JP2009027054A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2009027054A JP2009027054A JP2007190372A JP2007190372A JP2009027054A JP 2009027054 A JP2009027054 A JP 2009027054A JP 2007190372 A JP2007190372 A JP 2007190372A JP 2007190372 A JP2007190372 A JP 2007190372A JP 2009027054 A JP2009027054 A JP 2009027054A
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- adhesive film
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Abstract
【解決手段】回路表面に接着フィルム3が接着され、かつ該回路毎に区画する溝6が形成されてなるウエハ1の回路表面側に表面保護シートを貼着する工程、上記ウエハの裏面研削をすることで個々のチップへの分割を行う工程、個別のチップを接着フィルムとともにピックアップし接着フィルムを介して、チップ搭載用基板にダイボンドする工程、およびダイボンドされた接着フィルム付きチップを加熱しチップ搭載用基板に固着する工程を含み、かつ接着フィルムをウエハに接着した後、チップをチップ搭載用基板に固着するまでの段階で、接着フィルムを含む積層体を、常圧に対し0.05MPa以上の静圧により加圧する工程を1回以上含む。
【選択図】図2
Description
上記ウエハの裏面研削をすることでウエハの厚みを薄くするとともに、最終的には個々のチップへの分割を行う工程、
個別のチップを接着フィルムとともにピックアップする工程、
個別のチップを該接着フィルムを介して、チップ搭載用基板の所定位置にダイボンドする工程、および
ダイボンドされた接着フィルム付きチップを加熱し、チップをチップ搭載用基板に固着する工程を含み、かつ
接着フィルムをウエハに接着した後、チップをチップ搭載用基板に固着するまでの何れかの段階で、接着フィルムを含む積層体を、常圧に対し0.05MPa以上の静圧により加圧する工程を1回以上含む半導体装置の製造方法。
(2)ダイボンド後に、静圧加圧を行う(1)に記載の半導体装置の製造方法。
(3)静圧加圧を行いつつ、チップをチップ搭載用基板に固着する(1)に記載の半導体装置の製造方法。
(S2)上記ウエハ1の裏面研削をすることでウエハ1の厚みを薄くするとともに、最終的には個々のチップへ10の分割を行う工程(図8、図9参照)、
(S3)個別のチップ10を接着フィルム3とともにピックアップする工程(図示せず)、
(S4)個別のチップ10を該接着フィルム3を介して、チップ搭載用基板11の所定位置にダイボンドする工程(図12参照)、
(S5)ダイボンドされた接着フィルム付きチップ10を加熱し、チップ10をチップ搭載用基板11に固着する工程(図示せず)、および
(IP)上記(S1)工程から(S5)工程に至る何れかの段階で、接着フィルム3を含む積層体を、常圧に対し0.05MPa以上の静圧により加圧する工程。
(S1)工程では、ウエハ1の回路表面に、接着フィルム3が接着され、かつ該回路毎に区画する溝6が形成されてなるウエハ1の回路表面側に表面保護シート7を貼着する(図6、図7参照)。
常温で感圧接着性を有するバインダー樹脂としては、たとえばアクリル樹脂、ポリエステル樹脂、ポリビニルエーテル、ウレタン樹脂、ポリアミド等が挙げられる。熱硬化性樹脂としては、たとえば、エポキシ樹脂、アクリル樹脂、ポリイミド樹脂、フェノール樹脂、尿素樹脂、メラミン樹脂、レゾルシノール樹脂等が用いられ、好ましくはエポキシ樹脂が挙げられる。また粘接着剤には、後述する表面保護シート7との剥離性を制御するため、ウレタン系アクリレートオリゴマーなどのエネルギー線(紫外線等)硬化性樹脂を配合することが好ましい。エネルギー線硬化性樹脂を配合すると、エネルギー線照射前は表面保護シート7が粘接着剤層とよく密着し、エネルギー線照射後は剥離しやすくなる。
(S2)工程では、上記ウエハ1の裏面研削をすることでウエハ1の厚みを薄くするとともに、最終的には個々のチップ10への分割を行う(図8,図9参照)。
