TW202013587A - 成膜裝置 - Google Patents

成膜裝置 Download PDF

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TW202013587A
TW202013587A TW108123557A TW108123557A TW202013587A TW 202013587 A TW202013587 A TW 202013587A TW 108123557 A TW108123557 A TW 108123557A TW 108123557 A TW108123557 A TW 108123557A TW 202013587 A TW202013587 A TW 202013587A
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mounting table
film
gas
gap
temperature
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鳥屋大輔
藤里敏章
古屋雄一
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日商東京威力科創股份有限公司
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Abstract

本發明提供一種可抑制所成膜之膜的不均勻之技術。
其解決手段為一種成膜裝置，具有：處理容器，係在進行成膜時使內部成為真空氛圍而被供應有反應氣體；載置台，係配置在該處理容器的內部，且設置有基板加熱部，並載置有基板；支撐組件，係從載置有該基板之載置面的內面側來支撐該載置台；調溫組件，係形成有中空部而以該中空部來覆蓋該支撐組件，且配置在該載置台的該內面，可進行溫度調整；絕熱組件，係配置在該載置台與該調溫組件之間；以及吹淨氣體供應部，係將吹淨氣體供應至該支撐組件與該調溫組件間的間隙。

Description

成膜裝置
本揭示關於一種成膜裝置。
半導體積體電路之製造中，會對半導體晶圓等基板供應反應氣體來進行成膜處理。專利文獻1中揭示一種在成膜處理之際，會將沉積抑制用氣體供應至基板側邊來抑制膜沉積在基板表面以外的部位，例如基板邊緣部或基板內面部、載置台的內面部及側面部或處理容器內(以下記載為不必要的部位)之技術。
[先前技術文獻] [專利文獻]
專利文獻1：日本特開2000-25261號公報
本揭示係提供一種可抑制基板的溫度降低，同時抑制膜沉積在不必要的部位之技術。
本揭示一樣態之成膜裝置具有：處理容器，在進行成膜時內部成為真空氛圍而被供應有反應氣體；載置台，係配置在該處理容器的內部，且設置有基板加熱部，並載置有基板；支撐組件，係從載置有該基板之載置面的內面側來支撐該載置台；調溫組件，係形成有中空部而以該中空部來覆蓋該支撐組件，且配置在該載置台的該內面，可進行溫度調整；絕熱組件，係配置在該載置台與該調溫組件之間；以及吹淨氣體供應部，係於該支撐組件與該調溫組件之間形成有第1間隙，會對該第1間隙供應吹淨氣體。
依據本揭示，便可抑制膜沉積在不必要的部位。
1‧‧‧成膜裝置
2‧‧‧處理容器
3‧‧‧載置台
4‧‧‧氣體噴出機構
5‧‧‧箍位環
6‧‧‧調溫夾套
7‧‧‧絕熱環
32‧‧‧邊緣環
33‧‧‧加熱器
34‧‧‧支撐組件
35‧‧‧突部
36‧‧‧外緣部
37‧‧‧貫穿孔
52‧‧‧內緣部
53‧‧‧抵接部
61‧‧‧柱狀部
62‧‧‧平板部
63‧‧‧中空部
63A‧‧‧間隙
64‧‧‧冷媒流道
65A‧‧‧冷媒配管
65B‧‧‧冷媒配管
66‧‧‧冷媒單元
71‧‧‧間隙
72‧‧‧突起部
73‧‧‧密封件
81‧‧‧氣體配管
82‧‧‧突出部
83‧‧‧氣體配管
84‧‧‧密封件
85‧‧‧貫穿孔
