TWI436480B - 在ＳｅＯＩ基板上之具有在絕緣層之下的埋入式後控制閘之資料路徑單元 - Google Patents
在ＳｅＯＩ基板上之具有在絕緣層之下的埋入式後控制閘之資料路徑單元 Download PDFInfo
- Publication number
- TWI436480B TWI436480B TW099143864A TW99143864A TWI436480B TW I436480 B TWI436480 B TW I436480B TW 099143864 A TW099143864 A TW 099143864A TW 99143864 A TW99143864 A TW 99143864A TW I436480 B TWI436480 B TW I436480B
- Authority
- TW
- Taiwan
- Prior art keywords
- control gate
- transistor
- unit
- rear control
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 40
- 238000000034 method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 230000009467 reduction Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1051526A FR2957193B1 (fr) | 2010-03-03 | 2010-03-03 | Cellule a chemin de donnees sur substrat seoi avec grille de controle arriere enterree sous la couche isolante |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201140830A TW201140830A (en) | 2011-11-16 |
| TWI436480B true TWI436480B (zh) | 2014-05-01 |
Family
ID=42669823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099143864A TWI436480B (zh) | 2010-03-03 | 2010-12-15 | 在ＳｅＯＩ基板上之具有在絕緣層之下的埋入式後控制閘之資料路徑單元 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8432216B2 (fr) |
| EP (1) | EP2363886A1 (fr) |
| JP (1) | JP2011181896A (fr) |
| KR (1) | KR101178149B1 (fr) |
| CN (1) | CN102194820A (fr) |
| FR (1) | FR2957193B1 (fr) |
| SG (1) | SG173946A1 (fr) |
| TW (1) | TWI436480B (fr) |
| WO (1) | WO2011107355A1 (fr) |
Families Citing this family (9)
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| FR3009149A1 (fr) | 2013-07-24 | 2015-01-30 | St Microelectronics Sa | Element a retard variable |
| US10062680B2 (en) | 2014-05-08 | 2018-08-28 | Qualcomm Incorporated | Silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) standard library cell circuits having a gate back-bias rail(s), and related systems and methods |
| US9634697B2 (en) | 2015-09-09 | 2017-04-25 | Qualcomm Incorporated | Antenna selection and tuning |
| US10348243B2 (en) * | 2016-07-19 | 2019-07-09 | Globalfoundries Inc. | Switched capacitor circuit structure with method of controlling source-drain resistance across same |
| US10374092B2 (en) * | 2017-04-17 | 2019-08-06 | Globalfoundries Inc. | Power amplifier ramping and power control with forward and reverse back-gate bias |
| US10043826B1 (en) * | 2017-07-26 | 2018-08-07 | Qualcomm Incorporated | Fully depleted silicon on insulator integration |
| US11152396B2 (en) | 2017-12-26 | 2021-10-19 | Intel Corporation | Semiconductor device having stacked transistors and multiple threshold voltage control |
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| US8384156B2 (en) * | 2008-06-13 | 2013-02-26 | Yale University | Complementary metal oxide semiconductor devices |
| US8012814B2 (en) | 2008-08-08 | 2011-09-06 | International Business Machines Corporation | Method of forming a high performance fet and a high voltage fet on a SOI substrate |
| US8120110B2 (en) | 2008-08-08 | 2012-02-21 | International Business Machines Corporation | Semiconductor structure including a high performance FET and a high voltage FET on a SOI substrate |
| KR101623958B1 (ko) | 2008-10-01 | 2016-05-25 | 삼성전자주식회사 | 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로 |
| KR101522400B1 (ko) | 2008-11-10 | 2015-05-21 | 삼성전자주식회사 | 인버터 및 그를 포함하는 논리소자 |
-
2010
- 2010-03-03 FR FR1051526A patent/FR2957193B1/fr active Active
- 2010-12-15 SG SG2010093110A patent/SG173946A1/en unknown
- 2010-12-15 TW TW099143864A patent/TWI436480B/zh active
- 2010-12-16 KR KR1020100129299A patent/KR101178149B1/ko active IP Right Grant
- 2010-12-16 CN CN2010105957092A patent/CN102194820A/zh active Pending
- 2010-12-17 JP JP2010282122A patent/JP2011181896A/ja active Pending
- 2010-12-17 EP EP10195783A patent/EP2363886A1/fr not_active Withdrawn
-
2011
- 2011-01-14 US US13/007,483 patent/US8432216B2/en active Active
- 2011-02-18 WO PCT/EP2011/052413 patent/WO2011107355A1/fr active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| EP2363886A1 (fr) | 2011-09-07 |
| SG173946A1 (en) | 2011-09-29 |
| TW201140830A (en) | 2011-11-16 |
| CN102194820A (zh) | 2011-09-21 |
| JP2011181896A (ja) | 2011-09-15 |
| FR2957193B1 (fr) | 2012-04-20 |
| WO2011107355A1 (fr) | 2011-09-09 |
| US8432216B2 (en) | 2013-04-30 |
| FR2957193A1 (fr) | 2011-09-09 |
| US20110215860A1 (en) | 2011-09-08 |
| KR20110100130A (ko) | 2011-09-09 |
| KR101178149B1 (ko) | 2012-08-29 |
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