TWI347659B - Laminated sheet - Google Patents

Laminated sheet

Info

Publication number
TWI347659B
TWI347659B TW093120520A TW93120520A TWI347659B TW I347659 B TWI347659 B TW I347659B TW 093120520 A TW093120520 A TW 093120520A TW 93120520 A TW93120520 A TW 93120520A TW I347659 B TWI347659 B TW I347659B
Authority
TW
Taiwan
Prior art keywords
layer
laminated sheet
wafer
circuit side
backside
Prior art date
Application number
TW093120520A
Other languages
English (en)
Other versions
TW200507208A (en
Inventor
Hiroshi Noro
Koji Akazawa
Masayuki Yamamoto
Yasuhiko Yamamoto
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW200507208A publication Critical patent/TW200507208A/zh
Application granted granted Critical
Publication of TWI347659B publication Critical patent/TWI347659B/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/26Layered products comprising a layer of synthetic resin characterised by the use of special additives using curing agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/38Layered products comprising a layer of synthetic resin comprising epoxy resins
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322804A (ja) * 2004-05-10 2005-11-17 Nitto Denko Corp 光半導体装置
US20060068213A1 (en) * 2004-09-29 2006-03-30 O'brien Kevin Decorative laminate assembly with improved tie sheet and bridging agent
CN101035649B (zh) * 2004-10-08 2010-09-08 昭和电工株式会社 液体珩磨加工机和液体珩磨加工方法
JP2006261529A (ja) * 2005-03-18 2006-09-28 Lintec Corp フリップチップ実装用アンダーフィルテープおよび半導体装置の製造方法
US20090075429A1 (en) * 2005-04-27 2009-03-19 Lintec Corporation Sheet-Like Underfill Material and Semiconductor Device Manufacturing Method
JP2007035880A (ja) * 2005-07-26 2007-02-08 Matsushita Electric Works Ltd バンプ付きウエハの製造方法、バンプ付きウエハ、半導体装置
JP2007141963A (ja) * 2005-11-15 2007-06-07 Denso Corp 基板の実装方法、及びその実装方法で実装された半導体装置
JP4699189B2 (ja) * 2005-12-01 2011-06-08 日東電工株式会社 半導体装置の製造方法及び電子部品
JP2007250952A (ja) * 2006-03-17 2007-09-27 Sanken Electric Co Ltd 半導体装置およびその製造方法
JP2007266191A (ja) * 2006-03-28 2007-10-11 Nec Electronics Corp ウェハ処理方法
US8766224B2 (en) 2006-10-03 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated switch
JP2008159755A (ja) * 2006-12-22 2008-07-10 Sekisui Chem Co Ltd 半導体装置の製造方法
US7838391B2 (en) * 2007-05-07 2010-11-23 Stats Chippac, Ltd. Ultra thin bumped wafer with under-film
US9111981B2 (en) * 2008-01-24 2015-08-18 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
WO2009099191A1 (ja) 2008-02-07 2009-08-13 Sumitomo Bakelite Company Limited 半導体用フィルム、半導体装置の製造方法および半導体装置
JP5318435B2 (ja) * 2008-02-29 2013-10-16 日東電工株式会社 半導体ウエハの裏面研削用粘着シート及びこの裏面研削用粘着シートを用いる半導体ウエハの裏面研削方法
JP2009260224A (ja) * 2008-03-21 2009-11-05 Hitachi Chem Co Ltd 半導体ウエハのダイシング方法及び半導体装置の製造方法
JP2009260232A (ja) * 2008-03-26 2009-11-05 Hitachi Chem Co Ltd 半導体封止用フィルム状接着剤、半導体装置及びその製造方法
JP5837272B2 (ja) * 2008-05-21 2015-12-24 日立化成株式会社 半導体製造装置の製造方法
US20100007007A1 (en) * 2008-07-08 2010-01-14 Samsung Electronics Co., Ltd Semiconductor package
US8431921B2 (en) 2009-01-13 2013-04-30 Hewlett-Packard Development Company, L.P. Memristor having a triangular shaped electrode
JP5477144B2 (ja) * 2009-05-26 2014-04-23 日立化成株式会社 回路部材接続用接着剤シート及び半導体装置の製造方法
JP6073781B2 (ja) * 2010-06-01 2017-02-01 スリーエム イノベイティブ プロパティズ カンパニー 多層封止フィルム
US8852391B2 (en) 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
JP5385988B2 (ja) * 2010-08-23 2014-01-08 積水化学工業株式会社 接着シート及び半導体チップの実装方法
JP2012074623A (ja) * 2010-09-29 2012-04-12 Sekisui Chem Co Ltd 半導体加工用接着フィルム及び半導体チップ実装体の製造方法
JP5957794B2 (ja) * 2011-01-26 2016-07-27 日立化成株式会社 積層シート及び半導体装置の製造方法
JP5802400B2 (ja) * 2011-02-14 2015-10-28 日東電工株式会社 封止用樹脂シートおよびそれを用いた半導体装置、並びにその半導体装置の製法
JP5666335B2 (ja) * 2011-02-15 2015-02-12 日東電工株式会社 保護層形成用フィルム
JP5830250B2 (ja) * 2011-02-15 2015-12-09 日東電工株式会社 半導体装置の製造方法