(S3)工程では、個別のチップ10を接着フィルム3とともにピックアップする(図示せず)。接着フィルム付チップのピックアップは、表面保護シート7から直接行ってもよく、また接着フィルム付チップを表面保護シート7から他の粘着シートに転写した後に、該他の粘着シートから接着フィルム付チップをピックアップしてもよい。このような他の粘着シートとしては、適度な感圧接着性と再剥離性を有する粘着シートが好ましく、特に従来よりダイシングシートとして使用されている紫外線硬化型粘着シートが好ましく用いられる。
(S4)工程では、個別のチップ10を該接着フィルム3を介して、チップ搭載用基板11の電極部12等の所定位置に載置する(図12参照)。
(S5)工程では、ダイボンドされた接着フィルム付きチップ10を加熱し、チップをチップ搭載用基板11に固着する(図示せず)。
本発明の半導体装置の製造方法は、上記(S1)工程後、(S5)工程までの何れかの段階で、接着フィルム3を含む積層体を、常圧に対し0.05MPa以上の静圧により加圧する工程(IP)(図示せず)を1回以上含む。
次に、本発明を実施例により、さらに詳細に説明するが、本発明は、これらの例によってなんら限定されるものではない。
接着フィルムの製造には、下記アクリル系共重合体(A)、熱硬化型接着成分(B)、熱活性型潜在性硬化剤(C)、エネルギー線重合性化合物(D)、光重合開始剤(E)および架橋剤(F)を用いた。
(B)熱硬化型接着成分(エポキシ樹脂):ビスフェノールA型エポキシ樹脂(ジャパンエポキシレジン(株)社製、エピコート828、エポキシ当量180〜200eq/g)22重量部と、固形ビスフェノールA型エポキシ樹脂(ジャパンエポキシレジン(株)製、エピコート1055、エポキシ当量800〜900eq/g)を有機溶媒(メチルエチルケトン)に溶解した溶液(固形濃度が60%)の固形分量で44重量部相当と、o-クレゾールノボラック型エポキシ樹脂(日本化薬(株)社製、EOCN-104S、エポキシ当量210〜230g/eq)を有機溶媒(メチルエチルケトン)に溶解した溶液(固形濃度が70%)の固形分量で14重量部相当との混合物
(C)熱活性型潜在性硬化剤:ジシアンジアミド(旭電化工業(株)製、ハードナー3636AS)1重量部と2-フェニル-4,5-ヒドロキシメチルイミダゾール(四国化成工業(株)製、キュアゾール2PHZ)1重量部の混合物を、有機溶媒(メチルエチルケトン)に溶解した溶液(固形濃度が30%)
(D)エネルギー線硬化性樹脂:ジペンタエリスリトールヘキサアクリレート
(E)ベンゾフェノン系光重合開始剤:イルガキュア184(チバスペシャリティケミカルズ社製)を有機溶媒(トルエン)に溶解した溶液(固形濃度が30%)
(F)イソシナネート系架橋剤:コロネートL(日本ポリウレタン工業(株)製)を有機溶媒(トルエン)に溶解した溶液(固形濃度が38%)
上記成分を固形重量比で、(A)20重量部、(B)80重量部、(C)2重量部、(D)10重量部、(E)0.3重量部、(F)0.3重量部を混合し、全体の固形濃度が55%になるようにメチルエチルケトンを混合して粘接着剤組成物を得た。剥離フィルム(リンテック(株)製、SP-PET3811、厚さ38μm)の剥離処理面にこの粘接着剤組成物を、乾燥後の塗布厚が50μmになるように塗布し、100℃で1分間乾燥した。次に支持フィルムとなる低密度ポリエチレンフィルム(厚さ110μm)に貼合し、接着フィルムを得た。
バンプボンダー((株)新川製、SBB4)を用いてシリコンウエハ(8インチ、厚さ725μm)の所定位置に金ボールハンダを形成し、これを溶融引き延ばし切断した。これにより高さ45μmのスタッドバンプを形成したウエハを用意した。
貼付装置(リンテック(株)製、RAD3510m/12)を用いて、貼付速度3mm/秒、荷重3MPa、ゴム製ラミネートローラー(ゴム硬度50)でウエハのバンプ面に、剥離フィルムを剥がした支持フィルム付きの接着フィルムを貼付した。なお、ラミネートローラー温度およびテーブル温度は、25℃で行った。
次いで、グラインダー(ディスコ社製、DGP-8760)を用いて回路面とは反対側を、仕上げ厚が100μmとなるように研削し、これによってウエハを接着フィルムごと分割した((S2)工程)。