86‧‧‧傳熱氣體供應部
90‧‧‧吹淨氣體供應部
91‧‧‧氣體配管
110‧‧‧銷孔
111‧‧‧升降銷
150‧‧‧控制部
W‧‧‧晶圓
圖1係顯示實施型態相關之成膜裝置一概略構成例之剖面圖。
圖2係顯示實施型態相關之載置台附近一構成例之放大圖。
圖3顯示實施型態相關之絕熱組件一構成例之俯視圖。
圖4係顯示使實施型態相關之成膜裝置的載置台下降至晶圓的傳遞位置之一狀態例之圖式。
以下，參閱圖式來針對本案所揭示之成膜裝置的實施型態詳細地說明。此外，所揭示之膜裝置並未因本實施型態而受到限制。又，各實施型態可在不會導致處理內容矛盾之範圍內來適當地組合。
然而，對於成膜所使用之反應氣體來說，會有適於成膜之溫度。因此，成膜裝置中，會於用以載置基板之載置台設置有加熱器，並以加熱器來將基板加熱為適於成膜之溫度。另一方面，成膜裝置當有膜沉積在不必要的部位之情況，則必須進行清潔。於是，成膜裝置中，會將載置台周邊等欲抑制膜的沉積之部位予以冷卻來抑制膜的沉積。例如成膜裝置中，係將處理容器或用以支撐載置台之支撐組件予以冷卻來抑制膜的沉積。
然而，例如將支撐組件予以冷卻的情況，會有加熱器的熱被支撐組件吸收而導致基板溫度降低，則成膜速度便會降低之情況。因此，在為了抑制成膜速度降低而讓支撐組件的溫度上升之情況，便會有膜沉積在載置台周邊等不必要的部位。
於是，便期待能夠抑制基板的溫度降低，同時抑制膜沉積在不必要的部位。
[成膜裝置的構成]
接下來，針對實施型態相關之成膜裝置的構成來加以說明。以下係以成膜裝置會對作為基板之半導體晶圓(以下稱作晶圓)進行成膜的情況為例來加以說明。圖1係顯示實施型態相關之成膜裝置一概略構成例之剖面圖。成膜裝置1係具有處理容器2。
處理容器2在成膜之際會使內部成為真空氛圍。處理容器2係於內部具有用以載置晶圓W之載置台3，以及對向於載置台3般地設置於處理容器2的上部來對晶圓W表面供應氣體之氣體噴出機構4。
載置台3係以例如氮化鋁或石英等作為材料而形成為扁平的圓板狀。載置台3的內部係埋設有會加熱晶圓W而作為基板加熱部之加熱器33。加熱器33係由例如片狀的電阻發熱體所構成，從電源部(圖中未顯示)被供應電力而發熱來加熱載置台3的載置面，藉此使晶圓W升溫至適於成膜的特定製程溫度。例如，加熱器33會將載置台3上載置的晶圓W加熱至例如130~250℃。
載置台3係從載置有晶圓W之載置面的內面側藉由支撐組件34來被加以支撐。例如，載置台3係藉由柱狀的支撐組件34來支撐成為內面側之下面側的中央部。
載置台3外周的緣部係設置有圓環狀的邊緣環32。又，載置台3的下部係設置有調溫夾套6來作為調溫組件。調溫夾套6係於下部形成有直徑大於支撐組件34的柱狀部61，且於上部形成有與載置台3相同程度尺寸的平板部62。又，調溫夾套6係於中央的上下方向形成有直徑大於支撐組件34之柱狀的中空部63。調溫夾套6係配置為會將支撐組件34收納在中空部63，且以中空部63覆蓋支撐組件34同時覆蓋載置台3的內面整面。由於中空部63係大於支撐組件34的直徑，故會形成有支撐組件34與調溫夾套6之間的間隙63A。此間隙63A只要是1~5mm左右即可。此外，為了抑制調溫夾套6與支撐組件34的偏移，調溫夾套6與支撐組件34亦可以圓周方向的一部分來相接觸。例如，柱狀部61亦可於中空部63側的面，而於圓周方向相距間隔地設置有複數突部，並以複數突部來與柱狀部61相接觸。
調溫夾套6係於平板部62的內部形成有冷媒流道64，且於柱狀部61的內部設置有2根冷媒配管65A、65B。冷媒流道64係一端部會連接於一冷媒配管65A，另一端部則連接於另一冷媒配管65B。冷媒配管65A、65B係連接於冷媒單元66。冷媒單元66為例如冷卻單元。冷媒單元66可控制冷媒的溫度，並將特定溫度的冷媒供應至冷媒配管65A。冷媒流道64係從冷媒單元66透過冷媒配管65A而被供應有冷媒。被供應至冷媒流道64的 冷媒會透過冷媒配管65B再回到冷媒單元66。調溫夾套6會使冷媒(例如冷卻水等)循環於冷媒流道64中，藉此來進行溫度調整。
