TWI545299B - 熱處理裝置 - Google Patents

熱處理裝置 Download PDF

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TWI545299B
TWI545299B TW102139129A TW102139129A TWI545299B TW I545299 B TWI545299 B TW I545299B TW 102139129 A TW102139129 A TW 102139129A TW 102139129 A TW102139129 A TW 102139129A TW I545299 B TWI545299 B TW I545299B
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quartz
reaction tube
cover body
heat treatment
support ring
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TW201428224A (zh
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金子裕史
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東京威力科創股份有限公司
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)

Description

熱處理裝置 【相關申請案的交互參照】
本發明係基於2012年10月31日提出申請之日本專利申請案第2012-240639號主張優先權，該日本申請案的內容，全部作為參照文獻而涉及於本發明。
本發明係關於熱處理裝置。
在半導體裝置的製造，有對於被處理體例如半導體晶圓，施行例如氧化、擴散、CVD(chemical vapor deposition，化學汽相沈積)、退火等各種的熱處理之步驟，使為實行這些步驟用之熱處理裝置的一種，使用有縱型熱處理裝置，其可以一次對於複數枚的晶圓進行熱處理。
一般而言，習知的縱型熱處理裝置具備熱處理爐之反應管，以及可升降地設置以開閉反應管的爐口之蓋體，並藉由此蓋體密閉反應管的爐口。
反應管一般係由石英製成，而蓋體係由金屬製成。然後，在藉由金屬製的蓋體密閉石英製的反應管時，將抵接反應管之O型環突出蓋體上而設置，並在反應管與蓋體之間形成間隙，此係吾人所知悉的構造。
或是，蓋體係由位在反應管側之石英製的內側蓋部，及支持內側蓋部 之金屬製的外側蓋部所構成，在藉由石英製的內側蓋部密閉石英製的反應管時，將抵接反應管之O型環設置於石英製的內側蓋部，同時，抵接著反應管與蓋體，此亦為吾人所知悉的構造。
習知之縱型熱處理裝置差，如上述般藉由蓋體密閉反應管的爐口時，能藉由蓋體密閉著反應管的底凸緣。
然而，由於反應管及蓋體之中，至少反應管為石英製成，故在蓋體抵接於反應管的底凸緣時，伴隨著經年變化在抵接時石英粉產生，而有導致此石英粉進入反應管內之情事。
又，若為了不使反應管與蓋體抵接而在反應管與蓋體之間設置間隙，會有由於淨化氣體等腐蝕性氣體進入，而使金屬製部件腐蝕的問題。又，即便為了不使腐蝕性氣體進入間隙而設置非活性氣體供給部，藉由於密封元件的受力變型量之調整失誤等而無法確保十足的間隙之場合，會引起腐蝕性氣體的逆擴散，而有使金屬製部件腐蝕之虞。
本發明有鑑於上述情事，提供一種熱處理裝置，其在藉由蓋體密閉反應管的爐口時，可以確實防止反應管與蓋體直接抵接，且，不會使密封元件損傷。
