WO2009014087A1 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- WO2009014087A1 WO2009014087A1 PCT/JP2008/063020 JP2008063020W WO2009014087A1 WO 2009014087 A1 WO2009014087 A1 WO 2009014087A1 JP 2008063020 W JP2008063020 W JP 2008063020W WO 2009014087 A1 WO2009014087 A1 WO 2009014087A1
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- WO
- WIPO (PCT)
- Prior art keywords
- chip
- wafer
- adhesive film
- bonding
- bonded
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002313 adhesive film Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000005192 partition Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
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Abstract
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KR1020107000403A KR101133892B1 (ko) | 2007-07-23 | 2008-07-18 | 반도체 장치의 제조방법 |
US12/670,127 US8003441B2 (en) | 2007-07-23 | 2008-07-18 | Manufacturing method of semiconductor device |
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JP2007-190372 | 2007-07-23 | ||
JP2007190372A JP5032231B2 (ja) | 2007-07-23 | 2007-07-23 | 半導体装置の製造方法 |
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JP (1) | JP5032231B2 (ja) |
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Cited By (3)
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JP2014529182A (ja) * | 2011-07-29 | 2014-10-30 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | コーティング後グラインディング前のダイシング |
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US11081392B2 (en) * | 2018-09-28 | 2021-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dicing method for stacked semiconductor devices |
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US11756783B1 (en) * | 2020-08-19 | 2023-09-12 | Hrl Laboratories, Llc | Method for creating cavities in silicon carbide and other semiconductor substrates |
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JP2022177554A (ja) * | 2021-05-18 | 2022-12-01 | Tdk株式会社 | 基板処理装置および基板処理方法 |
JP2022177553A (ja) * | 2021-05-18 | 2022-12-01 | Tdk株式会社 | 基板処理装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004311709A (ja) * | 2003-04-07 | 2004-11-04 | Renesas Technology Corp | 半導体装置の製造方法および半導体製造装置 |
JP2006261529A (ja) * | 2005-03-18 | 2006-09-28 | Lintec Corp | フリップチップ実装用アンダーフィルテープおよび半導体装置の製造方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2684801B1 (fr) * | 1991-12-06 | 1997-01-24 | Picogiga Sa | Procede de realisation de composants semiconducteurs, notamment sur gaas ou inp, avec recuperation du substrat par voie chimique. |
JPH05335411A (ja) | 1992-06-02 | 1993-12-17 | Toshiba Corp | ペレットの製造方法 |
JPH06302945A (ja) * | 1993-04-12 | 1994-10-28 | Seiko Epson Corp | 素子実装方法および装置 |
WO1994024704A1 (en) * | 1993-04-12 | 1994-10-27 | Bolger Justin C | Area bonding conductive adhesive preforms |
JPH0913741A (ja) | 1995-06-29 | 1997-01-14 | Yoshiharu Higashiya | 道路、駐車場又はベランダ用融雪装置と屋根用融雪装置 |
US5861661A (en) * | 1995-12-27 | 1999-01-19 | Industrial Technology Research Institute | Composite bump tape automated bonded structure |
JP3604248B2 (ja) | 1997-02-25 | 2004-12-22 | 沖電気工業株式会社 | 半導体装置の製造方法 |
JPH10270497A (ja) | 1997-03-27 | 1998-10-09 | Sumitomo Bakelite Co Ltd | 半導体素子固定方法 |
US6294439B1 (en) * | 1997-07-23 | 2001-09-25 | Kabushiki Kaisha Toshiba | Method of dividing a wafer and method of manufacturing a semiconductor device |
