US3082507A - Magnetically responsive resistance device - Google Patents
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- US3082507A US3082507A US3082507DA US3082507A US 3082507 A US3082507 A US 3082507A US 3082507D A US3082507D A US 3082507DA US 3082507 A US3082507 A US 3082507A
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- 239000000463 material Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000002194 amorphous carbon material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S310/00—Electrical generator or motor structure
- Y10S310/03—Hall effect generators and converters
Definitions
- Our invention relates to electric variable resistance devices which vary their resistance in dependence upon the effect of a magnetic field.
- the resistance body proper of such a device is located within a gap of an electromagnet or permanent magnet and, when in operation, is traversed by an electric current whose direction of flow extends transverse to the magnetic field or a component thereof.
- Suitable as material for the magnetically responsive resistance body in such devices are semiconductors,'preferably the semiconducting compounds of the type A B that is, compounds of an element A from the third group with an element B from the fifth group of the periodic system of elements.
- Such semiconducting compounds are, for instance, indium antimonide, indium arsenide, indium phosphide, gallium antimonide and gallium arsenide, the compounds indium arsenide and indium antirnonide being most advantageousbecause of their extremely high carrier mobility. Particularly great changes of electric resistance under the effect of a magnetic field have been observed with such compound materials.
- the devices When using such magnetically responsive resistors of the compound type for the production of Hall voltages, the devices have the further advantage that the Hall voltage output can be directly supplied to a current-consuming load without breakdown of the Hall voltage and hence without the necessity of using voltage pre-amplifiers for many purposes. I Because of this capability of supplying an appreciable Hallpower output, such devices are often referred to. as Hall I generators.
- the individual magnetically responsive resistance members above mentioned are formed from a single resistor structure by slitting it from opposite sides in the direction of the electric current flow to approximately the middle of the structure In this manner, a single coherent resistor body is provided which, as regards its functioning, is equivalent to a plurality of individual resistance members that are parallel connected in the current supply circuit but series connected with respect to the resulting Hall voltages.
- FIG. 1 shows a multiple-member resistor structure of a device according to the invention
- FIG. 2 illustrates an electric circuit diagram applicable with such a device
- FIG. 3 illustrates a modification of a multi-member resistor structure
- FIG. 4 shows a complete Hall generator embodying the features of FIGS. 1 and 2.
- the illustrated device comprises a magnetic field structure composed of a magnet core 20 joined with two pole pieces 21 and 22 whose respective pole faces are spaced from each other to form a gap in which a semiconducting resistor structure or Hall plate 1 of generally rectangular shape is disposed.
- the core is shown provided with a magnetizing coil 13 by means of which the field strength in the gap occupied by resistor structure 1 can be varied to thereby change the electric resistance between the terminals (4e and Se in FIG. 4) of the body.
- the resistor structure 1 consists preferably of indium antimonide or indium arsenide. Its design and an example of suitable circuit connections are apparent from FIGS. 1 and 2.
- the overall size of the rectangular structure 1 depends upon the resistance and power requirements. For example, the overall length may be 12 mm., the width 8 mm., and the thickness of the plate ile., wafer, corresponding to the thickness of the pole gap, may amount to 15 microns.
- the resistance body 1 is equipped with Hall electrodes 2 and 3 as well as with current supply terminals denoted by 4a to 4g and 5a to 5g.
- the body 1 originally forming a massive rectangle, is provided with slits 6 which extend from both sides in the current-flow direction to nearly the middle of the body and thus subdivide the body into a number of individual resistor members which are all series connected at their 7 respective midpoints relative to the Hall electrodes 2, 3.
- the magnetic-field responsive resistor in a magnetically responsive resistance device according to the invention, can be used as an amplifier because the controlling power supplied to the magnetic field, for instance in form of a variable excitation current passing through the coil 13, can be kept smaller than the power output taken from across the Hall electrodes 2 and 3.
- a Hall amplifier with a suitable circuit connection, can also be used as an oscillation generator.
- the controlling magnetic field Winding 13 and a capacitor 14 may be connected into the Hall-electrode circuit between the electrodes 2 and 3.