載置台3與調溫夾套6之間係配置有絕熱環7來作為絕熱組件。絕熱環7係由例如SUS316、A5052、Ti(鈦)、陶瓷等而形成為圓盤狀。
圖2係顯示實施型態相關之載置台附近一構成例之放大圖。絕熱環7係與載置台3之間，而在全部的圓周方向上形成有從調溫夾套6的中空部63到緣部會相連通之間隙71。例如，絕熱環7在與載置台3呈對向之上面係設置有複數突起部72。又，絕熱環7係沿著上面的緣部而設置有例如金屬密封件等密封件73。
載置台3係於較載置面之晶圓W的配置位置要外側處，而於圓周方向橫跨整周地形成有突出於上部之突部35。邊緣環32係配置在較載置台3的突部35要更為外側之外緣部36的上部，且藉由外緣部36而被卡固。
載置台3係於較密封件73的配置位置要內側處而形成有貫穿載置面與內面之貫穿孔37。本實施型態中，在外緣部36與突部35的邊界附近處，係沿圓周方向而整周地形成有複數貫穿孔37。
圖3係顯示實施型態相關之絕熱環7一構成例之俯視圖。圖3係顯示從上面側來觀看絕熱環7之俯視圖。絕熱環7係於圓周方向相距間隔而同心圓狀地形成有2列複數突起部72。又，絕熱環7係沿著緣部而整周地設置有密封件73。此外，突起部72只要是同心圓狀地形成為至少1列即可。
如圖2所示，絕熱環7係以複數突起部72而抵接於載置台3，且在複數突起部72以外的部分則是與載置台3之間形成有間隙71。
載置台3及調溫夾套6係設置有會將傳熱氣體供應至載置台3的載置面之氣體供應管。例如，調溫夾套6係於平板部62及柱狀部61的內部設置有氣體配管81。氣體配管81的一端係到達平板部62的上面。設置有氣體配管81的一端之平板部62係設置有較周邊更為突出之突出部82，突出部82係抵接於載置台3。載置台3係於內部設置有氣體配管83。氣體配管83的一端係到達載置面。氣體配管83的另一端則是到達突出部82與氣體配管81一端對向的位置。突出部82係於周圍設置有用以防止傳熱氣體的漏洩之 例如O型環等密封件84。如圖3所示，絕熱環7係以不會干擾到突出部82之方式而於對應於突出部82之位置形成有貫穿孔85。
如圖1所示，氣體配管81的另一端係到達柱狀部61的下面且連接於傳熱氣體供應部86。傳熱氣體供應部86會將例如He氣等傳熱氣體供應至氣體配管81。從傳熱氣體供應部86被供應至氣體配管81的另一端之傳熱氣體會到達氣體配管81的一端，並流往氣體配管83的另一端，再從氣體配管83的一端被供應至載置台3的載置面。
如圖1所示，載置台3及調溫夾套6的下部係設置有吹淨氣體供應部90。吹淨氣體供應部90係透過氣體配管91來將例如氮氣或CO氣體等吹淨氣體供應至支撐組件34與調溫夾套6之間的間隙63A。
支撐組件34及調溫夾套6係構成為可藉由升降機構100而升降。例如，支撐組件34及調溫夾套6的柱狀部61係貫穿處理容器2的底面部所形成之貫穿孔101，且連接於升降板102。升降板102與下側容器22之間係藉由伸縮管103而氣密地接合。升降板102會藉由升降機構100而升降。藉由升降機構100來讓支撐組件34及調溫夾套6升降，則載置台3便可在與外部的晶圓搬送機構(圖中未顯示)之間，而在進行晶圓W的傳遞之傳遞位置與進行晶圓W的處理之處理位置之間做升降。
如圖2及圖3所示，載置台3、調溫夾套6及絕熱環7係形成有貫穿於上下方向之複數銷孔110。例如，載置台3、調溫夾套6及絕熱環7係在載置面的圓周方向上以均等間隔而形成有貫穿於上下方向之3根銷孔110。各銷孔110係分別於上下方向可移動地穿插有例如石英製的升降銷111。此外，圖1中僅圖示出2根升降銷111。升降銷111係藉由銷孔110所設置之彈簧(圖中未顯示)等來往下方被賦予勢能。升降銷111如圖1所示，係在使載置台3移動至晶圓W的處理位置之狀態下，藉由下端部會從調溫夾套6的底面突出，且扁平的頭部會卡固在載置台3的上面，而被收納在銷孔110。