本發明為一種熱處理裝置，包含：圓筒狀之石英製反應管，其下方具有爐口並具有底凸緣；凸緣保持構件，用以保持該反應管之該底凸緣；以及蓋體，其具有金屬製蓋體，及由金屬製蓋體支持而密閉反應管的爐口之石英製蓋體；該石英製蓋體，係藉由支持環固定至該金屬製蓋體，該支持環抵接於凸緣保持構件的底面，在該石英製蓋體與該底凸緣之間形成間 隙；在該底凸緣與該石英製蓋體之間的該間隙的半徑方向外側，設有密封元件。
1‧‧‧熱處理裝置
10‧‧‧排氣口
12‧‧‧作業區域
13‧‧‧升降機構
14‧‧‧緩衝機構
15‧‧‧保持板
16‧‧‧晶舟
17‧‧‧晶舟本體
18‧‧‧腳部
19‧‧‧下方凸緣部
2‧‧‧熱處理爐
22‧‧‧底板
23‧‧‧頂蓋
24‧‧‧支柱
25‧‧‧溝部
26‧‧‧旋轉機構
27‧‧‧旋轉軸部
28‧‧‧殼體
3‧‧‧爐口
34‧‧‧軸孔部
4‧‧‧反應管
4a‧‧‧底凸緣
5‧‧‧蓋體
5B‧‧‧石英製蓋體
5C‧‧‧金屬製蓋體
6‧‧‧加熱器
62‧‧‧爐口加熱機構
64‧‧‧支柱
65‧‧‧發熱電阻體
66‧‧‧遮熱板
67‧‧‧貫通穴
68‧‧‧導通管
7‧‧‧凸緣保持構件
70‧‧‧支持環
70a‧‧‧冷卻水路
71,72‧‧‧組裝螺釘
73‧‧‧緩衝材
75‧‧‧覆蓋環
76‧‧‧圓周溝
77‧‧‧密封元件
78‧‧‧圓周突起
8‧‧‧底板
80‧‧‧環狀凹部
81‧‧‧凸緣部
83‧‧‧保持溝
9‧‧‧氣體導入管
G‧‧‧間隙
W‧‧‧晶圓
附屬於本說明書而形成其一部分之附加圖面，係表示本發明之實施態樣，在上述之一般的說明以及下述之實施態樣的詳細說明中，均可在說明本發明的原理上發揮效用。
【圖1】圖1為表示本發明之實施態樣的熱處理裝置之縱剖面圖。
【圖2】圖2為表示藉由凸緣保持構件而受到保持之反應管的底凸緣之一例的放大剖面圖。
【圖3】圖3為表示藉由凸緣保持構件而受到保持之反應管的底凸緣之另一例的放大剖面圖。
詳細地參照各種實施態樣，於附加圖面中舉例證實這些實施例。為期徹底理解本發明，雖然於以下的記載中，進行含概多數的細節之詳細的說明，但是即使不將這些細節原本的使用亦可能實施本發明，係對於所屬技術領域中具通常知識者非常明顯的。又，關於眾所皆知的方法、程序、系統、以及組成，為避免造成徒增難以理解各種實施態樣，不進行詳細的說明。
以下，基於圖1至圖3詳述依本發明之實施態樣的熱處理裝置。
圖1中，依本發明之實施態樣的熱處理裝置1為縱型熱處理裝置，其具備縱型的熱處理爐2，用以收容被處理體例如半導體晶圓W而施行既定 的處理例如氧化處理，此熱處理爐2，包含：縱長的處理容器例如石英製之圓筒狀反應管4，其下部作為爐口3形成開口；可升降的圓形狀之蓋體5，用以開閉此反應管4的爐口3；及加熱器6，設置於該反應管4的周圍，包含發熱電阻體，該熱電阻體可將反應管4內加熱控制到既定的溫度例如300~1200℃。
反應管4係由單重管構成。在該反應管4的下端部，形成向外的凸緣(底凸緣)4a，該底凸緣4a係經由凸緣保持構件7保持於底板8的下部。此時，反應管4貫通底板8的下方，又，底板8上設置有該加熱器6。
在反應管4的底凸緣4a設置有複數之氣體導入管9，用以在反應管4內導入處理氣體或吹掃用的非活性氣體。在此，說明的方便上，該複數之氣體導入管9僅以一個表示。在這些氣體導入管9，連接有氣體供給系統(未經圖示)的配管。又，反應管4的頂部逐漸縮徑，在此頂部形成排氣口10，在此排氣口10，連接有排氣系統的配管(圖示省略)，該排氣系統的配管，具有能減壓控制反應管4內之真空泵或是壓力控制閥。又，底板8及凸緣保持構件7，均為金屬製，例如為SUS(不銹鋼)製，其中藉由凸緣保持構件7保持反應管4的底凸緣4a。