- the power output of the device may be taken from across the same electrodes 2 and 3.
- the mass resistors 8a to tie and 9a to 9c are directly attached to the current supply electrodes of the individual component members of the magnetically responsive resistor body 1.
- the ends of the mass resistors that face away from the body 1 may all be interconnected by a single conducting terminal layer 11 or 12 that extends over all individual resistor members located at the same side of body 1.
- the conducting layers 12 and 13 serve preferably as a connecting terminal for the current supply leads coming from terminals 7:; and 7b.
- the mass resistors consist preferably of amorphous carbon material, for instance graphite.
- the Hall electrodes 2, 3 as well as the terminals 4a to 4g, a to 5g as well as the connecting conductor layers 11, 12 may consist of copper or silver.
- a rectangular resistance body of magnetically responsive material such as indium arsenide or indium antimonide, is first provided at both narrow sides with respective extensions consisting of a mass of high-ohmic resistance material, preferably graphite.
- the resistance mass having the same width and thickness as the semiconductor body, thus forms marginal extensions along the two short sides of the rectangular shape.
- the composite rectangular body is slitted from both sides toward the middle, thus simultaneously producing the individiual current-carrying members as well as the high-ohmic resistors connected therewith.
- the ends of the high-ohmic resistors facing away from the magnetically responsive resistance body are subsequently covered with a conducting layer which extends over all resistor bodies on the same side of the assembly, as shown in FIG. 3, and which may serve as a connecting terminal common to all individual current paths. 7
- ohmic resistance means and high-ohmic resistors signify that said means or resistors have a higher resistance than the semiconductor plate.
- the method of producing a magnetic-field responsive semiconductor device having opposite current terminal ends comprises the steps of joining a high-ohmic resistance material with a water of magnetic-field responsive semiconductor material on the two opposite current terminal end-s of the wafer, thereafter slitting the highohmic material and the wafer from said two ends toward but not across a middle portion of the wafer, whereby a group of parallel partial wafer members is produced, and then depositing on each of said two ends an electroconductive layer onto the high-ohmic material on said ends of all of said members and across the slits.
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Description
March 26, 1963 F. KUHRT ETAL MAGNETICALLY RESPONSIVE RESISTANCE DEVICE, PARTICULARLY HALL GENERATOR Filed NOV. 20, 1956 United States Patent Ofifice 3,082,507 Patented Mar. 26, 1963 3,082 507 MAGNETICALLY RESPbNSIVE RESISTANCE DEVICE, PARTICULARLY HALL GENER- ATO Friedrich Kuhrt and Karl Maaz, Numberg, Germany,
assignors to Siemens-Schuckertwerke Aktiengesellschaft, Berlin-Siemensstadt and Erlangen, Germany, a corporation of Germany Filed Nov. 20, 1956, Ser. No. 623,415 Claims priority, application Germany Jan. 7, 1956 1 Claim. (Cl. 29155.5)
Our invention relates to electric variable resistance devices which vary their resistance in dependence upon the effect of a magnetic field. The resistance body proper of such a device is located within a gap of an electromagnet or permanent magnet and, when in operation, is traversed by an electric current whose direction of flow extends transverse to the magnetic field or a component thereof.
Suitable as material for the magnetically responsive resistance body in such devices are semiconductors,'preferably the semiconducting compounds of the type A B that is, compounds of an element A from the third group with an element B from the fifth group of the periodic system of elements. Such semiconducting compounds are, for instance, indium antimonide, indium arsenide, indium phosphide, gallium antimonide and gallium arsenide, the compounds indium arsenide and indium antirnonide being most advantageousbecause of their extremely high carrier mobility. Particularly great changes of electric resistance under the effect of a magnetic field have been observed with such compound materials. When using such magnetically responsive resistors of the compound type for the production of Hall voltages, the devices have the further advantage that the Hall voltage output can be directly supplied to a current-consuming load without breakdown of the Hall voltage and hence without the necessity of using voltage pre-amplifiers for many purposes. I Because of this capability of supplying an appreciable Hallpower output, such devices are often referred to. as Hall I generators.