各升降銷111的下方側係設置有環狀升降組件112。升降組件112係藉由支撐部113而被固定在下側容器22的底面。各升降銷111在使載置台3下降至晶圓W的傳遞位置後，下面會抵接於升降組件112而自載置台3上升。圖4係顯示使實施型態相關之成膜裝置的載置台下降至晶圓的傳遞位 置之一狀態例之圖式。升降板102係藉由使載置台3下降至晶圓W的傳遞位置來舉升各升降銷111，以使升降銷111所支撐之晶圓W自載置台3的載置面升降。
處理容器2係構成為於扁平的碗形下側容器22上重疊有形成為環狀之排氣導管21。例如，下側容器22係由鋁等所構成，且底面設置有上述貫穿孔101。
下側容器22的側壁部223係設置有搬出入口28。搬出入口28係設置有閘閥281。搬出入口28係藉由閘閥281而被開閉。晶圓W係藉由外部所設置之搬送臂等晶圓搬送機構來從搬出入口28被搬出入。
排氣導管21係構成為使例如鋁製的角狀導管彎曲所形成之環狀體。排氣導管21係重疊在下側容器22上而構成處理容器2。排氣導管21係沿內周面而形成有槽縫21a，藉由縮小流通傳導率，便可謀求處理容器2的圓周方向上之處理空間40的排氣均勻化。排氣導管21的外壁面係連接有排氣管29a。又，下側容器22的側壁部223係連接有排氣管29b。排氣管29a及排氣管29b係連接有具備真空幫浦或壓力調整閥等之排氣機構67。處理容器2可利用排氣管29a及排氣管29b所連接之排氣機構67來進行內部的真空排氣。
處理容器2係設置有圍繞處理位置的載置台3，且將處理容器2的內部分隔為上部側的處理空間40與下部側的空間(即底部區域20)之圍繞組件，即內環26。內環26為例如鋁所形成之環狀組件，係形成為可裝填在下側容器22之側壁部223的內壁面與載置台3的側周面間之形狀。內環26的上面外周部係設置有朝外側則變得愈寬廣之凸緣部263，內環26係以使凸緣部263卡固在排氣導管21之狀態而被配置在處理容器2內。此外，內環26亦可藉由例如石英製的環罩來覆蓋上面側。
內環26的上面係設置有箍位環5。箍位環5係形成為圓環狀，且以下面被載置於內環26上之狀態而被配置在處理容器2內。箍位環5之圓環狀的內緣部52係較內環26的內周面而更朝內側伸出。內緣部52的內端係位在載置台3上所載置之晶圓W的周緣部上方。內緣部52內端的下面係形成有例如平坦的抵接部53。藉由升降機構100來讓載置台3上升至進行晶圓 W處理之處理位置後，箍位環5的抵接部53會橫跨整周地抵接在載置台3上之晶圓W的周緣部，而藉由箍位環5來按壓晶圓W。此外，雖係使實施型態所記載之抵接部53為平坦面，但並未侷限於此。
箍位環5可由鋁等金屬所構成，或是由氧化鋁等陶瓷所構成。箍位環5為了藉由抵接部53來按壓載置台3上的晶圓W以抑制反應氣體繞入，較佳宜具有充分的重量，例如數百公克~數公斤程度的重量。此外，內環26亦可設置有會預熱內環26本身或箍位環5之加熱器等預熱部。
氣體噴出機構4係藉由支撐組件49而從上面側被加以支撐。藉由支撐組件49來封閉排氣導管21上面側的開口，以使處理容器2成為密閉狀態。排氣導管21與支撐組件49之間係設置有用以將處理容器2內保持為氣密之O型環211。
藉由支撐組件49而被支撐之氣體噴出機構4係配置為底面會與載置台3的上面呈對向。支撐組件49係設置有會將成膜所使用的反應氣體朝氣體噴出機構4供應之供應管。此處，係說明實施型態相關之成膜裝置1是使用例如釕前驅體來作為反應氣體以進行釕膜的成膜之情況。支撐組件49係設置有釕氣體供應管481來作為會供應反應氣體之供應管。釕氣體供應管481的上游側係設置有釕氣體供應部401，該釕氣體供應部401係具有會儲存釕前驅體之原料槽或用以供應釕氣體之載置氣體供應機構、流量調節部等。
氣體噴出機構4會噴出從釕氣體供應管481所供應的釕氣體。被噴出之釕氣體會在氣體噴出機構4與載置台3間的處理空間40反應來對晶圓W進行釕膜的成膜處理。