TWI540644B (zh) 2011-07-01 2016-07-01 漢高智慧財產控股公司 斥性材料於半導體總成中保護製造區域之用途
JP2013021119A (ja) * 2011-07-11 2013-01-31 Shin Etsu Chem Co Ltd ウエハーレベルアンダーフィル剤組成物、これを用いた半導体装置及びその製造方法
JP5800640B2 (ja) * 2011-08-30 2015-10-28 日東電工株式会社 発光ダイオード装置の製造方法
JP5958262B2 (ja) * 2011-10-28 2016-07-27 信越化学工業株式会社 ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP6337417B2 (ja) * 2012-03-16 2018-06-06 住友ベークライト株式会社 接着シートおよび電子部品
JP5965185B2 (ja) 2012-03-30 2016-08-03 デクセリアルズ株式会社 回路接続材料、及びこれを用いた半導体装置の製造方法
SG11201406125PA (en) 2012-05-30 2014-11-27 Toray Industries Adhesive sheet for production of semiconductor device with bump electrode, and method for production of semiconductor device
JP5738263B2 (ja) * 2012-12-25 2015-06-17 日立化成株式会社 半導体装置の製造方法
KR102070091B1 (ko) 2013-02-20 2020-01-29 삼성전자주식회사 기판 연마 방법 및 이를 이용한 반도체 발광소자 제조방법
JP5976573B2 (ja) * 2013-03-13 2016-08-23 日東電工株式会社 補強シート及び二次実装半導体装置の製造方法
JP6358535B2 (ja) * 2013-04-26 2018-07-18 パナソニックIpマネジメント株式会社 配線板間接続構造、および配線板間接続方法
JP6129696B2 (ja) 2013-09-11 2017-05-17 デクセリアルズ株式会社 アンダーフィル材、及びこれを用いた半導体装置の製造方法
JP6069142B2 (ja) 2013-09-11 2017-02-01 デクセリアルズ株式会社 アンダーフィル材、及びこれを用いた半導体装置の製造方法
JP6069143B2 (ja) * 2013-09-11 2017-02-01 デクセリアルズ株式会社 アンダーフィル材、及びこれを用いた半導体装置の製造方法
JP6069153B2 (ja) 2013-09-27 2017-02-01 デクセリアルズ株式会社 アンダーフィル材、及びこれを用いた半導体装置の製造方法
CN105849215B (zh) * 2013-12-26 2019-09-03 日立化成株式会社 临时固定用膜、临时固定用膜片材及半导体装置
JP6328987B2 (ja) 2014-04-22 2018-05-23 デクセリアルズ株式会社 半導体装置の製造方法
JP6347657B2 (ja) * 2014-04-22 2018-06-27 デクセリアルズ株式会社 保護テープ、及びこれを用いた半導体装置の製造方法
JP2015092594A (ja) * 2014-12-10 2015-05-14 日東電工株式会社 保護層形成用フィルム
JP6438790B2 (ja) 2015-02-06 2018-12-19 デクセリアルズ株式会社 半導体装置の製造方法、及びアンダーフィルフィルム
JP6021982B2 (ja) * 2015-03-31 2016-11-09 積水化学工業株式会社 バックグラインド−アンダーフィル一体型テープ、及び、半導体チップの実装方法
JP6599134B2 (ja) * 2015-06-04 2019-10-30 デクセリアルズ株式会社 保護テープ、及びこれを用いた半導体装置の製造方法
JP6595296B2 (ja) 2015-10-19 2019-10-23 デクセリアルズ株式会社 保護テープ、及び半導体装置の製造方法
SG11201803250TA (en) 2015-11-04 2018-05-30 Lintec Corp First protective film forming sheet
TWI761317B (zh) 2015-11-04 2022-04-21 日商琳得科股份有限公司 熱固化性樹脂膜、第一保護膜形成用片以及第一保護膜的形成方法
JP6816918B2 (ja) * 2015-11-04 2021-01-20 リンテック株式会社 半導体装置の製造方法
TWI643741B (zh) 2015-11-04 2018-12-11 琳得科股份有限公司 固化性樹脂膜及第一保護膜形成用片
SG11201803247PA (en) 2015-11-04 2018-05-30 Lintec Corp Protective film forming sheet
CN108140622B (zh) 2015-11-04 2021-03-05 琳得科株式会社 热固性树脂膜和第2保护膜形成膜的套件、及其形成方法
MY185983A (en) 2015-11-04 2021-06-14 Lintec Corp Curable resin film and first protective film forming sheet
TWI641494B (zh) 2015-11-04 2018-11-21 日商琳得科股份有限公司 第一保護膜形成用片、第一保護膜形成方法以及半導體晶片的製造方法
CN108260356B (zh) 2015-11-04 2021-06-04 琳得科株式会社 固化性树脂膜及第1保护膜形成用片
KR102538766B1 (ko) 2015-11-04 2023-05-31 린텍 가부시키가이샤 경화성 수지 필름 및 제1 보호막 형성용 시트
US9837375B2 (en) * 2016-02-26 2017-12-05 Semtech Corporation Semiconductor device and method of forming insulating layers around semiconductor die
JP6132056B2 (ja) * 2016-06-17 2017-05-24 日立化成株式会社 半導体装置の製造方法
GB2551732B (en) * 2016-06-28 2020-05-27 Disco Corp Method of processing wafer
JP7065035B2 (ja) * 2016-11-08 2022-05-11 リンテック株式会社 半導体装置の製造方法
JP6975006B2 (ja) * 2016-12-26 2021-12-01 リンテック株式会社 ワークの製造方法
CN110582841B (zh) 2017-05-16 2023-08-22 迪睿合株式会社 底部填充材料、底部填充薄膜及使用其的半导体装置的制备方法
JP7095978B2 (ja) * 2017-11-16 2022-07-05 日東電工株式会社 半導体プロセスシートおよび半導体パッケージ製造方法
KR102661683B1 (ko) * 2018-08-03 2024-04-29 가부시끼가이샤 레조낙 접착제 조성물, 필름상 접착제, 접착 시트, 및 반도체 장치의 제조 방법
WO2020100696A1 (ja) 2018-11-12 2020-05-22 日立化成株式会社 半導体装置の製造方法及び半導体ウエハ加工用接着フィルム
JP7047750B2 (ja) * 2018-12-21 2022-04-05 味の素株式会社 積層配線板の製造方法
CN114450374B (zh) 2019-09-30 2024-07-19 株式会社力森诺科 半导体用黏合剂、半导体用黏合剂片及半导体装置的制造方法
JP7032477B2 (ja) * 2020-06-19 2022-03-08 日東電工株式会社 バンプ根元補強用シート
JP7521271B2 (ja) 2020-06-19 2024-07-24 株式会社レゾナック 多層フィルムの製造方法、多層フィルム及び半導体装置の製造方法
JPWO2022209875A1 (zh) 2021-03-30 2022-10-06