It has been found, however, that when such magnetically responsive resistance devices, particularly Hall generators, are operated with alternating or periodic electric currents or magnetic fields, the performance may leave much to be desired and involves undesired losses if the current or field frequency is relatively high. Similar phenomena, although to a lesser extent, have been observed with the usual powerline frequencies of 50 or 60 c.p.s.
It is an object of our invention to minimize such deficiencies and to reduce the losses encountered when operating at higher frequencies.
We have found that the losses and disturbances are essentially due to the occurrence of eddy currents within the magnet-field responsive resistance body and that these phenomena are greatly reduced or virtually eliminated by providing a plurality of elongated resistance members of small width relative to their length, locating these members side-by-side in the air gap of the magnetic field structure, and interposing preferably high-ohmic resistors between the current supply terminals, formed on the opposite ends of the elongated members, and the leads that supply current to said terminals. We further electrically connect these resistance members in parallel relation to each other with respect to the flow of controlling current, and also interconnect the members in series relation to each other with respect to the Hall potentials of the individual members.
According to another feature of the invention the individual magnetically responsive resistance members above mentioned are formed from a single resistor structure by slitting it from opposite sides in the direction of the electric current flow to approximately the middle of the structure In this manner, a single coherent resistor body is provided which, as regards its functioning, is equivalent to a plurality of individual resistance members that are parallel connected in the current supply circuit but series connected with respect to the resulting Hall voltages.
The foregoing and other objects and features of our invention will be apparent from the embodiment described in the following and illustrated on the drawing in which:
FIG. 1 shows a multiple-member resistor structure of a device according to the invention;
FIG. 2, illustrates an electric circuit diagram applicable with such a device; I 7
FIG. 3 illustrates a modification of a multi-member resistor structure, and
FIG. 4 shows a complete Hall generator embodying the features of FIGS. 1 and 2.
Referring first to FIG. 4, the illustrated device comprises a magnetic field structure composed of a magnet core 20 joined with two pole pieces 21 and 22 whose respective pole faces are spaced from each other to form a gap in which a semiconducting resistor structure or Hall plate 1 of generally rectangular shape is disposed. The core is shown provided with a magnetizing coil 13 by means of which the field strength in the gap occupied by resistor structure 1 can be varied to thereby change the electric resistance between the terminals (4e and Se in FIG. 4) of the body. As explained, the resistor structure 1 consists preferably of indium antimonide or indium arsenide. Its design and an example of suitable circuit connections are apparent from FIGS. 1 and 2. The overall size of the rectangular structure 1 depends upon the resistance and power requirements. For example, the overall length may be 12 mm., the width 8 mm., and the thickness of the plate ile., wafer, corresponding to the thickness of the pole gap, may amount to 15 microns.
As apparent from FIG. 1, the resistance body 1 is equipped with Hall electrodes 2 and 3 as well as with current supply terminals denoted by 4a to 4g and 5a to 5g. The body 1, originally forming a massive rectangle, is provided with slits 6 which extend from both sides in the current-flow direction to nearly the middle of the body and thus subdivide the body into a number of individual resistor members which are all series connected at their 7 respective midpoints relative to the Hall electrodes 2, 3.
The subdivision of the rectangular shape has the effect of reducing the Width of each component Hall member so that the power losses are also reduced to a considerable extent.
In order to prevent eddy currents from finding a closed, low-resistance circuit extending through the current supply leads and the Hall-voltage connections of the component Hall members, it is necessary to connect the current-supply terminals 41: to 4g and 5a to 5g with the current-supply leads through resistors, preferably highohmic resistors interposed, between the electrodes and the leads. Such a connection is illustrated in FIG. 2. The controlling current, passing from the supply terminals 7a and 712 through the Hall plate structure, is supplied to the individual terminals 4a to 4e and 5a to Sc through respective high-ohmic resistors 8a to 82 and 9a to 9e.