上述方式所構成之成膜裝置1係藉由控制部150來統括地控制其動作。控制部150為例如電腦，係具有CPU(Central Processing Unit)、RAM(Random Access Memory)、ROM(Read Only Memory)、輔助記憶裝置等。CPU會依據ROM或輔助記憶裝置所儲存之程式或成膜的製程條件而動作，來控制裝置整體的動作。例如，控制部150會控制來自釕氣體供應部401之反應氣體等的供應動作、載置台3的升降動作、或排氣機構67所進行之處理容器2內的排氣動作。又，控制部150會控制加熱器33所進行之加熱動作、冷 媒單元66所進行之冷媒的供應動作、以及來自吹淨氣體供應部90之吹淨氣體的供應動作。此外，控制所需之可被電腦讀取的程式亦可被記憶在記憶媒體。記憶媒體係由例如軟碟、CD(Compact Disc)、CD-ROM、硬碟、快閃記憶體或DVD等所構成。又，控制部150可被設置在成膜裝置1的內部，也可被設置在外部。當控制部150是被設置在外部的情況，控制部150藉由有線或無線等通訊手段便可控制成膜裝置1。
接下來說明成膜裝置1藉由控制部150的控制所實施之成膜流程。成膜裝置1會使排氣機構67作動來將處理容器2內減壓至真空氛圍。成膜裝置1在搬入晶圓W之際，會如圖4所示般地使載置台3下降至傳遞位置，並打開閘閥281。經由搬出入口28並藉由晶圓搬送機構來將晶圓W搬入至載置台3的載置面。成膜裝置1會關閉閘閥281，並使載置台3上升至處理位置。
成膜裝置1在進行處理容器2內的壓力調整後，會將反應氣體供應至處理容器2內來對晶圓W進行成膜處理。例如，成膜裝置1係從釕氣體供應部401朝氣體噴出機構4供應釕氣體，再使釕氣體從氣體噴出機構4被噴出。從氣體噴出機構4被噴出的釕氣體會在氣體噴出機構4與載置台3間的處理空間40反應來對晶圓W進行釕膜的成膜處理。
然而，對於成膜所使用之反應氣體來說，會有適於成膜之溫度。因此，成膜裝置1係在成膜處理前便先控制從電源部(圖中未顯示)朝加熱器33供應的電力，並以加熱器33來將晶圓W加熱至適於成膜的特定製程溫度。例如，成膜裝置1會將晶圓W加熱至250℃。又，成膜裝置1為了抑制膜沉積，係從冷媒單元66供應冷媒來冷卻調溫夾套6。例如，成膜裝置1會控制從冷媒單元66所供應之冷媒的溫度，並將調溫夾套6控制為較製程溫度要低之特定溫度。例如，成膜裝置1係將調溫夾套6控制為80℃來抑制膜沉積。
在如此般地冷卻調溫夾套6之情況，成膜裝置1中會有加熱器33的熱被調溫夾套6吸收而導致晶圓W的溫度降低，則成膜速度便會降低之情況。
然而，實施型態相關之成膜裝置1係設置有配置在載置台3與調溫夾套6間的絕熱環7。絕熱環7會抑制加熱器33的熱被調溫夾套6吸收。於是，成膜裝置1中，即便是將調溫夾套6予以冷卻的情況，仍可抑制成膜速度降低。又，由於成膜裝置1可冷卻調溫夾套6，故可抑制膜沉積在調溫夾套6。
又，實施型態相關之絕熱環7係在與載置台3之間，而於所有的圓周方向上形成有從調溫夾套6的中空部63到緣部會相連通之間隙71，實施型態相關之成膜裝置1係從吹淨氣體供應部90透過氣體配管91來將吹淨氣體供應至支撐組件34與調溫夾套6之間的間隙63A。吹淨氣體可從成膜處理前且在成膜處理中被持續地供應，或是從晶圓W被載置於載置台3之時間點來持續地被供應。從吹淨氣體供應部90所供應之吹淨氣體會沿著間隙63A再到達絕熱環7與載置台3之間的間隙71。然後，吹淨氣體會因間隙71而擴散至載置台3的整周方向，並從各貫穿孔37被噴出再被供應至載置台3的載置面周圍。被供應至載置台3的載置面周圍之吹淨氣體會經由箍位環5與內環26的間隙或箍位環5與晶圓W的間隙而流往排氣管29a，或是從箍位環5與邊緣環32間流往排氣管29b而被排氣。