熱處理爐2的下方，將配置於蓋體5上之後述的熱處理用晶舟16(以下，單單稱為「晶舟」)送入(裝載)於反應管4內，或從反應管4送出(卸載)，或是成為進行對於晶舟16之晶圓W之移載用作業區域(裝載區域)12。在該作業區域12，為進行晶舟16的送入、送出，設置有使蓋體5升降用之升降機構13。
蓋體5，包含：例如SUS製的金屬製蓋體5C、及藉由金屬製蓋體5C支持而密閉反應管4的爐口3之石英製蓋體5B。具有金屬製蓋體5C及石英製蓋體5B的蓋體5，係整體經由複數之緩衝機構14保持在保持板15上。在此，為了說明上的方便，該複數之緩衝機構14係只以一個表示。該保持板15係連結於該升降機構13。然後，蓋體5之石英製蓋體5B係密閉爐口 3。在蓋體5的下部中央部，設置有旋轉機構26，其具有旋轉晶舟16用之旋轉軸部27。
又，關於藉反應管4的爐口3藉由蓋體5密閉之構造將於後述。
又，晶舟16，係由例如石英製的晶舟所構成，其包含：晶舟本體17，其將大口徑例如直徑300mm的複數例如75~100片左右的晶圓W，以水平狀態於上下方向隔著間隔而多段地支持；以及單足的腳部18，用以支持該晶舟本體17；上述晶舟本體17及腳部18係一體地形成。然後，晶舟16之單足的腳部18，係連結著使晶圓W於周向旋轉用之旋轉軸部27。
該晶舟本體17，係在底板22與頂蓋23之間插設複數之支柱24而成，支柱24與底板22以及頂蓋23係藉由例如溶接等而一體地接合。支柱24，在周向以既定的間隔配置，以包圍晶圓W。圖1之晶舟16中，沒設置支柱24之左側形成開口，用以藉由未圖示之移載機構進行晶圓W的出入。在各個支柱24形成溝部25，用以多段地保持複數之晶圓W。腳部18成為既定之徑度，例如外徑30~50mm左右，以及既定之高度，例如包含下方凸緣部19的高度為250~350mm左右。
旋轉機構26，如上述般，具有旋轉軸部27、及筒狀之殼體28，該殼體28係一體地設置於蓋體5之下部中央部，並可旋轉地支持旋轉軸部27。在該殼體28的下側外周，於旋轉機構26的軸心部，可旋轉地設置一體地具有旋轉軸的有底筒狀之旋轉筒體(未經圖示)，從旋轉筒體的底部中央豎立了的旋轉軸，係經由封止機構例如O型環或是磁性流體封件氣密地貫通著殼體28內。
在旋轉筒體經由傳動帶連結旋轉驅動機構亦即馬達(圖示省略)，藉此以旋轉驅動旋轉軸。在蓋體5之石英製蓋體5B的中央部，形成貫通旋轉軸部27之軸孔部34。
又，如圖1所示，在蓋體5的石英製蓋體5B上，固定有爐口保溫機構亦即爐口加熱機構62。該爐口加熱機構62，主要由以下構件構成：複數之支柱64，在石英製蓋體5B的頂面上於周向以一定間隔設立；板狀之發熱電阻體65，在這些支柱64的上端部，水平地跨架設置；以及複數例如2片之遮熱板66，在該發熱電阻體65的下方以適當間隔於支柱64跨架設置。
支柱64及遮熱板66，例如係由石英製成。在發熱電阻體65及遮熱板66，設置有由腳部18貫通之貫通穴67，該腳部18包含晶舟16的下方凸緣部19。又，在從保持板15氣密地貫通了蓋體5的狀態下，設置有導通管68，該導通管68係用以導通向該發熱電阻體65供電的電纜。
接著，參照圖1至圖3，針對藉由蓋體5密閉反應管4的爐口3之構造加以說明。
如上所述，蓋體5包含：金屬製蓋體5C、及石英製蓋體5B，其由金屬製蓋體5C支持，而密閉反應管4的爐口3。
又，針對構成蓋體5之石英製蓋體5B及金屬製蓋體5C的組裝構造加以說明。