JPH1140520A (ja) * | 1997-07-23 | 1999-02-12 | Toshiba Corp | ウェーハの分割方法及び半導体装置の製造方法 |
JP3410371B2 (ja) * | 1998-08-18 | 2003-05-26 | リンテック株式会社 | ウエハ裏面研削時の表面保護シートおよびその利用方法 |
JP2000114204A (ja) * | 1998-10-01 | 2000-04-21 | Mitsubishi Electric Corp | ウエハシート及びこれを用いた半導体装置の製造方法並びに半導体製造装置 |
DE19962763C2 (de) * | 1999-07-01 | 2001-07-26 | Fraunhofer Ges Forschung | Verfahren zum Vereinzeln eines Wafers |
JP2001035817A (ja) * | 1999-07-22 | 2001-02-09 | Toshiba Corp | ウェーハの分割方法及び半導体装置の製造方法 |
JP2001298052A (ja) * | 2000-02-09 | 2001-10-26 | Interuniv Micro Electronica Centrum Vzw | 接着剤を用いた半導体素子のフリップチップアセンブリ方法 |
JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
JP2002118147A (ja) | 2000-10-11 | 2002-04-19 | Mitsui Chemicals Inc | 半導体チップをプリント配線基板に装着する方法及びその方法の実施に用いる装着用シート |
US6982184B2 (en) * | 2001-05-02 | 2006-01-03 | Silverbrook Research Pty Ltd | Method of fabricating MEMS devices on a silicon wafer |
JP4330821B2 (ja) * | 2001-07-04 | 2009-09-16 | 株式会社東芝 | 半導体装置の製造方法 |
JP4266106B2 (ja) * | 2001-09-27 | 2009-05-20 | 株式会社東芝 | 粘着性テープの剥離装置、粘着性テープの剥離方法、半導体チップのピックアップ装置、半導体チップのピックアップ方法及び半導体装置の製造方法 |
US6838316B2 (en) * | 2002-03-06 | 2005-01-04 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method using ultrasonic flip chip bonding technique |
US6908784B1 (en) * | 2002-03-06 | 2005-06-21 | Micron Technology, Inc. | Method for fabricating encapsulated semiconductor components |
JP2003264205A (ja) * | 2002-03-08 | 2003-09-19 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2004031975A (ja) * | 2003-07-22 | 2004-01-29 | Hitachi Chem Co Ltd | 接続装置 |
JP4397837B2 (ja) * | 2005-03-02 | 2010-01-13 | 日東電工株式会社 | 半導体装置の製造方法 |
US20090075429A1 (en) * | 2005-04-27 | 2009-03-19 | Lintec Corporation | Sheet-Like Underfill Material and Semiconductor Device Manufacturing Method |
JP2007027562A (ja) * | 2005-07-20 | 2007-02-01 | Disco Abrasive Syst Ltd | ウエーハに装着された接着フィルムの破断方法 |
JP2007053268A (ja) * | 2005-08-19 | 2007-03-01 | Toyota Motor Corp | 接合構造体の製造方法、ハンダ接合方法及びハンダ接合装置 |
US7273768B2 (en) * | 2005-08-30 | 2007-09-25 | Mutual-Pak Technology Co. Ltd. | Wafer-level package and IC module assembly method for the wafer-level package |
JP5159273B2 (ja) * | 2007-11-28 | 2013-03-06 | ルネサスエレクトロニクス株式会社 | 電子装置の製造方法 |
-
2007
- 2007-07-23 JP JP2007190372A patent/JP5032231B2/ja active Active
-
2008
- 2008-07-18 WO PCT/JP2008/063020 patent/WO2009014087A1/ja active Application Filing
- 2008-07-18 KR KR1020107000403A patent/KR101133892B1/ko active IP Right Grant
- 2008-07-18 US US12/670,127 patent/US8003441B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004311709A (ja) * | 2003-04-07 | 2004-11-04 | Renesas Technology Corp | 半導体装置の製造方法および半導体製造装置 |
JP2006261529A (ja) * | 2005-03-18 | 2006-09-28 | Lintec Corp | フリップチップ実装用アンダーフィルテープおよび半導体装置の製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011152492A1 (ja) * | 2010-06-02 | 2011-12-08 | ソニーケミカル&インフォメーションデバイス株式会社 | ウエハのダイシング方法、接続方法及び接続構造体 |
CN103081068A (zh) * | 2010-09-06 | 2013-05-01 | 日东电工株式会社 | 半导体装置用薄膜以及半导体装置 |
JP2014529182A (ja) * | 2011-07-29 | 2014-10-30 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | コーティング後グラインディング前のダイシング |
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JP5032231B2 (ja) | 2012-09-26 |
US20100190293A1 (en) | 2010-07-29 |
KR20100035160A (ko) | 2010-04-02 |
KR101133892B1 (ko) | 2012-04-09 |
US8003441B2 (en) | 2011-08-23 |
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