成膜裝置1係藉由間隙71來抑制絕熱環7與載置台3間的熱傳遞，以提高絕熱環7的絕熱效率。於是，成膜裝置1中，即便是在將調溫夾套6予以冷卻後的情況，仍可抑制成膜速度降低。又，成膜裝置1藉由將吹淨氣體供應至載置台3的載置面周圍，便可抑制膜沉積在載置台3的載置面周圍。又，成膜裝置1可藉由供應吹淨氣體來抑制成膜氣體進入各貫穿孔37或間隙71，從而可抑制膜沉積在各貫穿孔37或間隙71。又，成膜裝置1不需設置有吹淨氣體用的氣體供應管，便可透過間隙63A、間隙71來將吹淨氣體供應至載置台3的周邊。
如以上所述，本實施型態相關之成膜裝置1係具有處理容器2、載置台3、支撐組件34、作為調溫組件之調溫夾套6、作為絕熱組件之絕熱環7、以及吹淨氣體供應部90。處理容器2在進行成膜時係使內部成為真空氛圍來供應反應氣體。載置台3係配置於處理容器2的內部，且設置有加熱器33來作為基板加熱部，並會載置作為基板之晶圓W。支撐組件34會從載置 有晶圓W之載置面的內面側來支撐載置台3。調溫夾套6係形成有中空部63，以該中空部63來覆蓋支撐組件34且被配置於載置台3的內面，便可進行溫度調整。絕熱環7係配置於載置台3與調溫夾套6之間。吹淨氣體供應部90係於支撐組件34與調溫夾套6之間形成有間隙63A，會將吹淨氣體供應至該間隙63A。藉此，成膜裝置1便可抑制晶圓W的溫度降低，同時抑制膜沉積在不必要的部位。
又，實施型態相關之絕熱環7係在與載置台3之間，而於所有的圓周方向上形成有從調溫夾套6的中空部63到緣部會相連通之間隙71。藉此，成膜裝置1中，絕熱環7與載置台3間的熱傳遞便會受到抑制，來提高絕熱環7之絕熱效率。又，由於成膜裝置1可透過間隙71來將吹淨氣體供應至載置台3的周圍，故可抑制膜沉積。
又，本實施型態相關之絕熱環7係於與載置台3呈對向之面形成有至少1列於圓周方向相距間隔且同心圓狀地抵接於載置台3之複數突起部72。藉此，成膜裝置1中，便可將載置台3穩定地配置在絕熱環組件7上。又，成膜裝置1可於與載置台3呈對向之面的所有圓周方向上形成有間隙71。
又，本實施型態相關之絕熱環7係沿著與載置台3呈對向之面的緣部而設置有密封件73。載置台3係於較密封件73的配置位置要靠內側處，沿著密封件73而形成有貫穿載置面與內面之複數貫穿孔37。藉此，成膜裝置1便可將吹淨氣體直接供應至載置台3的載置面周圍，從而可抑制膜沉積在載置面周圍。
又，本實施型態相關之調溫夾套6係設置有會將冷媒供應至內部之流道，且具有入口與出口來讓冷媒循環。藉此，成膜裝置1藉由使冷媒循環於調溫夾套6來進行冷卻，便可抑制膜沉積在載置台3的下部側。
又，本實施型態相關之調溫夾套6係設置有會將傳熱氣體供應至內部來作為流道之氣體配管83。氣體配管83的一端係連接於傳熱氣體供應部86，氣體配管83的另一端係於周圍設置有密封件84，且連接於設置於載置台3內面來作為傳熱氣體供應孔之氣體配管83。藉此，成膜裝置1便可從調溫夾套6的下部透過氣體配管83來將傳熱氣體供應至載置台3。
又，本實施型態相關之調溫夾套6係形成有複數突起部72，且沿著緣部設置有密封件73，並與載置台3的內面相抵接，而於該載置台3的內面與調溫夾套6之間形成有間隙71。藉此，成膜裝置1不需設置有吹淨氣體用的氣體配管，即可透過間隙71來供應吹淨氣體。
又，本實施型態相關之成膜裝置1中，間隙63A與間隙71是相連通的。從吹淨氣體供應部90所供應之吹淨氣體係透過間隙63A與間隙71來被供應至載置台3所設置之複數貫穿孔37。藉此，成膜裝置1不需設置有吹淨氣體的氣體配管，即可將吹淨氣體供應至載置台3。
又，本實施型態相關之成膜裝置1另具有形成為圓環狀，且較晶圓W的緣部要更抵接於內側之箍位環5。藉由箍位環5與載置台3的緣部會形成有空間，而透過載置台3的複數貫穿孔37來供應吹淨氣體。藉此，成膜裝置1便可抑制膜沉積在載置台3的緣部。
以上，雖已針對實施型態來加以說明，但本說明書所揭示之實施型態應被認為所有要點僅為例示而非用以限制本發明之內容。實際上，上述實施型態可以多種型態來具體實現。又，上述實施型態亦可在未背離申請專利範圍及其要旨之範圍內，而以各種型態來做省略、置換或變更。