在石英製蓋體5B的外周上部(外周上半部)，形成比反應管4的下形成開口端外周部更向內側凹陷之環狀凹部80，且在石英製蓋體5B的外周下部(外周下半部)，形成有凸緣部81。在金屬製蓋體5C設置金屬製的支持環70，該支持環70位在該環狀凹部80而保持石英製蓋體5B的凸緣部81，在該支持環70的上部，設置有接觸該反應管4的下形成開口端底面之密封元件77。又，在該支持環70的內部，設置冷卻密封元件77之冷媒通路(例如，冷卻水路70a)，可以藉由流通冷卻水路70a的流水，有效地冷卻密封元件77。
支持環70，縱剖面係呈略逆L字狀(具有垂直部及水平部)，並形成有 環狀(ring狀)以覆蓋(圍繞)凸緣部81。該支持環70，在保持了凸緣部81的狀態下，藉由複數之組裝螺釘71自由脫著地組裝固定金屬製蓋體5C上。在支持環70上的覆蓋環75，環狀地形成有保持密封元件77之保持溝83。依本實施態樣之縱型熱處理裝置，可以解決蓋體5之腐蝕的問題，同時，可以試圖提高密封元件77之耐久性。
一實施態樣中，裝著於支持環70之組裝螺釘71，係沿著圓周向而複數設置，並貫通支持環70及金屬製蓋體5C而裝著著。然後，支持環70將石英製蓋體5B從外周側對於金屬製蓋體5C抵緊(參照圖2)。又，另一實施態樣中之組裝螺釘72停止於支持環70內，而未達至金屬製蓋體5C(參照圖3)。
又，在藉由蓋體5密閉了反應管4的爐口3時，支持環70經由設置於組裝螺釘71(或72)的上部之聚醯亞胺的緩衝材73抵接凸緣保持構件7的底面，並在石英製蓋體5B與反應管4的底凸緣4a之間形成間隙G。
又，密封元件77的縱剖面係呈略Q字形狀，並以支持環70上的覆蓋環75抵緊其突出部分而固定著。覆蓋環75係由組裝螺釘71(或72)固定於支持環70。
更在該石英製蓋體5B的頂面，於密封元件77的半徑方向內側設有圓周溝76，該圓周溝76用以將從石英製蓋體5B的中央部沿著該石英製蓋體5B的頂面朝半徑方向外側移行之熱予以遮斷。
又，在石英製蓋體5B的頂面，於圓周溝76的半徑方向外側，形成圓周突起78，該石英製蓋體5B與反應管4的底凸緣4a之間的間隙G，係立於該圓周突起78上。
又，對於設置在石英製蓋體5B上的密封元件77，雖然反應管4內的熱沿著石英製蓋體5B頂面而移行，也加熱密封元件77，但藉由在石英製 蓋體5B設有圓周溝76，可以防範熱從石英製蓋體5B的中央部向密封元件77側移行於未然。又，藉由在支持環70的冷卻水路70a內流動冷卻水，可以更為確實成防止密封元件77之加熱。
接著，就藉由依上述構成之本實施態樣的熱處理裝置的作用加以說明。
首先，於作業區域12內，移載晶圓W至配置於蓋體5上的晶舟16內。移載了晶圓W至晶舟16內後，蓋體5藉由升降機構13上升，接著，蓋體5抵接於爐口3的下形成開口端，而密閉爐口3。
這段期間，藉由馬達旋轉驅動旋轉筒體，而伴隨旋轉筒體的旋轉，旋轉軸部27會旋轉，且晶舟16會慢慢地轉動。
以蓋體5密閉爐口3時，裝著於支持環70之緩衝材73抵接於凸緣保持構件7的底面，並在石英製蓋體5B的圓周突起78與反應管4的底凸緣4a之間形成間隙G。
因此，藉由蓋體5密閉反應管4的爐口3時，石英製蓋體5B與石英製的底凸緣4a亦不會直接抵接，故可以防範在石英製蓋體5B與石英製之底凸緣4a抵接時產生石英粉的發生於未然。
又，由於藉由設置於圓周突起78的半徑方向外側之密封元件77，封止反應管4內的處理氣體，故不會向外側流出。又，即便流動腐蝕性強的淨化氣體時，亦不會腐蝕支持環70。進而，由於設定為密封元件77的縱剖面呈略Q字形狀而以覆蓋環75固定突出部分之構造，故可以使其位於石英製蓋體5B亦即熱影響小的區域的外側，同時，在使蓋體5升降時，密封元件77安定而貼附於底凸緣4a，不會從密封元件77脫落。