In a magnetically responsive resistance device according to the invention, the eddy current losses are so extremely slight that the magnetic-field responsive resistor, according to another feature of the invention, can be used as an amplifier because the controlling power supplied to the magnetic field, for instance in form of a variable excitation current passing through the coil 13, can be kept smaller than the power output taken from across the Hall electrodes 2 and 3. Such a Hall amplifier, with a suitable circuit connection, can also be used as an oscillation generator. For this purpose, and as shown in FIG. 2, the controlling magnetic field Winding 13 and a capacitor 14 may be connected into the Hall-electrode circuit between the electrodes 2 and 3. The power output of the device may be taken from across the same electrodes 2 and 3. However, it is also possible to use as the variable output magnitude the voltage across the winding 13 or across the capacitor 14.
In some cases, according to still another feature of our invention, it is preferable to use'high-ohmic resistors 8a to tie and 9a to 9c in form of granular-mass resistors and to connect them directly with the current supply terminals of the magnetically responsive resistor members. The embodiment illustrated in FIG. 3 is of this type. The mass resistors 18a to 18e and 19a to 19c are directly attached to the current supply electrodes of the individual component members of the magnetically responsive resistor body 1. The ends of the mass resistors that face away from the body 1 may all be interconnected by a single conducting terminal layer 11 or 12 that extends over all individual resistor members located at the same side of body 1. The conducting layers 12 and 13 serve preferably as a connecting terminal for the current supply leads coming from terminals 7:; and 7b. The mass resistors consist preferably of amorphous carbon material, for instance graphite.
The Hall electrodes 2, 3 as well as the terminals 4a to 4g, a to 5g as well as the connecting conductor layers 11, 12 may consist of copper or silver.
The following method has been found advantageous for the manufacture of the magnetic-field responsive resistance device shown in FIG. 3. A rectangular resistance body of magnetically responsive material, such as indium arsenide or indium antimonide, is first provided at both narrow sides with respective extensions consisting of a mass of high-ohmic resistance material, preferably graphite. The resistance mass, having the same width and thickness as the semiconductor body, thus forms marginal extensions along the two short sides of the rectangular shape. Thereafter, the composite rectangular body is slitted from both sides toward the middle, thus simultaneously producing the individiual current-carrying members as well as the high-ohmic resistors connected therewith. The ends of the high-ohmic resistors facing away from the magnetically responsive resistance body are subsequently covered with a conducting layer which extends over all resistor bodies on the same side of the assembly, as shown in FIG. 3, and which may serve as a connecting terminal common to all individual current paths. 7
By virtue of the invention the eddy current losses of magnetic field-responsive resistance devices are reduced to such a great extent as to become negligible for most purposes; and it will be obvious to those skilled in the art that the invention is not limited to the particular embodiments herein described but will produce similar advantages when modified as regards the shape of the resistor assembly and/or the electric circuit connections of the device.
It is understood that the terms ohmic resistance means and high-ohmic resistors signify that said means or resistors have a higher resistance than the semiconductor plate.
We claim:
The method of producing a magnetic-field responsive semiconductor device having opposite current terminal ends, which comprises the steps of joining a high-ohmic resistance material with a water of magnetic-field responsive semiconductor material on the two opposite current terminal end-s of the wafer, thereafter slitting the highohmic material and the wafer from said two ends toward but not across a middle portion of the wafer, whereby a group of parallel partial wafer members is produced, and then depositing on each of said two ends an electroconductive layer onto the high-ohmic material on said ends of all of said members and across the slits.