実施例1と同様にして、ウエハのバンプ面に、接着フィルムを貼付し、静圧加圧工程を行わず、さらに接着フィルムのエネルギー線硬化性樹脂を硬化させた。
実施例2と同様にして、接着フィルム付のチップを得て、これを同様にピックアップし、接着フィルムを介してチップをダイボンドした((S1)〜(S4)および(FC)工程)。
実施例2と同様にしてウエハを接着フィルムごと分割した((S1)、(S2)および(FC)工程)。
実施例4において、ダイボンド後に、ダイボンドされたチップ搭載用基板(接着フィルムを含む積層体)を加熱加圧装置に投入し、常圧よりも0.5MPa大きい静圧下で、50℃、30分加熱し、ボイドの除去を行った((IP)工程)。静圧加圧前に比べて、静圧加圧を行うことで、ボイドの消滅が確認された。また、本実施例のように静圧加圧工程をダイボンド前後の2回行うことにより、静圧加圧工程1回のもの(実施例2および実施例4)と比べ、よりボイドが消滅することが確認された。
ダイサーを用いて、ウエハの回路面から130μmの深さまで切削を行い、ウエハの回路に沿った溝を形成した。
実施例6と同様にして、溝が形成されたウエハのバンプ面に、接着フィルムを貼付した。続いて、接着フィルムにレーザー光を照射し、前記ウエハ表面の溝に対応する部分を焼き切り、接着フィルムを完全に切断した((FC)工程)。
実施例6と同様にして、溝が形成されたウエハのバンプ面に、接着フィルムを貼付した。続いて、支持フィルムを剥離した後、接着フィルムにレーザー光を照射し、前記ウエハ表面の溝に対応する部分を焼き切り、接着フィルムを完全に切断した((FC)工程)。
実施例6と同様にして、溝が形成されたウエハのバンプ面に、接着フィルムを貼付し、接着フィルムを含む積層体の静圧加圧を行った((IP)工程)。静圧加圧前に比べて、静圧加圧を行うことで、ボイドの消滅が確認された。
実施例6と同様にして、溝が形成されたウエハのバンプ面に、接着フィルムを貼付した。
実施例6と同様にして、溝が形成されたウエハのバンプ面に、接着フィルムを貼付した。
実施例6と同様にして、溝が形成されたウエハのバンプ面に、接着フィルムを貼付し、接着フィルムを含む積層体の静圧加圧を行った((IP)工程)。静圧加圧前に比べて、静圧加圧を行うことで、ボイドの消滅が確認された。
実施例6と同様にして、溝が形成されたウエハのバンプ面に、接着フィルムを貼付した。
実施例6と同様にして、溝が形成されたウエハのバンプ面に、接着フィルムを貼付した。
接着フィルムを含む積層体の静圧加圧工程を行わない以外は、実施例1と同様にして模擬的な半導体装置を得た。静圧加圧を行わないため、ボイドの消滅は観察されず、また得られた半導体装置の導通および絶縁はともに不良であった。
2…導通用突起物(バンプ)
3…接着フィルム
4…支持フィルム
6…溝
7…表面保護シート
10…チップ
11…チップ搭載用基板
Claims (3)
- ウエハの回路表面に、接着フィルムが接着され、かつ該回路毎に区画する溝が形成されてなるウエハの回路表面側に表面保護シートを貼着する工程、
上記ウエハの裏面研削をすることでウエハの厚みを薄くするとともに、最終的には個々のチップへの分割を行う工程、
個別のチップを接着フィルムとともにピックアップする工程、
個別のチップを該接着フィルムを介して、チップ搭載用基板の所定位置にダイボンドする工程、および
ダイボンドされた接着フィルム付きチップを加熱し、チップをチップ搭載用基板に固着する工程を含み、かつ
接着フィルムをウエハに接着した後、チップをチップ搭載用基板に固着するまでの何れかの段階で、接着フィルムを含む積層体を、常圧に対し0.05MPa以上の静圧により加圧する工程を1回以上含む半導体装置の製造方法。 - ダイボンド後に、静圧加圧を行う請求項1に記載の半導体装置の製造方法。
- 静圧加圧を行いつつ、チップをチップ搭載用基板に固着する請求項1に記載の半導体装置の製造方法。
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KR101133892B1 (ko) | 2012-04-09 |
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US8003441B2 (en) | 2011-08-23 |
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