晶圓W之熱處理期間，雖然反應管4內的熱傳至石英製蓋體5B的表面，而從半徑方向中央部向半徑方向外側移行，但由於在石英製蓋體5B， 於對向反應管4的底凸緣4a之圓周突起78的半徑方向內側，設置有圓周溝76，故可以防止反應管4內的熱向密封元件77側移行。又，藉由在支持環70的冷卻水路70a內流動冷卻水，可防止密封元件77由於加熱而劣化於未然。
依如上述本實施態樣，在藉由蓋體5密閉反應管4的爐口3時，可以防止石英製蓋體5B與石英製之反應管4的底凸緣4a直接抵接，且不會有由於石英製蓋體5與底凸緣4a抵接而導致石英粉產生之情事。進而，如前述般，藉由在石英製蓋體5B的表面設置圓周溝76的同時，於支持環70的冷卻水路70a內流動冷卻水，可以防止密封元件77加熱而劣化於未然。
如以上般，依本發明，由於支持環抵接凸緣保持構件的底面而在石英製蓋體與底凸緣之間形成間隙，且在底凸緣與石英製蓋體之間的間隙的半徑方向外側設有密封元件，故在藉由石英製蓋體密閉反應管的爐口時，反應管與石英製蓋體不會直接抵接。又，由於在底凸緣與石英製蓋體之間的間隙的半徑方向外側設有密封元件，故可以藉由石英製蓋體確實地密閉反應管的爐口，同時，沒有腐蝕形成爐口部的金屬製部件之虞。
以上，雖敘述了幾個實施態樣，但這些實施態樣，僅單作為例子而表示者，故並非意圖限定本發明之範圍者。實際上，在此敘述之新穎的裝置以及方法，亦可具体化為各種其他的形態，進而，只要未脫離本發明的主旨，亦可在上述實施態樣的形態中，進行各種的省略、置換以及變更。本案請求項以及他們的均等物或是均等方法，係意指包含涉入本發明的範圍及主旨的形態或是變形。
1‧‧‧熱處理裝置
10‧‧‧排氣口
12‧‧‧作業區域
13‧‧‧升降機構
14‧‧‧緩衝機構
15‧‧‧保持板
16‧‧‧晶舟
17‧‧‧晶舟本體
18‧‧‧腳部
19‧‧‧下方凸緣部
2‧‧‧熱處理爐
22‧‧‧底板
23‧‧‧頂蓋
24‧‧‧支柱
25‧‧‧溝部
26‧‧‧旋轉機構
27‧‧‧旋轉軸部
28‧‧‧殼體
3‧‧‧爐口
34‧‧‧軸孔部
4‧‧‧反應管
4a‧‧‧底凸緣
5‧‧‧蓋體
5B‧‧‧石英製蓋體
5C‧‧‧金屬製蓋體
6‧‧‧加熱器
62‧‧‧爐口加熱機構
64‧‧‧支柱
65‧‧‧發熱電阻體
66‧‧‧遮熱板
67‧‧‧貫通穴
68‧‧‧導通管
7‧‧‧凸緣保持構件
70‧‧‧支持環
8‧‧‧底板
9‧‧‧氣體導入管
W‧‧‧晶圓

Claims (4)

  1. 一種熱處理裝置，包含：圓筒狀之石英製反應管，其下方具有爐口並具有底凸緣；凸緣保持構件，用以保持該反應管之該底凸緣；以及蓋體，其具有金屬製蓋體，及由金屬製蓋體所支持而將反應管的爐口密閉之石英製蓋體；該石英製蓋體，係藉由支持環固定於該金屬製蓋體，該支持環透過緩衝材抵接於凸緣保持構件的底面，在該石英製蓋體與該底凸緣之間形成間隙；在該底凸緣與該石英製蓋體之間的該間隙的半徑方向外側，設有密封元件。
  2. 如申請專利範圍第1項所述之熱處理裝置，其中，密封元件的縱剖面呈Q字形狀，並具有藉由設置於該支持環上的覆蓋環加以固定之突出部分。
  3. 如申請專利範圍第1項所述之熱處理裝置，其中，該支持環係由金屬製成，在該支持環內，設置用以冷卻該密封元件之冷卻水路。
  4. 如申請專利範圍第1項所述之熱處理裝置，其中，該石英製蓋體更在該石英製蓋體的頂面，於密封元件的半徑方向內側設有圓周溝，該圓周溝用以將從半徑方向中央部沿著該石英製蓋體的頂面朝半徑方向外側移行之熱予以遮斷。
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