例如實施型態中，雖是舉使成膜所使用的反應氣體為釕前驅體之情況為例來加以說明，但並未侷限於此。反應氣體只要是可被使用於對基板的成膜之氣體，則亦可為任何氣體。
又，實施型態中，雖是舉透過支撐組件34與調溫夾套6間的間隙63A來讓吹淨氣體流通之情況為例來加以說明，但並未侷限於此。例如，亦可於支撐組件34之中空部63側的面或調溫夾套6之中空部63側的面而於上下方向形成有溝槽，並透過溝槽來讓吹淨氣體流通。
又，實施型態中，雖是舉於絕熱環7的緣部設置有密封件73，且於載置台3設置有貫穿孔37，而透過貫穿孔37來將吹淨氣體供應至載置台3的載置面周圍之情況為例來加以說明，但並未侷限於此。例如，亦可為並未設置有密封件73，而是從載置台3與絕熱環7的間隙來將吹淨氣體供應至載置台3的側面周圍。
3‧‧‧載置台
5‧‧‧箍位環
6‧‧‧調溫夾套
7‧‧‧絕熱環
32‧‧‧邊緣環
33‧‧‧加熱器
34‧‧‧支撐組件
35‧‧‧突部
36‧‧‧外緣部
37‧‧‧貫穿孔
52‧‧‧內緣部
53‧‧‧抵接部
61‧‧‧柱狀部
62‧‧‧平板部
63A‧‧‧間隙
64‧‧‧冷媒流道
65A‧‧‧冷媒配管
71‧‧‧間隙
72‧‧‧突起部
73‧‧‧密封件
81‧‧‧氣體配管
82‧‧‧突出部
83‧‧‧氣體配管
84‧‧‧密封件
85‧‧‧貫穿孔
110‧‧‧銷孔
111‧‧‧升降銷
W‧‧‧晶圓

Claims (9)

  1. 一種成膜裝置，具有：
    處理容器，係在進行成膜時使內部成為真空氛圍而被供應有反應氣體；
    載置台，係配置在該處理容器的內部，且設置有基板加熱部，並載置有基板；
    支撐組件，係從載置有該基板之載置面的內面側來支撐該載置台；
    調溫組件，係形成有中空部而以該中空部來覆蓋該支撐組件，且配置在該載置台的該內面，可進行溫度調整；
    絕熱組件，係配置在該載置台與該調溫組件之間；以及
    吹淨氣體供應部，係於該支撐組件與該調溫組件之間形成有第1間隙，會對該第1間隙供應吹淨氣體。
  2. 如申請專利範圍第1項之成膜裝置，其中該絕熱組件係與該載置台之間，在全部的圓周方向上形成有從該調溫組件的中空部到緣部會相連通之間隙。
  3. 如申請專利範圍第1或2項之成膜裝置，其中該絕熱組件係在與該載置台呈對向之面形成有至少1列複數突起部，該複數突起部係於圓周方向相距間隔而同心圓狀地抵接於該載置台。
  4. 如申請專利範圍第1至3項中任一項之成膜裝置，其中該絕熱組件係沿著與該載置台呈對向之面的緣部而設置有密封件；
    該載置台係於較該密封件的配置位置要內側處形成有複數貫穿孔，該複數貫穿孔係沿著該密封件而貫穿該載置面與該內面。
  5. 如申請專利範圍第1至4項中任一項之成膜裝置，其中該調溫組件係設置有將冷媒供應至內部之流道，且具有入口與出口，可供冷媒循環。
  6. 如申請專利範圍第1至5項中任一項之成膜裝置，其中該調溫組件係設置有將傳熱氣體供應至內部之流道，該流道的一端係連接於傳熱 氣體供應源，該流道的另一端則於周圍設置有密封組件，且連接於該載置台的內面所設置之傳熱氣體供應孔。
  7. 如申請專利範圍第1至6項中任一項之成膜裝置，其中該絕熱組件係形成有複數突起部，且沿著緣部而設置有密封件，並與該載置台的內面相抵接，而於該載置台的內面與該絕熱組件之間形成有第2間隙。
  8. 如申請專利範圍第7項之成膜裝置，其中該第1間隙與該第2間隙為相連通，從該吹淨氣體供應部所供應之吹淨氣體會透過該第1間隙及該第2間隙被供應至該載置台所設置之複數貫穿孔。
  9. 如申請專利範圍第1至8項中任一項之成膜裝置，其另具有形成為圓環狀，且較該基板的緣部要更為抵接於內側之箍位環；
    藉由該箍位環與該載置台的緣部來形成有空間，並透過該載置台的複數貫穿孔來供應吹淨氣體。