References Cited in the file of this patent UNITED STATES PATENTS 1,778,795 Craig Oct. 21, 1930 1,778,796 Craig Oct; 21, 1930 2,464,807 Hansen Mar. 22, '1949 2,752,434 Dunlap June 26, 1956 2,835,866 Vradenburgh et a1 May 20, 1958
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3149407A (en) * | 1962-12-03 | 1964-09-22 | Ampex | Method for manufacturing a hall effect readout device |
US3197651A (en) * | 1965-07-27 | Hall effect device having anisotropic lead conductors | ||
US3267405A (en) * | 1962-07-31 | 1966-08-16 | Siemens Ag | Galvanomagnetic semiconductor devices |
US3329833A (en) * | 1967-07-04 | Hall effect transducer for scanning magnetic scale indicia | ||
US3789311A (en) * | 1971-09-13 | 1974-01-29 | Denki Onkyo Co Ltd | Hall effect device |
US3943570A (en) * | 1973-09-28 | 1976-03-09 | Hitachi, Ltd. | Semiconductor magnetic head |
US4182213A (en) * | 1978-05-03 | 1980-01-08 | Iodice Robert M | Coil less magnetic pickup for stringed instrument |
US20040251507A1 (en) * | 2001-10-01 | 2004-12-16 | Masahiro Nakamura | Hall device and magnetic sensor |
DE102007003565A1 (en) | 2007-01-24 | 2008-07-31 | Forschungszentrum Jülich GmbH | Device for reducing the synchronization of neuronal brain activity and suitable coil |
US20090045807A1 (en) * | 2005-12-16 | 2009-02-19 | Asahi Kasei Emd Corporation | Position detection apparatus |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1778796A (en) * | 1926-07-09 | 1930-10-21 | Craig Palmer Hunt | System and apparatus employing the hall effect |
US1778795A (en) * | 1927-08-12 | 1930-10-21 | Palmer H Craig | Electrical measuring instrument |
US2464807A (en) * | 1947-08-16 | 1949-03-22 | Gen Electric | Hall effect converter |
US2752434A (en) * | 1949-10-19 | 1956-06-26 | Gen Electric | Magneto-responsive device |
US2835866A (en) * | 1954-06-10 | 1958-05-20 | Ward Leonard Electric Co | Variable transformer |
-
0
- US US3082507D patent/US3082507A/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1778796A (en) * | 1926-07-09 | 1930-10-21 | Craig Palmer Hunt | System and apparatus employing the hall effect |
US1778795A (en) * | 1927-08-12 | 1930-10-21 | Palmer H Craig | Electrical measuring instrument |
US2464807A (en) * | 1947-08-16 | 1949-03-22 | Gen Electric | Hall effect converter |
US2752434A (en) * | 1949-10-19 | 1956-06-26 | Gen Electric | Magneto-responsive device |
US2835866A (en) * | 1954-06-10 | 1958-05-20 | Ward Leonard Electric Co | Variable transformer |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3197651A (en) * | 1965-07-27 | Hall effect device having anisotropic lead conductors | ||
US3329833A (en) * | 1967-07-04 | Hall effect transducer for scanning magnetic scale indicia | ||
US3267405A (en) * | 1962-07-31 | 1966-08-16 | Siemens Ag | Galvanomagnetic semiconductor devices |
US3149407A (en) * | 1962-12-03 | 1964-09-22 | Ampex | Method for manufacturing a hall effect readout device |
US3789311A (en) * | 1971-09-13 | 1974-01-29 | Denki Onkyo Co Ltd | Hall effect device |
US3943570A (en) * | 1973-09-28 | 1976-03-09 | Hitachi, Ltd. | Semiconductor magnetic head |
US4182213A (en) * | 1978-05-03 | 1980-01-08 | Iodice Robert M | Coil less magnetic pickup for stringed instrument |
US20040251507A1 (en) * | 2001-10-01 | 2004-12-16 | Masahiro Nakamura | Hall device and magnetic sensor |
CN100367526C (en) * | 2001-10-01 | 2008-02-06 | 旭化成电子材料元件株式会社 | Hall device and magnetic sensor |
US7372119B2 (en) * | 2001-10-01 | 2008-05-13 | Asahi Kasei Microsystems Co., Ltd. | Cross-shaped Hall device having extensions with slits |
US20090045807A1 (en) * | 2005-12-16 | 2009-02-19 | Asahi Kasei Emd Corporation | Position detection apparatus |
US7843190B2 (en) | 2005-12-16 | 2010-11-30 | Asahi Kasei Emd Corporation | Position detection apparatus |
DE102007003565A1 (en) | 2007-01-24 | 2008-07-31 | Forschungszentrum Jülich GmbH | Device for reducing the synchronization of neuronal brain activity and suitable coil |
DE102007003565B4 (en) * | 2007-01-24 | 2012-05-24 | Forschungszentrum Jülich GmbH | Device for reducing the synchronization of neuronal brain activity and suitable coil |
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