronics Co., Ltd. Detecteur magnetique
JPH11183579A (ja) 1997-12-17 1999-07-09 Toshiba Corp ホール素子、及びホール素子を用いた検出装置
JP2000035469A (ja) 1998-07-17 2000-02-02 Toshiba Corp 半導体ホールセンサー
EP1124271A1 (en) 1998-08-07 2001-08-16 Asahi Kasei Kabushiki Kaisha Magnetic sensor and method for fabricating the same
US6590389B1 (en) 1998-08-07 2003-07-08 Asahi Kasei Kogyo Kabushiki Kaisha Magnetic sensor, magnetic sensor apparatus, semiconductor magnetic resistance apparatus, and production method thereof
TW411654B (en) 1998-09-14 2000-11-11 Chen Hung Jou A magnetic induction device for coordinate judgement and method thereof
JP2000183424A (ja) 1998-12-15 2000-06-30 Hitachi Cable Ltd 化合物半導体多層薄膜及び半導体装置
US6630882B1 (en) 1999-08-05 2003-10-07 Delphi Technologies, Inc. Composite magnetic sensor
JP2001058109A (ja) 1999-08-24 2001-03-06 Komatsu Ltd 液体用フィルタ装置
JP2001111135A (ja) 1999-10-05 2001-04-20 Matsushita Electronics Industry Corp 半導体ホール素子
US6809514B2 (en) 2000-05-19 2004-10-26 Qinetiq Limited Magnetic field sensor including carrier excluding for reducing an instrinsic contribution to carrier concentration in the active region
JP2001352369A (ja) 2000-06-07 2001-12-21 Nec Saitama Ltd 折り畳み型携帯通信機
US20020009192A1 (en) 2000-06-07 2002-01-24 Futoshi Nakamura Folding type portable communication device
US20010055002A1 (en) 2000-06-27 2001-12-27 Fujitsu Takamisawa Component Limited Coordinates input apparatus
EP1211517A2 (en) 2000-12-04 2002-06-05 Evergreen Korea Corp. Apparatus and method for measuring hall effect
JP2002287891A (ja) 2001-01-19 2002-10-04 Nagano Fujitsu Component Kk ポインティングデバイス、携帯型情報機器、信号処理方法及び回路基板製造方法
JP2002229090A (ja) 2001-02-07 2002-08-14 Matsushita Electric Ind Co Ltd 像ぶれ補正装置
JP2002243407A (ja) 2001-02-14 2002-08-28 Yaskawa Electric Corp 回転角度検出器およびその装置
WO2002086694A1 (en) 2001-04-19 2002-10-31 Asahi Kasei Emd Corporation Pointing device
JP2003214897A (ja) 2001-11-19 2003-07-30 Nippon Soken Inc 変位量センサ
JP2003315088A (ja) 2002-01-23 2003-11-06 Robert Bosch Gmbh 磁電変換素子を有する距離センサ
US6861679B2 (en) 2002-10-29 2005-03-01 Matsushita Electric Industrial Co., Ltd. Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor
JP2004245765A (ja) 2003-02-17 2004-09-02 Nikon Corp 位置検出装置及びブレ補正装置
JP2004348173A (ja) 2003-03-25 2004-12-09 Asahi Kasei Electronics Co Ltd 位置検出装置
WO2004113845A1 (ja) 2003-06-20 2004-12-29 Mikuni Corp. 非接触ポジションセンサ
JP2005284169A (ja) 2004-03-30 2005-10-13 Konica Minolta Opto Inc 駆動装置及び光学機器

Non-Patent Citations (11)

* Cited by examiner, † Cited by third party
Title
Advisory Action, USPTO, U.S. Appl. No. 10/491,276, mailed Jun. 15, 2006. (3 pages).
European Search Report and Communication for European Patent Application No. 07008331.6, dated Jul. 3, 2007. (11 pages).
European Supplementary Search Report for European Patent Application No. 03700583.2 dated Jun. 18, 2007. (7 pages).
N. Kuze et al., "Molecular beam epitaxial growth of InAs/AlGaAsSb deep quantum well structures on GaAs substrates,," J. Vac. Sci. Technol. B 16(5), Sep./Oct. 1998, American Vacuum Society, pp. 2644-2649.
Notice of Allowance, USPTO, U.S. Appl. No. 10/491,276, mailed Jan. 10, 2008. (6 pages).
Notice of Allowance, USPTO, U.S. Appl. No. 10/491,276, mailed Jul. 31, 2007. (6 pages).
Office Action dated Jan. 29, 2010 in corresponding Chinese Patent Application No. 2006-80047407.3.
Office Action, USPTO, U.S. Appl. No. 10/491,276, mailed Aug. 2, 2006. (9 pages).
Office Action, USPTO, U.S. Appl. No. 10/491,276, mailed Feb. 16, 2007. (9 pages).
Office Action, USPTO, U.S. Appl. No. 10/491,276, mailed Mar. 10, 2006. (8 pages).
Office Action, USPTO, U.S. Appl. No. 10/491,276, mailed Nov. 2, 2005. (7 pages).

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130088218A1 (en) * 2011-10-10 2013-04-11 Methode Electronics, Inc. Contactless magnetic linear position sensor
US9448087B2 (en) * 2011-10-10 2016-09-20 Methode Electronics, Inc. Contactless magnetic linear position sensor
US9018942B2 (en) 2013-01-11 2015-04-28 Bourns, Inc. Position measurement using a variable flux collector
US9772200B2 (en) 2013-03-15 2017-09-26 Bourns, Inc. Position measurement using angled collectors
US10365121B2 (en) 2015-02-06 2019-07-30 Apple Inc. Magnetic sensing for auto focus position detection
US10571299B2 (en) 2015-02-06 2020-02-25 Apple Inc. Magnetic sensing for auto focus position detection
EP4174445A4 (en) * 2020-07-20 2023-12-06 Metrol Co., Ltd. POSITION DETECTION DEVICE

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