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JP7149786B2 (ja) * 2018-09-20 2022-10-07 東京エレクトロン株式会社 載置ユニット及び処理装置
US11236424B2 (en) * 2019-11-01 2022-02-01 Applied Materials, Inc. Process kit for improving edge film thickness uniformity on a substrate
CN113046726A (zh) * 2021-02-07 2021-06-29 马浩宇 一种适用于碳化硅晶片vcd工艺腔体装置
KR20230158256A (ko) * 2022-05-11 2023-11-20 피에스케이홀딩스 (주) 기판 스티키 현상 개선을 위한 기판 처리 장치 및 기판 처리 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303288A (ja) * 1997-04-26 1998-11-13 Anelva Corp プラズマ処理装置用基板ホルダー
JP2000025261A (ja) 1998-07-10 2000-01-25 Konica Corp 熱溶融型転写プリンタ
US6444039B1 (en) * 2000-03-07 2002-09-03 Simplus Systems Corporation Three-dimensional showerhead apparatus
US6221166B1 (en) * 2000-06-07 2001-04-24 Simplus Systems Corporation Multi-thermal zone shielding apparatus
US6413321B1 (en) * 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
JP2007051317A (ja) * 2005-08-16 2007-03-01 Ngk Insulators Ltd 加熱装置
US20070254100A1 (en) * 2006-04-26 2007-11-01 Applied Materials, Inc. MOCVD reactor without metalorganic-source temperature control
JP5660753B2 (ja) * 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
JP5148955B2 (ja) 2007-09-11 2013-02-20 東京エレクトロン株式会社 基板載置機構及び基板処理装置
JP5029435B2 (ja) 2008-03-11 2012-09-19 東京エレクトロン株式会社 載置台構造及び熱処理装置
JP5482282B2 (ja) 2009-03-03 2014-05-07 東京エレクトロン株式会社 載置台構造及び成膜装置
CN102341902A (zh) * 2009-03-03 2012-02-01 东京毅力科创株式会社 载置台结构、成膜装置和原料回收方法
JP5262878B2 (ja) * 2009-03-17 2013-08-14 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
WO2014178160A1 (ja) * 2013-04-30 2014-11-06 東京エレクトロン株式会社 成膜装置
JP7149786B2 (ja) * 2018-09-20 2022-10-07 東京エレクトロン株式会社 載置ユニット及び処理装置

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