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1660721A (en) * 1926-07-02 1928-02-28 Martin J Schrag Orthopedic apparatus
US4099525A (en) * 1977-03-07 1978-07-11 Mccarthy Robert O Animal leg brace
US5230700A (en) * 1989-04-28 1993-07-27 Charles Humbert Orthopedic apparatus for persons handicapped in one leg
US5578041A (en) * 1994-10-14 1996-11-26 Trustees Of The University Of Pennsylvania External fixation device
US5726391A (en) * 1996-12-16 1998-03-10 Shell Oil Company Thermosetting Encapsulants for electronics packaging
JP4598905B2 (ja) 1999-01-29 2010-12-15 フリースケール セミコンダクター インコーポレイテッド 半導体素子の製造方法
US6350664B1 (en) * 1999-09-02 2002-02-26 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
JP2001144123A (ja) 1999-09-02 2001-05-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
JP2001144120A (ja) 1999-11-10 2001-05-25 Sumitomo Bakelite Co Ltd 半導体装置およびその製造方法
JP4180206B2 (ja) 1999-11-12 2008-11-12 リンテック株式会社 半導体装置の製造方法
JP4369584B2 (ja) 2000-01-21 2009-11-25 日東電工株式会社 半導体ウエハ保持保護用粘着シート
JP4438973B2 (ja) * 2000-05-23 2010-03-24 アムコア テクノロジー,インコーポレイテッド シート状樹脂組成物及びそれを用いた半導体装置の製造方法
JP2002327165A (ja) 2001-04-20 2002-11-15 Three M Innovative Properties Co 熱硬化性の接着剤フィルム及びそれを用いた接着構造
US6794751B2 (en) * 2001-06-29 2004-09-21 Intel Corporation Multi-purpose planarizing/back-grind/pre-underfill arrangements for bumped wafers and dies
US20030111519A1 (en) 2001-09-04 2003-06-19 3M Innovative Properties Company Fluxing compositions
JP4251807B2 (ja) * 2001-12-17 2009-04-08 株式会社巴川製紙所 半導体装置製造用接着シート
JP3717899B2 (ja) * 2002-04-01 2005-11-16 Necエレクトロニクス株式会社 半導体装置及びその製造方法

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